JP2010073823A - 成膜装置、成膜方法、及びコンピュータ可読記憶媒体 - Google Patents

成膜装置、成膜方法、及びコンピュータ可読記憶媒体 Download PDF

Info

Publication number
JP2010073823A
JP2010073823A JP2008238439A JP2008238439A JP2010073823A JP 2010073823 A JP2010073823 A JP 2010073823A JP 2008238439 A JP2008238439 A JP 2008238439A JP 2008238439 A JP2008238439 A JP 2008238439A JP 2010073823 A JP2010073823 A JP 2010073823A
Authority
JP
Japan
Prior art keywords
gas
substrate holding
film forming
substrate
forming apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2008238439A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010073823A5 (enExample
Inventor
Hisashi Kato
寿 加藤
Kazuteru Obara
一輝 小原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2008238439A priority Critical patent/JP2010073823A/ja
Priority to US12/559,616 priority patent/US20100068893A1/en
Priority to TW098131144A priority patent/TW201028497A/zh
Priority to KR1020090087274A priority patent/KR20100032326A/ko
Priority to CN200910173919A priority patent/CN101676433A/zh
Publication of JP2010073823A publication Critical patent/JP2010073823A/ja
Publication of JP2010073823A5 publication Critical patent/JP2010073823A5/ja
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
JP2008238439A 2008-09-17 2008-09-17 成膜装置、成膜方法、及びコンピュータ可読記憶媒体 Withdrawn JP2010073823A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2008238439A JP2010073823A (ja) 2008-09-17 2008-09-17 成膜装置、成膜方法、及びコンピュータ可読記憶媒体
US12/559,616 US20100068893A1 (en) 2008-09-17 2009-09-15 Film deposition apparatus, film deposition method, and computer readable storage medium
TW098131144A TW201028497A (en) 2008-09-17 2009-09-16 Film deposition apparatus, film deposition method, and computer readable storage medium
KR1020090087274A KR20100032326A (ko) 2008-09-17 2009-09-16 성막 장치, 성막 방법 및 컴퓨터 판독 가능 기억 매체
CN200910173919A CN101676433A (zh) 2008-09-17 2009-09-17 成膜装置及成膜方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008238439A JP2010073823A (ja) 2008-09-17 2008-09-17 成膜装置、成膜方法、及びコンピュータ可読記憶媒体

Publications (2)

Publication Number Publication Date
JP2010073823A true JP2010073823A (ja) 2010-04-02
JP2010073823A5 JP2010073823A5 (enExample) 2011-07-14

Family

ID=42007608

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008238439A Withdrawn JP2010073823A (ja) 2008-09-17 2008-09-17 成膜装置、成膜方法、及びコンピュータ可読記憶媒体

Country Status (5)

Country Link
US (1) US20100068893A1 (enExample)
JP (1) JP2010073823A (enExample)
KR (1) KR20100032326A (enExample)
CN (1) CN101676433A (enExample)
TW (1) TW201028497A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014500626A (ja) * 2010-12-01 2014-01-09 北京北方▲微▼▲電▼子基地▲設▼▲備▼工▲芸▼研究中心有限▲責▼任公司 トレイデバイスおよび結晶膜成長装置
JP2014036216A (ja) * 2012-08-10 2014-02-24 Hitachi Kokusai Electric Inc 半導体装置の製造方法、基板処理方法および基板処理装置
JP2014212331A (ja) * 2014-06-13 2014-11-13 東京エレクトロン株式会社 縦型熱処理装置
JP2015185750A (ja) * 2014-03-25 2015-10-22 東京エレクトロン株式会社 真空処理装置

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101451716B1 (ko) * 2008-08-11 2014-10-16 도쿄엘렉트론가부시키가이샤 성막 방법 및 성막 장치
KR101041143B1 (ko) * 2009-04-16 2011-06-13 삼성모바일디스플레이주식회사 기판 가공 장치
KR101150850B1 (ko) * 2010-01-22 2012-06-13 주식회사 엘지실트론 웨이퍼 세정장비용 카세트 지그 및 이를 구비한 카세트 어셈블리
JP5742185B2 (ja) * 2010-03-19 2015-07-01 東京エレクトロン株式会社 成膜装置、成膜方法、回転数の最適化方法及び記憶媒体
JP5565242B2 (ja) * 2010-09-29 2014-08-06 東京エレクトロン株式会社 縦型熱処理装置
JP5805461B2 (ja) * 2010-10-29 2015-11-04 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
CN102560636B (zh) * 2010-12-14 2016-03-30 北京北方微电子基地设备工艺研究中心有限责任公司 一种基片承载装置及应用该装置的基片处理设备
JP5675458B2 (ja) * 2011-03-25 2015-02-25 東京エレクトロン株式会社 成膜方法、成膜装置および記憶媒体
US9695509B2 (en) * 2012-10-23 2017-07-04 Hitachi Kokusai Electric Inc. Substrate processing apparatus, purging apparatus, method of manufacturing semiconductor device, and recording medium
JP5944883B2 (ja) * 2013-12-18 2016-07-05 東京エレクトロン株式会社 粒子逆流防止部材及び基板処理装置
JP6447393B2 (ja) * 2015-07-06 2019-01-09 東京エレクトロン株式会社 成膜処理装置、成膜処理方法及び記憶媒体
CN105063550B (zh) * 2015-08-20 2017-11-28 包头天和磁材技术有限责任公司 渗透装置及方法
JP6592394B2 (ja) * 2016-04-21 2019-10-16 東京エレクトロン株式会社 プラズマ処理装置の保守方法
FR3055468B1 (fr) * 2016-08-30 2018-11-16 Semco Tech Dispositif de traitement de pieces
CN117810127A (zh) 2017-02-23 2024-04-02 株式会社国际电气 基板处理装置、半导体装置的制造方法、基板处理方法、容器及存储介质
US12289839B2 (en) 2021-05-18 2025-04-29 Mellanox Technologies, Ltd. Process for localized repair of graphene-coated lamination stacks and printed circuit boards
US12221695B2 (en) * 2021-05-18 2025-02-11 Mellanox Technologies, Ltd. CVD system with flange assembly for facilitating uniform and laminar flow
US12163228B2 (en) 2021-05-18 2024-12-10 Mellanox Technologies, Ltd. CVD system with substrate carrier and associated mechanisms for moving substrate therethrough

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4926793A (en) * 1986-12-15 1990-05-22 Shin-Etsu Handotai Co., Ltd. Method of forming thin film and apparatus therefor
US4976996A (en) * 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
US8043432B2 (en) * 2007-02-12 2011-10-25 Tokyo Electron Limited Atomic layer deposition systems and methods

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014500626A (ja) * 2010-12-01 2014-01-09 北京北方▲微▼▲電▼子基地▲設▼▲備▼工▲芸▼研究中心有限▲責▼任公司 トレイデバイスおよび結晶膜成長装置
JP2014036216A (ja) * 2012-08-10 2014-02-24 Hitachi Kokusai Electric Inc 半導体装置の製造方法、基板処理方法および基板処理装置
JP2015185750A (ja) * 2014-03-25 2015-10-22 東京エレクトロン株式会社 真空処理装置
JP2014212331A (ja) * 2014-06-13 2014-11-13 東京エレクトロン株式会社 縦型熱処理装置

Also Published As

Publication number Publication date
CN101676433A (zh) 2010-03-24
KR20100032326A (ko) 2010-03-25
TW201028497A (en) 2010-08-01
US20100068893A1 (en) 2010-03-18

Similar Documents

Publication Publication Date Title
JP2010073823A (ja) 成膜装置、成膜方法、及びコンピュータ可読記憶媒体
US10475641B2 (en) Substrate processing apparatus
JP5056735B2 (ja) 成膜装置
KR101569944B1 (ko) 성막 장치
KR101222396B1 (ko) 성막 장치, 성막 방법, 및 이 성막 방법을 성막 장치에 실시시키는 프로그램을 기억하는 컴퓨터 판독 가능 기억 매체
JP5287592B2 (ja) 成膜装置
KR101592583B1 (ko) 성막 장치, 성막 장치의 클리닝 방법 및 컴퓨터 판독 가능 기억 매체
JP5173684B2 (ja) 成膜装置、成膜方法、並びにこの成膜方法を成膜装置に実施させるプログラム及びこれを記憶するコンピュータ可読記憶媒体
US20100068383A1 (en) Film deposition apparatus, film deposition method, and computer readable storage medium
JP5195676B2 (ja) 成膜装置、基板処理装置、成膜方法及び記憶媒体
KR101536779B1 (ko) 복수의 반응 가스를 차례로 기판에 공급하는 성막 장치, 기판 처리 장치, 성막 방법, 및 컴퓨터 판독 가능한 기록 매체
US20150267298A1 (en) Film forming apparatus
US10358720B2 (en) Substrate processing apparatus
JP2010126797A (ja) 成膜装置、半導体製造装置、これらに用いられるサセプタ、プログラム、およびコンピュータ可読記憶媒体
JP5093078B2 (ja) 成膜装置
US20170241018A1 (en) Film deposition apparatus, film deposition method and computer readable medium
JP5173685B2 (ja) 成膜装置、成膜方法、並びにこの成膜方法を成膜装置に実施させるプログラムおよびこれを記憶するコンピュータ可読記憶媒体
JP5276386B2 (ja) 成膜装置、成膜方法、並びにこの成膜方法を成膜装置に実施させるプログラム及びこれを記憶するコンピュータ可読記憶媒体
US12173405B2 (en) Processing apparatus and processing method
JP7433178B2 (ja) 処理装置

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110523

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110526

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120210

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20121029