JP2010130006A - 化学気相蒸着装置用サセプタ及び化学気相蒸着装置 - Google Patents
化学気相蒸着装置用サセプタ及び化学気相蒸着装置 Download PDFInfo
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- JP2010130006A JP2010130006A JP2009239206A JP2009239206A JP2010130006A JP 2010130006 A JP2010130006 A JP 2010130006A JP 2009239206 A JP2009239206 A JP 2009239206A JP 2009239206 A JP2009239206 A JP 2009239206A JP 2010130006 A JP2010130006 A JP 2010130006A
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- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 104
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 238000009826 distribution Methods 0.000 claims abstract description 8
- 238000006243 chemical reaction Methods 0.000 claims description 19
- 239000012495 reaction gas Substances 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 10
- 238000007740 vapor deposition Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 238000005137 deposition process Methods 0.000 claims 1
- 239000012071 phase Substances 0.000 claims 1
- 239000012808 vapor phase Substances 0.000 claims 1
- 238000005452 bending Methods 0.000 abstract description 8
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000009828 non-uniform distribution Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
【解決手段】本発明の化学気相蒸着装置用サセプタは、駆動装置と連結された回転軸130を通じて回転する回転体110と、回転体110の上部面に形成され、基板10を載せるポケット120とを含み、ポケット120の底面には、均一な応力分布のために基板10の底面に形成された溝と対応する位置に、上部に突出したブロック部121を備えていることを特徴とする。
【選択図】図1a
Description
Claims (12)
- 駆動装置と連結された回転軸を通じて回転する回転体と、
前記回転体の上部面に少なくとも1つ備えられ、基板を載せるポケットとを含み,
前記基板を載せる前記ポケットの底面には、均一な応力分布のために前記基板の底面に形成された溝と対応する位置に、上部に突出したブロック部を備えていることを特徴とする化学気相蒸着装置用サセプタ。 - 前記ポケットの底面には、前記基板の底面に形成された溝の位置及び数に従って、前記溝と対応する位置に前記溝の数のブロック部を備えていることを特徴とする請求項1に記載の化学気相蒸着装置用サセプタ。
- 前記ブロック部は環状であることを特徴とする請求項1または請求項2に記載の化学気相蒸着装置用サセプタ。
- 前記ブロック部は、複数のブロックが一定間隔で離隔して配置された環状であることを特徴とする請求項1乃至請求項3のいずれか1項に記載の化学気相蒸着装置用サセプタ。
- 前記ポケットは前記回転体から分離された構造であり、前記回転体に対して回転可能に設置されていることを特徴とする請求項1乃至請求項4のいずれか1項に記載の化学気相蒸着装置用サセプタ。
- 前記ポケットは、回転駆動時に内部に載せられた基板が離脱しないように固定する固定クリップをさらに含むことを特徴とする請求項1乃至請求項5のいずれか1項に記載の化学気相蒸着装置用サセプタ。
- 前記ブロック部は、前記溝の形状と対応する形状で形成されて前記溝と結合することを特徴とする請求項1乃至請求項6のいずれか1項に記載の化学気相蒸着装置用サセプタ。
- ガス供給部を通じて反応ガスが供給されて蒸着を可能にする反応チャンバと、
前記反応ガスの供給を受けて上部面にエピタキシャル層が蒸着され、蒸着過程で応力が均一に分布するように底面に溝が形成された基板と、
前記基板を載せたときに前記基板の底面と接触する底面に、前記溝と対応する位置に上部に突出したブロック部を備えているポケットと、
前記ポケットを上部面に備えているサセプタと、
前記サセプタの下部面に設置されて前記基板を加熱する加熱手段と
を含むことを特徴とする化学気相蒸着装置。 - 前記ポケットの底面には、前記基板の底面に形成された溝の位置及び数に従って、前記溝と対応する位置に前記溝の数のブロック部を備えていることを特徴とする請求項8に記載の化学気相蒸着装置。
- 前記ブロック部は環状であるか、あるいは複数のブロックが一定間隔で離隔して配置された環状であることを特徴とする請求項8または請求項9に記載の化学気相蒸着装置。
- 前記ポケットは前記サセプタと分離された構造であり、前記サセプタに対して回転可能に設置されていることを特徴とする請求項8乃至請求項10のいずれか1項に記載の化学気相蒸着装置。
- 前記ブロック部は、前記溝の形状と対応する形状で形成されて前記溝と結合することを特徴とする請求項8乃至請求項11のいずれか1項に記載の化学気相蒸着装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080119185A KR101046068B1 (ko) | 2008-11-27 | 2008-11-27 | 화학 기상 증착 장치용 서셉터 및 이를 구비하는 화학 기상증착 장치 |
KR10-2008-0119185 | 2008-11-27 |
Publications (2)
Publication Number | Publication Date |
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JP2010130006A true JP2010130006A (ja) | 2010-06-10 |
JP5394188B2 JP5394188B2 (ja) | 2014-01-22 |
Family
ID=42195049
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2009239206A Expired - Fee Related JP5394188B2 (ja) | 2008-11-27 | 2009-10-16 | 化学気相蒸着装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20100126419A1 (ja) |
JP (1) | JP5394188B2 (ja) |
KR (1) | KR101046068B1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013168650A (ja) * | 2012-02-16 | 2013-08-29 | Lg Innotek Co Ltd | 半導体製造装置 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101882330B1 (ko) * | 2011-06-21 | 2018-07-27 | 엘지이노텍 주식회사 | 증착 장치 |
US20130239894A1 (en) * | 2012-03-19 | 2013-09-19 | Pinecone Material Inc. | Chemical vapor deposition apparatus |
KR102234386B1 (ko) * | 2013-12-26 | 2021-03-30 | 엘지전자 주식회사 | 서셉터 및 이를 포함하는 화학기상 증착 장치 |
KR102280264B1 (ko) * | 2014-09-15 | 2021-07-22 | 삼성디스플레이 주식회사 | 화학기상증착장치 및 이를 이용한 디스플레이 장치 제조방법 |
JP7321768B2 (ja) | 2018-05-23 | 2023-08-07 | 信越化学工業株式会社 | 化学気相成長装置および被膜形成方法 |
CN110629200B (zh) * | 2019-09-20 | 2020-04-10 | 理想晶延半导体设备(上海)有限公司 | 半导体处理设备 |
CN114761615A (zh) * | 2019-12-20 | 2022-07-15 | 苏州晶湛半导体有限公司 | 一种晶圆承载盘及化学气相淀积设备 |
DE102020105753A1 (de) | 2020-03-04 | 2021-09-09 | Aixtron Se | Auf einer Unterseite mit einer Vielzahl von Strukturelementen versehener Substrathalter für einen CVD-Reaktor |
Citations (4)
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JPH0758040A (ja) * | 1993-08-20 | 1995-03-03 | Toshiba Ceramics Co Ltd | 気相成長装置用サセプタ |
JPH07142557A (ja) * | 1993-11-19 | 1995-06-02 | Sony Corp | 基板固定具 |
JPH11106293A (ja) * | 1997-10-03 | 1999-04-20 | Super Silicon Kenkyusho:Kk | エピタキシャルウエハ製造方法及び装置 |
JP2004055636A (ja) * | 2002-07-17 | 2004-02-19 | Sumitomo Chem Co Ltd | 気相成長装置 |
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JPS5478971A (en) * | 1977-12-06 | 1979-06-23 | Mitsubishi Electric Corp | Semiconductor element |
FR2628984B1 (fr) * | 1988-03-22 | 1990-12-28 | Labo Electronique Physique | Reacteur d'epitaxie a planetaire |
US5226383A (en) * | 1992-03-12 | 1993-07-13 | Bell Communications Research, Inc. | Gas foil rotating substrate holder |
DE10055182A1 (de) * | 2000-11-08 | 2002-05-29 | Aixtron Ag | CVD-Reaktor mit von einem Gasstrom drehgelagerten und -angetriebenen Substrathalter |
JP2004128019A (ja) * | 2002-09-30 | 2004-04-22 | Applied Materials Inc | プラズマ処理方法及び装置 |
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US20050217585A1 (en) * | 2004-04-01 | 2005-10-06 | Blomiley Eric R | Substrate susceptor for receiving a substrate to be deposited upon |
KR100703087B1 (ko) * | 2005-08-08 | 2007-04-06 | 삼성전기주식회사 | 다중 기판의 화학 기상 증착 장치 |
US20070266945A1 (en) * | 2006-05-16 | 2007-11-22 | Asm Japan K.K. | Plasma cvd apparatus equipped with plasma blocking insulation plate |
KR100835073B1 (ko) * | 2007-01-31 | 2008-06-03 | 삼성전기주식회사 | 화학 기상 증착 장치용 서셉터 |
-
2008
- 2008-11-27 KR KR1020080119185A patent/KR101046068B1/ko not_active IP Right Cessation
-
2009
- 2009-10-08 US US12/575,841 patent/US20100126419A1/en not_active Abandoned
- 2009-10-16 JP JP2009239206A patent/JP5394188B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0758040A (ja) * | 1993-08-20 | 1995-03-03 | Toshiba Ceramics Co Ltd | 気相成長装置用サセプタ |
JPH07142557A (ja) * | 1993-11-19 | 1995-06-02 | Sony Corp | 基板固定具 |
JPH11106293A (ja) * | 1997-10-03 | 1999-04-20 | Super Silicon Kenkyusho:Kk | エピタキシャルウエハ製造方法及び装置 |
JP2004055636A (ja) * | 2002-07-17 | 2004-02-19 | Sumitomo Chem Co Ltd | 気相成長装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013168650A (ja) * | 2012-02-16 | 2013-08-29 | Lg Innotek Co Ltd | 半導体製造装置 |
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KR101046068B1 (ko) | 2011-07-01 |
US20100126419A1 (en) | 2010-05-27 |
JP5394188B2 (ja) | 2014-01-22 |
KR20100060553A (ko) | 2010-06-07 |
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