JP2010112966A - 被膜形成用塗布液及びその製造方法並びに半導体装置の製造方法 - Google Patents

被膜形成用塗布液及びその製造方法並びに半導体装置の製造方法 Download PDF

Info

Publication number
JP2010112966A
JP2010112966A JP2007058646A JP2007058646A JP2010112966A JP 2010112966 A JP2010112966 A JP 2010112966A JP 2007058646 A JP2007058646 A JP 2007058646A JP 2007058646 A JP2007058646 A JP 2007058646A JP 2010112966 A JP2010112966 A JP 2010112966A
Authority
JP
Japan
Prior art keywords
group
film
organic solvent
forming
cis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007058646A
Other languages
English (en)
Japanese (ja)
Inventor
Makoto Nakajima
誠 中島
Koji Sakaida
康志 境田
Hikari Imamura
光 今村
Satoshi Takei
敏 竹井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nissan Chemical Corp
Original Assignee
Nissan Chemical Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Corp filed Critical Nissan Chemical Corp
Priority to JP2007058646A priority Critical patent/JP2010112966A/ja
Priority to PCT/JP2008/053971 priority patent/WO2008111463A1/fr
Priority to TW097108137A priority patent/TW200903173A/zh
Publication of JP2010112966A publication Critical patent/JP2010112966A/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/24—Electrically-conducting paints
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Structural Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Architecture (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Paints Or Removers (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Formation Of Insulating Films (AREA)
JP2007058646A 2007-03-08 2007-03-08 被膜形成用塗布液及びその製造方法並びに半導体装置の製造方法 Pending JP2010112966A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2007058646A JP2010112966A (ja) 2007-03-08 2007-03-08 被膜形成用塗布液及びその製造方法並びに半導体装置の製造方法
PCT/JP2008/053971 WO2008111463A1 (fr) 2007-03-08 2008-03-05 Solution de revêtement pour la formation d'un film, procédé de fabrication de la solution de revêtement et procédé de fabrication d'un dispositif semi-conducteur
TW097108137A TW200903173A (en) 2007-03-08 2008-03-07 Application liquid for forming coating, production process thereof and production process of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007058646A JP2010112966A (ja) 2007-03-08 2007-03-08 被膜形成用塗布液及びその製造方法並びに半導体装置の製造方法

Publications (1)

Publication Number Publication Date
JP2010112966A true JP2010112966A (ja) 2010-05-20

Family

ID=39759406

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007058646A Pending JP2010112966A (ja) 2007-03-08 2007-03-08 被膜形成用塗布液及びその製造方法並びに半導体装置の製造方法

Country Status (3)

Country Link
JP (1) JP2010112966A (fr)
TW (1) TW200903173A (fr)
WO (1) WO2008111463A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012053600A1 (fr) * 2010-10-22 2012-04-26 日産化学工業株式会社 Composition de formation d'un film de sous-couche de réserve contenant du silicium et un additif contenant du fluor
JP2013119626A (ja) * 2011-12-07 2013-06-17 Wacker Chemie Ag 高分子量シリコーン樹脂の製造
KR20180101327A (ko) 2016-01-12 2018-09-12 도오레 화인케미칼 가부시키가이샤 실리콘 중합체의 제조방법

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110013148A (ko) * 2009-07-31 2011-02-09 주식회사 에이피엠 피막 형성용 도포 조성물 및 그 조성물이 도포되는 피막
WO2014097993A1 (fr) * 2012-12-18 2014-06-26 日産化学工業株式会社 Composition de formation de film de couche de fond d'un film à auto-organisation contenant un composé vinylique organique polycyclique
US9690192B2 (en) * 2014-04-21 2017-06-27 Jsr Corporation Composition for base, and directed self-assembly lithography method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62269140A (ja) * 1986-05-16 1987-11-21 Matsushita Electric Ind Co Ltd パタ−ン形成方法
JP4700929B2 (ja) * 2003-06-03 2011-06-15 信越化学工業株式会社 反射防止膜材料、これを用いた反射防止膜及びパターン形成方法
JP4780323B2 (ja) * 2005-11-21 2011-09-28 信越化学工業株式会社 エッチングマスク用ケイ素含有膜形成用組成物、エッチングマスク用ケイ素含有膜、及び、これを用いた基板加工中間体及び被加工基板の加工方法
JP2007279135A (ja) * 2006-04-03 2007-10-25 Tokyo Ohka Kogyo Co Ltd レジスト下層膜用組成物及びこれを用いたレジスト下層膜

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012053600A1 (fr) * 2010-10-22 2012-04-26 日産化学工業株式会社 Composition de formation d'un film de sous-couche de réserve contenant du silicium et un additif contenant du fluor
US8877425B2 (en) 2010-10-22 2014-11-04 Nissan Chemical Industries, Ltd. Silicon-containing resist underlayer film forming composition having fluorine-based additive
JP5939399B2 (ja) * 2010-10-22 2016-06-22 日産化学工業株式会社 フッ素系添加剤を有するシリコン含有レジスト下層膜形成組成物
JP2013119626A (ja) * 2011-12-07 2013-06-17 Wacker Chemie Ag 高分子量シリコーン樹脂の製造
US8748554B2 (en) 2011-12-07 2014-06-10 Wacker Chemie Ag Production of high-molecular-weight silicone resins
KR20180101327A (ko) 2016-01-12 2018-09-12 도오레 화인케미칼 가부시키가이샤 실리콘 중합체의 제조방법
US10647821B2 (en) 2016-01-12 2020-05-12 Toray Fine Chemicals Co., Ltd. Production process for silicone polymer

Also Published As

Publication number Publication date
WO2008111463A1 (fr) 2008-09-18
TW200903173A (en) 2009-01-16

Similar Documents

Publication Publication Date Title
JP4688882B2 (ja) 反射防止膜の形成方法、レジスト画像の形成方法、パターンの形成方法及び電子デバイスの製造方法
EP2121857B1 (fr) Composition de revêtement à base de silicone
CN101371196B (zh) 抗反射涂料
JP5282920B2 (ja) パターン反転膜形成用組成物及び反転パターン形成方法
EP2250213B1 (fr) Résines silsesquioxane
JP5632387B2 (ja) 湿式エッチング可能な反射防止膜
EP1825330B1 (fr) Procede pour former un revetement anti-reflechissant
JP5798102B2 (ja) ケイ素含有レジスト下層膜形成用組成物及びパターン形成方法
JP4825811B2 (ja) 反射防止膜の形成方法、レジスト画像の形成方法、パターンの形成方法及び電子デバイスの製造方法
US8241707B2 (en) Silsesquioxane resins
WO2007088908A1 (fr) Film de silice organique et son procede de formation, composition pour former un film isolant d'un dispositif semi-conducteur et son procede de production, structure de cable et dispositif semi-conducteur
KR20070085174A (ko) 리소그래피 공정용 탑 코트
JP7269503B2 (ja) 珪素含有層形成組成物およびそれを用いたパターン付き基板の製造方法
JP2010112966A (ja) 被膜形成用塗布液及びその製造方法並びに半導体装置の製造方法
JP2013228702A (ja) レジスト下層膜形成用組成物及びパターン形成方法
JP2009237363A (ja) レジスト下層膜用組成物及びその製造方法
US8653217B2 (en) Method for forming anti-reflective coating
TWI849203B (zh) 皮膜形成用組成物、塗佈該皮膜形成用組成物而成之積層體、使用該積層體而成之觸控面板、及硬化皮膜之形成方法
WO2021187324A1 (fr) Composition de résine photosensible négative, structure de motifs et procédé de production de film durci à motifs
JP2009229708A (ja) レジスト下層膜用組成物及びその製造方法
JPWO2021187324A5 (fr)
KR20230160168A (ko) 폴리실록산계 화합물, 피막 형성용 조성물, 적층체, 터치 패널, 및 경화 피막의 형성 방법
KR20230160169A (ko) 폴리실록산계 조성물, 피막 형성용 조성물, 적층체, 터치 패널, 및 경화 피막의 형성 방법
CN116500864A (zh) 组合的ARC和Si硬掩模的组合物