JP2010109341A5 - - Google Patents
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- Publication number
- JP2010109341A5 JP2010109341A5 JP2009220024A JP2009220024A JP2010109341A5 JP 2010109341 A5 JP2010109341 A5 JP 2010109341A5 JP 2009220024 A JP2009220024 A JP 2009220024A JP 2009220024 A JP2009220024 A JP 2009220024A JP 2010109341 A5 JP2010109341 A5 JP 2010109341A5
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- film transistor
- staggered thin
- semiconductor layer
- inverted staggered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims 27
- 239000004065 semiconductor Substances 0.000 claims 21
- 239000012535 impurity Substances 0.000 claims 3
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009220024A JP5562603B2 (ja) | 2008-09-30 | 2009-09-25 | 表示装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008252417 | 2008-09-30 | ||
JP2008252417 | 2008-09-30 | ||
JP2009220024A JP5562603B2 (ja) | 2008-09-30 | 2009-09-25 | 表示装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010109341A JP2010109341A (ja) | 2010-05-13 |
JP2010109341A5 true JP2010109341A5 (enrdf_load_stackoverflow) | 2012-10-18 |
JP5562603B2 JP5562603B2 (ja) | 2014-07-30 |
Family
ID=42298436
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009220024A Expired - Fee Related JP5562603B2 (ja) | 2008-09-30 | 2009-09-25 | 表示装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5562603B2 (enrdf_load_stackoverflow) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8598586B2 (en) | 2009-12-21 | 2013-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and manufacturing method thereof |
JP5752447B2 (ja) | 2010-03-15 | 2015-07-22 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI688047B (zh) * | 2010-08-06 | 2020-03-11 | 半導體能源研究所股份有限公司 | 半導體裝置 |
TWI538218B (zh) | 2010-09-14 | 2016-06-11 | 半導體能源研究所股份有限公司 | 薄膜電晶體 |
US8373215B2 (en) * | 2010-10-25 | 2013-02-12 | Texas Instruments Incorporated | Zero temperature coefficient capacitor |
US20120298999A1 (en) * | 2011-05-24 | 2012-11-29 | Sharp Kabushiki Kaisha | Semiconductor device and manufacturing method thereof |
JP2014045175A (ja) * | 2012-08-02 | 2014-03-13 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US20150263140A1 (en) * | 2014-03-14 | 2015-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
KR102354008B1 (ko) * | 2014-05-29 | 2022-01-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 반도체 장치의 제작 방법 및 전자 기기 |
KR102662057B1 (ko) * | 2016-10-07 | 2024-05-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 전자 기기 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06202156A (ja) * | 1992-12-28 | 1994-07-22 | Sharp Corp | ドライバーモノリシック駆動素子 |
JP2001102587A (ja) * | 1999-09-28 | 2001-04-13 | Toshiba Corp | 薄膜トランジスタおよびその製造方法ならびに半導体薄膜の製造方法 |
JP4993822B2 (ja) * | 2000-06-19 | 2012-08-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3638926B2 (ja) * | 2001-09-10 | 2005-04-13 | 株式会社半導体エネルギー研究所 | 発光装置及び半導体装置の作製方法 |
JP4531343B2 (ja) * | 2003-03-26 | 2010-08-25 | 株式会社半導体エネルギー研究所 | 駆動回路 |
JP2005322845A (ja) * | 2004-05-11 | 2005-11-17 | Sekisui Chem Co Ltd | 半導体デバイスと、その製造装置、および製造方法 |
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2009
- 2009-09-25 JP JP2009220024A patent/JP5562603B2/ja not_active Expired - Fee Related