JP2010067708A - 受光素子 - Google Patents
受光素子 Download PDFInfo
- Publication number
- JP2010067708A JP2010067708A JP2008231073A JP2008231073A JP2010067708A JP 2010067708 A JP2010067708 A JP 2010067708A JP 2008231073 A JP2008231073 A JP 2008231073A JP 2008231073 A JP2008231073 A JP 2008231073A JP 2010067708 A JP2010067708 A JP 2010067708A
- Authority
- JP
- Japan
- Prior art keywords
- photodiode
- light receiving
- electrode
- insulating film
- face
- Prior art date
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- 239000002184 metal Substances 0.000 claims abstract description 23
- 230000003287 optical effect Effects 0.000 claims abstract description 10
- 238000009792 diffusion process Methods 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 11
- 239000000758 substrate Substances 0.000 claims description 11
- 230000005684 electric field Effects 0.000 abstract description 6
- 239000010408 film Substances 0.000 description 20
- 239000003990 capacitor Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 5
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
【解決手段】フォトダイオード10は、光導波路12の端面が受光面14となっている端面受光型のフォトダイオードである。信号電極16及びバイアス電極18は、フォトダイオード10の同一面上に形成され、フォトダイオード10のアノード及びカソードにそれぞれ接続されている。絶縁膜20がバイアス電極18上に形成されている。絶縁膜20上に金属電極22が形成されている。
【選択図】図1
Description
図1は、本発明の実施の形態1に係る受光素子を示す斜視図である。フォトダイオード10は、光導波路12の端面が受光面14となっている端面受光型のフォトダイオードである。信号電極16及びバイアス電極18は、フォトダイオード10の同一面上に形成され、フォトダイオード10のアノード及びカソードにそれぞれ接続されている。このバイアス電極18は、信号電極16に対してAC−GNDとして機能する。そして、両者は電界結合してコプレナ線路を形成している。
Cs=ε×εr×S/d
図6は、本発明の実施の形態2に係る受光素子を示す斜視図である。図1と同じ構成要素には同じ番号を付し、説明を省略する。
図7は、本発明の実施の形態3に係る受光素子と集積回路を接続した状態を示す斜視図である。図1,図2と同じ構成要素には同じ番号を付し、説明を省略する。
12 光導波路
14 受光面
16 信号電極
18 バイアス電極
20 絶縁膜
22 金属電極
42 不純物拡散領域
44 基板
46 ワイヤ
Claims (3)
- 光導波路の端面が受光面となる端面受光型のフォトダイオードと、
前記フォトダイオードの同一面上に形成され、前記フォトダイオードのアノード及びカソードにそれぞれ接続された信号電極及びバイアス電極と、
前記バイアス電極上に形成された絶縁膜と、
前記絶縁膜上に形成された金属電極と、を備えることを特徴とする受光素子。 - 光導波路の端面が受光面となる端面受光型のフォトダイオードと、
前記フォトダイオードの上面上に形成され、前記フォトダイオードのアノードに接続された信号電極と、
前記フォトダイオードの前記上面に形成された不純物拡散領域と、
前記不純物拡散領域上に形成され、前記フォトダイオードのカソードに接続されたバイアス電極と、
前記不純物拡散領域上に形成された絶縁膜と、
前記絶縁膜上に形成された金属電極と、を備えることを特徴とする受光素子。 - 光導波路の端面が受光面となる端面受光型のフォトダイオードと、
前記フォトダイオードの同一面上に形成され、前記フォトダイオードのアノード及びカソードにそれぞれ接続された信号電極及びバイアス電極と、
基準電位を持った基板と、
前記基板上に形成された絶縁膜と、
前記絶縁膜上に形成された金属電極と、
前記バイアス電極と前記金属電極を接続するワイヤと、を備えることを特徴とする受光素子。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008231073A JP5077158B2 (ja) | 2008-09-09 | 2008-09-09 | 受光素子 |
US12/542,961 US8482091B2 (en) | 2008-09-09 | 2009-08-18 | Light receiving element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008231073A JP5077158B2 (ja) | 2008-09-09 | 2008-09-09 | 受光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010067708A true JP2010067708A (ja) | 2010-03-25 |
JP5077158B2 JP5077158B2 (ja) | 2012-11-21 |
Family
ID=41798484
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008231073A Active JP5077158B2 (ja) | 2008-09-09 | 2008-09-09 | 受光素子 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8482091B2 (ja) |
JP (1) | JP5077158B2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013065714A (ja) * | 2011-09-16 | 2013-04-11 | Sumitomo Electric Ind Ltd | 多チャネル光導波路型受光デバイス |
JP2014170823A (ja) * | 2013-03-04 | 2014-09-18 | Sumitomo Electric Ind Ltd | 半導体集積受光デバイス |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002222983A (ja) * | 2001-01-26 | 2002-08-09 | Oki Electric Ind Co Ltd | 光通信用受光モジュール |
JP2003197952A (ja) * | 2001-12-27 | 2003-07-11 | Mitsubishi Electric Corp | 光信号受信モジュール |
JP2004095869A (ja) * | 2002-08-30 | 2004-03-25 | Mitsubishi Electric Corp | 受光素子および受光装置 |
JP2004111762A (ja) * | 2002-09-20 | 2004-04-08 | Fujitsu Quantum Devices Ltd | 半導体受光装置 |
JP2004146408A (ja) * | 2002-10-21 | 2004-05-20 | Mitsubishi Electric Corp | 導波路型フォトダイオードおよびその製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5252852A (en) * | 1989-03-14 | 1993-10-12 | Fujitsu Limited | Semiconductor device having flip chip bonding pads matched with pin photodiodes in a symmetrical layout configuration |
JP3047735B2 (ja) | 1994-05-16 | 2000-06-05 | 住友電気工業株式会社 | 光受信モジュ−ルとその製造方法 |
JP4045830B2 (ja) | 2002-03-28 | 2008-02-13 | 住友電気工業株式会社 | 受光モジュール |
JP2003332591A (ja) | 2002-05-16 | 2003-11-21 | Shinko Electric Ind Co Ltd | 受光装置 |
JP4295546B2 (ja) * | 2003-04-11 | 2009-07-15 | 三菱電機株式会社 | 差動駆動型半導体光変調器 |
JP2006066488A (ja) * | 2004-08-25 | 2006-03-09 | Mitsubishi Electric Corp | 半導体受光素子およびその製造方法 |
-
2008
- 2008-09-09 JP JP2008231073A patent/JP5077158B2/ja active Active
-
2009
- 2009-08-18 US US12/542,961 patent/US8482091B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002222983A (ja) * | 2001-01-26 | 2002-08-09 | Oki Electric Ind Co Ltd | 光通信用受光モジュール |
JP2003197952A (ja) * | 2001-12-27 | 2003-07-11 | Mitsubishi Electric Corp | 光信号受信モジュール |
JP2004095869A (ja) * | 2002-08-30 | 2004-03-25 | Mitsubishi Electric Corp | 受光素子および受光装置 |
JP2004111762A (ja) * | 2002-09-20 | 2004-04-08 | Fujitsu Quantum Devices Ltd | 半導体受光装置 |
JP2004146408A (ja) * | 2002-10-21 | 2004-05-20 | Mitsubishi Electric Corp | 導波路型フォトダイオードおよびその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013065714A (ja) * | 2011-09-16 | 2013-04-11 | Sumitomo Electric Ind Ltd | 多チャネル光導波路型受光デバイス |
JP2014170823A (ja) * | 2013-03-04 | 2014-09-18 | Sumitomo Electric Ind Ltd | 半導体集積受光デバイス |
Also Published As
Publication number | Publication date |
---|---|
US8482091B2 (en) | 2013-07-09 |
US20100059839A1 (en) | 2010-03-11 |
JP5077158B2 (ja) | 2012-11-21 |
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