JPS54115071A - Semiconductor element - Google Patents
Semiconductor elementInfo
- Publication number
- JPS54115071A JPS54115071A JP2326078A JP2326078A JPS54115071A JP S54115071 A JPS54115071 A JP S54115071A JP 2326078 A JP2326078 A JP 2326078A JP 2326078 A JP2326078 A JP 2326078A JP S54115071 A JPS54115071 A JP S54115071A
- Authority
- JP
- Japan
- Prior art keywords
- support
- electrode members
- soldered
- laminated
- thermal expansion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Die Bonding (AREA)
Abstract
PURPOSE: To prevent the warping due to alloy solder, by correcting the deformation to heat through the lamination of three types electrode members having different thermal expansion coefficient, as the manufacture of semiconductor elements.
CONSTITUTION: Three discs of first, second, third electrode members 101,102, 103 are laminated so that the aluminum foils 104 and 105 being the solder material can be clipped, high temperature treatment is made, establishing the electrode support 106. Taking that the thermal expansion coefficient for the first, second, and third electrode members is as a1,a2,a3, the substance as a1<a2 and a2>a3 is selected. When soldering and returned to room temperature, the bending stress caused to the bonding parts 107 and 108, R1 and R2 are taken as R1<R2, so that the support 106 is bent by W1. Next, the wafer 109 having junction and the support 106 are laminated by clipping the aluminum foil 110, so that the concave plane 111 is soldered plane, and it is alloy-soldered by exerting the pressure P.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2326078A JPS54115071A (en) | 1978-02-28 | 1978-02-28 | Semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2326078A JPS54115071A (en) | 1978-02-28 | 1978-02-28 | Semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54115071A true JPS54115071A (en) | 1979-09-07 |
Family
ID=12105622
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2326078A Pending JPS54115071A (en) | 1978-02-28 | 1978-02-28 | Semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54115071A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007216844A (en) * | 2006-02-17 | 2007-08-30 | Tcm Corp | Transportation vehicle |
CN107731668A (en) * | 2017-08-31 | 2018-02-23 | 长江存储科技有限责任公司 | The method that wafer stress is compensated in the hybrid bonded techniques of 3D NAND |
-
1978
- 1978-02-28 JP JP2326078A patent/JPS54115071A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007216844A (en) * | 2006-02-17 | 2007-08-30 | Tcm Corp | Transportation vehicle |
CN107731668A (en) * | 2017-08-31 | 2018-02-23 | 长江存储科技有限责任公司 | The method that wafer stress is compensated in the hybrid bonded techniques of 3D NAND |
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