JP5312959B2 - 極端紫外光源装置 - Google Patents

極端紫外光源装置 Download PDF

Info

Publication number
JP5312959B2
JP5312959B2 JP2009004041A JP2009004041A JP5312959B2 JP 5312959 B2 JP5312959 B2 JP 5312959B2 JP 2009004041 A JP2009004041 A JP 2009004041A JP 2009004041 A JP2009004041 A JP 2009004041A JP 5312959 B2 JP5312959 B2 JP 5312959B2
Authority
JP
Japan
Prior art keywords
extreme ultraviolet
ultraviolet light
laser
target material
window
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009004041A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010161318A5 (enExample
JP2010161318A (ja
Inventor
理 若林
正人 守屋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gigaphoton Inc
Original Assignee
Gigaphoton Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gigaphoton Inc filed Critical Gigaphoton Inc
Priority to JP2009004041A priority Critical patent/JP5312959B2/ja
Priority to US12/385,835 priority patent/US7923705B2/en
Publication of JP2010161318A publication Critical patent/JP2010161318A/ja
Publication of JP2010161318A5 publication Critical patent/JP2010161318A5/ja
Application granted granted Critical
Publication of JP5312959B2 publication Critical patent/JP5312959B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70033—Production of exposure light, i.e. light sources by plasma extreme ultraviolet [EUV] sources
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05G—X-RAY TECHNIQUE
    • H05G2/00—Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001—Production of X-ray radiation generated from plasma
    • H05G2/008—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation
    • H05G2/0082—Production of X-ray radiation generated from plasma involving an energy-carrying beam in the process of plasma generation the energy-carrying beam being a laser beam
    • H05G2/0086—Optical arrangements for conveying the laser beam to the plasma generation location

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Environmental & Geological Engineering (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Plasma & Fusion (AREA)
  • Toxicology (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • X-Ray Techniques (AREA)
JP2009004041A 2009-01-09 2009-01-09 極端紫外光源装置 Expired - Fee Related JP5312959B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009004041A JP5312959B2 (ja) 2009-01-09 2009-01-09 極端紫外光源装置
US12/385,835 US7923705B2 (en) 2009-01-09 2009-04-21 Extreme ultra violet light source apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009004041A JP5312959B2 (ja) 2009-01-09 2009-01-09 極端紫外光源装置

Publications (3)

Publication Number Publication Date
JP2010161318A JP2010161318A (ja) 2010-07-22
JP2010161318A5 JP2010161318A5 (enExample) 2012-02-09
JP5312959B2 true JP5312959B2 (ja) 2013-10-09

Family

ID=42318383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009004041A Expired - Fee Related JP5312959B2 (ja) 2009-01-09 2009-01-09 極端紫外光源装置

Country Status (2)

Country Link
US (1) US7923705B2 (enExample)
JP (1) JP5312959B2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10062550B2 (en) 2015-08-27 2018-08-28 Samsung Electronics Co., Ltd. Substrate processing apparatus

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5314433B2 (ja) * 2009-01-06 2013-10-16 ギガフォトン株式会社 極端紫外光源装置
JP2012119098A (ja) * 2010-11-29 2012-06-21 Gigaphoton Inc 光学装置、レーザ装置および極端紫外光生成装置
JP2012178534A (ja) * 2011-02-02 2012-09-13 Gigaphoton Inc 光学システムおよびそれを用いた極端紫外光生成システム
JP2012199512A (ja) 2011-03-10 2012-10-18 Gigaphoton Inc 極端紫外光生成装置及び極端紫外光生成方法
US8368041B2 (en) * 2011-03-31 2013-02-05 Cymer, Inc. System and method for compensating for thermal effects in an EUV light source
JP5856898B2 (ja) * 2011-06-02 2016-02-10 ギガフォトン株式会社 極端紫外光生成装置および極端紫外光生成方法
US9516730B2 (en) * 2011-06-08 2016-12-06 Asml Netherlands B.V. Systems and methods for buffer gas flow stabilization in a laser produced plasma light source
US9148941B2 (en) 2013-01-22 2015-09-29 Asml Netherlands B.V. Thermal monitor for an extreme ultraviolet light source
US8872143B2 (en) 2013-03-14 2014-10-28 Asml Netherlands B.V. Target for laser produced plasma extreme ultraviolet light source
US8791440B1 (en) 2013-03-14 2014-07-29 Asml Netherlands B.V. Target for extreme ultraviolet light source
JP5956949B2 (ja) * 2013-03-22 2016-07-27 株式会社日立エルジーデータストレージ 画像表示装置
JP2015022096A (ja) * 2013-07-18 2015-02-02 株式会社日立エルジーデータストレージ 画像表示装置
KR101872752B1 (ko) * 2013-12-13 2018-06-29 에이에스엠엘 네델란즈 비.브이. 방사선 소스, 계측 장치, 리소그래피 시스템 및 디바이스 제조 방법
US9338870B2 (en) 2013-12-30 2016-05-10 Asml Netherlands B.V. Extreme ultraviolet light source
US9232623B2 (en) 2014-01-22 2016-01-05 Asml Netherlands B.V. Extreme ultraviolet light source
EP3142823B1 (de) * 2014-05-13 2020-07-29 Trumpf Laser- und Systemtechnik GmbH Einrichtung zur überwachung der ausrichtung eines laserstrahls und euv-strahlungserzeugungsvorrichtung damit
US9357625B2 (en) 2014-07-07 2016-05-31 Asml Netherlands B.V. Extreme ultraviolet light source
TWI700965B (zh) * 2015-06-22 2020-08-01 美商克萊譚克公司 高效率雷射支持之電漿光源
US10887974B2 (en) 2015-06-22 2021-01-05 Kla Corporation High efficiency laser-sustained plasma light source
KR101736055B1 (ko) * 2015-07-24 2017-05-29 한국기초과학지원연구원 초고분해능 현미경 광원용 파장가변 uv 레이저 발진 장치 및 그 방법
US20170311429A1 (en) 2016-04-25 2017-10-26 Asml Netherlands B.V. Reducing the effect of plasma on an object in an extreme ultraviolet light source
WO2017216847A1 (ja) * 2016-06-13 2017-12-21 ギガフォトン株式会社 チャンバ装置及び極端紫外光生成装置
US10345714B2 (en) * 2016-07-12 2019-07-09 Cymer, Llc Lithography optics adjustment and monitoring
JP6828438B2 (ja) * 2017-01-06 2021-02-10 セイコーエプソン株式会社 熱輸送装置及びプロジェクター
US10128017B1 (en) * 2017-05-12 2018-11-13 Asml Netherlands B.V. Apparatus for and method of controlling debris in an EUV light source
US10824083B2 (en) * 2017-09-28 2020-11-03 Taiwan Semiconductor Manufacturing Co., Ltd. Light source, EUV lithography system, and method for generating EUV radiation
WO2019150441A1 (ja) 2018-01-30 2019-08-08 ギガフォトン株式会社 極端紫外光生成装置及び電子デバイスの製造方法
CN111999989B (zh) * 2020-09-01 2023-07-14 广东省智能机器人研究院 激光等离子体极紫外光源和极紫外光产生方法
CN112485974A (zh) * 2020-12-08 2021-03-12 郑州大学 一种可见光修正步进紫外光曝光焦距的校正装置及方法
US12520385B2 (en) * 2022-03-22 2026-01-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor processing tool and methods of operation
KR102673037B1 (ko) * 2022-05-10 2024-06-07 주식회사 이솔 Ｅｕｖ 광원 생성장치

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05217844A (ja) * 1992-01-30 1993-08-27 Matsushita Electric Ind Co Ltd 投影露光装置
JP4029200B2 (ja) * 1997-12-08 2008-01-09 株式会社ニコン 投影露光装置、投影露光方法、光洗浄方法および半導体デバイスの製造方法
FR2814599B1 (fr) * 2000-09-27 2005-05-20 Commissariat Energie Atomique Dispositif laser de forte puissance crete et application a la generation de lumiere dans l'extreme ultra violet
JP4320999B2 (ja) 2002-02-04 2009-08-26 株式会社ニコン Ｘ線発生装置及び露光装置
JP2004111454A (ja) * 2002-09-13 2004-04-08 Canon Inc Ｅｕｖ光源における消耗品管理方法
US7109503B1 (en) * 2005-02-25 2006-09-19 Cymer, Inc. Systems for protecting internal components of an EUV light source from plasma-generated debris
JP2006245255A (ja) * 2005-03-03 2006-09-14 Nikon Corp 露光装置、露光方法、および微細パターンを有するデバイスの製造方法
JP2007013054A (ja) * 2005-07-04 2007-01-18 Nikon Corp 投影露光装置及びマイクロデバイスの製造方法
JP5076078B2 (ja) * 2006-10-06 2012-11-21 ギガフォトン株式会社 極端紫外光源装置
JP4842088B2 (ja) * 2006-10-24 2011-12-21 株式会社小松製作所 極端紫外光源装置及びコレクタミラー装置
JP5314433B2 (ja) * 2009-01-06 2013-10-16 ギガフォトン株式会社 極端紫外光源装置
JP5455661B2 (ja) * 2009-01-29 2014-03-26 ギガフォトン株式会社 極端紫外光源装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10062550B2 (en) 2015-08-27 2018-08-28 Samsung Electronics Co., Ltd. Substrate processing apparatus

Also Published As

Publication number Publication date
US7923705B2 (en) 2011-04-12
US20100176310A1 (en) 2010-07-15
JP2010161318A (ja) 2010-07-22

Similar Documents

Publication Publication Date Title
JP5312959B2 (ja) 極端紫外光源装置
JP5314433B2 (ja) 極端紫外光源装置
US8164076B2 (en) Extreme ultraviolet light source apparatus and method of generating extreme ultraviolet light
US8698114B2 (en) Extreme ultraviolet light source device, laser light source device for extreme ultraviolet light source, and method of adjusting laser light source device for extreme ultraviolet light source device
CN105940349B (zh) 辐射源
US8242472B2 (en) Extreme ultraviolet light source device and control method for extreme ultraviolet light source device
US9167679B2 (en) Beam position control for an extreme ultraviolet light source
JP6250067B2 (ja) 極端紫外線光源内の光学素子に対する増幅光ビームの位置調整方法
JP7531638B2 (ja) プラズマをモニタするためのシステム
KR102458094B1 (ko) 극자외 광원을 위한 적응형 레이저 시스템
US20130037693A1 (en) Optical system and extreme ultraviolet (euv) light generation system including the optical system
JP6374481B2 (ja) 極端紫外線光源のビーム位置制御を行うシステム又は方法
JP5076079B2 (ja) 極端紫外光源装置
US20200363728A1 (en) Target supply device, extreme ultraviolet light generation apparatus, and electronic device manufacturing method
TWI821437B (zh) 用於監控光發射之系統、ｅｕｖ光源、及控制ｅｕｖ光源之方法
JP5076078B2 (ja) 極端紫外光源装置
US11067907B2 (en) Target supply device, extreme ultraviolet light generating apparatus, and electronic device manufacturing method
JP2013179330A (ja) 極端紫外光源装置
US20250176090A1 (en) Performance recovery method for euv light generation system, euv light generation system, and processor

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111219

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20111219

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20120713

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130225

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130305

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130425

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20130604

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20130703

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 5312959

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees