JP2010135777A5 - Semiconductor device - Google Patents
Semiconductor device Download PDFInfo
- Publication number
- JP2010135777A5 JP2010135777A5 JP2009253687A JP2009253687A JP2010135777A5 JP 2010135777 A5 JP2010135777 A5 JP 2010135777A5 JP 2009253687 A JP2009253687 A JP 2009253687A JP 2009253687 A JP2009253687 A JP 2009253687A JP 2010135777 A5 JP2010135777 A5 JP 2010135777A5
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- Japan
- Prior art keywords
- oxide semiconductor
- semiconductor layer
- wiring
- gate electrode
- insulating layer
- Prior art date
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Claims (3)
第２のゲート電極と、A second gate electrode,
前記第１のゲート電極及び前記第２のゲート電極上の第１の絶縁層と、A first insulating layer on the first gate electrode and the second gate electrode;
前記第１の絶縁層上に設けられ、前記第１のゲート電極と重なる領域を有する第１の酸化物半導体層と、A first oxide semiconductor layer provided over the first insulating layer and having a region overlapping with the first gate electrode;
前記第１の絶縁層上に設けられ、前記第２のゲート電極と重なる領域を有する第２の酸化物半導体層と、A second oxide semiconductor layer provided over the first insulating layer and having a region overlapping with the second gate electrode;
前記第１の絶縁層上の第１の配線と、A first wire on the first insulating layer,
前記第１の絶縁層上の第２の配線と、A second wire on the first insulating layer,
前記第１の絶縁層上の第３の配線と、A third wire on the first insulating layer,
前記第１の酸化物半導体層及び前記第２の酸化物半導体層上の有機絶縁層と、An organic insulating layer on the first oxide semiconductor layer and the second oxide semiconductor layer;
を有し、Have
前記第１の酸化物半導体層上に、前記第１の配線及び前記第２の配線を有し、The first wiring and the second wiring are provided over the first oxide semiconductor layer,
前記第２の酸化物半導体層上に、前記第２の配線及び前記第３の配線を有し、The second wiring and the third wiring are provided over the second oxide semiconductor layer,
前記第１の配線は、前記第１の酸化物半導体層に電気的に接続され、The first wiring is electrically connected to the first oxide semiconductor layer,
前記第２の配線は、前記第１の酸化物半導体層及び前記第２の酸化物半導体層に電気的に接続され、The second wiring is electrically connected to the first oxide semiconductor layer and the second oxide semiconductor layer,
前記第３の配線は、前記第２の酸化物半導体層に電気的に接続され、The third wiring is electrically connected to the second oxide semiconductor layer,
前記第２の配線は、前記第１の絶縁層に設けられたコンタクトホールを介して、前記第２のゲート電極に電気的に接続されていることを特徴とする半導体装置。A semiconductor device characterized in that the second wiring is electrically connected to the second gate electrode through a contact hole provided in the first insulating layer.
第２のゲート電極と、A second gate electrode,
前記第１のゲート電極及び前記第２のゲート電極上の第１の絶縁層と、A first insulating layer on the first gate electrode and the second gate electrode;
前記第１の絶縁層上に設けられ、前記第１のゲート電極と重なる領域を有する第１の酸化物半導体層と、A first oxide semiconductor layer provided over the first insulating layer and having a region overlapping with the first gate electrode;
前記第１の絶縁層上に設けられ、前記第２のゲート電極と重なる領域を有する第２の酸化物半導体層と、A second oxide semiconductor layer provided over the first insulating layer and having a region overlapping with the second gate electrode;
前記第１の絶縁層上の第１の配線と、A first wire on the first insulating layer,
前記第１の絶縁層上の第２の配線と、A second wire on the first insulating layer,
前記第１の絶縁層上の第３の配線と、A third wire on the first insulating layer,
前記第１の酸化物半導体層及び前記第２の酸化物半導体層上の有機絶縁層と、An organic insulating layer on the first oxide semiconductor layer and the second oxide semiconductor layer;
を有し、Have
前記第１の酸化物半導体層上に、前記第１の配線及び前記第２の配線を有し、The first wiring and the second wiring are provided over the first oxide semiconductor layer,
前記第２の酸化物半導体層上に、前記第２の配線及び前記第３の配線を有し、The second wiring and the third wiring are provided over the second oxide semiconductor layer,
前記第１の配線は、前記第１の酸化物半導体層に電気的に接続され、The first wiring is electrically connected to the first oxide semiconductor layer,
前記第２の配線は、前記第１の酸化物半導体層及び前記第２の酸化物半導体層に電気的に接続され、The second wiring is electrically connected to the first oxide semiconductor layer and the second oxide semiconductor layer,
前記第３の配線は、前記第２の酸化物半導体層に電気的に接続され、The third wiring is electrically connected to the second oxide semiconductor layer,
前記第３の配線は、前記第１の絶縁層に設けられたコンタクトホールを介して、前記第２のゲート電極に電気的に接続されていることを特徴とする半導体装置。The semiconductor device according to claim 1, wherein the third wiring is electrically connected to the second gate electrode through a contact hole provided in the first insulating layer.
前記第１の酸化物半導体層及び前記第２の酸化物半導体層は、結晶領域を有することを特徴とする半導体装置。A semiconductor device characterized in that the first oxide semiconductor layer and the second oxide semiconductor layer have a crystalline region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009253687A JP5587591B2 (en) | 2008-11-07 | 2009-11-05 | Semiconductor device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008286900 | 2008-11-07 | ||
| JP2008286900 | 2008-11-07 | ||
| JP2009253687A JP5587591B2 (en) | 2008-11-07 | 2009-11-05 | Semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014150498A Division JP2014241424A (en) | 2008-11-07 | 2014-07-24 | Semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010135777A JP2010135777A (en) | 2010-06-17 |
| JP2010135777A5 true JP2010135777A5 (en) | 2012-11-15 |
| JP5587591B2 JP5587591B2 (en) | 2014-09-10 |
Family
ID=42346698
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009253687A Active JP5587591B2 (en) | 2008-11-07 | 2009-11-05 | Semiconductor device |
| JP2014150498A Withdrawn JP2014241424A (en) | 2008-11-07 | 2014-07-24 | Semiconductor device |
| JP2016085315A Expired - Fee Related JP6127182B2 (en) | 2008-11-07 | 2016-04-21 | Semiconductor device |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014150498A Withdrawn JP2014241424A (en) | 2008-11-07 | 2014-07-24 | Semiconductor device |
| JP2016085315A Expired - Fee Related JP6127182B2 (en) | 2008-11-07 | 2016-04-21 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (3) | JP5587591B2 (en) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130030295A (en) * | 2010-07-02 | 2013-03-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and manufacturing method thereof |
| KR101979758B1 (en) * | 2010-08-27 | 2019-05-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Memory device and semiconductor device |
| US8603841B2 (en) | 2010-08-27 | 2013-12-10 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing methods of semiconductor device and light-emitting display device |
| US8766253B2 (en) * | 2010-09-10 | 2014-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US8835917B2 (en) * | 2010-09-13 | 2014-09-16 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, power diode, and rectifier |
| US8841664B2 (en) * | 2011-03-04 | 2014-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9478668B2 (en) | 2011-04-13 | 2016-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor film and semiconductor device |
| US9466618B2 (en) | 2011-05-13 | 2016-10-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including two thin film transistors and method of manufacturing the same |
| KR101976212B1 (en) * | 2011-10-24 | 2019-05-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and method for manufacturing the same |
| JP6110693B2 (en) * | 2012-03-14 | 2017-04-05 | 株式会社半導体エネルギー研究所 | Semiconductor device |
| JP6077382B2 (en) * | 2012-05-11 | 2017-02-08 | 株式会社半導体エネルギー研究所 | Semiconductor device and manufacturing method of semiconductor device |
| JP6063766B2 (en) | 2013-02-20 | 2017-01-18 | 株式会社ジャパンディスプレイ | Semiconductor device |
| TWI742574B (en) * | 2013-05-16 | 2021-10-11 | 日商半導體能源研究所股份有限公司 | Semiconductor device |
| WO2015151337A1 (en) * | 2014-03-31 | 2015-10-08 | 株式会社 東芝 | Thin film transistor, semiconductor device, and thin film transistor manufacturing method |
| JP6596224B2 (en) * | 2014-05-02 | 2019-10-23 | 株式会社半導体エネルギー研究所 | Light emitting device and input / output device |
| US20200194572A1 (en) * | 2016-11-23 | 2020-06-18 | Shenzhen Royole Technologies Co., Ltd. | ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING ARRAY SUBSTRATE (As Amended) |
| JP6878173B2 (en) * | 2017-06-26 | 2021-05-26 | 株式会社ジャパンディスプレイ | Semiconductor device |
| CN112363354B (en) * | 2020-11-02 | 2023-07-25 | 深圳市华星光电半导体显示技术有限公司 | Array substrate and display panel |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04206836A (en) * | 1990-11-30 | 1992-07-28 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| JP3663261B2 (en) * | 1995-10-05 | 2005-06-22 | 株式会社東芝 | Array substrate for display device and manufacturing method thereof |
| JP2001053283A (en) * | 1999-08-12 | 2001-02-23 | Semiconductor Energy Lab Co Ltd | Semiconductor device and its manufacture |
| JP2002184989A (en) * | 2000-12-11 | 2002-06-28 | Matsushita Electric Ind Co Ltd | Liquid crystal image display and manufacturing method of semiconductor device for image display |
| JP4090716B2 (en) * | 2001-09-10 | 2008-05-28 | 雅司 川崎 | Thin film transistor and matrix display device |
| KR100870013B1 (en) * | 2002-08-27 | 2008-11-21 | 삼성전자주식회사 | a thin film transistor array panel and a method for manufacturing the panel |
| JP4255673B2 (en) * | 2002-10-24 | 2009-04-15 | 三菱電機株式会社 | TFT array substrate, transflective liquid crystal display device using the same, and method for manufacturing TFT array substrate |
| US7297977B2 (en) * | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
| JP4869626B2 (en) * | 2004-05-22 | 2012-02-08 | 株式会社半導体エネルギー研究所 | Display device and electronic device |
| JP4801406B2 (en) * | 2004-09-30 | 2011-10-26 | 株式会社半導体エネルギー研究所 | Method for manufacturing liquid crystal display device |
| JP5135709B2 (en) * | 2006-04-28 | 2013-02-06 | 凸版印刷株式会社 | Thin film transistor and manufacturing method thereof |
| JP5364242B2 (en) * | 2006-04-28 | 2013-12-11 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| JP5250944B2 (en) * | 2006-04-28 | 2013-07-31 | 凸版印刷株式会社 | Structure, transmissive liquid crystal display device, semiconductor circuit manufacturing method, and transmissive liquid crystal display device manufacturing method |
| JP4609797B2 (en) * | 2006-08-09 | 2011-01-12 | Ｎｅｃ液晶テクノロジー株式会社 | Thin film device and manufacturing method thereof |
| JP5210594B2 (en) * | 2006-10-31 | 2013-06-12 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device |
| JP5090745B2 (en) * | 2007-01-17 | 2012-12-05 | 株式会社ジャパンディスプレイイースト | Display device and manufacturing method of display device |
| TWI478347B (en) * | 2007-02-09 | 2015-03-21 | Idemitsu Kosan Co | A thin film transistor, a thin film transistor substrate, and an image display device, and an image display device, and a semiconductor device |
| JP5320746B2 (en) * | 2007-03-28 | 2013-10-23 | 凸版印刷株式会社 | Thin film transistor |
| JP2008277326A (en) * | 2007-04-25 | 2008-11-13 | Canon Inc | Amorphous oxide semiconductor, semiconductor device and thin-film transistor |
-
2009
- 2009-11-05 JP JP2009253687A patent/JP5587591B2/en active Active
-
2014
- 2014-07-24 JP JP2014150498A patent/JP2014241424A/en not_active Withdrawn
-
2016
- 2016-04-21 JP JP2016085315A patent/JP6127182B2/en not_active Expired - Fee Related
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