JP2010145388A - センサー用酸化物半導体ナノ繊維の製造方法及びそれを利用したガスセンサー - Google Patents
センサー用酸化物半導体ナノ繊維の製造方法及びそれを利用したガスセンサー Download PDFInfo
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- 239000002121 nanofiber Substances 0.000 title claims abstract description 63
- 239000004065 semiconductor Substances 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 239000002184 metal Substances 0.000 claims abstract description 17
- 239000013078 crystal Substances 0.000 claims abstract description 7
- 239000002131 composite material Substances 0.000 claims description 26
- 229920000642 polymer Polymers 0.000 claims description 25
- 230000007613 environmental effect Effects 0.000 claims description 20
- 231100001261 hazardous Toxicity 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 8
- 239000002904 solvent Substances 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 6
- 230000005855 radiation Effects 0.000 claims description 6
- 229920001296 polysiloxane Polymers 0.000 claims description 5
- 241000877463 Lanio Species 0.000 claims description 4
- 229910002367 SrTiO Inorganic materials 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 4
- 239000012702 metal oxide precursor Substances 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 238000005303 weighing Methods 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000007789 gas Substances 0.000 abstract description 58
- 230000035945 sensitivity Effects 0.000 abstract description 14
- 230000008859 change Effects 0.000 abstract description 8
- 229910052760 oxygen Inorganic materials 0.000 abstract description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 6
- 239000001301 oxygen Substances 0.000 abstract description 6
- 239000000203 mixture Substances 0.000 abstract description 5
- 230000003647 oxidation Effects 0.000 abstract description 3
- 238000007254 oxidation reaction Methods 0.000 abstract description 3
- 238000006722 reduction reaction Methods 0.000 abstract description 3
- 238000001179 sorption measurement Methods 0.000 abstract description 3
- 230000004043 responsiveness Effects 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- 230000002035 prolonged effect Effects 0.000 abstract 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 17
- 239000000463 material Substances 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000835 fiber Substances 0.000 description 4
- 230000007774 longterm Effects 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 3
- 238000000724 energy-dispersive X-ray spectrum Methods 0.000 description 3
- 230000036541 health Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000002159 nanocrystal Substances 0.000 description 3
- 239000002086 nanomaterial Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 239000002341 toxic gas Substances 0.000 description 2
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229920001665 Poly-4-vinylphenol Polymers 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000007084 catalytic combustion reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000002127 nanobelt Substances 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- -1 nanoporous Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
【解決手段】本発明によるセンサーは、絶縁基板と、前記絶縁基板上に形成されている金属電極と、前記金属電極上に形成されており、酸化物半導体Lan+1NinO3n+1(n=1、2、3)ナノ繊維を含む感知層とを含む。したがって、酸化物半導体Lan+1NinO3n+1(n=1、2、3)は、ABO3型の基本結晶構造を有するので、構造的に安定し、酸素欠陥による非化学量論的な組成を有する代表的な物質であって、表面に多い酸素欠陥を有していて、酸化物の表面で反応ガス吸着及び酸化/還元反応によって大きい電気抵抗の変化を有することができる。
【選択図】図1
Description
前記絶縁基板上に前記酸化物半導体/ポリマー複合溶液を電気放射法で放射して塗布することができる。
図1は、本発明によるナノ繊維の斜視図であり、図2は、図1のナノ繊維の製造過程を説明する流れ図である。
まず、金属酸化物前駆体、ポリマー及び溶媒をそれぞれ準備する(S10)。
図3は、図1の一実施例の酸化物半導体ナノ繊維の表面を走査電子顕微鏡で取った写真であり、図4は、図3の酸化物半導体ナノ繊維のエネルギー分散X線分光スペクトル(EDS:Energy Dispersive X-ray Spectroscopy)結果である。
図5は、本発明の酸化物半導体LNOナノ繊維を利用したガスセンサーの構成図であり、図6は、図5に示されたセンサーのNO2ガス反応に対する電気抵抗の変化を示す図であり、図7は、図5に示されたセンサーのNO2ガス濃度変化による敏感度の変化を示すグラフである。
120 酸化物半導体ナノ繊維
Claims (9)
- 酸化物半導体/ポリマー複合溶液を製造する段階と、
基板上に前記酸化物半導体/ポリマー複合溶液を塗布する段階と、
前記酸化物半導体/ポリマー複合溶液が塗布された基板を熱処理し、酸化物半導体Lan+1NinO3n+1(n=1、2、3)ナノ繊維を形成する段階と
を含む環境有害ガスセンサー用酸化物半導体ナノ繊維の製造方法。 - 前記酸化物半導体/ポリマー複合溶液を製造する段階は、
金属酸化物前駆体、高分子及び溶媒を所定の重さまたは体積比で秤量して混合する段階と、
常温以上の温度で撹拌し、前記酸化物半導体/ポリマー複合溶液を製造する段階とを含むことを特徴とする請求項1に記載の環境有害ガスセンサー用酸化物半導体ナノ繊維の製造方法。 - 前記絶縁基板上に前記酸化物半導体/ポリマー複合溶液を電気放射法で放射して塗布することを特徴とする請求項2に記載の環境有害ガスセンサー用酸化物半導体ナノ繊維の製造方法。
- 前記酸化物半導体Lan+1NinO3n+1(n=1、2、3)は、LaNiO3+δ、La2NiO4+δ、La3Ni2O7-δ、またはLa4Ni3O10-δであることを特徴とする請求項2に記載の環境有害ガスセンサー用酸化物半導体ナノ繊維の製造方法。
- 絶縁基板と、
前記絶縁基板上に形成されている金属電極と、
前記金属電極上に形成されており、酸化物半導体Lan+1NinO3n+1(n=1、2、3)ナノ繊維を含む感知層と、を含む環境有害ガスセンサー。 - 前記基板は、Al2O3、MgOまたはSrTiO3からなる単結晶基板、Al2O3、石英からなるセラミック基板、絶縁層が塗布されたシリコーン基板またはガラス基板であることを特徴とする請求項5に記載の環境有害ガスセンサー。
- 前記金属電極は、Pt、Ni、W、TiまたはCrを含むことを特徴とする請求項5に記載の環境有害ガスセンサー。
- 前記酸化物半導体ナノ繊維の直径が1nm乃至100nmであることを特徴とすることを特徴とする請求項5に記載の環境有害ガスセンサー。
- 前記環境有害ガスセンサーは、
前記金属電極と同一平面上に、または背面に形成されているマイクロ薄膜ヒータをさらに含むことを特徴とする請求項7に記載の環境有害ガスセンサー。
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WO2013033367A1 (en) * | 2011-08-30 | 2013-03-07 | Cornell University | Metal and ceramic nanofibers |
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KR101191386B1 (ko) | 2012-10-15 |
KR20100071618A (ko) | 2010-06-29 |
US20100155691A1 (en) | 2010-06-24 |
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