JP2010111888A - Ｔｉ膜の成膜方法および成膜装置、ならびに記憶媒体 - Google Patents

Ｔｉ膜の成膜方法および成膜装置、ならびに記憶媒体 Download PDF

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Publication number
JP2010111888A
JP2010111888A JP2008283373A JP2008283373A JP2010111888A JP 2010111888 A JP2010111888 A JP 2010111888A JP 2008283373 A JP2008283373 A JP 2008283373A JP 2008283373 A JP2008283373 A JP 2008283373A JP 2010111888 A JP2010111888 A JP 2010111888A
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gas
ticl
film
flow rate
plasma
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JP2008283373A
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Japanese (ja)
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JP2010111888A5 (https=
Inventor
Hideaki Yamazaki
英亮 山▲崎▼
Kensaku Narishima
健索 成嶋
Mayuko Ishikawa
麻由子 石川
Satoru Yoshimitsu
哲 善光
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2008283373A priority Critical patent/JP2010111888A/ja
Publication of JP2010111888A publication Critical patent/JP2010111888A/ja
Publication of JP2010111888A5 publication Critical patent/JP2010111888A5/ja
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JP2008283373A 2008-11-04 2008-11-04 Ｔｉ膜の成膜方法および成膜装置、ならびに記憶媒体 Pending JP2010111888A (ja)

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JP2008283373A JP2010111888A (ja) 2008-11-04 2008-11-04 Ｔｉ膜の成膜方法および成膜装置、ならびに記憶媒体

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JP2008283373A JP2010111888A (ja) 2008-11-04 2008-11-04 Ｔｉ膜の成膜方法および成膜装置、ならびに記憶媒体

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JP2010111888A true JP2010111888A (ja) 2010-05-20
JP2010111888A5 JP2010111888A5 (https=) 2011-10-20

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017022302A (ja) * 2015-07-14 2017-01-26 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
JP2018137369A (ja) * 2017-02-22 2018-08-30 東京エレクトロン株式会社 成膜方法及び成膜装置
KR20240058202A (ko) 2021-10-05 2024-05-03 도쿄엘렉트론가부시키가이샤 티탄 막을 형성하는 방법 및 티탄 막을 형성하는 장치

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10298768A (ja) * 1997-01-24 1998-11-10 Applied Materials Inc チタン層を堆積するための、高温、高堆積率の方法及び装置
JP2000200761A (ja) * 1999-01-07 2000-07-18 Nec Corp 半導体装置の製造方法
JP2004158828A (ja) * 2002-10-17 2004-06-03 Tokyo Electron Ltd 成膜方法
JP2005064017A (ja) * 2003-08-11 2005-03-10 Tokyo Electron Ltd プラズマ処理方法及び成膜方法
JP2007211326A (ja) * 2006-02-13 2007-08-23 Nec Electronics Corp 成膜装置および成膜方法
WO2007125836A1 (ja) * 2006-04-24 2007-11-08 Tokyo Electron Limited Ｔｉ膜の成膜方法
JP2008202107A (ja) * 2007-02-21 2008-09-04 Hitachi Kokusai Electric Inc 基板処理装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10298768A (ja) * 1997-01-24 1998-11-10 Applied Materials Inc チタン層を堆積するための、高温、高堆積率の方法及び装置
JP2000200761A (ja) * 1999-01-07 2000-07-18 Nec Corp 半導体装置の製造方法
JP2004158828A (ja) * 2002-10-17 2004-06-03 Tokyo Electron Ltd 成膜方法
JP2005064017A (ja) * 2003-08-11 2005-03-10 Tokyo Electron Ltd プラズマ処理方法及び成膜方法
JP2007211326A (ja) * 2006-02-13 2007-08-23 Nec Electronics Corp 成膜装置および成膜方法
WO2007125836A1 (ja) * 2006-04-24 2007-11-08 Tokyo Electron Limited Ｔｉ膜の成膜方法
JP2008202107A (ja) * 2007-02-21 2008-09-04 Hitachi Kokusai Electric Inc 基板処理装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017022302A (ja) * 2015-07-14 2017-01-26 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
JP2018137369A (ja) * 2017-02-22 2018-08-30 東京エレクトロン株式会社 成膜方法及び成膜装置
KR20240058202A (ko) 2021-10-05 2024-05-03 도쿄엘렉트론가부시키가이샤 티탄 막을 형성하는 방법 및 티탄 막을 형성하는 장치

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