JP2010161318A5 - - Google Patents

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Publication number
JP2010161318A5
JP2010161318A5 JP2009004041A JP2009004041A JP2010161318A5 JP 2010161318 A5 JP2010161318 A5 JP 2010161318A5 JP 2009004041 A JP2009004041 A JP 2009004041A JP 2009004041 A JP2009004041 A JP 2009004041A JP 2010161318 A5 JP2010161318 A5 JP 2010161318A5
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JP
Japan
Prior art keywords
ultraviolet light
extreme ultraviolet
laser
generation chamber
target material
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JP2009004041A
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English (en)
Japanese (ja)
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JP5312959B2 (ja
JP2010161318A (ja
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Priority to JP2009004041A priority Critical patent/JP5312959B2/ja
Priority claimed from JP2009004041A external-priority patent/JP5312959B2/ja
Priority to US12/385,835 priority patent/US7923705B2/en
Publication of JP2010161318A publication Critical patent/JP2010161318A/ja
Publication of JP2010161318A5 publication Critical patent/JP2010161318A5/ja
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Publication of JP5312959B2 publication Critical patent/JP5312959B2/ja
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JP2009004041A 2009-01-09 2009-01-09 極端紫外光源装置 Expired - Fee Related JP5312959B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009004041A JP5312959B2 (ja) 2009-01-09 2009-01-09 極端紫外光源装置
US12/385,835 US7923705B2 (en) 2009-01-09 2009-04-21 Extreme ultra violet light source apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009004041A JP5312959B2 (ja) 2009-01-09 2009-01-09 極端紫外光源装置

Publications (3)

Publication Number Publication Date
JP2010161318A JP2010161318A (ja) 2010-07-22
JP2010161318A5 true JP2010161318A5 (enExample) 2012-02-09
JP5312959B2 JP5312959B2 (ja) 2013-10-09

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JP2009004041A Expired - Fee Related JP5312959B2 (ja) 2009-01-09 2009-01-09 極端紫外光源装置

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US (1) US7923705B2 (enExample)
JP (1) JP5312959B2 (enExample)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5314433B2 (ja) * 2009-01-06 2013-10-16 ギガフォトン株式会社 極端紫外光源装置
JP2012119098A (ja) * 2010-11-29 2012-06-21 Gigaphoton Inc 光学装置、レーザ装置および極端紫外光生成装置
JP2012178534A (ja) * 2011-02-02 2012-09-13 Gigaphoton Inc 光学システムおよびそれを用いた極端紫外光生成システム
JP2012199512A (ja) 2011-03-10 2012-10-18 Gigaphoton Inc 極端紫外光生成装置及び極端紫外光生成方法
US8368041B2 (en) * 2011-03-31 2013-02-05 Cymer, Inc. System and method for compensating for thermal effects in an EUV light source
JP5856898B2 (ja) * 2011-06-02 2016-02-10 ギガフォトン株式会社 極端紫外光生成装置および極端紫外光生成方法
US9516730B2 (en) * 2011-06-08 2016-12-06 Asml Netherlands B.V. Systems and methods for buffer gas flow stabilization in a laser produced plasma light source
US9148941B2 (en) 2013-01-22 2015-09-29 Asml Netherlands B.V. Thermal monitor for an extreme ultraviolet light source
US8872143B2 (en) 2013-03-14 2014-10-28 Asml Netherlands B.V. Target for laser produced plasma extreme ultraviolet light source
US8791440B1 (en) 2013-03-14 2014-07-29 Asml Netherlands B.V. Target for extreme ultraviolet light source
JP5956949B2 (ja) * 2013-03-22 2016-07-27 株式会社日立エルジーデータストレージ 画像表示装置
JP2015022096A (ja) * 2013-07-18 2015-02-02 株式会社日立エルジーデータストレージ 画像表示装置
KR101872752B1 (ko) * 2013-12-13 2018-06-29 에이에스엠엘 네델란즈 비.브이. 방사선 소스, 계측 장치, 리소그래피 시스템 및 디바이스 제조 방법
US9338870B2 (en) 2013-12-30 2016-05-10 Asml Netherlands B.V. Extreme ultraviolet light source
US9232623B2 (en) 2014-01-22 2016-01-05 Asml Netherlands B.V. Extreme ultraviolet light source
EP3142823B1 (de) * 2014-05-13 2020-07-29 Trumpf Laser- und Systemtechnik GmbH Einrichtung zur überwachung der ausrichtung eines laserstrahls und euv-strahlungserzeugungsvorrichtung damit
US9357625B2 (en) 2014-07-07 2016-05-31 Asml Netherlands B.V. Extreme ultraviolet light source
TWI700965B (zh) * 2015-06-22 2020-08-01 美商克萊譚克公司 高效率雷射支持之電漿光源
US10887974B2 (en) 2015-06-22 2021-01-05 Kla Corporation High efficiency laser-sustained plasma light source
KR101736055B1 (ko) * 2015-07-24 2017-05-29 한국기초과학지원연구원 초고분해능 현미경 광원용 파장가변 uv 레이저 발진 장치 및 그 방법
KR102452722B1 (ko) 2015-08-27 2022-10-06 삼성전자주식회사 기판 처리 장치
US20170311429A1 (en) 2016-04-25 2017-10-26 Asml Netherlands B.V. Reducing the effect of plasma on an object in an extreme ultraviolet light source
WO2017216847A1 (ja) * 2016-06-13 2017-12-21 ギガフォトン株式会社 チャンバ装置及び極端紫外光生成装置
US10345714B2 (en) * 2016-07-12 2019-07-09 Cymer, Llc Lithography optics adjustment and monitoring
JP6828438B2 (ja) * 2017-01-06 2021-02-10 セイコーエプソン株式会社 熱輸送装置及びプロジェクター
US10128017B1 (en) * 2017-05-12 2018-11-13 Asml Netherlands B.V. Apparatus for and method of controlling debris in an EUV light source
US10824083B2 (en) * 2017-09-28 2020-11-03 Taiwan Semiconductor Manufacturing Co., Ltd. Light source, EUV lithography system, and method for generating EUV radiation
WO2019150441A1 (ja) 2018-01-30 2019-08-08 ギガフォトン株式会社 極端紫外光生成装置及び電子デバイスの製造方法
CN111999989B (zh) * 2020-09-01 2023-07-14 广东省智能机器人研究院 激光等离子体极紫外光源和极紫外光产生方法
CN112485974A (zh) * 2020-12-08 2021-03-12 郑州大学 一种可见光修正步进紫外光曝光焦距的校正装置及方法
US12520385B2 (en) * 2022-03-22 2026-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor processing tool and methods of operation
KR102673037B1 (ko) * 2022-05-10 2024-06-07 주식회사 이솔 Ｅｕｖ 광원 생성장치

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05217844A (ja) * 1992-01-30 1993-08-27 Matsushita Electric Ind Co Ltd 投影露光装置
JP4029200B2 (ja) * 1997-12-08 2008-01-09 株式会社ニコン 投影露光装置、投影露光方法、光洗浄方法および半導体デバイスの製造方法
FR2814599B1 (fr) * 2000-09-27 2005-05-20 Commissariat Energie Atomique Dispositif laser de forte puissance crete et application a la generation de lumiere dans l'extreme ultra violet
JP4320999B2 (ja) 2002-02-04 2009-08-26 株式会社ニコン Ｘ線発生装置及び露光装置
JP2004111454A (ja) * 2002-09-13 2004-04-08 Canon Inc Ｅｕｖ光源における消耗品管理方法
US7109503B1 (en) * 2005-02-25 2006-09-19 Cymer, Inc. Systems for protecting internal components of an EUV light source from plasma-generated debris
JP2006245255A (ja) * 2005-03-03 2006-09-14 Nikon Corp 露光装置、露光方法、および微細パターンを有するデバイスの製造方法
JP2007013054A (ja) * 2005-07-04 2007-01-18 Nikon Corp 投影露光装置及びマイクロデバイスの製造方法
JP5076078B2 (ja) * 2006-10-06 2012-11-21 ギガフォトン株式会社 極端紫外光源装置
JP4842088B2 (ja) * 2006-10-24 2011-12-21 株式会社小松製作所 極端紫外光源装置及びコレクタミラー装置
JP5314433B2 (ja) * 2009-01-06 2013-10-16 ギガフォトン株式会社 極端紫外光源装置
JP5455661B2 (ja) * 2009-01-29 2014-03-26 ギガフォトン株式会社 極端紫外光源装置

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