JP2010024475A - Film deposition apparatus, and manufacturing method using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To fix a substrate to a groove even when the substrate of the size smaller than the size of the groove is subjected to the film deposition. <P>SOLUTION: A substrate holder 30 having one face 31 with a groove 32 being formed in the one face 31 is arranged in a reaction chamber 11 for heating a substrate 40, and the substrate 40 is arranged in the groove 32. When the substrate 40 of the size smaller than the size of the groove 32 is arranged in the groove 32, a dummy substrate 50 is arranged between a side face 41 of the substrate 40 and a wall surface 33 of the groove 32. Thus, the position of the substrate 40 is fixed in the groove 32. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

  The present invention relates to a film forming apparatus for forming a film by placing a substrate on a substrate holder and a manufacturing method using the same.

  Conventionally, for example, Patent Document 1 proposes a CVD film forming apparatus for growing a crystal layer on a crystal substrate. Specifically, Patent Document 1 proposes a CVD film forming apparatus in which a process chamber installed in a reaction vessel casing is provided with a disk-shaped mounting plate that supports a plurality of substrate holders. The mounting plate and the substrate holder are each configured to rotate in a certain direction during film formation.

Then, when the reaction film is grown on the surface of the substrate, the substrate is placed on the substrate holder and fixed. Generally, the substrate holder is formed with a groove corresponding to the size of the substrate. Therefore, the substrate is fitted into the groove using a dedicated substrate holder in which a groove substantially matching the size of the substrate is formed, and the substrate is fixed to the groove. Using such a substrate holder, a film is formed on the substrate surface.
JP-T-2004-507619

  However, since the size of the groove provided in the substrate holder is constant in the conventional technique, there is a problem that when a substrate having a size smaller than the size of the groove is placed in the groove, the substrate moves in the groove. Arise. That is, since a space is formed between the wall surface of the groove and the side surface of the substrate, the substrate slides on the bottom surface of the groove as the mounting plate and the substrate holder rotate. As a result, there is a problem in that film formation on the substrate cannot be performed stably, the film thickness becomes non-uniform, and the performance and quality of the reaction film deteriorate.

  For this reason, when the size of the groove differs from that of the substrate, it is necessary to use a substrate holder provided with a groove having the same size as the size of the substrate. However, a substrate holder must be prepared for each number and size of substrates, and the substrate holder in the film forming apparatus must be replaced with one that matches the size of the substrate.

  In view of the above points, an object of the present invention is to enable a substrate to be fixed to a groove even when a film is formed on a substrate having a size smaller than the size of the groove.

In order to achieve the above object, in the invention described in claim 1,
A substrate holder (30) having one surface (31) and having a groove (32) on one surface (31) is disposed in a reaction chamber (11) for heat-treating the substrate (40), and the groove (32) The substrate (40) is placed on the substrate (40), and the substrate holder (30) is rotated around the central axis perpendicular to the one surface (31) of the substrate holder (30). In the state where the substrate (40) having a size smaller than the size of the groove (32) is disposed in the groove (32), the side surface (41) of the substrate (40) and the wall surface (33 of the groove (32) are arranged. And a dummy substrate (50) disposed between the two.

  Accordingly, the position of the substrate (40) can be fixed in the groove (32) by the dummy substrate (50). For this reason, even if the substrate holder (30) rotates, the substrate (40) does not slide in the groove (32), and the film can be stably formed on the substrate (40).

  In the second aspect of the present invention, the reaction chamber (11) for heat-treating the substrate (40) has a surface (31) and a plurality of grooves (32) on the surface (31). (30) is disposed, the substrate (40) is disposed in each of the plurality of grooves (32), and the substrate holder (30) is rotated around a central axis perpendicular to one surface (31) of the substrate holder (30). In the film forming apparatus, the substrate (40) having a size smaller than the size of the groove (32) among the plurality of grooves (32) is disposed in the groove (32). In this case, a dummy substrate (50) disposed between the side surface (41) of the substrate (40) and the wall surface (33) of the groove (32) is provided.

  Thereby, even if the substrate holder (30) is provided with a plurality of grooves (32), the position of the substrate (40) can be fixed in the grooves (32) by the dummy substrate (50). Therefore, similarly to the first aspect, the film can be stably formed on the substrate (40).

  In the invention according to claim 3, the weight of the dummy substrate (50) is the sum of the weight of the substrate (40) having a size smaller than the size of the groove (32) and the weight of the dummy substrate (50). The weight is the same as the weight of the substrate (40) of the same size.

  Thereby, the board | substrate (40) smaller than the size of a groove | channel (32) can be considered as the same weight as the board | substrate (40) of the same size as the size of a groove | channel (32). Therefore, even if the size of the substrate (40) is reduced, the rotation of the substrate holder (30) remains stable. Therefore, the quality of the growth film can be stabilized without depending on the substrate size.

  As in the invention described in claim 4, the thickness of the dummy substrate (50) is equal to or larger than the thickness of the substrate (40) having the same size as the size of the groove (32) or smaller than the size of the groove (32). The thickness of the substrate (40) may be larger than the thickness of the substrate (40).

  The invention according to claim 5 is characterized in that the dummy substrate (50) has a ring shape. Thereby, a board | substrate (40) can be engage | inserted and fixed to the hollow part of a ring-shaped dummy board | substrate (50).

  The invention according to claim 6 is characterized in that the center of the hollow portion of the ring-shaped dummy substrate (50) is arranged on the central axis of the substrate holder (30). Thereby, the balance of rotation of the substrate holder (30) can be improved. For this reason, the in-plane uniformity of the growth film can be improved.

  As in the seventh aspect of the present invention, the surface of the dummy substrate (50) exposed on the one surface (31) of the substrate holder (30) may be composed of SiC. Since the surface of the dummy substrate (50) is SiC, it can be used repeatedly stably even at a high temperature of 1600 ° C.

  As in the eighth aspect of the invention, the dummy substrate (50) can be made of SiC. Since the dummy substrate (50) is SiC, it can be used stably and repeatedly even at a high temperature of 1600 ° C.

  As in the ninth aspect of the invention, the substrate (40) can be made of SiC. By using the same SiC for the dummy substrate (50) and the substrate (40), a stable film can be obtained even at a high temperature of 1600 ° C. or repeatedly.

  Although the film forming apparatus has been described above, the same applies to the manufacturing method using the film forming apparatus. That is, as in the invention described in claim 10, the side surface (41) of the substrate (40) and the substrate (40) having a size smaller than the size of the groove (32) are arranged in the groove (32). The film formation can be performed in a state where the dummy substrate (50) is arranged between the wall surface (33) of the groove (32).

  In addition, the code | symbol in the bracket | parenthesis of each said means shows the correspondence with the specific means as described in embodiment mentioned later.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, the same or equivalent parts are denoted by the same reference numerals in the drawings.

(First embodiment)
Hereinafter, a first embodiment of the present invention will be described with reference to the drawings. The film forming apparatus shown in this embodiment is a CVD apparatus that forms a growth film on a semiconductor substrate by a CVD method.

  FIG. 1 is a schematic sectional view of a film forming apparatus according to the first embodiment of the present invention. As shown in this figure, the film forming apparatus 1 includes a growth container 10, a susceptor 20, and a substrate holder 30.

  The growth vessel 10 has a reaction chamber 11 for heat-treating the substrate 40. For example, the reaction chamber 11 is depressurized from atmospheric pressure and filled with a reaction gas (film formation gas). Therefore, the growth vessel 10 is provided with an introduction passage 12 for introducing a reaction gas into the reaction chamber 11 and a discharge passage 13 for discharging the reaction gas from the reaction chamber 11. The introduction passage 12 is connected to a reaction gas supply mechanism (not shown) for introducing the reaction gas, and the discharge passage 13 is connected to a reaction gas processing mechanism (not shown) for processing the reaction gas.

  The reaction chamber 11 is provided with a guide 14 for designating the flow of the reaction gas introduced into the reaction chamber 11 through the introduction passage 12. As a result, the reaction gas introduced into the reaction chamber 11 via the introduction passage 12 flows from the central portion of the reaction chamber 11 to the outer edge portion.

  In order to heat the substrate 40, a high-frequency coil or a plurality of lamps (not shown) are disposed in the vicinity of the susceptor 20. As a result, the substrate 40 is heated together with the susceptor 20.

  The susceptor 20 is a disk-shaped table having one surface 21 and another surface 22. One end of a rod-like shaft 23 extending in a direction perpendicular to the other surface 22 is attached to the other surface 22 of the susceptor 20. The central axis of the shaft 23 coincides with the central axis of the susceptor 20. The other end of the shaft 23 extends from the reaction chamber 11 to the outside and is attached to a rotation mechanism (not shown). As a result, the susceptor 20 can be rotated in one direction via the shaft 23.

  The susceptor 20 has a plurality of substrate holders 30 arranged on one surface 21. As shown in FIG. 1, a plurality of grooves 24 are provided on one surface 21 of the susceptor 20. A disk-shaped substrate holder 30 is disposed in each groove 24.

  FIG. 2 is a plan view of the susceptor 20 as seen from the one surface 21 side to the other surface 22 side. As shown in this figure, in this embodiment, six grooves 24 are provided on one surface 21 of the susceptor 20, and a substrate holder 30 is disposed in each groove 24.

  The substrate holder 30 holds the substrate 40. The substrate holder 30 will be described with reference to FIG. 3A is a cross-sectional view taken along the line AA in FIG. 2, and FIG. 3B is a cross-sectional view taken along the line BB in FIG. In FIG. 3, the cross section of the susceptor 20 is omitted.

  As shown in FIGS. 3A and 3B, the substrate holder 30 has one surface 31, and the one surface 31 has a recessed groove 32. For example, when a 3-inch substrate is mounted, the size of the groove 32 is slightly larger than 3 inches, which is the size of the substrate 40 (for example, 0.2 to 2 mm), and the depth of the groove 32 is the same as the thickness of the substrate. For example, it is about 0.3 to 0.5 mm. The substrate holder 30 having the groove 32 having such a shape is fixed to each groove portion 24 of the susceptor 20 as shown in FIG.

  The substrate holder 30 has a rotation mechanism (not shown) such as a planetary gear or a gas drive on the surface opposite to the one surface 31. Therefore, the substrate holder 30 rotates around the central axis perpendicular to the one surface 31 of the substrate holder 30 as indicated by the arrow in FIG. Such a substrate holder 30 is made of, for example, carbon.

  Then, a 3-inch substrate 40 having a size slightly smaller than the size of the groove 32 is fitted in the groove 32 of the substrate holder 30 shown in FIG. Thereby, the position of the substrate 40 is fixed to the groove 32. In the present embodiment, the substrate 40 made of SiC is used.

  On the other hand, a substrate 40 having a size smaller than that of the groove 32 of the substrate holder 30 is disposed in the groove 32 of the substrate holder 30 shown in FIG. The size of the substrate 40 shown in FIG. 3B is, for example, 2 inches. A dummy substrate 50 is provided between the side surface 41 of the substrate 40 and the wall surface 33 of the groove 32.

  The dummy substrate 50 is prepared when the size of the substrate 40 is smaller than the size of the groove 32 of the substrate holder 30, and is arranged in the groove 32 together with the substrate 40. FIG. 4 is a plan view of the dummy substrate 50. As shown in this figure, in this embodiment, the dummy substrate 50 has a ring shape. As a result, the substrate 40 can be fitted and fixed in the hollow portion of the ring-shaped dummy substrate 50.

  The centers of the inner periphery and the outer periphery of the ring-shaped dummy substrate 50 are the same, and the center of the hollow portion of the ring-shaped dummy substrate 50 (that is, the center of the inner periphery) is the central axis of the substrate holder 30. Placed on top. This makes it possible to improve the balance of rotation of the substrate holder 30 and improve the in-plane uniformity of the growth film.

  The weight of the dummy substrate 50 is such that the sum of the weight of the substrate 40 having a size smaller than the size of the groove 32 and the weight of the dummy substrate 50 is the same as the weight of the substrate 40 having the same size as the size of the groove 32. It has become. In other words, the weight of the dummy substrate 50 is a weight obtained by subtracting the weight of the substrate 40 having a size smaller than the size of the groove 32 from the weight of the substrate 40 having the same size as the size of the groove 32.

  That is, the weight of one substrate 40 shown in FIG. 3A is the same as the weight of two substrates 40 and the dummy substrate 50 shown in FIG. 3B. Thereby, since the weight deviation does not occur for each substrate holder 30, the substrate holders 30 each rotate stably. For this reason, the uniformity of the grown film thickness is also stabilized.

  The thickness of the dummy substrate 50 is the same as the thickness of the substrate 40 having the same size as the size of the groove 32 or the thickness of the substrate 40 having a size smaller than the size of the groove 32. That is, as shown in each drawing of FIG. 3, when the substrate 40 and the dummy substrate 50 are disposed in the groove 32 of the substrate holder 30, the substrate 40 and the dummy substrate 50 are flush with the one surface 31 of the substrate holder 30. It has become.

  As the dummy substrate 50 as described above, a substrate made of SiC is used. The dummy substrate 50 is formed, for example, by preparing a single SiC substrate and providing a through hole in a part of the SiC substrate. Further, the radial width of the dummy substrate 50 matches the width between the side surface 41 of the substrate 40 having a size smaller than the size of the groove 32 and the wall surface 33 of the groove 32, but the dummy substrate 50 itself thermally expands. In consideration of this, a slight gap is provided between the dummy substrate 50 and the wall surface 33 of the groove 32 or between the dummy substrate 50 and the substrate 40.

  The above is the configuration of the film forming apparatus 1 according to the present embodiment and the configuration of the dummy substrate 50 provided in the film forming apparatus 1. The heating control in the reaction chamber 11 such as the rotation speed of the susceptor 20 and the introduction / discharge of the reaction gas in the film forming apparatus 1 is performed by a control device (not shown).

  Next, a method for forming a growth film on the substrate 40 using the film forming apparatus 1 will be described. First, the substrate holder 30 is disposed in each groove portion 24 of the susceptor 20, and the substrate 40 is disposed in the groove 32 of each substrate holder 30.

  Here, as shown in FIG. 2, among the six substrate holders 30, a substrate 40 (for example, 3 inches) having the same size as the groove 32 is disposed in three substrate holders 30. On the other hand, a substrate 40 (for example, 2 inches) smaller than the size of the groove 32 is disposed on each of the remaining three substrate holders 30, and a dummy substrate is further interposed between the side surface 41 of the substrate 40 and the wall surface 33 of the groove 32. 50 are arranged. Thereby, the position of the substrate 40 having a small size is fixed in the groove 32.

  As described above, the substrate 40 having the same size as the groove 32 can be installed in the three substrate holders 30 with respect to the six substrate holders 30. Further, by using the dummy substrate 50, the substrate 40 having a size smaller than the size of the groove 32 can be placed on the other three substrate holders 30. That is, by arranging the dummy substrate 50 in the groove 32 of the substrate holder 30, there is an advantage that film formation can be performed simultaneously on the substrates 40 having different sizes.

  Subsequently, the reaction chamber 11 is evacuated by a vacuum pump (not shown), a film forming gas for growing a growth film on the substrate 40 is introduced into the reaction chamber 11 through the introduction passage 12, and the susceptor 20 is moved by a halogen lamp (not shown). For example, it is heated to 1600 ° C. Thereby, a reaction film is formed on the surface of the substrate 40. For example, a SiC film is formed as the reaction film.

  The reaction film is also formed on the dummy substrate 50 and the one surface 31 of the substrate holder 30. Therefore, the thickness of the dummy substrate 50 may be equal to or greater than the thickness of the substrate 40 having the same size as the size of the groove 32 or the thickness of the substrate 40 having a size smaller than the size of the groove 32.

  In this embodiment, since the ring-shaped dummy substrate 50 is disposed in the groove 32 of the substrate holder 30, the bottom surface of the groove 32 is covered with the dummy substrate 50. For this reason, the dummy substrate 50 serves to prevent the reaction film from being formed on the bottom surface of the groove 32, so that the reaction film may not be removed when the reaction film is formed on the bottom surface of the groove 32. It has become.

  When forming the reaction film in this way, as described above, in each substrate holder 30 shown in FIG. 2, the weight of the substrate 40 having the same size as the groove 32, the weight of the dummy substrate 50, and the groove 32 The sum with the weight of the board | substrate 40 of a size smaller than the size is made the same. For this reason, there is no bias in weight for each substrate holder 30, and the rotation is stable without changing for each substrate holder 30. Therefore, the quality of the growth film does not depend on the substrate size, and a stable growth film can be obtained by repeating a plurality of sheets.

  In this manner, when a film is formed on the substrate 40 having a size smaller than the size of the groove 32 of the substrate holder 30, the reaction film can be formed on the substrate 40 by forming the film using the dummy substrate 50. .

  As described above, in the present embodiment, when the substrate 40 having a size smaller than the size of the groove 32 of the substrate holder 30 is disposed in the groove 32, the dummy substrate 50 is located in the groove 32 where the substrate 40 is not disposed. It is a feature that the substrate 40 is fixed by placing the.

  Thereby, since the position of the substrate 40 can be fixed in the groove 32 by the dummy substrate 50, the substrate 40 can be prevented from sliding in the groove 32 even when the substrate holder 30 rotates. Therefore, stable film formation can be performed on the substrate 40.

  Further, since the groove 32 of the substrate holder 30 is covered with the dummy substrate 50, the problem that the growth film adheres to the bottom surface of the groove 32 does not occur.

  Further, a plurality of substrates 40 of different sizes can be grown simultaneously, and there is no problem that only the substrates 40 of the same size can be grown. That is, there is an advantage that it is not necessary to prepare the substrate holder 30 for each size of the substrate 40, and it is not necessary to replace the substrate holder 30 in the film forming apparatus 1 with one that matches the size of the substrate 40.

(Second Embodiment)
In the present embodiment, only different parts from the first embodiment will be described. In the first embodiment, the substrate holder 30 is provided with one groove 32. However, in the present embodiment, the substrate holder 30 is provided with a plurality of grooves 32.

  FIG. 5 is a schematic cross-sectional view of the film forming apparatus 1 according to this embodiment. As shown in this figure, in the film forming apparatus 1, a susceptor 20 is disposed in a growth vessel 10, and a guide 14 is disposed at a position facing one surface 21 of the susceptor 20. The growth vessel 10 is provided with a reaction gas introduction passage 12 and a discharge passage 13.

  When the reaction gas is introduced into the reaction chamber 11 of the growth vessel 10 through the introduction passage 12, it flows between the guide 14 and one surface 21 of the susceptor 20 and is discharged through the discharge passage 13. ing.

  One groove portion 24 is provided on one surface 21 of the susceptor 20, and a substrate holder 30 is disposed in the groove portion 24. Similar to the first embodiment, the substrate holder 30 rotates around a central axis perpendicular to the one surface 31 of the substrate holder 30. A groove 32 is provided on one surface 31 of the substrate holder 30, and the substrate 40 is disposed in the groove 32.

  FIG. 6 is a plan view of one surface 31 of the substrate holder 30. As shown in this figure, in this embodiment, six grooves 32 are provided on one surface 31 of the substrate holder 30, and the substrate 40 is disposed in each groove 32.

  7A is a cross-sectional view taken along the line CC in FIG. 6, and FIG. 7B is a cross-sectional view taken along the line DD in FIG. As shown in FIG. 7A, when the size of the substrate 40 is substantially the same as the groove 32 of the substrate holder 30, the position of the substrate 40 is fixed by the groove 32. On the other hand, as shown in FIG. 7B, when the size of the substrate 40 is smaller than the size of the groove 32, the dummy substrate 50 is disposed between the side surface 41 of the substrate 40 and the wall surface 33 of the groove 32. Thus, the position of the substrate 40 is fixed. As described above, the positions of the substrates 40 arranged in the respective grooves 32 that are smaller than the size of the grooves 32 are fixed by the dummy substrate 50 as in the first embodiment.

  As described above, even when a plurality of grooves 32 are provided in one substrate holder 30, when the substrate 40 having a size smaller than the size of the groove 32 is disposed in the groove 32, the dummy substrate 50 is used to form the substrate. 40 positions can be fixed. Therefore, it becomes possible to form a film stably on the substrate 40.

  Of course, it is possible to form films on the substrates 40 having different sizes at the same time, and no growth film adheres to the bottom surface of the groove 32.

  The weight of one substrate 40 shown in FIG. 7A is the same as the weight of the two substrates 40 and dummy substrate 50 shown in FIG. 7B. As a result, there is no bias in weight with respect to the rotation shaft located at the center of the substrate holder 30, so that the substrate holder 30 rotates stably. For this reason, the uniformity of the film thickness grown on each substrate 40 varies little.

(Other embodiments)
In each of the above embodiments, SiC has been described as an example of the substrate 40, but the film may be formed on a substrate made of another material.

  In each of the above embodiments, the dummy substrate 50 is made of SiC, but the dummy substrate 50 may be made of SiC that has a surface exposed to the one surface 31 of the substrate holder 30.

  In the first embodiment, six substrate holders 30 are arranged on the susceptor 20, but this is an example, and the number of substrate holders 30 placed on the susceptor 20 may be two or seven or more. . Similarly, in the second embodiment, the number of grooves 32 provided in the substrate holder 30 is not limited to six and may be one or more.

  In each of the above embodiments, from the viewpoint of preventing the growth film from adhering to the bottom surface of the groove 32, it is preferable that the dummy substrate 50 is configured to cover the entire region of the bottom surface of the groove 32 except for the substrate 40. However, if only focusing on the role of fixing the position of the substrate 40, the form of the dummy substrate 50 may be such that the bottom surface of the groove 32 is exposed.

  In each of the above embodiments, the thickness of the dummy substrate 50 is the same as the thickness of the substrate 40 having the same size as the size of the groove 32 or the thickness of the substrate 40 having a size smaller than the size of the groove 32. Here, considering that the combined weight of the substrate 40 and the dummy substrate 50 is the same as the weight of the substrate 40 having the same size as the size of the groove 32, the material of the dummy substrate 50 is more specific than the substrate 40. The dummy substrate 50 is never thinner than the substrate 40 unless it is a heavy material. Therefore, the thickness of the dummy substrate 50 may be equal to or greater than the thickness of the substrate 40 having the same size as the size of the groove 32 or the thickness of the substrate 40 having a size smaller than the size of the groove 32. Even in this case, it is sufficient that the weight of the substrate 40 having the same size as the groove 32 is equal to the sum of the weight of the dummy substrate 50 and the weight of the substrate 40 having a size smaller than the size of the groove 32.

  Here, since the substrate 40 is usually a single crystal, the dummy substrate 50 may be a single crystal, but may be polycrystalline or porous for ease of reproduction and production. If it is porous, the specific gravity is lighter than that of the single crystal.

  In each of the above embodiments, the dummy substrate 50 has a ring shape, but other forms may be used. FIG. 8 is a plan view showing an example of the dummy substrate 50. For example, as shown in FIG. 8A, the inner circumference and the outer circumference of the ring are not concentric circles, and the center of the inner circumference and the center of the outer circumference may not coincide with each other. In particular, in the second embodiment, it is important that there is no weight deviation.

  Further, as shown in FIG. 8B, the dummy substrate 50 may be provided with a rectangular through hole. For example, the dummy substrate 50 can arrange the rectangular substrate 40 in the groove 32 of the substrate holder 30 even after the circular substrate 40 is divided into a rectangular shape. The through hole does not need to have a specific shape, and can be easily manufactured by simply opening a hole by a process such as laser so that an unspecified substrate shape matches the shape. Therefore, a wafer shape having an orientation flat may be used.

  Further, as shown in FIG. 8C, the dummy substrate 50 may be configured by the first component 51 and the second component 52 instead of the single dummy substrate 50. As described above, when the dummy substrate 50 is composed of the plurality of components 51 and 52, a degree of freedom with respect to the shape of the groove 32 and the substrate 40 is created. For this reason, the dummy substrate 50 can be easily fitted into the groove 32, and the substrate 40 can be easily fitted into the dummy substrate 50.

  Of course, in the dummy substrate 50 of the form shown in FIG. 8, the weight of the substrate 40 having the same size as that of the groove 32 is equal to the weight of the dummy substrate 50 and the weight of the substrate 40 having a size smaller than the size of the groove 32. It is the same as the sum.

  On the other hand, as shown in FIGS. 4 and 8, the number of through holes provided in the dummy substrate 50 may not be one. That is, a plurality of through holes may be provided in one dummy substrate 50, and the positions of the plurality of substrates 40 may be fixed by one dummy substrate 50.

It is a schematic sectional drawing of the film-forming apparatus which concerns on 1st Embodiment of this invention. It is the top view which looked at the other surface side from the one surface side of the susceptor. (A) is AA sectional drawing of FIG. 2, (b) is BB sectional drawing of FIG. It is a top view of the dummy substrate which concerns on 1st Embodiment. It is a schematic sectional drawing of the film-forming apparatus which concerns on 2nd Embodiment of this invention. In 2nd Embodiment, it is the top view which looked at one surface of the substrate holder. (A) is CC sectional drawing of FIG. 6, (b) is DD sectional drawing of FIG. In other embodiment, it is the top view which showed an example of the dummy board | substrate.

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 Reaction chamber 30 Substrate holder 31 One surface of substrate holder 32 Groove of substrate holder 33 Wall surface of groove 40 Substrate 41 Side surface of substrate 50 Dummy substrate

Claims (10)

The reaction chamber (11) for heat-treating the substrate (40) is provided with a substrate holder (30) having one surface (31) and having a groove (32) on the one surface (31). 32), the substrate (40) is disposed on the substrate (40) in a state where the substrate holder (30) is rotated around a central axis perpendicular to one surface (31) of the substrate holder (30). A film forming apparatus for forming a film,
The side surface (41) of the substrate (40) and the wall surface (33) of the groove (32) with a substrate (40) having a size smaller than the size of the groove (32) being disposed in the groove (32). And a dummy substrate (50) disposed between the two. A reaction chamber (11) for heat-treating the substrate (40) is provided with a substrate holder (30) having one surface (31) and provided with a plurality of grooves (32) on the one surface (31), The substrate (40) is disposed in each of a plurality of grooves (32), and the substrate holder (30) is rotated about a central axis perpendicular to one surface (31) of the substrate holder (30). A film forming apparatus for forming a film on a substrate (40),
Among the plurality of grooves (32), a substrate (40) having a size smaller than the size of the groove (32) is disposed in the groove (32), and the side surface (41) of the substrate (40) and the substrate (40) A film forming apparatus comprising a dummy substrate (50) disposed between a wall surface (33) of a groove (32).   As for the weight of the dummy substrate (50), the sum of the weight of the substrate (40) having a size smaller than the size of the groove (32) and the weight of the dummy substrate (50) is the same as the size of the groove (32). 3. The film forming apparatus according to claim 1, wherein the weight is the same as the weight of the substrate (40) having a size.   The thickness of the dummy substrate (50) is equal to or greater than the thickness of the substrate (40) having the same size as the size of the groove (32) or smaller than the size of the groove (32). The film forming apparatus according to claim 1, wherein the film forming apparatus is equal to or greater than the above.   5. The film forming apparatus according to claim 1, wherein the dummy substrate has a ring shape.   The film forming apparatus according to claim 5, wherein the center of the hollow portion of the ring-shaped dummy substrate (50) is disposed on the central axis of the substrate holder (30).   The film formation according to any one of claims 1 to 6, wherein a surface of the dummy substrate (50) exposed to one surface (31) of the substrate holder (30) is made of SiC. apparatus.   The film forming apparatus according to claim 1, wherein the dummy substrate is made of SiC.   The film forming apparatus according to claim 1, wherein the substrate is made of SiC.   10. A manufacturing method using the film forming apparatus according to claim 1, wherein a substrate (40) having a size smaller than the size of the groove (32) is disposed in the groove (32). In this state, the film formation is performed with the dummy substrate (50) disposed between the side surface (41) of the substrate (40) and the wall surface (33) of the groove (32). .

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