JP2010040571A5 - - Google Patents
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- Publication number
- JP2010040571A5 JP2010040571A5 JP2008198477A JP2008198477A JP2010040571A5 JP 2010040571 A5 JP2010040571 A5 JP 2010040571A5 JP 2008198477 A JP2008198477 A JP 2008198477A JP 2008198477 A JP2008198477 A JP 2008198477A JP 2010040571 A5 JP2010040571 A5 JP 2010040571A5
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- type impurity
- region
- fin
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000012535 impurity Substances 0.000 claims 78
- 239000004065 semiconductor Substances 0.000 claims 77
- 239000007789 gas Substances 0.000 claims 23
- 238000004519 manufacturing process Methods 0.000 claims 13
- 238000002513 implantation Methods 0.000 claims 4
- 125000006850 spacer group Chemical group 0.000 claims 4
- 238000000034 method Methods 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 238000007865 diluting Methods 0.000 claims 2
- 239000001307 helium Substances 0.000 claims 2
- 229910052734 helium Inorganic materials 0.000 claims 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008198477A JP5329865B2 (ja) | 2008-07-31 | 2008-07-31 | 半導体装置及びその製造方法 |
| US12/512,617 US8004045B2 (en) | 2007-07-27 | 2009-07-30 | Semiconductor device and method for producing the same |
| US13/185,221 US8536000B2 (en) | 2007-07-27 | 2011-07-18 | Method for producing a semiconductor device have fin-shaped semiconductor regions |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008198477A JP5329865B2 (ja) | 2008-07-31 | 2008-07-31 | 半導体装置及びその製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010040571A JP2010040571A (ja) | 2010-02-18 |
| JP2010040571A5 true JP2010040571A5 (enrdf_load_stackoverflow) | 2011-08-11 |
| JP5329865B2 JP5329865B2 (ja) | 2013-10-30 |
Family
ID=42012845
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008198477A Active JP5329865B2 (ja) | 2007-07-27 | 2008-07-31 | 半導体装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5329865B2 (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8778603B2 (en) * | 2010-03-15 | 2014-07-15 | Varian Semiconductor Equipment Associates, Inc. | Method and system for modifying substrate relief features using ion implantation |
| JP2015213183A (ja) * | 2015-06-25 | 2015-11-26 | インテル・コーポレーション | 非プレーナ型トランジスタのフィン製造 |
| JP7117354B2 (ja) * | 2020-09-14 | 2022-08-12 | 株式会社Kokusai Electric | 半導体装置の製造方法、基板処理装置、およびプログラム |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1881523B1 (en) * | 2005-05-12 | 2013-01-02 | Panasonic Corporation | Plasma doping method and plasma doping apparatus |
| KR101172853B1 (ko) * | 2005-07-22 | 2012-08-10 | 삼성전자주식회사 | 반도체 소자의 형성 방법 |
| US7494862B2 (en) * | 2006-09-29 | 2009-02-24 | Intel Corporation | Methods for uniform doping of non-planar transistor structures |
| JPWO2008050596A1 (ja) * | 2006-10-25 | 2010-02-25 | パナソニック株式会社 | プラズマドーピング方法及びプラズマドーピング装置 |
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2008
- 2008-07-31 JP JP2008198477A patent/JP5329865B2/ja active Active