JP2010147303A - Thin-film transistor, method of manufacturing the same, thin-film transistor array substrate, and display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thin-film transistor having both an excellent on-current characteristic and an excellent off-current characteristic, and capable of improving a yield. <P>SOLUTION: In this thin-film transistor, an insulating film 4 having openings in a source region 10S/a drain region 10D is formed between a lower semiconductor layer 11 and an upper semiconductor layer 12; and the lower semiconductor layer 11 and the upper semiconductor layer 12 are connected to each other through the openings H1, H2. At least a channel region 10C arranged between the source region 10S/the drain region 10D and at least a partial region extended from the channel region within a region facing the openings H1, H2 within the lower semiconductor layer 11 are each a polycrystalline semiconductor layer, and the upper semiconductor layer is an amorphous semiconductor layer. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a thin film transistor and a method for manufacturing the same. The present invention also relates to a thin film transistor array substrate including the thin film transistor and a display device.

  Thin film transistors (hereinafter also referred to as “TFTs”) are widely applied to active matrix liquid crystal display devices. A TFT having an inverted stagger structure using amorphous silicon as a semiconductor layer can be manufactured as follows. First, a gate electrode is patterned on a transparent insulating substrate such as glass by a photolithography process and an etching process. Next, a gate insulating film, an amorphous silicon layer containing no impurities, and an amorphous silicon layer containing impurities are successively formed successively by a plasma CVD method. Then, an island-shaped semiconductor layer is obtained by a photolithography process and an etching process. Thereafter, a metal film is formed by sputtering or the like, and a source electrode and a drain electrode are collectively formed by a photolithography process and an etching process.

  After forming the source electrode and the drain electrode, the amorphous silicon layer containing impurities in a region where both electrodes are not present is removed by so-called back channel etching to form a channel region. Thereafter, a passivation film is formed using silicon nitride or the like.

  According to the manufacturing method, the channel region can be formed by self-alignment using the source electrode and the drain electrode as a mask. In addition, a gate insulating film and a semiconductor layer can be sequentially formed. For this reason, the manufacturing process is simple. Further, since the gate insulating film and the semiconductor layer are continuously formed, there is an advantage that variation in TFT characteristics is small. In addition, as a reverse staggered TFT using amorphous silicon as a semiconductor layer, a channel protection type TFT having improved channel etch characteristics has been proposed (for example, Patent Document 1).

However, the amorphous silicon layer constituting the channel region of the TFT is usually composed of an amorphous silicon layer containing a large amount of hydrogen, and there are many defect levels in the film. For this reason, the TFT obtained by the above manufacturing method has a field effect mobility (μ) of 1 cm ² / V · s or less, a large leakage current (Ioff), and a threshold voltage (Vth) due to stress during long-time operation. ) I have a problem of shifting. These characteristics have no problem when used as a switching element, but are difficult to apply to a peripheral circuit for driving them.

  Therefore, as a method of overcoming these problems, there is a method of polycrystallizing amorphous silicon by irradiating an excimer laser (XeCl wavelength: 308 nm) light and performing laser annealing. According to the excimer laser, only the amorphous silicon layer can be melted with little thermal influence on the material such as the oxide film and the glass substrate. Then, after the amorphous silicon layer is melted, the polycrystalline silicon can be formed by cooling.

  In Patent Document 2, there is a method in which a semiconductor layer composed only of an amorphous silicon layer, or a semiconductor layer in which a polycrystalline silicon layer and an amorphous silicon layer are stacked, is formed on the same substrate in accordance with the role of each transistor. Proposed.

  FIG. 9 is a cross-sectional view of the cut portion of the TFT described in Patent Document 2. A gate electrode 102 is formed on the insulating substrate 101, and a gate insulating layer 103 is formed thereon. Next, an amorphous silicon layer for forming a polycrystalline semiconductor layer is formed. Then, an excimer laser is selectively irradiated to a region where the polycrystalline silicon layer is to be formed. After the laser annealing, a pattern of the lower semiconductor layer 111 is obtained by an etching process or the like. Thereafter, an upper semiconductor layer 112 made of an amorphous silicon layer, a source electrode 105, and a drain electrode 106 are formed. By the above method, a semiconductor layer including only the upper semiconductor layer 112 and a semiconductor layer in which the lower semiconductor layer 111 and the upper semiconductor layer 112 are stacked are formed on the same substrate in accordance with the role of each transistor.

  Patent Document 3 proposes a method of manufacturing a thin film transistor in which a polycrystalline silicon layer having microcrystalline grains is directly formed on a substrate by a CVD method. 10A to 10C are cross-sectional views illustrating a manufacturing process of the TFT 252 described in Patent Document 3. First, a gate electrode 202 and a gate insulating film 203 are formed on an insulating substrate 201, and a lower semiconductor layer 211, which is a polycrystalline silicon layer, is directly formed thereon by a CVD method. Subsequently, the upper semiconductor layer 212 is deposited on the lower semiconductor layer 211 by a CVD method.

Specifically, a hydrogenated amorphous silicon layer 212A and a high concentration doped silicon layer 212B are formed (see FIG. 9A). Thereafter, as shown in FIG. 9B, the stacked film from the gate insulating film 203 to the upper semiconductor layer 212 is removed by etching, leaving only the transistor portion in an island shape. The upper semiconductor layer 212 is removed by etching above the gate electrode 202 and separated from the silicon layer in the source region and the silicon layer in the drain region. Next, an interlayer insulating film 204 is formed and patterned to form a source electrode 205 and a drain electrode 206 (see FIG. 9C).
JP-A-8-36192 Japanese Patent No. 2814319 Fig. 2-8 JP-A-2005-57056, page 3-9, FIG.

  In Patent Document 2, a structure in which the side wall portion of the lower semiconductor layer 111 is in contact with the source electrode 105 and the drain electrode 106 is employed. For this reason, the on-current can be increased, but the leakage current (off-current) is increased.

  Patent Document 3 describes that even a thin film transistor using a microcrystalline polycrystalline silicon layer directly formed on a substrate by a CVD method can improve off-state current and improve performance. ing. In addition to this, a method is described in which a polycrystalline silicon layer is crystallized or recrystallized by laser irradiation to be converted into a polycrystalline silicon layer having relatively large crystal grains. Further, it is described that by applying laser irradiation, an off-current and its variation can be reduced, and a monolithic circuit with higher functionality and higher integration can be realized.

  However, laser irradiation causes at least exposure to the atmosphere on the surface of the silicon layer. As a result, an interface is formed at the bonding surface between the silicon layers. At this interface, the adhesion between the silicon layers is poor. Even when peeling does not occur fortunately during film formation, there is a risk that scratches or rubbing may occur due to mechanical contact or the like during the process at the edge of an insulating substrate such as a glass substrate used in a liquid crystal display device. Due to this, the above-mentioned interface portion is easily peeled off. In addition, part of the peeling may become a foreign substance, leading to a decrease in yield or contamination of the manufacturing apparatus.

  The present invention has been made in view of the above background, and the object of the present invention is to provide a thin film transistor that has excellent on-current characteristics and excellent off-current characteristics and that can improve the yield, and the thin film transistor. And a display device.

  A thin film transistor according to the present invention is a thin film transistor in which a gate electrode and a part of a source electrode / drain electrode are arranged to face each other with a semiconductor layer interposed therebetween, and a lower layer on an upper layer of a gate insulating film formed on the gate electrode A semiconductor layer is formed, and an upper semiconductor layer is formed below the source / drain electrodes. An insulating film having an opening in a source region / drain region is formed between the lower semiconductor layer and the upper semiconductor layer, and the lower semiconductor layer and the upper semiconductor layer are interposed through the opening. Connected. Of the lower semiconductor layer, at least a channel region disposed between the source region / drain region, and at least a part of the region extending from the channel region in a region facing the opening, It is a crystalline semiconductor layer, and the upper semiconductor layer is an amorphous semiconductor layer.

  A method of manufacturing a thin film transistor according to the present invention is a method of manufacturing a thin film transistor in which a gate electrode and a part of a source electrode / drain electrode are arranged to face each other through a semiconductor layer, and a gate insulating film is formed on the gate electrode. Forming a film, forming a lower semiconductor layer on the gate insulating film, forming an insulating film having an opening in a source region / drain region on the lower semiconductor layer, and forming an upper semiconductor layer on the insulating film A conductive layer for forming the source / drain electrode is formed on the upper semiconductor layer. Further, a first resist pattern having a step structure in a thickness direction is formed on the conductive layer, and the source electrode / drain electrode, the upper semiconductor layer, the insulating film, using the first resist pattern, The lower semiconductor layer is patterned in an island shape, a second resist pattern is formed so that a thick portion of the first resist pattern remains as a pattern, and the second resist pattern is used as a mask, A step of forming the source / drain electrodes and the source / drain regions by dividing the conductive layer and the upper semiconductor layer; The lower semiconductor layer is formed such that a channel region and at least a part of the source region / drain region extending from the channel region become a polycrystalline semiconductor layer.

  According to the present invention, it is possible to provide a thin film transistor having both excellent on-current characteristics and excellent off-current characteristics and capable of improving yield, a thin film transistor array substrate including the thin film transistor, and a display device. It has an excellent effect.

  Hereinafter, an example of an embodiment to which the present invention is applied will be described. It goes without saying that other embodiments may also belong to the category of the present invention as long as they match the gist of the present invention. Moreover, the size and ratio of each member in the following drawings are for convenience of explanation, and are not limited to this.

  The display device according to the first embodiment is a display device on which an active matrix TFT array substrate having a thin film transistor (TFT) including polycrystalline silicon is mounted. Here, a liquid crystal display device will be described as an example of the display device.

  FIG. 1 is a schematic plan view of a mother substrate 55 according to the first embodiment in which a plurality of portions to be TFT array substrates are formed, and FIG. 2 is a schematic plan view of a liquid crystal display device 50. In FIG. 2, the counter substrate is not shown for convenience of explanation.

  The mother substrate 55 is formed with a plurality of portions to be the TFT array substrate 51 of the pair of substrates constituting the liquid crystal display device 50 (see FIG. 1). In the example of FIG. 1, 12 TFT array substrates 51 are formed in a matrix on a transparent insulating substrate 56 such as a glass substrate or a quartz substrate.

  As shown in FIG. 2, the TFT array substrate 51 includes a gate signal line 21, a gate drive circuit 22, a storage capacitor line 24, a source signal line 31, a source drive circuit 32, and the like.

  A plurality of gate signal lines (scanning signal lines) 21 extend in the horizontal direction in FIG. 2 and are arranged in parallel in the vertical direction. The source signal line (display signal line) 31 extends in the vertical direction in FIG. 2 so as to intersect with the gate signal line 21 via a gate insulating layer (not shown), and a plurality of source signal lines (display signal lines) are arranged in parallel in the horizontal direction. Yes. The plurality of gate signal lines 21 and the plurality of source signal lines 31 form a matrix so as to be substantially orthogonal, and a region surrounded by the adjacent gate signal lines 21 and source signal lines 31 is a pixel 40. Accordingly, the pixels 40 are arranged in a matrix. A region where the plurality of pixels 40 are formed becomes a display region 45. A region partitioned outside the display region 45 is a frame region 46.

  The gate drive circuit 22 and the source drive circuit 32 are formed in the frame region 46 as a peripheral drive circuit. Each gate signal line 21 extends from the display area 45 to the gate drive circuit 22. Similarly, each source signal line 31 extends from the display area 45 to the source drive circuit 32. From the gate drive circuit 22 and the source drive circuit 32, the wiring extends to the terminal, and is connected to the wiring substrate 33 such as an IC chip 34 or an FPC (Flexible Printed Circuit) through the terminal.

  Various signals from the outside are supplied to the gate drive circuit 22 and the source drive circuit 32 via the wiring board 33. The gate driving circuit 22 supplies a gate signal (scanning signal) to the gate signal line 21 based on a control signal from the outside. The gate signal lines 21 are sequentially selected by this gate signal. The source drive circuit 32 supplies a display signal to the source signal line 31 based on an external control signal or display data. As a result, a display voltage corresponding to the display data can be supplied to each pixel 40.

  Near the intersection of the gate signal line 21 and the source signal line 31 of each pixel, at least one signal transmission TFT 52 is provided. Each pixel has a storage capacitor element 42 connected to the TFT 52. The gate electrode of the TFT 52 formed in the pixel is connected to the gate signal line 21, and the source electrode 5 of the TFT 52 is connected to the source signal line 31. When a voltage is applied to the gate electrode, a current flows from the source signal line 31. Thereby, a display voltage is applied from the source signal line 31 to the pixel electrode connected to the drain electrode 6 of the TFT 52. An electric field corresponding to the display voltage is generated between the pixel electrode and the counter electrode.

  On the other hand, the storage capacitor element 42 is electrically connected to the counter electrode through the storage capacitor wiring 24 in addition to the TFT 52. Therefore, the storage capacitor element 42 is connected in parallel with the capacitor between the pixel electrode and the counter electrode. The gate driving circuit 22 and the source driving circuit 32 are also provided with a driving TFT 52 for driving the TFT 52 provided in the pixel 40. An alignment film is formed on the liquid crystal side surface of the TFT array substrate 51.

  Opposed to the mother substrate 55 is a counter mother substrate (not shown) in which a plurality of regions to be the counter substrate (not shown) are formed. The counter substrate is, for example, a color filter substrate, and is disposed on the viewing side. On the counter substrate, a color filter, a black matrix (BM), a counter electrode, an alignment film, and the like are formed. The counter electrode may be arranged on the TFT array substrate 51 side. The liquid crystal display panel is obtained by cutting out a mother substrate 55 and a counter mother substrate disposed so as to face the mother substrate 55 in units of liquid crystal display panels, and injecting liquid crystal between the pair of substrates to seal them.

  A polarizing plate, a retardation plate, and the like are provided on the outer surfaces of the TFT array substrate 51 and the counter substrate. The liquid crystal display device 50 is obtained by disposing a backlight unit or the like on the non-viewing side of the liquid crystal display panel.

  The alignment direction of the liquid crystal molecules is changed by an electric field between the pixel electrode and the counter electrode. The polarization state of light passing through the liquid crystal layer changes according to the change in the orientation of the liquid crystal molecules. That is, the polarization state changes when linearly polarized light formed by passing through the polarizing plate from the backlight unit passes through the liquid crystal layer. Therefore, the amount of light passing through the polarizing plate on the counter substrate side changes depending on the polarization state. That is, among the transmitted light that passes through the liquid crystal display panel from the backlight unit, the amount of light that passes through the viewing-side polarizing plate changes.

  The alignment direction of the liquid crystal changes depending on the applied display voltage. Therefore, the amount of light passing through the viewing-side polarizing plate can be changed by controlling the display voltage. That is, a desired image can be displayed by changing the display voltage for each pixel. In the storage capacitor element 42, the display voltage can be maintained by forming an electric field in parallel with the electric field between the pixel electrode and the counter electrode.

  Next, the structure of the thin film transistor (TFT) according to the first embodiment will be described. FIG. 3 is a schematic cross-sectional view in the vicinity of the TFT according to the first embodiment. As shown in FIG. 3, the TFT 52 is an inverted staggered type, and includes an insulating substrate 1, a gate electrode 2, a gate insulating film 3, an insulating film 4, a source electrode 5, a drain electrode 6, a semiconductor layer 10, and the like. Yes.

  The semiconductor layer 10 includes a lower semiconductor layer 11 made of a polycrystalline semiconductor layer and an upper semiconductor layer 12 made of an amorphous semiconductor layer. The upper semiconductor layer 12 according to the first embodiment has a two-layer structure of a first upper semiconductor layer 12A and a second upper semiconductor layer 12B. In the first embodiment, the lower semiconductor layer 11 is composed of a polycrystalline silicon layer containing no impurities, the first upper semiconductor layer 12A is an amorphous silicon layer containing no impurities, and the second upper semiconductor layer 12B is free of impurities. The amorphous silicon layer is included. The polycrystalline silicon of the lower semiconductor layer 11 used here is preferably polycrystalline silicon made of microcrystalline grains. Note that the fine crystal grains referred to here refer to crystal grains having a grain size of approximately 100 nm or less. Further, the lower semiconductor layer 11 and the first upper semiconductor layer 12A may contain low-concentration impurities without departing from the spirit of the present invention.

  The gate electrode 2 is formed on the insulating substrate 1 and is formed of a first metal film that is the same layer as the gate signal line 21, the storage capacitor wiring 24, the storage capacitor electrode layer (not shown), and the like. The gate insulating film 3 is formed in an upper layer so as to cover the gate electrode 2.

  The gate insulating film 3 may be either a single layer film or a laminated film. For example, a single layer film of silicon nitride (SiNx) or a stacked film of silicon nitride (SiNx) and an oxide film (SiO) can be used. From the viewpoint of maintaining good crystallinity of the lower semiconductor layer 11, it is preferable to stack an oxide film (SiO) on top of silicon nitride (SiNx). By adopting a structure in which a polycrystalline silicon layer is formed on the oxide film, the fixed charge between the polycrystalline semiconductor layer and the interface of the gate insulating film 3 can be reduced. The thickness of the oxide film is preferably 50 nm or more and 200 nm or less. The reason will be described later.

  As described above, the semiconductor layer 10 has a three-layer structure, and the lower semiconductor layer 11 is formed on the gate insulating film 3. The lower semiconductor layer 11 is disposed opposite to at least a part of the gate electrode 2 with the gate insulating film 3 interposed therebetween. Over the lower semiconductor layer 11, an insulating film 4 having a first opening H1 and a second opening H2 is formed.

  The first upper semiconductor layer 12A is disposed in the upper layer of the insulating film 4 and in the first opening H1 and the second opening H2 provided in the insulating film 4. The second upper semiconductor layer 12B is formed in the upper layer of the first upper semiconductor layer 12A. The source electrode 5 and the drain electrode 6 are disposed on the second upper semiconductor layer 12B. In the first embodiment, the upper semiconductor layer 12 and the lower semiconductor layer 11 are connected exclusively through the first opening H1 and the second opening H2. Further, the lower semiconductor layer 11 is formed on the gate insulating film 2, and the upper semiconductor layer 12 is formed below the source electrode 5 and the drain electrode 6. As a result, the source electrode 5 and the drain electrode 6 and the lower semiconductor layer 11 are not in contact with each other, and the problem of an increase in off-current can be avoided.

  The source electrode 5 and the drain electrode 6 are composed of a conductive layer 9 that is a second metal film. In order to form the electrically separated source electrode 5 and drain electrode 6, a third opening H3 penetrating from the surface of the conductive layer 9 to the surface of the insulating film 4 formed on the channel region 10C is formed. . That is, the first upper semiconductor layer 12A and the second upper semiconductor layer 12B are also divided into two by the third opening H3. In other words, in the TFT 52, the pattern of the conductive layer 9 constituting the source electrode 5 and the drain electrode 6 and the pattern of the upper semiconductor layer 12 have substantially the same shape in plan view. As a result, the source electrode 5 and the drain electrode 6 and the lower semiconductor layer 11 are not in contact with each other, and the problem of an increase in off-current can be avoided.

  The source region 10S, the channel region 10C, and the drain region 10D in the semiconductor layer 10 are the following regions (see FIG. 3). That is, the source region 10S includes the formation region of the first opening H1, the first upper semiconductor layer 12A located above the formation region, the lower semiconductor layer 11 disposed below the first opening H1, and the first opening. This is a region of the second upper semiconductor layer 12B disposed on the top of H1. Similarly, the drain region 10D includes the formation region of the second opening H2, the first upper semiconductor layer 12A located above the formation region, the lower semiconductor layer 11 disposed below the second opening H2, and the second This is a region of the second upper semiconductor layer 12B disposed above the opening H2.

  The channel region 10C is a region sandwiched between the source region 10S and the drain region 10D of the lower semiconductor layer 11. That is, the channel region 10 </ b> C is configured by the lower semiconductor layer 11. On the other hand, as described above, the source region 10S and the drain region 10D are configured by the lower semiconductor layer 11, the first upper semiconductor layer 12A, and the second upper semiconductor layer 12B. The source region 10S, the channel region 10C, and the drain region 10D are arranged to face a part of the gate electrode 2. A third opening H3 is formed above the channel region 10C via the insulating film 4.

  The source electrode 5 and the drain electrode 6 are arranged to face a part of the gate electrode 2 through the gate insulating film 3, the lower semiconductor layer 11, the first upper semiconductor layer 12A, and the second upper semiconductor layer 12B. That is, in order to operate as the TFT 52, the thin film transistor region exists on the gate electrode 2 and is easily affected by an electric field when a voltage is applied to the gate electrode 2. In other words, the source electrode 5, the second upper semiconductor layer 12B, the first upper semiconductor layer 12A, and the lower semiconductor layer 11 are connected via the first opening H1. Similarly, the lower electrode semiconductor layer 11 is connected to the drain electrode 6, the second upper semiconductor layer 12B, the first upper semiconductor layer 12A, and the second opening H2.

  In the TFT 52 according to the first embodiment, a plan view in which the pattern of the conductive layer 9 constituting the source electrode 5 and the drain electrode 6 and the third opening H3 that is a gap between the source electrode 5 and the drain electrode 6 are combined. The upper shape and the shape of the pattern of the lower semiconductor layer 11 in plan view are substantially the same. Further, the shapes of the respective patterns of the lower semiconductor layer 11 and the gate insulating film 3 in plan view are practically the same. In other words, when forming the pattern of the conductive layer constituting the source electrode 5 and the drain electrode 6 and the pattern in plan view in which the third opening H3 that is a gap between them is formed, the semiconductor layer 10 and the insulating film 4. The gate insulating film 3 is patterned. As a result, the source electrode 5 and the drain electrode 6 and the lower semiconductor layer 11 are not in contact with each other, and the problem of an increase in off-current can be avoided. In addition, the number of photolithography processes and etching processes for pattern formation can be reduced.

  In the case of the TFT array substrate 51, the “pattern of the conductive layer 9 constituting the source electrode 5 and the drain electrode 6” is a pattern of the conductive layer 9 configured in the same layer as the source electrode 5 and the drain electrode 6. It also means that a pattern such as a certain source signal line 31 is included. When the gate insulating film 3 is formed with a pattern in a plan view in which the pattern of the conductive layer constituting the source electrode 5 and the drain electrode 6 and the third opening H3 that is a gap between them are formed, Etching may be performed similarly. That is, the gate insulating film 3 may be patterned so as to have the same shape as the lower semiconductor layer 11.

  A passivation film (not shown) is formed on the insulating film 4, the source electrode 5, and the drain electrode 6 so as to cover them. In the TFT 52 disposed in the region of the pixel 40, a pixel electrode (not shown) is formed on the passivation film, and the drain electrode 6 and the pixel electrode are connected via a contact hole (not shown) formed in the passivation film. Are electrically connected.

  Next, the manufacturing method of the thin film transistor according to the first embodiment will be described with reference to FIGS. 4 (a) to 4 (d) and FIGS. 5 (e) to 5 (g). In the first embodiment, the switching element thin film transistor disposed in the pixel 40 and the thin film transistors disposed in the gate drive circuit 22 and the source drive circuit 32 have the same configuration, and the two TFTs are distinguished from each other. Without being described as TFT52. These are formed simultaneously.

  First, a first metal film is formed on the insulating substrate 1 to form the gate electrode 2. Examples of the first metal film include Al, Mo, Cr, alloys containing these as main components, and the like. Mo and Cr are more preferable because they are high melting point materials. The first metal film may be a laminated film of these metals. Simultaneously with the formation of the gate electrode 2, a gate signal line and the like are also formed. In the first embodiment, an aluminum alloy film is formed on a glass substrate by a sputtering method, and a desired pattern is formed through a first photolithography process, an etching process, a resist stripping process, and the like (FIG. 4A). reference).

  Next, on the gate electrode 2 and the insulating substrate 1, a gate insulating film 3 and an amorphous semiconductor film for forming a polycrystalline semiconductor film which is the lower semiconductor layer 11 are successively formed by plasma CVD. (See FIG. 4 (a)). In the first embodiment, 200 nm of silicon nitride (SiNx) is formed as the gate insulating film 3, and then an oxide film (SiO) is formed to a thickness of 50 nm.

  After the amorphous silicon layer is formed, dehydration treatment is performed at a temperature of about 400 ° C. for the purpose of suppressing ablation of the amorphous silicon layer during excimer laser irradiation. Then, the natural oxide film grown on the surface is removed from the amorphous silicon layer with a hydrofluoric acid solution or the like, and an excimer laser is irradiated from above the insulating film substrate 1 in an inert gas atmosphere without putting a gap. As a result, the amorphous silicon layer is converted into a polycrystalline silicon layer (see FIG. 4B).

When the amorphous silicon layer is converted to polycrystalline silicon or the like by an excimer laser, the absorption coefficient of the excimer laser with respect to the amorphous silicon layer is 10 ⁶ cm ⁻¹ , so that the absorption of irradiation light from the excimer laser is It is limited to the vicinity of the surface up to about 7 nm from the surface of the amorphous silicon layer. For this reason, crystallinity tends to be non-uniform. In other words, variations in TFT characteristics tend to increase.

  As shown by the arrow in FIG. 3, the movement path of electrons that are carriers of the TFT having the inverted stagger structure is limited to the semiconductor layer near the interface with the gate insulating film 3 located on the side opposite to the laser irradiation side. It is done. For this reason, when the amorphous silicon layer is crystallized, it is necessary to convert it to polycrystalline silicon or the like up to the vicinity of the interface of the gate insulating film 3. However, since the amorphous silicon layer is melted in the depth direction by latent heat, it is difficult to control the crystallization of the amorphous silicon layer near the interface of the gate insulating film 3. TFT characteristics (field effect mobility, leakage current, threshold voltage shift suppression) when an amorphous silicon layer remains in the vicinity of the interface of the gate insulating film or an amorphous part exists in part Is not improved.

  Therefore, the thickness of the amorphous silicon layer to be formed is preferably 30 nm or more and 50 nm or less. A more preferable range is 35 nm or more and 45 nm or less in consideration of in-plane uniformity. In the first embodiment, the amorphous silicon layer of the lower semiconductor layer 11 is formed to have a thickness in the range of 40 nm ± 5 nm.

The irradiation energy density is a lower limit value in which the amorphous silicon layer is once completely melted and recrystallized in the film thickness direction, and the gate electrode 2 and the gate insulating film 3 are thermally damaged during laser irradiation. Set the upper limit value range not to be given. In the manufacturing conditions according to the first embodiment, the irradiation energy density is preferably set to 200 mJ / cm ² or more and 300 mJ / cm ² or less. A more preferred range is crystal grains 250 mJ / cm ² or more to stabilize, it is 300 mJ / cm ² or less. Under the conditions of the first embodiment, the irradiation energy density for damaging the gate electrode 2 was 350 mJ / cm ² .

FIG. 6 shows an AFM image of the surface of the lower semiconductor layer 11 after irradiation with an excimer laser of 250 mJ / cm ² . From the figure, it can be confirmed that circular grains of about 100 nm are densely packed. Further, the surface roughness (Ra) at that time was approximately 3 nm. Further, FIG. 7 shows a cross-sectional TEM photograph of polycrystalline silicon on the oxide film. From the figure, it can be confirmed that the amorphous silicon is crystallized up to the interface of the gate insulating film 3 in the excimer laser irradiation of 250 mJ / cm ² .

  In order to obtain a desired polycrystalline silicon layer by melting the amorphous silicon layer by excimer laser irradiation, a certain irradiation energy density is required as described above. At that time, heat equal to or higher than the latent heat (about 1500 K) of the lower semiconductor layer 11 propagates to the gate insulating film 3. When silicon nitride (SiNx) having a high thermal conductivity is applied as the gate insulating film 3, the thermal influence on the gate electrode 2 is very short. For example, even when an aluminum (Al) alloy having a melting point of about 930 K is used as the gate electrode 2, the gate electrode 2 hardly receives thermal damage.

  On the other hand, when an oxide film (SiO) having a low thermal conductivity is applied as the gate insulating film 3, if the thickness of the oxide film exceeds 200 nm, the thermal influence on the gate electrode 2 may not be ignored. For example, when an aluminum (Al) alloy is used as the gate electrode 2, it takes a long time for the gate electrode 2 to be exposed to a temperature equal to or higher than the melting point. As a result, the gate electrode 2 may be damaged.

  That is, it is necessary to satisfy both the irradiation energy density for obtaining the desired crystallinity and the irradiation energy density that does not damage the gate electrode 2. When an aluminum alloy is used for the gate electrode 2 and an oxide film (SiO) is used for the gate insulating film 3 in order to reduce the fixed charge between the polycrystalline semiconductor layer and the interface of the gate insulating film 3, the upper limit film thickness of the oxide film is set. The thickness is preferably 200 nm or less. In addition, from the viewpoint of keeping the crystallinity of the polycrystalline semiconductor layer favorable, it is preferable that the lower limit film thickness of the oxide film be 50 nm or more. Of course, when the high melting point material molybdenum (Mo) or chromium (Cr) is used as the gate electrode 2, the allowable temperature can be further increased as compared with the aluminum (Al) alloy. That is, film thickness conditions, irradiation conditions, and the like may be set as appropriate in accordance with materials and the like.

  Next, after the first semiconductor layer, which is a polycrystalline silicon layer, is once washed with hydrofluoric acid or the like, the insulating film 4 is formed on the lower semiconductor layer 11 (see FIG. 4C). The insulating film 4 is not particularly limited by materials as long as it does not depart from the spirit of the present invention, but preferred examples include an oxide film (SiO) and silicon nitride (SiNx). As a result of examining TFT characteristics when an oxide film (SiO) is applied as the insulating film 4 and when silicon nitride (SiNx) is applied, it was confirmed that there is no particular influence. In the first embodiment, an oxide film (SiO) is used.

  The film thickness of the insulating film 4 is set to be larger than at least the film thickness of the lower semiconductor layer 11. The reason for this is that as the lower semiconductor layer 11 is crystallized, the unevenness of the crystal grain surface becomes larger, and the convex portion is about the thickness of the amorphous silicon layer (approximately 40 nm). At this time, the average roughness (Ra) of the surface of the lower semiconductor layer 11 is about 3 to 4 nm. Therefore, it is preferable to increase the thickness of the insulating film 4 so that the surface of the lower semiconductor layer 11 is sufficiently coated. In the first embodiment, the film thickness is 100 nm.

  In the insulating film 4, the first opening H1 and the second opening H2 are formed in the source region 10S and the drain region 10D, respectively, by a second photolithography process. At this time, etching is performed so as not to cut the surface of the lower semiconductor layer 11 as much as possible. The dimensional accuracy of the first opening H1 and the second opening H2 is determined by the second photolithography process.

  Subsequently, the first upper semiconductor layer 12A and the second upper semiconductor layer 12B are sequentially formed on the insulating film 4 (see FIG. 4D). As described above, the first upper semiconductor layer 12A is an amorphous silicon layer containing no impurities, and the second upper semiconductor layer 12B is an amorphous silicon layer containing impurities. The second upper semiconductor layer 12B is, for example, a phosphorus (P) doped n-type amorphous silicon layer.

  By introducing impurities into the second upper semiconductor layer 12B, the resistance can be reduced and the ohmic contact characteristics of the source electrode 5 and the drain electrode 6 can be maintained. By continuously forming the first upper semiconductor layer 12A and the second upper semiconductor layer 12B, the ohmic property of the bonding surfaces of the respective films can be kept good. In addition, manufacturing variations can be reduced. The first upper semiconductor layer 12A and the second upper semiconductor layer 12B do not need to be clearly distinguished, and are formed so as to have a concentration gradient such that the impurity concentration increases toward the source electrode 5 and drain electrode 6 sides. May be.

  According to the first embodiment, most of the contact region on the lower surface side of the first upper semiconductor layer 12A is the insulating film 4, and contacts the lower semiconductor layer 11 in the regions of the first opening H1 and the second opening H2. To do. As described above, there is a problem in that the interface between the polycrystalline semiconductor layer and the amorphous semiconductor layer easily peels off. According to the first embodiment, the contact region between the lower semiconductor layer 11 and the first upper semiconductor layer 12A can be reduced to suppress the peeling of the interface. As a result, it is possible to prevent a decrease in yield.

  Subsequently, a conductive layer 9 which is a second metal film for forming the source electrode 5 and the drain electrode 6 is formed by sputtering. For the conductive layer 9, similarly to the gate electrode 2, a material such as Al, Cr, Mo, or an alloy containing them can be used. It is also possible to configure with a laminated film. After the film formation, a first resist pattern 17 having a step structure in the film thickness direction is formed on the conductive layer 9 (see FIG. 5E).

  The first resist pattern 17 can be obtained by applying a known halftone exposure technique or gray tone exposure technique. Specifically, a pattern is set such that the film thickness of the region corresponding to the formation region of the third opening H3 is thinner than the film thickness of the region where the source electrode 5 and the drain electrode 6 are formed. Next, the conductive film 9, the second upper semiconductor layer 12B, the first upper semiconductor layer 12A, the insulating film 4, and the lower semiconductor layer 11 are etched by an etching process using the first resist pattern 17 as a mask. As a result, as shown in FIG. 5F, in the region where the first resist pattern 17 is not masked, the conductive film 9, the second upper semiconductor layer 12B, the first upper semiconductor layer 12A, the insulating film 4, and the lower layer The semiconductor layer 11 is removed.

  Next, the film thickness is uniformly reduced by ashing so that the thick part of the first resist pattern 17 remains as a pattern. Thereby, the second resist pattern 18 is obtained. The second resist pattern 18 has a pattern in which the surface of the conductive layer 9 in a region corresponding to the formation region of the third opening H3 is exposed. Then, the third opening H3 is formed by etching using the second resist pattern 18 as a mask. As a result, as shown in FIG. 5G, a pattern of the source electrode 5 and the drain electrode 6 having a desired shape, the third opening H3, and the like are obtained.

  Thereafter, a passivation film is formed by plasma CVD or the like so as to cover the gate insulating film 3, the channel region 10C, the source electrode 5, and the drain electrode 6. For example, silicon nitride can be used as the passivation film. Through the above steps, the TFT 52 is completed.

  The TFTs used for the gate drive circuit 22 and the source drive circuit 32 are always operating. For this reason, when a TFT made of an amorphous silicon layer is used for the gate drive circuit 22 and the source drive circuit 32, there is a problem that a Vth shift occurs due to continuous operation for a long time and normal drive operation is not performed. there were. That is, there is a problem that normal display cannot be performed. Therefore, an external IC chip is used for the operation of the gate drive circuit 22 and the source drive circuit 32.

  In the TFT 52 according to the first embodiment, the semiconductor layer in the vicinity of the interface with the gate insulating film is polycrystallized. Thereby, an excellent on-current can be provided. In other words, the field effect mobility (μ) can be increased. Further, trap density and defect level can be reduced in the crystallized silicon layer and its interface. As a result, the threshold voltage shift (Vth shift) when operated for a long time can be significantly suppressed as compared with the case where a conventional amorphous silicon layer is used.

  The TFT according to the first embodiment has excellent on-current characteristics and excellent off-current characteristics, and can suppress a threshold voltage shift when operated for a long time. Since these characteristics are combined and the yield can be improved, the stability during production increases. Furthermore, the polycrystalline silicon layer is made of polycrystalline silicon having fine crystal grains of approximately 100 nm or less, so that variation in crystal grain size can be suppressed to about 20% or less, and crystallinity can be made uniform. At the same time, further reduction of off-current can be realized. As a result, it is possible to achieve uniform transistor characteristics in the display surface required for TFTs for switching elements and to improve off-current characteristics, thereby improving the display characteristics. In other words, the characteristics required for the TFT for the peripheral drive circuit and the TFT for the switching element can be satisfied at the same time. In addition, when an amorphous silicon layer is converted into a polycrystalline silicon layer by an excimer laser to obtain microcrystalline silicon, an appropriate laser energy range for obtaining microcrystalline silicon of approximately 100 nm or less is generally used. Since it is several times wider than the appropriate laser energy range for obtaining crystalline silicon, it can be stably manufactured.

  By simultaneously forming the TFT for the peripheral drive circuit and the TFT for the switching element on the same substrate, the number of parts of the IC chip can be reduced. That is, it can be expected to realize weight reduction, weight reduction, and further miniaturization. Therefore, the present invention can be particularly suitably applied to an application in which a TFT for a peripheral drive circuit and a TFT for a switching element in a pixel are simultaneously formed on the same substrate. Of course, it goes without saying that the thin film transistor of the present invention can be used for other purposes.

  In Patent Document 2, a structure in which the source electrode 105 and the drain electrode 106 and the side wall of the lower semiconductor layer 111 that is a polycrystalline silicon layer are in direct contact is employed. On the other hand, the TFT 52 according to the first embodiment employs a structure in which the source electrode 5 and the drain electrode 6 and the lower semiconductor layer 11 are not in direct contact. As a result, in particular, current due to an electric field generated when an applied voltage is applied to the drain side is less likely to leak to the drain electrode 6 side. That is, the off current can be suppressed. Further, by adopting a method in which an amorphous silicon layer is converted into a polycrystalline silicon layer by laser light irradiation, off-state current and variations thereof can be reduced.

  Further, as in Patent Document 3, an amorphous silicon layer is not laminated on the entire surface of the crystallized silicon layer, and a structure in which these are connected through the openings H1 and H2 of the insulating film 4 is adopted. Therefore, good contact resistance can be maintained. Further, the problem of decrease in adhesion at these interfaces can be improved, and the yield can be improved.

  According to the manufacturing method of the TFT 52 according to the first embodiment, productivity can be improved and cost can be reduced as compared with the case where the driving IC is separately mounted. Further, it is possible to prevent quality loss during mounting. Moreover, according to the first embodiment, the number of masks until the formation of the source electrode / drain electrode is reduced by one as compared with the above-mentioned Patent Document 3, and the mask can be manufactured with the same number of masks as the back channel etch type TFT. it can. Further, in the case of the back channel etch type, there is a problem that plasma damage remains in the channel region. However, according to the first embodiment, since the insulating film 4 is laminated in the channel region, the above problem can be solved. Can do. Moreover, it has the merit that it can manufacture with the existing manufacturing apparatus, without introducing a new manufacturing apparatus.

  From the above, by applying the present invention, it is possible to provide a thin film transistor, a thin film transistor array substrate, a display device, and a method for manufacturing the same, which have improved TFT performance, improved reliability, improved yield, and improved quality. Also, cost reduction can be realized.

  In addition, although the example which uses an excimer laser as a light source of laser annealing was described, it is not limited to this, A polycrystalline semiconductor layer can be obtained by another method in the range which does not deviate from the meaning of this invention. For example, a YAG laser may be irradiated instead of the excimer laser. By using the second harmonic of the YAG laser, crystallization can proceed efficiently in the depth direction.

  In the first embodiment, an example of amorphous silicon as an amorphous semiconductor layer and polycrystalline silicon as an example of a polycrystalline semiconductor layer have been described. However, the present invention is not limited to this example. It can be widely applied to other semiconductor layers. In order to further improve the TFT characteristics, a crystal defect recovery treatment at the silicon interface or a heat treatment for reducing the defect level in the film may be performed.

  In the first embodiment, an example in which a TFT array substrate is mounted on a liquid crystal display device has been described. However, the present invention is not limited to this, and an EL display device (organic EL display device, inorganic EL display device) or the like is used. It can be suitably mounted on a flat display device (flat panel display). In the case of an organic EL display device, an anode electrode as a pixel electrode and a cathode electrode as a counter electrode are provided on a TFT array substrate. An organic layer is disposed between the anode electrode and the cathode electrode. Note that whether the pixel electrode is an anode electrode or a cathode electrode may be appropriately selected depending on the optical design.

  By supplying a current between the anode electrode and the cathode electrode, holes are injected from the anode electrode and electrons are injected from the cathode electrode into the organic layer to recombine. The molecules of the luminescent compound in the organic layer are excited by the energy generated at that time. The excited molecules are deactivated to the ground state, and the organic layer emits light in the process. Then, the light emitted from the organic layer is emitted to the viewing side. In order to propagate a desired current to the organic EL element, a drive circuit, a switching element, and a correction circuit are required, and a plurality of TFTs are formed. In particular, it is required to reduce fluctuations in driving capability and threshold voltage of these TFTs. Therefore, the present invention is particularly effective as a TFT array substrate mounted on an organic EL display device.

[Embodiment 2]
Next, an example of a TFT having a structure different from that of the above embodiment will be described. In the following description, the same elements as those in the above embodiment are denoted by the same reference numerals, and the description thereof is omitted as appropriate.

  The basic structure and manufacturing method of the TFT according to the second embodiment are the same as those of the first embodiment except for the following points. That is, the lower semiconductor layer 11 according to the first embodiment is formed by converting the formed amorphous silicon layer into a polycrystalline silicon layer in the entire region, but the lower semiconductor according to the second embodiment. The layers are different in that only the lower semiconductor layer 11a facing the first opening H1, the second opening H2, and the channel region 10C is formed by converting the amorphous silicon layer to the polycrystalline silicon layer. .

  FIG. 8 is a schematic cross-sectional view in the vicinity of the TFT according to the second embodiment. As described above, the lower semiconductor layer 11a of the TFT 52a converts the channel region 10C and the regions facing the first opening H1 and the second opening H2 from the amorphous silicon layer to the polycrystalline silicon layer A, The other region is constituted by the amorphous silicon layer 11B. Specifically, the above configuration is obtained by selectively irradiating the excimer laser to the channel region 10C and the lower semiconductor layer 11a facing the first opening H1 and the second opening H2. The selective irradiation of the laser beam can be easily performed by using, for example, a metal mask.

  According to the second embodiment, since the channel region 10C, the source region 10S, and the drain region 10D of the lower semiconductor layer 11a are the polycrystalline silicon layers, the same effect as in the first embodiment can be obtained.

  In the lower semiconductor layer 11a according to the second embodiment, the channel region 10C and the lower semiconductor layer 11a facing the first opening H1 and the second opening H2 are changed from an amorphous silicon layer to a polycrystalline silicon layer. Although an example of conversion is described, the lower semiconductor layer 11a constituting the channel region 10C, at least a part extending from the channel region 10C of the first opening H1, and the second opening H2 The lower semiconductor layer 11a facing at least a part extending from the channel region 10C may be a polycrystalline semiconductor layer.

  In the first and second embodiments, the switching element TFT disposed in the pixel 40 and the TFT disposed in the peripheral driving circuit such as the gate driving circuit 22 have the same configuration. However, the present invention is not limited to this. For example, in the same TFT array substrate, only the lower semiconductor layer 11 of the peripheral drive circuit TFT is selectively irradiated with laser to be converted into a polycrystalline semiconductor layer, and the switching element TFT is formed of an amorphous semiconductor layer. You may apply as it is.

  In the first and second embodiments, the resist pattern formed on the upper layer of the source electrode / drain electrode is a resist pattern having a step structure in the film thickness direction by applying a halftone exposure technique or the like. It does not exclude what forms a pattern with the resist pattern. Further, an example in which a laser annealing method is applied as a method for obtaining a polycrystalline semiconductor layer of the lower semiconductor layer 11 has been described. However, a polycrystalline semiconductor layer or a microcrystalline semiconductor layer is directly stacked depending on required characteristics. A method may be applied.

FIG. 3 is a schematic plan view illustrating a configuration of a mother substrate according to the first embodiment. 1 is a schematic plan view of a liquid crystal display device according to Embodiment 1. FIG. 2 is a schematic cross-sectional view in the vicinity of a TFT according to Embodiment 1. FIG. (A)-(d) is manufacturing process sectional drawing of TFT which concerns on Embodiment 1. FIG. FIGS. 4E to 4G are cross-sectional views of manufacturing steps of the TFT according to the first embodiment. 2 is an AFM image of a polycrystalline semiconductor layer according to Embodiment 1. (250 mJ / cm ² ) 2 is a TEM image of a polycrystalline semiconductor layer according to Embodiment 1. (250 mJ / cm ² ) FIG. 5 is a schematic cross-sectional view in the vicinity of a TFT according to Embodiment 2. FIG. 6 is a schematic cross-sectional view of a TFT described in Patent Document 2. FIG. 6 is a schematic cross-sectional view of a TFT described in Patent Document 3.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Insulating substrate 2 Gate electrode 3 Gate insulating film 4 Insulating film 5 Source electrode 6 Drain electrode 9 Conductive film 10 Semiconductor layer 11 Lower layer semiconductor layer 12 Upper layer semiconductor layer 12A First upper layer semiconductor layer 12B Second upper layer semiconductor layer 17 First resist Pattern 18 Second resist pattern 21 Gate signal line 22 Gate drive circuit 24 Storage capacitor wiring 31 Source signal line 32 Source drive circuit 33 Wiring substrate 40 Pixel 45 Display region 46 Frame region 50 Liquid crystal display device 51 Thin film transistor array substrate 52 TFT
55 Mother board

Claims (11)

A thin film transistor in which a gate electrode and a part of a source electrode / drain electrode are arranged to face each other via a semiconductor layer,
A lower semiconductor layer is formed on an upper layer of the gate insulating film formed on the gate electrode;
An upper semiconductor layer is formed under the source / drain electrodes,
Between the lower semiconductor layer and the upper semiconductor layer, an insulating film having an opening in the source region / drain region is formed,
The lower semiconductor layer and the upper semiconductor layer are connected via the opening,
Of the lower semiconductor layer, at least a channel region disposed between the source region / drain region, and at least a part of the region extending from the channel region in a region facing the opening, A crystalline semiconductor layer,
The upper semiconductor layer is a thin film transistor which is an amorphous semiconductor layer.   The shape of the lower semiconductor layer in plan view is substantially the same as the shape of the conductive layer constituting the source electrode / drain electrode and the shape in plan view of the gap between the source electrode / drain electrode. The thin film transistor according to claim 1, wherein:   The thin film transistor according to claim 1 or 2, wherein the entire region of the lower semiconductor layer is a polycrystalline semiconductor layer.   4. The thin film transistor according to claim 1, wherein the upper semiconductor layer is an amorphous silicon layer, and the lower semiconductor layer is a polycrystalline silicon layer made of microcrystalline grains. 5. . The gate insulating film is a laminated film,
5. The thin film transistor according to claim 1, wherein the layer in contact with the lower semiconductor layer is formed of an oxide film having a thickness of 50 nm to 200 nm. A method of manufacturing a thin film transistor in which a gate electrode and a part of a source electrode / drain electrode are arranged to face each other through a semiconductor layer,
Forming a gate insulating film on the gate electrode;
Forming a lower semiconductor layer on the gate insulating film;
Forming an insulating film having an opening in a source region / drain region on the lower semiconductor layer;
An upper semiconductor layer is formed on the insulating film,
Forming a conductive layer on the upper semiconductor layer to form the source / drain electrodes;
A first resist pattern having a step structure in the thickness direction is formed on the conductive layer,
Patterning the source / drain electrodes, the upper semiconductor layer, the insulating film, and the lower semiconductor layer using the first resist pattern;
Forming a second resist pattern so that a thick portion of the first resist pattern remains as a pattern;
Forming the source electrode / drain electrode and the source region / drain region by dividing the conductive layer and the upper semiconductor layer using the second resist pattern as a mask,
The method of manufacturing a thin film transistor, wherein the lower semiconductor layer is formed such that a channel region and at least a part of the source region / drain region extending from the channel region become a polycrystalline semiconductor layer.   7. The thin film transistor according to claim 6, wherein the lower semiconductor layer is formed by forming an amorphous semiconductor layer and then converting at least a part of the region into a polycrystalline semiconductor layer. Production method.   The amorphous semiconductor layer for forming the lower semiconductor layer is formed to have a film thickness of 30 nm or more and 50 nm or less, and the conversion from the amorphous semiconductor layer to the polycrystalline semiconductor layer is 8. The method of manufacturing a thin film transistor according to claim 7, wherein the method is performed by irradiating an excimer laser. The method of manufacturing a thin film transistor according to claim 8, wherein the irradiation energy of the excimer laser is 200 mJ / cm ² or more and 300 mJ / cm ² or less.   A thin film transistor array substrate comprising the thin film transistor according to claim 1.   A display apparatus provided with the thin-film transistor of any one of Claims 1-5.