JP2010153681A - 真空処理装置 - Google Patents

真空処理装置 Download PDF

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Publication number
JP2010153681A
JP2010153681A JP2008331823A JP2008331823A JP2010153681A JP 2010153681 A JP2010153681 A JP 2010153681A JP 2008331823 A JP2008331823 A JP 2008331823A JP 2008331823 A JP2008331823 A JP 2008331823A JP 2010153681 A JP2010153681 A JP 2010153681A
Authority
JP
Japan
Prior art keywords
vacuum
film
lid
processing apparatus
chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008331823A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010153681A5 (https=
Inventor
Michiaki Kobayashi
満知明 小林
Tsutomu Nakamura
勤 中村
Koji Okuda
浩司 奥田
Shinichi Isozaki
真一 磯崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp, Hitachi High Tech Corp filed Critical Hitachi High Technologies Corp
Priority to JP2008331823A priority Critical patent/JP2010153681A/ja
Priority to KR1020090007919A priority patent/KR101044426B1/ko
Priority to US12/379,642 priority patent/US20100163185A1/en
Publication of JP2010153681A publication Critical patent/JP2010153681A/ja
Publication of JP2010153681A5 publication Critical patent/JP2010153681A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0464—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the transfer chamber

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
JP2008331823A 2008-12-26 2008-12-26 真空処理装置 Pending JP2010153681A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008331823A JP2010153681A (ja) 2008-12-26 2008-12-26 真空処理装置
KR1020090007919A KR101044426B1 (ko) 2008-12-26 2009-02-02 진공처리장치
US12/379,642 US20100163185A1 (en) 2008-12-26 2009-02-26 Vacuum processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008331823A JP2010153681A (ja) 2008-12-26 2008-12-26 真空処理装置

Publications (2)

Publication Number Publication Date
JP2010153681A true JP2010153681A (ja) 2010-07-08
JP2010153681A5 JP2010153681A5 (https=) 2012-03-08

Family

ID=42283458

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008331823A Pending JP2010153681A (ja) 2008-12-26 2008-12-26 真空処理装置

Country Status (3)

Country Link
US (1) US20100163185A1 (https=)
JP (1) JP2010153681A (https=)
KR (1) KR101044426B1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104164661A (zh) * 2013-05-16 2014-11-26 理想能源设备(上海)有限公司 直列式多腔叠层并行处理真空设备及其使用方法

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102366179B1 (ko) * 2019-08-23 2022-02-22 세메스 주식회사 반송 장치 및 이를 가지는 기판 처리 장치

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60227421A (ja) * 1985-04-05 1985-11-12 Hitachi Ltd 真空容器
JPS61119038A (ja) * 1984-11-15 1986-06-06 Toshiba Corp ドライエツチング装置の浄化方法
JPH02198139A (ja) * 1989-01-27 1990-08-06 Fujitsu Ltd 真空処理装置の内壁汚染防止方法
JPH11342538A (ja) * 1998-05-21 1999-12-14 Gmp Co Ltd ラミネート用フィルム
JP2003257938A (ja) * 2002-02-27 2003-09-12 Hitachi High-Technologies Corp プラズマエッチング処理装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05114582A (ja) * 1991-10-22 1993-05-07 Tokyo Electron Yamanashi Kk 真空処理装置
EP0821395A3 (en) * 1996-07-19 1998-03-25 Tokyo Electron Limited Plasma processing apparatus
JP3674282B2 (ja) * 1997-12-25 2005-07-20 日立化成工業株式会社 プラズマ発生装置、そのチャンバー内壁保護部材及びその製造法、チャンバー内壁の保護方法並びにプラズマ処理方法
US6703092B1 (en) * 1998-05-29 2004-03-09 E.I. Du Pont De Nemours And Company Resin molded article for chamber liner
US20080087220A1 (en) * 2003-12-03 2008-04-17 Tokyo Electron Limited Plasma Processing Apparatus and Multi-Chamber System
US7469715B2 (en) * 2005-07-01 2008-12-30 Applied Materials, Inc. Chamber isolation valve RF grounding
US7699957B2 (en) * 2006-03-03 2010-04-20 Advanced Display Process Engineering Co., Ltd. Plasma processing apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61119038A (ja) * 1984-11-15 1986-06-06 Toshiba Corp ドライエツチング装置の浄化方法
JPS60227421A (ja) * 1985-04-05 1985-11-12 Hitachi Ltd 真空容器
JPH02198139A (ja) * 1989-01-27 1990-08-06 Fujitsu Ltd 真空処理装置の内壁汚染防止方法
JPH11342538A (ja) * 1998-05-21 1999-12-14 Gmp Co Ltd ラミネート用フィルム
JP2003257938A (ja) * 2002-02-27 2003-09-12 Hitachi High-Technologies Corp プラズマエッチング処理装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104164661A (zh) * 2013-05-16 2014-11-26 理想能源设备(上海)有限公司 直列式多腔叠层并行处理真空设备及其使用方法

Also Published As

Publication number Publication date
KR101044426B1 (ko) 2011-06-27
US20100163185A1 (en) 2010-07-01
KR20100076850A (ko) 2010-07-06

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