JP2010059488A - 成膜方法及び成膜装置 - Google Patents
成膜方法及び成膜装置 Download PDFInfo
- Publication number
- JP2010059488A JP2010059488A JP2008226532A JP2008226532A JP2010059488A JP 2010059488 A JP2010059488 A JP 2010059488A JP 2008226532 A JP2008226532 A JP 2008226532A JP 2008226532 A JP2008226532 A JP 2008226532A JP 2010059488 A JP2010059488 A JP 2010059488A
- Authority
- JP
- Japan
- Prior art keywords
- film
- film forming
- gas
- tungsten
- base material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000151 deposition Methods 0.000 title claims abstract description 12
- 230000008021 deposition Effects 0.000 title claims abstract description 7
- 239000010408 film Substances 0.000 claims abstract description 378
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 139
- 239000010937 tungsten Substances 0.000 claims abstract description 139
- 239000000463 material Substances 0.000 claims abstract description 130
- 239000003054 catalyst Substances 0.000 claims abstract description 120
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 118
- 238000000576 coating method Methods 0.000 claims abstract description 110
- 239000011248 coating agent Substances 0.000 claims abstract description 109
- 238000012545 processing Methods 0.000 claims abstract description 74
- 230000001603 reducing effect Effects 0.000 claims abstract description 59
- 239000010409 thin film Substances 0.000 claims abstract description 56
- 230000003197 catalytic effect Effects 0.000 claims abstract description 15
- 230000003213 activating effect Effects 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 117
- 230000008569 process Effects 0.000 claims description 54
- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 42
- 238000004140 cleaning Methods 0.000 claims description 32
- 238000011109 contamination Methods 0.000 claims description 32
- 238000005121 nitriding Methods 0.000 claims description 30
- 238000010438 heat treatment Methods 0.000 claims description 29
- -1 tungsten nitride Chemical class 0.000 claims description 24
- 229910052697 platinum Inorganic materials 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 11
- 229910052799 carbon Inorganic materials 0.000 claims description 11
- 239000000470 constituent Substances 0.000 claims description 10
- 229910052741 iridium Inorganic materials 0.000 claims description 9
- 229910052702 rhenium Inorganic materials 0.000 claims description 9
- 229910052707 ruthenium Inorganic materials 0.000 claims description 9
- 238000003860 storage Methods 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 3
- 230000009467 reduction Effects 0.000 claims description 2
- 238000004590 computer program Methods 0.000 claims 2
- 239000012528 membrane Substances 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract description 21
- 239000007789 gas Substances 0.000 description 247
- 235000012431 wafers Nutrition 0.000 description 58
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 49
- 239000004065 semiconductor Substances 0.000 description 15
- 238000007796 conventional method Methods 0.000 description 10
- 125000004429 atom Chemical group 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 239000001257 hydrogen Substances 0.000 description 5
- 229910052739 hydrogen Inorganic materials 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000006911 nucleation Effects 0.000 description 4
- 238000010899 nucleation Methods 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000003575 carbonaceous material Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000000678 plasma activation Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 150000003657 tungsten Chemical class 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000011538 cleaning material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 238000000624 total reflection X-ray fluorescence spectroscopy Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
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- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008226532A JP2010059488A (ja) | 2008-09-03 | 2008-09-03 | 成膜方法及び成膜装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008226532A JP2010059488A (ja) | 2008-09-03 | 2008-09-03 | 成膜方法及び成膜装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010059488A true JP2010059488A (ja) | 2010-03-18 |
| JP2010059488A5 JP2010059488A5 (OSRAM) | 2011-08-25 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008226532A Pending JP2010059488A (ja) | 2008-09-03 | 2008-09-03 | 成膜方法及び成膜装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2010059488A (OSRAM) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012184449A (ja) * | 2011-03-03 | 2012-09-27 | Taiyo Nippon Sanso Corp | 金属薄膜の製膜方法、金属薄膜、および金属薄膜の製膜装置 |
| WO2018021014A1 (ja) * | 2016-07-26 | 2018-02-01 | 東京エレクトロン株式会社 | タングステン膜の成膜方法 |
| CN109427576A (zh) * | 2017-09-04 | 2019-03-05 | 东京毅力科创株式会社 | 蚀刻方法 |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6340314A (ja) * | 1986-08-05 | 1988-02-20 | Hiroshima Univ | 触媒ｃｖｄ法による薄膜の製造法とその装置 |
| JPH07223898A (ja) * | 1994-02-08 | 1995-08-22 | Sumitomo Electric Ind Ltd | ダイヤモンドの合成法 |
| JP2000073172A (ja) * | 1998-08-27 | 2000-03-07 | Hideki Matsumura | 触媒化学蒸着装置 |
| JP2000277502A (ja) * | 1999-03-25 | 2000-10-06 | Japan Science & Technology Corp | 化学蒸着装置 |
| JP2000277501A (ja) * | 1999-03-25 | 2000-10-06 | Japan Science & Technology Corp | 化学蒸着装置 |
| JP2007042815A (ja) * | 2005-08-02 | 2007-02-15 | Ulvac Japan Ltd | 触媒線化学気相成長装置および触媒線化学気相成長装置における触媒線の再生方法 |
| JP2007308735A (ja) * | 2006-05-16 | 2007-11-29 | Tokyo Electron Ltd | 成膜方法及び成膜装置 |
-
2008
- 2008-09-03 JP JP2008226532A patent/JP2010059488A/ja active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6340314A (ja) * | 1986-08-05 | 1988-02-20 | Hiroshima Univ | 触媒ｃｖｄ法による薄膜の製造法とその装置 |
| JPH07223898A (ja) * | 1994-02-08 | 1995-08-22 | Sumitomo Electric Ind Ltd | ダイヤモンドの合成法 |
| JP2000073172A (ja) * | 1998-08-27 | 2000-03-07 | Hideki Matsumura | 触媒化学蒸着装置 |
| JP2000277502A (ja) * | 1999-03-25 | 2000-10-06 | Japan Science & Technology Corp | 化学蒸着装置 |
| JP2000277501A (ja) * | 1999-03-25 | 2000-10-06 | Japan Science & Technology Corp | 化学蒸着装置 |
| JP2007042815A (ja) * | 2005-08-02 | 2007-02-15 | Ulvac Japan Ltd | 触媒線化学気相成長装置および触媒線化学気相成長装置における触媒線の再生方法 |
| JP2007308735A (ja) * | 2006-05-16 | 2007-11-29 | Tokyo Electron Ltd | 成膜方法及び成膜装置 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012184449A (ja) * | 2011-03-03 | 2012-09-27 | Taiyo Nippon Sanso Corp | 金属薄膜の製膜方法、金属薄膜、および金属薄膜の製膜装置 |
| WO2018021014A1 (ja) * | 2016-07-26 | 2018-02-01 | 東京エレクトロン株式会社 | タングステン膜の成膜方法 |
| CN109427576A (zh) * | 2017-09-04 | 2019-03-05 | 东京毅力科创株式会社 | 蚀刻方法 |
| JP2019046994A (ja) * | 2017-09-04 | 2019-03-22 | 東京エレクトロン株式会社 | エッチング方法 |
| CN109427576B (zh) * | 2017-09-04 | 2023-03-10 | 东京毅力科创株式会社 | 蚀刻方法 |
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