WO2008111463A1 - Solution de revêtement pour la formation d'un film, procédé de fabrication de la solution de revêtement et procédé de fabrication d'un dispositif semi-conducteur - Google Patents

Solution de revêtement pour la formation d'un film, procédé de fabrication de la solution de revêtement et procédé de fabrication d'un dispositif semi-conducteur Download PDF

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Publication number
WO2008111463A1
WO2008111463A1 PCT/JP2008/053971 JP2008053971W WO2008111463A1 WO 2008111463 A1 WO2008111463 A1 WO 2008111463A1 JP 2008053971 W JP2008053971 W JP 2008053971W WO 2008111463 A1 WO2008111463 A1 WO 2008111463A1
Authority
WO
WIPO (PCT)
Prior art keywords
coating solution
production
film formation
semiconductor device
cis
Prior art date
Application number
PCT/JP2008/053971
Other languages
English (en)
Japanese (ja)
Inventor
Makoto Nakajima
Yasushi Sakaida
Hikaru Imamura
Satoshi Takei
Original Assignee
Nissan Chemical Industries, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Industries, Ltd. filed Critical Nissan Chemical Industries, Ltd.
Publication of WO2008111463A1 publication Critical patent/WO2008111463A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/24—Electrically-conducting paints
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Materials Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Polymers (AREA)

Abstract

L'invention vise à améliorer la stabilité au stockage d'une solution de revêtement contenant un siloxane polymère pour la formation d'un film, laquelle solution a une aptitude au durcissement élevée mais a une stabilité au stockage médiocre à la température ambiante. A cet effet, l'invention concerne une solution de revêtement pour la formation d'un film, qui comprend un polymère ayant une liaison Si-O-Si et un groupe silanol, un solvant organique représenté par la formule : R1(OCH2CHCH3)nOCOCH3 [dans laquelle R1 représente un groupe alkyle ayant 1 à 4 atomes de carbone ; et n représente un nombre de 1 ou 2], un solvant organique qui peut dissoudre dans celui-ci un acide carboxylique bivalent de type cis (acide dicarboxylique), et un acide carboxylique bivalent de type cis (acide dicarboxylique).
PCT/JP2008/053971 2007-03-08 2008-03-05 Solution de revêtement pour la formation d'un film, procédé de fabrication de la solution de revêtement et procédé de fabrication d'un dispositif semi-conducteur WO2008111463A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007058646A JP2010112966A (ja) 2007-03-08 2007-03-08 被膜形成用塗布液及びその製造方法並びに半導体装置の製造方法
JP2007-058646 2007-03-08

Publications (1)

Publication Number Publication Date
WO2008111463A1 true WO2008111463A1 (fr) 2008-09-18

Family

ID=39759406

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/053971 WO2008111463A1 (fr) 2007-03-08 2008-03-05 Solution de revêtement pour la formation d'un film, procédé de fabrication de la solution de revêtement et procédé de fabrication d'un dispositif semi-conducteur

Country Status (3)

Country Link
JP (1) JP2010112966A (fr)
TW (1) TW200903173A (fr)
WO (1) WO2008111463A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012532981A (ja) * 2009-07-31 2012-12-20 エーピーエム インコーポレイテッド 皮膜形成用組成物及びその組成物が塗布される皮膜
WO2014097993A1 (fr) * 2012-12-18 2014-06-26 日産化学工業株式会社 Composition de formation de film de couche de fond d'un film à auto-organisation contenant un composé vinylique organique polycyclique
JP2015216368A (ja) * 2014-04-21 2015-12-03 Jsr株式会社 下地用組成物及び自己組織化リソグラフィープロセス
KR101833208B1 (ko) 2010-10-22 2018-04-13 닛산 가가쿠 고교 가부시키 가이샤 플루오르계 첨가제를 갖는 실리콘 함유 레지스트 하층막 형성 조성물

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011087931A1 (de) * 2011-12-07 2013-06-13 Wacker Chemie Ag Herstellung hochmolekularer Siliconharze
CN108473684B (zh) 2016-01-12 2023-05-12 东丽精细化工株式会社 硅氧烷聚合物的制造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62269140A (ja) * 1986-05-16 1987-11-21 Matsushita Electric Ind Co Ltd パタ−ン形成方法
JP2005015779A (ja) * 2003-06-03 2005-01-20 Shin Etsu Chem Co Ltd 反射防止膜材料、これを用いた反射防止膜及びパターン形成方法
JP2007164148A (ja) * 2005-11-21 2007-06-28 Shin Etsu Chem Co Ltd エッチングマスク用ケイ素含有膜形成用組成物、エッチングマスク用ケイ素含有膜、及び、これを用いた基板加工中間体及び被加工基板の加工方法
JP2007279135A (ja) * 2006-04-03 2007-10-25 Tokyo Ohka Kogyo Co Ltd レジスト下層膜用組成物及びこれを用いたレジスト下層膜

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62269140A (ja) * 1986-05-16 1987-11-21 Matsushita Electric Ind Co Ltd パタ−ン形成方法
JP2005015779A (ja) * 2003-06-03 2005-01-20 Shin Etsu Chem Co Ltd 反射防止膜材料、これを用いた反射防止膜及びパターン形成方法
JP2007164148A (ja) * 2005-11-21 2007-06-28 Shin Etsu Chem Co Ltd エッチングマスク用ケイ素含有膜形成用組成物、エッチングマスク用ケイ素含有膜、及び、これを用いた基板加工中間体及び被加工基板の加工方法
JP2007279135A (ja) * 2006-04-03 2007-10-25 Tokyo Ohka Kogyo Co Ltd レジスト下層膜用組成物及びこれを用いたレジスト下層膜

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012532981A (ja) * 2009-07-31 2012-12-20 エーピーエム インコーポレイテッド 皮膜形成用組成物及びその組成物が塗布される皮膜
KR101833208B1 (ko) 2010-10-22 2018-04-13 닛산 가가쿠 고교 가부시키 가이샤 플루오르계 첨가제를 갖는 실리콘 함유 레지스트 하층막 형성 조성물
WO2014097993A1 (fr) * 2012-12-18 2014-06-26 日産化学工業株式会社 Composition de formation de film de couche de fond d'un film à auto-organisation contenant un composé vinylique organique polycyclique
JPWO2014097993A1 (ja) * 2012-12-18 2017-01-12 日産化学工業株式会社 多環芳香族ビニル化合物を含む自己組織化膜の下層膜形成組成物
US10508181B2 (en) 2012-12-18 2019-12-17 Nissan Chemical Industries, Ltd. Bottom layer film-formation composition of self-organizing film containing polycyclic organic vinyl compound
JP2015216368A (ja) * 2014-04-21 2015-12-03 Jsr株式会社 下地用組成物及び自己組織化リソグラフィープロセス

Also Published As

Publication number Publication date
JP2010112966A (ja) 2010-05-20
TW200903173A (en) 2009-01-16

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