JP2010118663A - 増幅光ファイバおよび製造方法 - Google Patents
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Abstract
【解決手段】本発明は、中心コアと、中心コアを取り巻く光クラッドとを有する増幅光ファイバに関し、中心コアは、少なくとも1種類の希土類元素のドーピングイオンを含むマトリックス材料から成るナノ粒子を含むシリカマトリックスをベースとする。ナノ粒子のマトリックスは、希土類の溶解と分散を助けるように、また増幅プロセスを助けるように選択される。さらに、本発明は、本願の光ファイバを含む光増幅器および光レーザに関する。さらに、本発明は、ナノ粒子を調製する方法および本願の光ファイバを製造する方法、ならびに前記光ファイバの使用に関する。
【選択図】図2a
Description
a)希土類元素の少なくとも1種類のイオンを含む、少なくとも1種類の化合物を提供するステップ、
b)ナノ粒子のマトリックス材料を形成するための、少なくとも1種類のイオンを含む少なくとも1種類の化合物を提供するステップ、
c)ナノ粒子の懸濁液を得るために、ステップa)およびステップb)にて得られた化合物を、3−12の範囲、好ましくは6から10の間のpHを有する水溶液の中に、攪拌しながら加えるステップ。
1)少なくとも1種類の希土類元素のドーピングイオンを含むマトリックス材料から成るナノ粒子の懸濁液を調製するステップ、
2)化学蒸着(CVD)プロセスにより調製された、多孔質の内層を有する中空のシリカベースのチューブを供給するステップ、
3)ステップ2)で得られた中空チューブの多孔性の内層に、ステップ1)で得られた懸濁液を含浸(impregnating)するステップ、
4)残留水分を除去し、ナノ粒子を強化するために、ステップd)で得られたドープされた多孔質の内層に熱を加えるステップ、
5)光プリフォームを得るために、ステップ4)で得られた中空チューブをガラス化し、壊すステップ、
6)修正された、光クラッド径に対する中心コア径の比を有する光プリフォームを得るために、ステップ5)で得られた光プリフォームを、任意選択でスリービングまたはオーバークラッディングするステップ、
7)中心コアと、中心コアを取り巻く光クラッドとを有する光ファイバを得るために、ステップ5)またはステップ6)で得られた光プリフォームを引き抜くステップであって、セントラルコアは、少なくとも1種類の希土類元素のドーピングイオンを含むマトリックス材料から成るナノ粒子を含むシリカマトリックスをベースとし、イオン濃度は、中心コアの全重量の約0.01重量%と約1重量%の間、好ましくは約0.01重量%と約0.2重量%の間であり、イオン間の平均距離は少なくとも0.4ナノメートルとなるべきである、ステップ。
C−バンドにおける高効率増幅のためのエルビウムドープ光ファイバが、以下の方法により得られる。
A(E) 吸収(励起)
PL ポンプ準位
AL 増幅準位
OIS 光入力信号
RE(D) 放射線放出すなわち脱励起
OUS 光出力信号
NRD 非放射脱励起
ETU エネルギー移動上位変換
PCE ポンプ閉じ込め効率またはポンプ変換効率
Claims (20)
- 中心コアと、中心コアを取り巻く光クラッドとを有し、中心コアが、少なくとも1種類の希土類元素のドーピングイオンを含むマトリックス材料から成るナノ粒子を含むシリカマトリックスをベースとする、増幅光ファイバであって、ドーピングイオンの濃度が、中心コアの全重量の約0.01重量%と約1重量%の間、好ましくは約0.01重量%と0.2重量%の間であり、ナノ粒子の中のドーピングイオン間の平均距離が、少なくとも0.4ナノメートルであり、平均距離が、ナノ粒子内部の各組の2つのドーピングイオンの間の距離の平均であることを特徴とする、増幅光ファイバ。
- ナノ粒子の中のドーピングイオンの濃度が、ナノ粒子の全重量の0.1から20重量%の間、好ましくは0.5から15重量%の間である、請求項1に記載の増幅光ファイバ。
- ナノ粒子のマトリックス材料が、ポンピング中の希土類元素の、増幅準位と基底状態準位の間のエネルギーギャップの20%未満、より好ましくはエネルギーギャップの15%未満であるフォノンエネルギーを有する、請求項1または2に記載の増幅光ファイバ。
- ナノ粒子のマトリックス材料が、ポンピング中の希土類元素の、ポンプ準位と増幅準位の間のエネルギーギャップの少なくとも25%、ポンピング中の希土類元素の、増幅準位と基底状態準位の間のエネルギーギャップの、最大限で22%、好ましくは18.5%のフォノンエネルギーを有する、請求項1から3のいずれか一項に記載の増幅光ファイバ。
- ナノ粒子のマトリックス材料が非晶質である、請求項1から4のいずれか一項に記載の増幅光ファイバ。
- ナノ粒子のマトリックス材料が、酸化アルミニウム(Al2O3)、酸化リン(P2O5)、またはそれらの組合せである、請求項1から5のいずれか一項に記載の増幅光ファイバ。
- 中心コアのシリカベースのマトリックスが、ゲルマニウム、リン、フッ化物、ホウ素、およびそれらの1つまたは複数の組合せから成る群から選択される少なくとも1種類の元素でドープされる、請求項1から6のいずれか一項に記載の増幅光ファイバ。
- 中心コアの中の酸化アルミニウムの全濃度が、中心コアの全重量を基準として4重量%以下、好ましくは3.5重量%以下である、請求項1から7のいずれか一項に記載の増幅光ファイバ。
- 希土類元素が、エルビウム、イッテルビウム、ツリウム、およびこれらの元素の組合せ、好ましくはエルビウムとイッテルビウムとの組合せから成る群から選択される、請求項1から8のいずれか一項に記載の増幅光ファイバ。
- 光ファイバが、1200nmにおいて4dB/km以下、好ましくは1200nmにおいて2dB/km以下のバックグランド減衰損失を有する、請求項1から9のいずれか一項に記載の増幅光ファイバ。
- ナノ粒子のサイズが、100nm以下、好ましくは50nm以下、より好ましくは20nm以下である、請求項1から10のいずれか一項に記載の増幅光ファイバ。
- 光増幅器または光レーザにおける、請求項1から11のいずれか一項に記載の増幅光ファイバの使用。
- 特定の利得形状の中でファイバの効率を改善するための、請求項1から12のいずれか一項に記載の増幅光ファイバの使用。
- 請求項1から11のいずれか一項に記載の増幅光ファイバの少なくとも1本を含む、光増幅器。
- 請求項1から11のいずれか一項に記載のファイバの少なくとも一部を含む、光レーザ。
- 少なくとも1種類の希土類元素のドーピングイオンを含むマトリックス材料から成るナノ粒子の懸濁液を調製する方法であって、
a)少なくとも1種類の希土類元素のイオンを含む少なくとも1種類の化合物を供給するステップと、
b)ナノ粒子のマトリックス材料を形成するための少なくとも1種類のイオンを含む少なくとも1種類の化合物を供給するステップと、
c)ナノ粒子の懸濁液を得るために、ステップa)およびステップb)で得られた化合物を、3−12の範囲内、好ましくは6−10の範囲内のpHを有する水溶液に攪拌しながら加えるステップとを含む、方法。 - ステップa)の中の少なくとも1種類の化合物が、エルビウム塩、好ましくは酢酸エルビウム、硝酸エルビウム、エルビウムアセチルアセトナート、塩化エルビウム、およびそれらの1つまたは複数の組合せから成る群から選択される、請求項16に記載のナノ粒子の懸濁液を調製する方法。
- ステップb)の中の少なくとも1種類の化合物が、アルミニウム塩およびリン塩、またはそれらの組合せから成る群から、好ましくは硝酸アルミニウムおよび燐トリクロライドオキシド、ならびにそれらの組合せから成る群から選択される、請求項16または17に記載のナノ粒子の懸濁液を調製する方法。
- ステップc)が、10℃と50℃の間、好ましくは20℃と40℃の間の温度で実施される、請求項16から18のいずれか一項に記載のナノ粒子の懸濁液を調製する方法。
- 1)少なくとも1種類の希土類元素のドーピングイオンを含むマトリックス材料から成るナノ粒子の懸濁液を調製するステップと、
2)化学蒸着(CVD)プロセスにより調製された多孔質の内層を有するシリカベースの中空チューブを供給するステップと、
3)ステップ2)で得られた中空チューブの多孔質の内層を、ステップ1)で得られた懸濁液で含浸するステップと、
4)残留水分を除去し、ナノ粒子を強化するために、ステップ3)で得られたドープされた多孔質の内層に熱を加えるステップと、
5)光プリフォームを得るために、ステップ4)で得られた中空チューブをガラス化し、壊すステップと、
6)修正された、光クラッド径に対する中心コア径の比を有する光プリフォームを得るために、ステップ5)で得られた光プリフォームを、任意選択でスリービングまたはオーバークラッディングするステップと、
7)中心コアと、中心コアを取り巻く光クラッドとを有する光ファイバを得るために、ステップ5)またはステップ6)で得られた光プリフォームを引き抜くステップであって、セントラルコアが、少なくとも1種類の希土類元素のドーピングイオンを含むマトリックス材料から成るナノ粒子を含むシリカマトリックスをベースとし、イオンの濃度が、中心コアの全重量の約0.01重量%と約1重量%の間、好ましくは約0.01重量%と約0.2重量%の間であり、イオン間の平均距離が、少なくとも0.4ナノメートルとなるべきである、ステップと
を含む、請求項1から11のいずれかに記載の増幅光ファイバを製造する方法。
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- 2008-11-12 ES ES08291059.7T patent/ES2487443T3/es active Active
- 2008-11-12 DK DK08291059.7T patent/DK2187486T3/da active
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2009
- 2009-11-12 JP JP2009258759A patent/JP5670043B2/ja not_active Expired - Fee Related
- 2009-11-12 CN CN200910208378A patent/CN101782667A/zh active Pending
- 2009-11-12 US US12/617,316 patent/US8259389B2/en not_active Expired - Fee Related
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Also Published As
Publication number | Publication date |
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KR20100053477A (ko) | 2010-05-20 |
DK2187486T3 (da) | 2014-07-07 |
EP2187486B1 (en) | 2014-04-23 |
US8259389B2 (en) | 2012-09-04 |
EP2565997A2 (en) | 2013-03-06 |
JP5670043B2 (ja) | 2015-02-18 |
EP2187486A1 (en) | 2010-05-19 |
EP2565997A3 (en) | 2013-06-19 |
ES2487443T3 (es) | 2014-08-20 |
CN101782667A (zh) | 2010-07-21 |
US20100118388A1 (en) | 2010-05-13 |
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