JP2010147051A - 半導体集積回路装置および半導体集積回路装置の製造方法 - Google Patents

半導体集積回路装置および半導体集積回路装置の製造方法 Download PDF

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Publication number
JP2010147051A
JP2010147051A JP2008319355A JP2008319355A JP2010147051A JP 2010147051 A JP2010147051 A JP 2010147051A JP 2008319355 A JP2008319355 A JP 2008319355A JP 2008319355 A JP2008319355 A JP 2008319355A JP 2010147051 A JP2010147051 A JP 2010147051A
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Prior art keywords
film
integrated circuit
semiconductor integrated
circuit device
item
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JP2008319355A
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Japanese (ja)
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JP2010147051A5 (https=
Inventor
Hiroshi Tsukamoto
博 塚本
Hiromi Abe
宏美 阿部
Katsunari Iwama
克成 岩間
Akira Yajima
明 矢島
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Renesas Technology Corp
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Renesas Technology Corp
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Priority to JP2008319355A priority Critical patent/JP2010147051A/ja
Publication of JP2010147051A publication Critical patent/JP2010147051A/ja
Publication of JP2010147051A5 publication Critical patent/JP2010147051A5/ja
Pending legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/01Manufacture or treatment
    • H10W72/019Manufacture or treatment of bond pads
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60Insulating or insulated package substrates; Interposers; Redistribution layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07531Techniques
    • H10W72/07532Compression bonding, e.g. thermocompression bonding
    • H10W72/07533Ultrasonic bonding, e.g. thermosonic bonding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/075Connecting or disconnecting of bond wires
    • H10W72/07541Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07551Controlling the environment, e.g. atmosphere composition or temperature characterised by changes in properties of the bond wires during the connecting
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/536Shapes of wire connectors the connected ends being ball-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/5363Shapes of wire connectors the connected ends being wedge-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/551Materials of bond wires
    • H10W72/552Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/59Bond pads specially adapted therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/921Structures or relative sizes of bond pads
    • H10W72/922Bond pads being integral with underlying chip-level interconnections
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/921Structures or relative sizes of bond pads
    • H10W72/923Bond pads having multiple stacked layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/931Shapes of bond pads
    • H10W72/932Plan-view shape, i.e. in top view
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/9415Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/942Dispositions of bond pads relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/951Materials of bond pads
    • H10W72/952Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/981Auxiliary members, e.g. spacers
    • H10W72/983Reinforcing structures, e.g. collars
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Wire Bonding (AREA)
JP2008319355A 2008-12-16 2008-12-16 半導体集積回路装置および半導体集積回路装置の製造方法 Pending JP2010147051A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008319355A JP2010147051A (ja) 2008-12-16 2008-12-16 半導体集積回路装置および半導体集積回路装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008319355A JP2010147051A (ja) 2008-12-16 2008-12-16 半導体集積回路装置および半導体集積回路装置の製造方法

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JP2010147051A true JP2010147051A (ja) 2010-07-01
JP2010147051A5 JP2010147051A5 (https=) 2012-01-26

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015115596A (ja) * 2013-12-13 2015-06-22 チップモス テクノロジーズ インコーポレイテッドChipmos Technologies Inc. 半導体構造およびその製造方法
JP2016152328A (ja) * 2015-02-18 2016-08-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003152014A (ja) * 2001-11-09 2003-05-23 Shinko Electric Ind Co Ltd 半導体装置の製造方法及び半導体装置
JP2008283024A (ja) * 2007-05-11 2008-11-20 Spansion Llc 半導体装置及びその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003152014A (ja) * 2001-11-09 2003-05-23 Shinko Electric Ind Co Ltd 半導体装置の製造方法及び半導体装置
JP2008283024A (ja) * 2007-05-11 2008-11-20 Spansion Llc 半導体装置及びその製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015115596A (ja) * 2013-12-13 2015-06-22 チップモス テクノロジーズ インコーポレイテッドChipmos Technologies Inc. 半導体構造およびその製造方法
JP2016152328A (ja) * 2015-02-18 2016-08-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
EP3067923A1 (en) * 2015-02-18 2016-09-14 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same
US10586777B2 (en) 2015-02-18 2020-03-10 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same

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