JPS5478971A - Semiconductor element - Google Patents

Semiconductor element

Info

Publication number
JPS5478971A
JPS5478971A JP14669077A JP14669077A JPS5478971A JP S5478971 A JPS5478971 A JP S5478971A JP 14669077 A JP14669077 A JP 14669077A JP 14669077 A JP14669077 A JP 14669077A JP S5478971 A JPS5478971 A JP S5478971A
Authority
JP
Japan
Prior art keywords
semiconductor substrate
grooves
metal plate
solder material
support metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14669077A
Other languages
Japanese (ja)
Inventor
Mitsuo Odate
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP14669077A priority Critical patent/JPS5478971A/en
Publication of JPS5478971A publication Critical patent/JPS5478971A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To reduce the bending of semiconductor element and to increase the yield rate and reliability, by forming a number of grooves on the surface in contact with the semiconductor substrate of the support metal plate supporting the semiconductor substrate and fixing them with the solder material.
CONSTITUTION: On the surface in contact with the semiconductor substrate 1 with the support metal plate 4, a number of grooves 5 of square shape are concentricly formed. The solder material 2 is entered to the grooves and the semiconductor substrate 1 and the support metal plate 4 are soldered. With this construction, with the bimetal operation due to the difference of the thermal expansion rate slightly between the substrate 1 and the metal plate 4, even if bending is taken place, the stress to the substrate 1 is absorbed with the distortion of the part of the circumference of the grooves 5 of the metal plate 4 and further, it is absorbed in the layer of the solder material 2. Since the stress is dispersed to the semiconductor substrate 1, support metal 4 and the layer of solder material 2, the force acting as the distortion to the crystal lattice of the semiconductor substrate is extremely slight. The grooves can be formed in link, lattice, sectionally triangle and wave shape.
COPYRIGHT: (C)1979,JPO&Japio
JP14669077A 1977-12-06 1977-12-06 Semiconductor element Pending JPS5478971A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14669077A JPS5478971A (en) 1977-12-06 1977-12-06 Semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14669077A JPS5478971A (en) 1977-12-06 1977-12-06 Semiconductor element

Publications (1)

Publication Number Publication Date
JPS5478971A true JPS5478971A (en) 1979-06-23

Family

ID=15413360

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14669077A Pending JPS5478971A (en) 1977-12-06 1977-12-06 Semiconductor element

Country Status (1)

Country Link
JP (1) JPS5478971A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100126419A1 (en) * 2008-11-27 2010-05-27 Samsung Led Co., Ltd. Susceptor for cvd apparatus and cvd apparatus including the same
JP2015144228A (en) * 2013-12-24 2015-08-06 アイシン精機株式会社 semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100126419A1 (en) * 2008-11-27 2010-05-27 Samsung Led Co., Ltd. Susceptor for cvd apparatus and cvd apparatus including the same
JP2015144228A (en) * 2013-12-24 2015-08-06 アイシン精機株式会社 semiconductor device

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