JP2010103525A - Ledパッケージ - Google Patents
Ledパッケージ Download PDFInfo
- Publication number
- JP2010103525A JP2010103525A JP2009234634A JP2009234634A JP2010103525A JP 2010103525 A JP2010103525 A JP 2010103525A JP 2009234634 A JP2009234634 A JP 2009234634A JP 2009234634 A JP2009234634 A JP 2009234634A JP 2010103525 A JP2010103525 A JP 2010103525A
- Authority
- JP
- Japan
- Prior art keywords
- heat release
- recess
- led
- led package
- release patterns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 25
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 23
- 239000011159 matrix material Substances 0.000 claims description 7
- 230000017525 heat dissipation Effects 0.000 claims description 4
- 238000000926 separation method Methods 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 230000003197 catalytic effect Effects 0.000 description 3
- 239000002079 double walled nanotube Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002048 multi walled nanotube Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000002109 single walled nanotube Substances 0.000 description 3
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000011162 core material Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 230000003203 everyday effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
【解決手段】本LEDパッケージは、上部面に実装領域として提供される凹んだ形態の第1凹部を含むパッケージ本体、第1凹部の底面に一部が露出されるよう配置される第1及び第2リードフレーム、第1凹部の底面に実装され上記第1及び第2リードフレームと電気的に連結されるLEDチップ及びパッケージ本体の下部面に形成され炭素ナノチューブからなる複数の熱放出パターンを含む。
【選択図】図1
Description
110、210 パッケージ本体
111、211 第1凹部
112 第2凹部
130、230 LEDチップ
140、240 複数の熱放出パターン
Claims (8)
- 上部面に実装領域として提供される凹んだ形態の第1凹部を含むパッケージ本体と、
前記第1凹部の底面に一部が露出されるよう配置される第1及び第2リードフレームと、
前記第1凹部の底面に実装され前記第1及び第2リードフレームと電気的に連結されるLEDチップと、
前記パッケージ本体の下部面に形成され炭素ナノチューブからなる複数の熱放出パターンと、を含むLEDパッケージ。 - 前記複数の熱放出パターンは、マトリックス形態で配列されることを特徴とする請求項1に記載のLEDパッケージ。
- 前記マトリックス形態で配列された複数の熱放出パターンは3〜10μmの離隔距離を有することを特徴とする請求項2に記載のLEDパッケージ。
- 前記複数の熱放出パターンは、四角パターン、三角パターン、円形パターンの少なくともいずれか一つからなることを特徴とする請求項1から3の何れか1項に記載のLEDパッケージ。
- 前記パッケージ本体は、
前記下部面のうち前記第1凹部に対応する領域に膨らんだ形態の第2凹部をさらに含むことを特徴とする請求項1から4の何れか1項に記載のLEDパッケージ。 - 前記複数の熱放出パターンは、
前記パッケージ本体の下部面の前記第2凹部内に形成されることを特徴とする請求項5に記載のLEDパッケージ。 - 前記パッケージ本体は、
前記下部面のうちの両端部に前記複数の熱放出パターンを保護するための少なくとも2つ以上の支持突起をさらに含むことを特徴とする請求項1から6の何れか1項に記載のLEDパッケージ。 - 前記支持突起は、前記複数の熱放出パターンの高さと同一であるか、大きいことを特徴とする請求項7に記載のLEDパッケージ。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080105536A KR100978571B1 (ko) | 2008-10-27 | 2008-10-27 | Led 패키지 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2010103525A true JP2010103525A (ja) | 2010-05-06 |
Family
ID=42273840
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009234634A Pending JP2010103525A (ja) | 2008-10-27 | 2009-10-08 | Ledパッケージ |
Country Status (3)
Country | Link |
---|---|
US (1) | US8084778B2 (ja) |
JP (1) | JP2010103525A (ja) |
KR (1) | KR100978571B1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20130024147A (ko) * | 2011-08-30 | 2013-03-08 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 조명 장치 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101125296B1 (ko) * | 2009-10-21 | 2012-03-27 | 엘지이노텍 주식회사 | 라이트 유닛 |
KR101114794B1 (ko) * | 2009-10-26 | 2012-03-09 | 엘지이노텍 주식회사 | 발광소자 패키지 및 그 제조방법 |
TWI476958B (zh) * | 2009-12-23 | 2015-03-11 | Hon Hai Prec Ind Co Ltd | 發光二極體封裝結構及其封裝方法 |
CN102840488A (zh) * | 2012-09-11 | 2012-12-26 | 广东宏泰照明科技有限公司 | 具有散热功能的led灯 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002059392A1 (de) * | 2001-01-25 | 2002-08-01 | Infineon Technologies Ag | Verfahren zum wachsen von kohlenstoff-nanoröhren oberhalb einer elektrisch zu kontaktierenden unterlage sowie bauelement |
JP2003249613A (ja) * | 2001-12-20 | 2003-09-05 | Intel Corp | カーボンナノチューブ熱インターフェイス構造 |
JP2003332504A (ja) * | 2002-05-13 | 2003-11-21 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2004140356A (ja) * | 2002-10-18 | 2004-05-13 | Semikron Elektron Gmbh | パワー半導体モジュール |
JP2006147801A (ja) * | 2004-11-18 | 2006-06-08 | Seiko Precision Inc | 放熱シート、インターフェース、電子部品及び放熱シートの製造方法 |
JP2007027752A (ja) * | 2005-07-20 | 2007-02-01 | Samsung Electro Mech Co Ltd | Ledパッケージ及びその製造方法 |
JP2007531243A (ja) * | 2003-07-07 | 2007-11-01 | ゲルコアー リミテッド ライアビリティ カンパニー | ナノチューブ領域を用いて熱ヒートシンク作用を補助する電子デバイス及びその製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100873630B1 (ko) | 2002-01-16 | 2008-12-12 | 삼성에스디아이 주식회사 | 방열 구조체 및 그의 제조방법 |
JP4132043B2 (ja) | 2002-11-27 | 2008-08-13 | 京セラ株式会社 | 発光素子収納用パッケージおよび発光装置 |
KR100890741B1 (ko) * | 2007-03-13 | 2009-03-26 | 삼성전기주식회사 | 고출력 led 패키지 및 그 제조방법 |
KR101396585B1 (ko) * | 2007-06-11 | 2014-05-20 | 서울반도체 주식회사 | 탄소나노소재를 함유하는 복합재료층을 갖는 발광 다이오드패키지 |
JP3144055U (ja) * | 2008-06-03 | 2008-08-14 | 陳鴻文 | 発光ダイオードランプ |
-
2008
- 2008-10-27 KR KR1020080105536A patent/KR100978571B1/ko not_active IP Right Cessation
-
2009
- 2009-10-01 US US12/571,751 patent/US8084778B2/en not_active Expired - Fee Related
- 2009-10-08 JP JP2009234634A patent/JP2010103525A/ja active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002059392A1 (de) * | 2001-01-25 | 2002-08-01 | Infineon Technologies Ag | Verfahren zum wachsen von kohlenstoff-nanoröhren oberhalb einer elektrisch zu kontaktierenden unterlage sowie bauelement |
JP2003249613A (ja) * | 2001-12-20 | 2003-09-05 | Intel Corp | カーボンナノチューブ熱インターフェイス構造 |
JP2003332504A (ja) * | 2002-05-13 | 2003-11-21 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2004140356A (ja) * | 2002-10-18 | 2004-05-13 | Semikron Elektron Gmbh | パワー半導体モジュール |
JP2007531243A (ja) * | 2003-07-07 | 2007-11-01 | ゲルコアー リミテッド ライアビリティ カンパニー | ナノチューブ領域を用いて熱ヒートシンク作用を補助する電子デバイス及びその製造方法 |
JP2006147801A (ja) * | 2004-11-18 | 2006-06-08 | Seiko Precision Inc | 放熱シート、インターフェース、電子部品及び放熱シートの製造方法 |
JP2007027752A (ja) * | 2005-07-20 | 2007-02-01 | Samsung Electro Mech Co Ltd | Ledパッケージ及びその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20130024147A (ko) * | 2011-08-30 | 2013-03-08 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 조명 장치 |
KR101880058B1 (ko) * | 2011-08-30 | 2018-07-20 | 엘지이노텍 주식회사 | 발광 소자 패키지 및 조명 장치 |
Also Published As
Publication number | Publication date |
---|---|
US8084778B2 (en) | 2011-12-27 |
US20100171143A1 (en) | 2010-07-08 |
KR20100046617A (ko) | 2010-05-07 |
KR100978571B1 (ko) | 2010-08-27 |
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