JP2014107449A - Vapor-phase growth device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vapor-phase growth device capable of reducing in-plane temperature variations of a substrate to be heated while suppressing damage of a substrate position regulation member body for preventing a deposit from being deposited around an orientation flat without depending on a size of an aperture of the substrate including the orientation flat.SOLUTION: The vapor-phase growth device comprises a substrate position regulation member 26 including a substrate position regulation member body 27 and a cut portion which cuts a part of the substrate position regulation member body 27. The substrate position regulation member body 27 includes: a ring-shaped first member 27-1 which is disposed on a top face 21a of a substrate placement member 21 which is positioned outside of a substrate placement surface 21a-1, and surrounds the outer circumference of a substrate 23; and a second member which covers the top face 21a of the substrate placement member 21 positioned between an orientation flat 23-1 of the substrate 23 disposed on the substrate placement surface 21a-1 and the first member 27-1 and is integrated with the first member.

Description

  The present invention relates to a vapor phase growth apparatus, and more particularly to a self-revolving chemical vapor deposition method for growing a gallium nitride (GaN) -based semiconductor layer which is a constituent element of a blue light emitting diode, a green light emitting diode, an ultraviolet laser diode or the like. The present invention relates to an apparatus (MOCVD).

  In a chemical vapor deposition apparatus in which a compound semiconductor layer (for example, a gallium nitride (GaN) -based semiconductor layer) is vapor-grown on a substrate surface using an organic metal and ammonia as a source gas and hydrogen or nitrogen as a carrier gas, the compound semiconductor layer emits light. It is very important to reduce the in-plane distribution of wavelengths.

  In a gallium nitride light emitting device in which gallium nitride (GaN) semiconductor layers (including a light emitting layer) are stacked, a sapphire substrate is used as the substrate. The sapphire substrate is a substrate that is very hard and not easily damaged as compared with a silicon substrate (silicon wafer).

Further, when forming the gallium nitride (GaN) -based semiconductor layer, the substrate is heated to a predetermined temperature.
In the gallium nitride (GaN) -based light emitting device, temperature variation in the substrate surface when forming the light emitting layer is considered as one of the causes of variation in the emission wavelength of the light emitting layer in the surface of the substrate.

By the way, a substrate such as a sapphire substrate or a silicon substrate usually has a notch called an orientation flat (hereinafter referred to as “orientation flat”).
When such a substrate is held in a circular substrate holding recess and a gallium nitride (GaN) -based semiconductor layer is formed, deposits are deposited in a gap formed between the orientation flat of the substrate and the inner peripheral surface of the substrate holding recess. End up.

  Further, in a vapor phase growth apparatus having a mechanism for rotating a susceptor or a substrate (autorotated vapor phase growth apparatus), when the substrate rotates irregularly during the formation of a gallium nitride (GaN) -based semiconductor layer, gallium nitride (GaN) This adversely affects the quality of the semiconductor layer.

  In Patent Document 1, a circular substrate holding recess having a diameter larger than the diameter of the substrate is provided on the upper surface of the susceptor as a means capable of restricting irregular rotation of the substrate, and the cut-off dimension of the cut-off portion (orientation flat) is set. There has been disclosed a vapor phase growth apparatus provided with a substrate rotation prevention protrusion having a corresponding protrusion amount and having a substrate contact portion at the tip of an arc surface.

  However, even if the vapor phase growth apparatus described in Patent Document 1 is used, it is difficult to completely prevent the rotation of the substrate due to the dimensional accuracy of the substrate rotation prevention protrusion and the cut-off portion, the difference in thermal expansion coefficient, and the like. .

  For this reason, for example, when the substrate rotates slightly and the substrate rides on the deposited deposit, even if the thickness of the deposit is about several μm to 10 μm, The surface temperature becomes lower than other parts.

  As a result, the light emitting layer formed on the portion of the substrate on the deposit becomes longer than the emission wavelength of the light emitting layer formed on the portion of the substrate not on the deposit. In other words, the variation in the emission wavelength of the light emitting layer in the substrate surface becomes large.

One technique capable of solving such a problem is a vapor phase growth apparatus disclosed in Patent Document 2.
In Patent Document 2, when the substrate is held in the substrate holding recess, a gap formed between the orientation flat of the substrate and the inner peripheral surface of the substrate holding recess has the same shape as the gap, and A vapor phase growth apparatus in which a fitting member having the same thickness as the thickness is arranged is disclosed.

JP 2005-232488 A JP 2011-192731 A

  The technique disclosed in Patent Document 2 is effective when the diameter (outer diameter size) of the substrate is large (specifically, for example, when the size of the substrate is 6 inches (15.24 cm) or more).

On the other hand, when a substrate having a small diameter (specifically, for example, a substrate smaller than 4 inches (10.16 cm)) is used, the size of the fitting member is small, so that the weight of the fitting member is considerable. It becomes lightweight.
In this case, since the fitting member is blown away by the source gas (gas supplied in a direction parallel to the surface direction of the substrate) supplied into the chamber, the orientation flat of the substrate and the inner peripheral surface of the substrate holding recess During this period, deposits are deposited.

Therefore, in the technique of Patent Document 2, when a GaN-based semiconductor light-emitting device is formed on a substrate having a small aperture, the light-emitting layer formed on the substrate (portion that is difficult to be heated) on the deposit is formed on the deposit. It becomes longer than the emission wavelength of the light emitting layer formed on the portion of the substrate (substrate heated to a predetermined temperature) that is not mounted.
In other words, in the technique of Patent Document 2, when a substrate having a small diameter is heated, temperature variation in the substrate surface becomes large.

  Therefore, the present inventor, as a prior study of the present invention, has a ring-shaped first member surrounding the outer periphery of the substrate (specifically, a sapphire substrate) and a shape similar to the fitting member described in Patent Document 2. A gallium nitride (GaN) -based semiconductor layer was formed on the heated substrate using the substrate position regulating member main body integrated with the second member.

  As a result, even when a small-diameter substrate (4 inch (10.16 cm) sapphire substrate) is used, the gallium nitride (GaN) -based semiconductor layer can be formed without blowing the fitting member by the source gas. It could be confirmed.

However, if the substrate rotates slightly and the two points of the substrate are in contact with the inner wall of the substrate position regulating member main body, if the heating of the substrate having a different thermal expansion coefficient and the substrate position regulating member main body is continued, the substrate that thermally expands New knowledge was obtained that the substrate position regulating member main body was damaged by the stress received from the substrate.
In particular, it has been found that when the substrate is made of a material harder than the material of the substrate position regulating member main body (for example, when the substrate is a sapphire substrate), the substrate position regulating member main body is easily damaged.

  Therefore, the present invention is heated after suppressing damage to the substrate position regulating member main body that suppresses deposits from being deposited around the orientation flat without depending on the size of the substrate having the orientation flat. An object of the present invention is to provide a vapor phase growth apparatus capable of reducing temperature variations in the surface of a substrate.

  In order to solve the above-mentioned problem, according to the invention according to claim 1, a susceptor housed in a chamber, having a penetration portion and configured to be rotatable, and rotatably arranged in the penetration portion. And a substrate mounting member having a disk shape larger than the outer shape of the substrate having the orientation flat and having an upper surface including a substrate mounting surface on which the substrate is mounted, and located outside the substrate mounting surface A ring-shaped first member disposed on the upper surface of the substrate mounting member and surrounding the outer periphery of the substrate, and between the orientation flat of the substrate disposed on the substrate mounting surface and the first member A substrate position restricting member main body comprising a second member integrated with the first member and covering the upper surface of the substrate placing member located at a position, and cutting for cutting a part of the substrate position restricting member main body A substrate position regulating member including a portion and the substrate mounting It is located below the wood through the board mounting member, the vapor deposition apparatus, wherein is provided to have a heating device for heating the substrate.

  Moreover, according to the invention which concerns on Claim 2, the said cutting part is provided in the part spaced apart from the said 2nd member among the said 1st members, The gaseous phase of Claim 1 characterized by the above-mentioned. A growth apparatus is provided.

  According to the invention of claim 3, the upper surface of the substrate position regulating member is constituted by the upper surface of the first member and the upper surface of the second member, and the upper surface of the first member and the first member 3. The gas phase according to claim 1, wherein upper surfaces of the two members are arranged on the same plane, and an upper surface of the substrate position regulating member is flush with an upper surface of the susceptor. A growth apparatus is provided.

  According to a fourth aspect of the present invention, the upper surface of the substrate mounting member is located on the substrate mounting surface and an outer peripheral portion of the substrate mounting member, and the first member is mounted. A ring-shaped first member placement surface, and a second member placement surface located between the orientation flat of the substrate and the first member placement surface, and the substrate placement The substrate placement surface is positioned below the upper surface of the susceptor so that the surface of the substrate placed on the surface is flush with the upper surface of the susceptor, and the upper surface of the substrate position regulating member is 4. The vapor phase growth apparatus according to claim 3, wherein the first and second member mounting surfaces are positioned below the upper surface of the susceptor so as to be flush with the surface of the substrate. Is provided.

  According to the invention of claim 5, the first member mounting surface is positioned below the second member mounting surface and the substrate mounting surface, so that the substrate mounting member The vapor phase growth apparatus according to claim 4, wherein a ring-shaped accommodation portion that accommodates at least a part of the first portion is provided on the outer peripheral portion.

  According to the invention of claim 6, there is provided the vapor phase growth apparatus according to any one of claims 1 to 5, wherein the material of the substrate position regulating member is quartz. The

  Moreover, according to the invention concerning Claim 7, the said board | substrate is a sapphire substrate, The vapor phase growth apparatus of any one of Claims 1 thru | or 6 characterized by the above-mentioned is provided.

  According to the vapor phase growth apparatus of the present invention, the ring-shaped first member disposed on the upper surface of the substrate mounting member located outside the substrate mounting surface and surrounding the outer periphery of the substrate, and the substrate mounting surface A substrate position restricting member main body comprising a second member that covers the upper surface of the substrate mounting member located between the orientation flat of the arranged substrate and the first member and is integrated with the first member. Therefore, even when the source gas is supplied to a substrate having a small diameter (for example, a substrate of 4 inches (10.16 cm) or less), the second portion does not blow off. It can suppress that a deposit accumulates on the upper surface of the substrate mounting member located between the two.

  Moreover, since it becomes possible to suppress the deposition of the deposit, it is possible to suppress a part of the slightly rotating substrate from climbing on the deposit, so that the surface of the substrate can be heated to a uniform temperature. . In other words, temperature variations in the surface of the substrate can be reduced.

  In addition, since the substrate position regulating member includes a cutting portion that cuts a part of the substrate position regulating member main body, for example, the substrate is slightly rotated, and two points of the substrate are in contact with the inner wall of the substrate position regulating member, In this state, when the substrate having a different thermal expansion coefficient and the substrate position regulating member are heated, the stress received by the substrate position regulating member can be relaxed (released), so that the substrate position regulating member is damaged. Can be suppressed.

  That is, according to the vapor phase growth apparatus of the present invention, it is possible to suppress damage to the substrate position restricting member body that suppresses deposits from being deposited around the orientation flat without depending on the size of the substrate having the orientation flat. In addition, temperature variations in the surface of the substrate to be heated can be reduced.

It is sectional drawing which shows typically the principal part of the vapor phase growth apparatus which concerns on embodiment of this invention. FIG. 2 is a plan view of the susceptor, the ring-shaped fixing member with gear, the ring-shaped fixing member with external gear, the substrate, and the substrate position regulating member shown in FIG. 1. It is the top view to which the part enclosed by the area | region B of the structure shown in FIG. 2 was expanded. It is sectional drawing of the AA line direction of the structure shown in FIG. It is the top view to which the board | substrate position control member shown in FIG. 3 was expanded. It is a top view of the ring-shaped member used by the comparative example. It is sectional drawing of the light emitting diode created by the comparative example and the Example. It is a figure which shows the measurement result of PL mapping of the light emitting layer of a comparative example. It is a figure which shows the measurement result of PL mapping of the light emitting layer of an Example.

  Embodiments to which the present invention is applied will be described below in detail with reference to the drawings. Note that the drawings used in the following description are for explaining the configuration of the embodiment of the present invention, and the size, thickness, dimensions, etc. of the respective parts shown in the figure are the dimensional relationships of the actual vapor phase growth apparatus. May be different.

(Embodiment)
FIG. 1 is a cross-sectional view schematically showing a main part of a vapor phase growth apparatus according to an embodiment of the present invention. In FIG. 1, a self-revolving MOCVD (Metal Organic Chemical Vapor Deposition) apparatus is illustrated as an example of the vapor phase growth apparatus 10 of the present embodiment.

  Referring to FIG. 1, a vapor phase growth apparatus 10 of the present embodiment includes a chamber 11, a susceptor 12, a rotating shaft 13, a ring-shaped fixing member 14 with an internal gear, and a ring-shaped fixing member 16 with an external gear. 4, a ball 18 shown in FIG. 4 (not shown in FIG. 1 because it is difficult to show in FIG. 1), a substrate mounting member 21, a substrate position regulating member 26, a gas supply unit 31, A guide member 35, an exhaust unit 43, a heating device 45, and a thermometer 47 are included.

The chamber 11 has a flat cylindrical shape. The chamber 11 houses a susceptor 12, a rotating shaft 13, a ring-shaped fixing member 14 with an internal gear, a substrate mounting member 21, a substrate position regulating member 26, a guide member 35, a heating device 45, a thermometer 47, and the like. .
In the center of the chamber 11, a gas supply part insertion portion 11 </ b> A for guiding a source gas supply port 33 for supplying source gas into the chamber 11 is provided. As a material of the chamber 11, for example, stainless steel can be used.

2 is a plan view of the susceptor, the ring-shaped fixing member with gear, the ring-shaped fixing member with external gear, the substrate, and the substrate position regulating member shown in FIG.
Specifically, FIG. 2 is a plan view of the susceptor 12, the ring-shaped fixing member 14 with gear, the ring-shaped fixing member 16 with external gear, the substrate 23, and the substrate position regulating member 26 from the gas supply unit 31 side shown in FIG. FIG.
In FIG. 2, the same components as those in the vapor phase growth apparatus 10 shown in FIG.

  Referring to FIGS. 1 and 2, the susceptor 12 is disposed inside a ring-shaped fixing member 14 with a gear. The susceptor 12 is rotated (revolved) around the rotation shaft 13 by an internal gear 14B (described later) provided on the ring-shaped fixing member 14 with a gear.

  The susceptor 12 includes a susceptor body 12A and a through portion 12B. The susceptor body 12A has a disk shape. The upper surface 12a of the susceptor body 12A is a flat surface. Source gas is supplied radially from the center of the susceptor body 12A to the upper surface 12a of the susceptor body 12A from the source gas supply port 33 in a direction parallel to the upper surface 12a (horizontal direction).

  The penetration part 12B is provided so as to penetrate the outer peripheral part of the susceptor body 12A. As shown in FIG. 4 to be described later, the penetrating portion 12B has a stepped shape in which the opening diameter increases from the lower surface 12b of the susceptor 12 toward the upper surface 12a.

  Thus, the ring-shaped fixing member with the external gear is formed via the plurality of balls 18 by making the shape of the penetrating portion 12B into a stepped shape in which the opening diameter increases from the lower surface 12b of the susceptor 12 toward the upper surface 12a. 16 can be rotatably supported, and a space for accommodating an external gear portion 16B, which will be described later, constituting the ring-shaped fixing member 16 with an external gear can be provided.

A plurality (10 in the case of FIG. 2) of the through portions 12B are arranged along the outer periphery of the susceptor body 12A at a predetermined interval.
The rotating shaft 13 is accommodated in the chamber 11. The rotating shaft 13 rotatably supports the center of the susceptor 12. One end of the rotating shaft 13 is connected to the center of the bottom of the susceptor 12, and the other end is connected to a rotation driving device (a device (not shown) that rotates the rotating shaft 13).

  FIG. 3 is an enlarged plan view of a portion surrounded by the region B of the structure shown in FIG. In FIG. 3, the same components as those in the structure shown in FIG.

Referring to FIGS. 2 and 3, the ring-shaped fixing member 14 with the internal gear includes a ring-shaped member 14 </ b> A and an internal gear portion 14 </ b> B. The ring-shaped member 14A is a ring-shaped member that can accommodate the susceptor 12 inside. The ring-shaped member 14 </ b> A is disposed so as to surround the outer periphery of the susceptor 12.
The internal gear portion 14 </ b> B is provided on the ring-shaped member 14 </ b> A that faces the outer periphery of the susceptor 12.

  4 is a cross-sectional view of the structure shown in FIG. 2 in the AA line direction. 4, the same components as those shown in FIGS. 1 to 3 are denoted by the same reference numerals.

2 and 4, the ring-shaped fixing member 16 with the external gear includes a ring-shaped member 16 </ b> A and an external gear portion 16 </ b> B. The ring-shaped member 16A is a ring-shaped member whose upper part is a wide shape. The ring-shaped member 16 </ b> A is disposed in the through portion 12 </ b> B via a plurality of balls 18.
The ring-shaped member 16A has an accommodating portion 16A-1 that accommodates the substrate mounting member 21 inside thereof. The accommodating portion 16A-1 has a disk shape. The upper surface 16a of the ring-shaped member 16A is flush with the upper surface 12a of the susceptor 12.

  The external gear portion 16B is provided on the outer periphery of the upper portion of the ring-shaped member 16A. The external gear portion 16B has a shape that meshes with the internal gear portion 14B. Thereby, when the susceptor 12 is rotated, the ring-shaped member 16A rotates (autorotates).

  Referring to FIG. 4, a plurality of balls 18 are arranged between the susceptor 12 and the ring-shaped fixing member 16 with an external gear. The plurality of balls 18 are arranged in a ring shape. The plurality of balls 18 are members for rotating the ring-shaped fixing member 16 with an external gear.

3 and 4, the substrate mounting member 21 has a disk shape larger than the outer shape of the substrate 23 having the orientation flat 23-1. The substrate mounting member 21 is accommodated in the accommodating portion 16A-1 of the ring-shaped fixing member 16 with the disk-shaped external gear and is fixed to the ring-shaped fixing member 16 with the disk-shaped external gear.
That is, the substrate mounting member 21 is disposed in the through portion 12B via the ring-shaped fixing member 16 with a disk-shaped external gear.

  Thereby, when the ring-shaped fixing member 16 with the disk-shaped external gear is rotated by the rotation of the susceptor 12, the substrate mounting member 21 rotates (rotates) together with the ring-shaped fixing member 16 with the disk-shaped external gear. To do.

The substrate mounting member 21 includes an upper surface 21a including a substrate mounting surface 21a-1, a first partial mounting surface 21a-2, and a second partial mounting surface 21a-3, and a storage unit 24. .
The substrate placement surface 21a-1 is a flat surface that comes into contact with the back surface 23b of the substrate 23 having the orientation flat 23-1, and is configured to be slightly larger than the outer diameter of the substrate 23.

  The substrate placement surface 21a-1 is lower than the upper surface 12a of the susceptor 12 so that the surface 23a of the substrate 23 placed on the substrate placement surface 21a-1 is flush with the upper surface 12a of the susceptor 12. Is located. The substrate placement surface 21a-1 has the same shape as the substrate 23 having the orientation flat 23-1.

  Here, the substrate 23 will be described. The substrate 23 has a flat front surface 23a and a back surface 23b. The substrate 23 has an orientation flat 23-1, and the outer periphery excluding the orientation flat 23-1 is circular.

  As the substrate 23, for example, a silicon (Si) substrate, a silicon carbide (SiC) substrate, a GaN substrate, a sapphire substrate, or the like can be used. The size of the substrate 23 is not limited. That is, the size of the substrate 23 may be 4 inches (10.16 cm) or less, or may be larger than 4 inches (10.16 cm).

  The first partial placement surface 21 a-2 is located on the outer periphery of the substrate placement member 21. The first partial placement surface 21 a-2 is a ring-shaped surface constituting the outer peripheral portion of the upper surface 21 a of the substrate position regulating member 21. The first partial placement surface 21 a-2 is a surface on which the first portion 27-1 constituting the substrate position regulating member 26 is placed. The first partial placement surface 21a-2 is in contact with the lower surface of the first portion 27-1.

The first partial placement surface 21a-2 is located below the substrate placement surface 21a-1 and the second partial placement surface 21a-3. Accordingly, a ring-shaped accommodation portion 24 is provided on the outer peripheral portion of the substrate mounting member 21.
The accommodating portion 24 is configured so that the upper surface 26a of the substrate position regulating member 26 is flush with the upper surface 12a of the susceptor 12, the upper surface 16a of the ring-shaped fixing member 16 with external gear, and the surface 23a of the substrate 23. The lower part of the part 27-1 (at least a part of the first part 27-1) is accommodated.

  Thus, by providing the accommodating portion 24 that accommodates the lower portion of the first portion 27-1 of the substrate position regulating member 26 on the outer peripheral portion of the substrate mounting member 21, the position of the first portion 27-1 can be changed. Therefore, it is not necessary to fix (or bond) the substrate position regulating member 26 to the substrate mounting member 21. Thereby, replacement | exchange of the board | substrate position control member 26 can be performed easily.

  In FIG. 4, as an example of the substrate placement member 21 of the present embodiment, the first partial placement surface 21 a is provided below the substrate placement surface 21 a-1 and the second partial placement surface 21 a-3. -2 has been described (in other words, the case where the accommodating portion 24 is provided in the substrate mounting member 21), the substrate mounting surface 21a-1, the second partial mounting surface 21a- 3 and the first partial placement surface 21a-2 may be flush with each other. In this case, the thickness of the substrate position regulating member 26 is the same as the thickness of the substrate 23 (for example, 0.9 mm when the substrate 23 is a sapphire substrate).

The second partial placement surface 21a-3 includes the orientation flat 23-1 of the substrate 23 placed on the substrate placement surface 21a-1 and the first partial placement surface 21a-2 (in other words, the accommodating portion 24). Is located between.
The second partial placement surface 21a-3 is flush with the substrate placement surface 21a-1. The second partial placement surface 21 a-3 is a surface on which the second portion 27-2 constituting the substrate position regulating member 26 is placed.

  FIG. 5 is an enlarged plan view of the substrate position regulating member shown in FIG. In FIG. 5, the same components as those of the substrate position regulating member 26 shown in FIG.

Referring to FIGS. 3 to 5, the substrate position restriction member 26 includes a substrate position restriction member main body 27 and a cutting portion 28.
The substrate position restricting member main body 27 includes a first portion 27-1 and a second portion 27-2. The first portion 27-1 is a ring-shaped member. The first portion 27-1 is accommodated so that the lower surface of the first portion 27-1 and the first partial placement surface 21a-1 (a part of the upper surface 21a of the substrate placement member 21) are in contact with each other. The part 24 is arranged. Thereby, the first portion 27-1 surrounds the outer periphery of the substrate 23.

The first portion 27-1 is a constant width _{W 1.} As the width W ₁ of the first portion 27-1, an optimum width can be selected as appropriate depending on the diameter of the substrate 23.
For example, when the size of the substrate 23 is 4 inches (10.16 cm), the width W ₁ of the first portion 27-1 can be set to 1.75 mm, for example (see FIG. 5).
When the substrate mounting member 21 includes the accommodating portion 24 that accommodates the first portion 27-1, the thickness of the first portion 27-1 is equal to the thickness of the second portion 27-2 and the depth of the accommodating portion 24. And the total value.

  Thereby, the upper surface 26a of the substrate position regulating member 26 is flush with the surface 23a of the substrate 23, the upper surface 16a of the ring-shaped fixing member 16 with external gear, and the upper surface 12a of the susceptor 12 (in other words, the source gas is supplied). The surface on the side of the substrate 23 becomes a flat surface), and there is no member that obstructs the flow of the source gas that is supplied radially from the center of the susceptor 12, so that the surface 23a of the substrate 23 is accurately gallium nitride (GaN). A semiconductor layer can be formed.

  The second portion 27-2 is the upper surface of the substrate mounting member 21 positioned between the orientation flat 23-1 of the substrate 23 and the first member 27-1 disposed on the substrate mounting surface 21a-1. It arrange | positions so that the 2nd partial mounting surface 21a-3 may be covered, and is united with the 1st member 27-1.

When the second partial placement surface 21a-3 is flush with the substrate placement surface 21a-1, the thickness of the second portion 27-2 is the thickness of the substrate 23 (for example, the substrate When 23 is a sapphire substrate, it can be equal to 0.9 mm).
Further, in the substrate position restricting member main body 27, the portion in which the second portion 27-2 and the first portion 27-1 are integrated is considerably wider than the width W1 of the _first portion 27-1. It is made into a shape.

  When the gallium nitride (GaN) based semiconductor layer is formed on the surface 23 a of the substrate 23 heated by the heating device 45 using the vapor phase growth apparatus 10, the second portion 27-2 is mounted on the second partial mount. It functions as a member for preventing deposits (not shown) from depositing on the mounting surface 21a-3.

  As described above, the second member 27-2 covering the second partial placement surface 21a-3, which is a part of the upper surface 21a of the substrate placement member 21, and the ring-shaped first surrounding the outer periphery of the substrate 23. By integrating the member 27-1, the source gas having a high flow rate in a direction parallel to the surface 23a of the substrate 23 with respect to a substrate having a small diameter (for example, a substrate of 4 inches (10.16 cm) or less) can be obtained. Even when supplied, the second portion 27-2 is positioned between the first member 27-1 and the orientation flat 23-1 of the substrate 23 because the lightweight second portion 27-2 does not blow off. It can suppress that a deposit accumulates on 21a-3.

Thereby, even when the substrate 23 rotates with respect to the substrate mounting member 21, the substrate 23 does not run on the deposit, so that the surface of the substrate 23 can be heated at a uniform temperature. In other words, temperature variations in the surface of the substrate 23 can be reduced.
Therefore, when a gallium nitride-based light emitting device including a light emitting layer is formed on the surface 23a of the substrate 23 using the vapor phase growth apparatus 10 of the present embodiment, variation in the light emission wavelength of the light emitting layer in the plane of the substrate 23 is achieved. Can be reduced.

For example, quartz can be used as the material of the substrate position restricting member main body 27 having the above-described configuration.
Thus, by using quartz having excellent heat resistance as the material of the substrate position regulating member main body 27, even when the substrate 23 is heated at a high temperature (for example, 1000 to 1200 ° C.), the substrate position regulating member main body 27 is damaged. Can be suppressed.

Referring to FIGS. 3 and 5, one cutting portion 28 is provided in the first portion 27-1. Thereby, the cutting unit 28 divides the first portion 27-1.
Thus, by providing one cutting part 28 that divides the first portion 27-1, the substrate 23 rotates, and the corner of the orientation flat 23-1 is positioned in the vicinity of the cutting part 28 or the dividing part 28. When the first portion 27-1 comes into contact with the first portion 27-1 and receives stress from the substrate 23, the first portion 27-1 can be displaced in a direction to release the stress.

Thereby, it can suppress that the board | substrate position control member main body 27 is damaged by the stress received from the board | substrate 23. FIG.
In particular, when a hard and strong substrate (for example, a sapphire substrate) is used as the substrate 23, the substrate position restricting member main body 27 is easily damaged, which is effective.

  Moreover, although the cutting part 28 may be provided in the part by which the 1st part 27-1 and the 2nd part 27-2 of the board | substrate position control member main body 27 were united, as shown in FIG.3 and FIG.5. In addition, it may be provided in the first portion 27-1 (in other words, the portion where the second portion 27-2 of the substrate position regulating member main body 27 is not provided) spaced apart from the second member 27-2.

  In other words, the cutting portion 28 is narrower than the substrate position restricting member main body 27 in which the first portion 27-1 and the second portion 27-2 are integrated, and only the first portion 27-1. It is good to provide in the comprised board | substrate position control member main body 27. FIG.

  Thus, by providing the cutting portion 28 in the narrow substrate position restricting member main body 27 constituted only by the first portion 27-1, the substrate 23 rotates slightly, and the orientation flat 23-1 of the substrate 23 is rotated. When the two corners are brought into contact with the substrate position restricting member main body 27, the substrate position restricting member main body 27 is easily displaced, so that the stress received from the substrate 23 can be easily relaxed.

Moreover, as shown in FIGS. 3 and 5, the number of cutting portions 28 provided in the substrate position regulating member main body 27 is preferably one.
For example, when two cutting portions 28 are provided in the vicinity of the first portion 27-1, the substrate position regulating member main body 27 (the first portion 27-1) located between the cutting portions 28 and separated is separated. Since the weight is light, there is a risk of blowing away when the source gas is supplied.
As described above, when a part of the substrate position restricting member main body 27 is blown off, the substrate position restricting member main body 27 does not function as a guide for restricting the position of the substrate 23.

Further, when the two cutting portions 28 are arranged apart from each other, the substrate position regulating member main body 27 located between the cutting portions 28 is unlikely to be blown off by the source gas, but the substrate position regulating member main body 27 is positioned at the position of the substrate 23. Will not function as a guide to restrict
A similar problem occurs when three or more cutting portions 28 are provided.

The width W ₂ of the cutting portion 28, depending on the width W ₁ or the like of the size and the first portion 27-1 of the diameter of the substrate 23, it is possible to appropriately select the optimum width.
For example, if the size of substrate 23 is 4 inches (10.16 cm), and width _{W 1} of the first portion 27-1 is 1.75 mm, the width _{W 2} of the cutting unit 28 is, for example, 0.5 Although it can be appropriately selected within the range of 2 mm, 1 mm is preferable.

Referring to FIG. 1, the gas supply unit 31 is inserted into the gas supply unit insertion unit 11 </ b> A of the chamber 11. The gas supply unit 31 includes source gas supply ports 33 that supply source gas radially with respect to a direction parallel to the upper surface 12 a of the susceptor 12.
When a sapphire substrate is used as the substrate 23 and a gallium nitride (GaN) -based semiconductor layer is formed on the surface 23a of the substrate 23, trimethylgallium, which is an organic metal compound containing gallium, and ammonia are used as source gases. Gas containing can be used.

  The guide member 35 includes a first guide member 35-1 and a second guide member 35-2. The first guide member 35-1 is heated between the lower surface of the susceptor 12 where the rotary shaft 13 is not provided, the lower surface of the ring-shaped fixing member 14 with gears, and the lower surface 21b of the substrate mounting member 21. It arrange | positions under the susceptor 12, the ring-shaped fixing member 14 with a gear, and the board | substrate mounting member 21 so that the heating apparatus accommodating part 36 which can accommodate the apparatus 45 is formed.

In the first guide member 35-1, a portion located on the outer peripheral edge of the geared ring-shaped fixing member 14 is provided with an inert gas deriving portion 38 for deriving the inert gas from the heating device housing portion 36. It has been.
The second guide part 35-2 is arranged around the rotary shaft 13 so that an inert gas introduction part 41 for introducing an inert gas is formed between the second guide part 35-2 and the rotary shaft 13. . The upper end of the second guide part 35-2 is integrated with the first guide part 35-1.

  The exhaust part 43 is provided near the inner wall of the chamber 11. The exhaust unit 43 is a gas exhaust path for exhausting unnecessary source gas and the inert gas derived from the inert gas deriving unit 38 to the outside of the chamber 11.

The heating device 45 is accommodated in the heating device accommodating portion 36 and is disposed below the susceptor 12, below the ring-shaped fixing member 14 with gears, and the substrate placement member 21.
The heating device 45 is composed of a plurality of heaters, for example. The plurality of heaters are configured to be independently controllable. The plurality of heaters heat the entire substrate 23 placed on the substrate placement surface 21a-1 through the substrate placement member 21 so that the temperature is uniform.

  A sapphire substrate is used as the substrate 23, and a gallium nitride (GaN) semiconductor layer is formed on the surface 23a of the substrate 23 using a source gas containing trimethylgallium, which is an organic metal compound containing gallium, and ammonia. When doing, the heating apparatus 45 heats the board | substrate 23 so that it may become predetermined | prescribed temperature within the temperature range of 450-1200 degreeC, for example.

  A plurality of thermometers 47 are provided in the heating device housing portion 36. The plurality of thermometers 47 are arranged in the radial direction of the chamber 11. The thermometer 47 is for measuring the temperature in the heating device housing portion 36. Based on the measured temperature result, the temperature heated by the heating device 45 is adjusted.

  According to the vapor phase growth apparatus of the present embodiment, the second member 27-2 that covers the second partial placement surface 21a-3, which is a part of the upper surface 21a of the substrate placement member 21, and the substrate 23 By integrating the ring-shaped first member 27-1 surrounding the outer periphery, the substrate 23 with a small diameter (for example, a substrate of 4 inches (10.16 cm) or less) is parallel to the surface 23a of the substrate 23. Even when a raw material gas having a fast flow rate is supplied in any direction, the lightweight second portion 27-2 will not blow off, so the gap between the first member 27-1 and the orientation flat 23-1 of the substrate 23 is eliminated. It can suppress that a deposit accumulates on the 2nd partial mounting surface 21a-3 located.

Thereby, even when the substrate 23 rotates with respect to the substrate mounting member 21, the substrate 23 does not run on the deposit, so that the surface of the substrate 23 can be heated at a uniform temperature. In other words, temperature variations in the surface of the substrate 23 can be reduced.
Therefore, when a gallium nitride-based light emitting device including a light emitting layer is formed on the surface 23a of the substrate 23 using the vapor phase growth apparatus 10 of the present embodiment, variation in the light emission wavelength of the light emitting layer in the plane of the substrate 23 is achieved. Can be reduced.

Further, by providing one cutting portion 28 for dividing the first portion 27-1, the substrate 23 rotates, and the corner of the orientation flat 23-1 is positioned in the vicinity of the cutting portion 28 or the dividing portion 28. When the first portion 27-1 is in contact with the portion 27-1 and receives stress from the substrate 23, the first portion 27-1 can be displaced in a direction to release the stress.
Thereby, it can suppress that the board | substrate position control member main body 27 is damaged by the stress received from the board | substrate 23. FIG.
In particular, when a hard and strong substrate (for example, a sapphire substrate) is used as the substrate 23, the substrate position restricting member main body 27 is easily damaged, which is effective.

  That is, according to the vapor phase growth apparatus 10 of the present embodiment, it is possible to suppress deposits from being deposited around the orientation flat 23-1 without depending on the size of the diameter of the substrate 23 having the orientation flat 23-1. In addition, it is possible to reduce in-plane temperature variation of the heated substrate 23 while suppressing damage to the substrate position regulating member main body 27 to be performed.

  The preferred embodiments of the present invention have been described in detail above, but the present invention is not limited to such specific embodiments, and within the scope of the present invention described in the claims, Various modifications and changes are possible.

(Comparative example)
FIG. 6 is a plan view of the ring-shaped member used in the comparative example. 6, the same components as those of the substrate position regulating member 26 shown in FIG.
In the comparative example, the light emitting diode 53 shown in FIG. 7 is formed on the surface 23a of the substrate 23 by the vapor phase growth apparatus 10 shown in FIG. 1 having the continuous ring-shaped member 52 shown in FIG. Manufactured.
As the substrate 23, a sapphire substrate having a diameter of 4 inches (10.16 cm), a thickness of 0.9 mm, and an orientation flat 23-1.
As the vapor phase growth apparatus 10, an MOCVD apparatus (model number: UR25K) manufactured by Taiyo Nippon Sanso Corporation was used.

Here, with reference to FIG. 6, the structure of the ring-shaped member 52 used by the comparative example is demonstrated. The ring-shaped member 52 is configured similarly to the first member 27-1 shown in FIG. 5 except that the cutting portion 28 shown in FIG. 5 is not provided.
That is, in the comparative example, the light emitting diode 53 was manufactured with the second partial mounting surface 21 a-3 exposed from the ring-shaped member 52.

Ring-shaped member 52 is a constant width W _1. The lower part of the ring-shaped member 52 has a shape that can be accommodated in the accommodating portion 24 shown in FIG. The width W ₁ of the ring-shaped member 52 was 1.75 mm. Further, quartz was used as the material of the ring-shaped member 52.

FIG. 7 is a cross-sectional view of the light emitting diodes produced in the comparative example and the example. In FIG. 7, the same components as those of the substrate 23 shown in FIG.
As shown in FIG. 7, in the comparative example, first, the ud-GaN layer 54 having a thickness of 1 μm was formed on the surface 23 a of the substrate 23 while the sapphire substrate as the substrate 23 was heated to 1050 ° C. At this time, ammonia and trimethylgallium (TMG) were used as source gases.

Next, an Si dope-GaN layer 55 having a thickness of 4 μm was formed on the ud-GaN layer 54 while maintaining the temperature of the substrate 23 at 1050 ° C. At this time, ammonia, TMG, and monosilane were used as source gases.
Next, a stacked body in which an InGaN layer having a thickness of 2.5 nm and a GaN layer having a thickness of 12.5 nm are stacked on the Si dope-GaN layer 55 while maintaining the temperature of the substrate 23 at 800 ° C. The light emitting layer 56 was formed by laminating six layers of (MQW). At this time, ammonia, TMG, and trimethylindium (TMI) were used as source gases.

Next, an Mg—AlGaN layer 57 having a thickness of 20 nm was formed on the light emitting layer 56 while maintaining the temperature of the substrate 23 at 1000 ° C. At this time, ammonia, TMG, trimethylaluminum (TMA), and cyclopentadienylmagnesium (Cp2Mg) were used as source gases.
Next, an Mg dope-GaN layer 58 having a thickness of 100 nm was formed on the Mg—AlGaN layer 57 while maintaining the temperature of the substrate 23 at 1000 ° C. At this time, ammonia, TMG, and Cp2Mg were used as source gases.
As a result, the light emitting diode 53 in which the ud-GaN layer 54, the Si dope-GaN layer 55, the light emitting layer 56, the Mg-AlGaN layer 57, and the Mg dope-GaN layer 58 were sequentially laminated was manufactured.

Then, PL mapping was created by irradiating the light emitting layer 56 of the light emitting diode 53 of the comparative example with a laser beam by a photoluminescence method (Photoluminescence Spectroscopy).
At this time, RPM-Σ manufactured by ACCENT was used as an automatic photoluminescence mapping system.
The result is shown in FIG. FIG. 8 is a diagram illustrating a measurement result of PL mapping of the light emitting layer of the comparative example.

(Example)
In the embodiment, by using the vapor phase growth apparatus 10 shown in FIG. 1 having the substrate position regulating member 26 shown in FIG. 5, the light emitting diode 53 shown in FIG. Manufactured.
That is, in the example, the light-emitting diode 53 was manufactured in a state where the second partial placement surface 21a-3 was covered with the substrate position regulating member 26.

Quartz was used as the material of the substrate position regulating member 26. The width _{W 1} of the first portion 27-1 and 1.75 mm, the width _{W 2} of the cutting portion 28 provided on the first portion 27-1 and a 1 mm (see Fig. 5). As the vapor phase growth apparatus 10, the same apparatus as that used in the comparative example was used.
As the substrate 23, a sapphire substrate having a diameter of 4 inches (10.16 cm), a thickness of 0.9 mm, and an orientation flat 23-1.

After manufacturing the light emitting diode 53, the PL mapping was created by irradiating the light emitting layer 56 of the light emitting diode 53 of the example with a laser beam by a photoluminescence method.
The result is shown in FIG. FIG. 9 is a diagram illustrating a measurement result of PL mapping of the light emitting layer of the example.

  In addition, when the said light emitting diode 53 was manufactured repeatedly, the damage of the board | substrate position control member 26 by the board | substrate 23 was not confirmed.

(Measurement result of PL mapping of light emitting layer of comparative example and example)
7 and 8, from the measurement result of the PL mapping of the comparative example, the wavelength of the light emitting layer 56 is longer around the orientation flat 23-1 of the substrate 23 as compared with other portions. From this, it was found that the periphery of the orientation flat 23-1 of the substrate 23 was not heated to a predetermined temperature.
In addition, it was confirmed that the wavelength variation of the light emitting layer 56 in the surface of the substrate 23 was considerably large when the light emitting wavelength of the light emitting layer 56 positioned around the orientation flat 23-1 became a long wavelength.

  This is because a deposit is formed on the second partial mounting surface 21a-3 (see FIG. 4), and the substrate 23 slightly rotates, so that the substrate 23 rides on the deposit, This is probably because the portion of the deposit that was not heated to the desired temperature was not heated.

7 and 9, from the PL mapping measurement results of the example, the variation of the light emitting layer 56 in the surface of the substrate 23 is very small (specifically, the wavelength variation is 1% (σ)), and the substrate It was confirmed that the entire 23 was heated uniformly.
This is because the second partial placement surface 21a-3 (see FIG. 4) is covered with the substrate position regulating member 26, and therefore no deposit is formed on the second partial placement surface 21a-3. It is thought to be due to.

  The present invention is not dependent on the size of the substrate having the orientation flat, and suppresses the damage of the substrate position regulating member that suppresses the deposition of the deposit around the orientation flat, and then the surface of the substrate to be heated. The present invention can be applied to a vapor phase growth apparatus capable of reducing the temperature variation in the inside.

DESCRIPTION OF SYMBOLS 10 ... Vapor growth apparatus, 11 ... Chamber, 11A ... Gas supply part insertion part, 12 ... Susceptor, 12a, 16a, 21a, 26a ... Upper surface, 12A ... Susceptor main body, 12b, 21b ... Lower surface, 12B ... Penetration part, 13 Rotating shaft, 14 ... Ring-shaped fixing member with gear, 14A, 16A ... Ring-shaped member, 14B ... Internal gear portion, 16 ... Ring-shaped fixing member with external gear, 16A-1, 24 ... Housing portion, 16B ... External gear Part, 18 ... ball, 21 ... substrate placement member, 21a-1 ... substrate placement surface, 21a-2 ... first partial placement surface, 21a-3 ... second partial placement surface, 23 ... substrate, 23a ... front surface, 23b ... back surface, 23-1 ... orientation flat, 24 ... housing part, 26 ... substrate position regulating member, 27 ... substrate position regulating member body, 27-1 ... first part, 27-2 ... second 28, cutting part, 31 ... gas supply part 33 ... Raw material gas supply port, 35 ... Guide member, 35-1 ... First guide member, 35-2 ... Second guide member, 36 ... Heating device accommodating portion, 38 ... Inert gas lead-out portion, 41 ... Inactive Active gas introduction part, 43 ... exhaust part, 45 ... heating device, 47 ... thermometer, 52 ... ring member, 53 ... light emitting diode, 54 ... ud-GaN layer, 55 ... Si dope-GaN layer, 56 ... light emitting layer 57 ... Mg-AlGaN layer, 58 ... Mg dope-GaN layer, W ₁ , W ₂ ... width

Claims (7)

A susceptor housed in a chamber, having a through-hole and configured to be rotatable;
A substrate mounting member that is rotatably disposed in the penetrating portion, has a disk shape larger than the outer shape of the substrate having an orientation flat, and has an upper surface including a substrate mounting surface on which the substrate is mounted;
A ring-shaped first member disposed on an upper surface of the substrate mounting member located outside the substrate mounting surface and surrounding an outer periphery of the substrate, and the substrate disposed on the substrate mounting surface A substrate position regulating member main body comprising a second member that covers the upper surface of the substrate mounting member located between the orientation flat and the first member and is integrated with the first member, and the substrate position A substrate position regulating member including a cutting part for cutting a part of the regulating member main body;
A heating device that is disposed below the substrate mounting member and that heats the substrate via the substrate mounting member;
A vapor phase growth apparatus comprising:   2. The vapor phase growth apparatus according to claim 1, wherein one of the cutting portions is provided in a portion of the first member that is separated from the second member. The upper surface of the substrate position regulating member is constituted by the upper surface of the first member and the upper surface of the second member,
The upper surface of the first member and the upper surface of the second member are arranged on the same plane,
The vapor phase growth apparatus according to claim 1, wherein an upper surface of the substrate position regulating member is flush with an upper surface of the susceptor. The upper surface of the substrate mounting member is the substrate mounting surface, and a ring-shaped first member mounting surface that is positioned on the outer periphery of the substrate mounting member and on which the first member is mounted. And a second member placement surface located between the orientation flat of the substrate and the first member placement surface,
The substrate placement surface is positioned below the upper surface of the susceptor so that the surface of the substrate placed on the substrate placement surface is flush with the upper surface of the susceptor;
The first and second member mounting surfaces are located below the upper surface of the susceptor so that the upper surface of the substrate position regulating member is flush with the surface of the substrate. Item 4. The vapor phase growth apparatus according to Item 3.   Since the first member mounting surface is positioned below the second member mounting surface and the substrate mounting surface, at least one of the first portions is provided on the outer periphery of the substrate mounting member. 5. The vapor phase growth apparatus according to claim 4, further comprising a ring-shaped accommodation portion that accommodates the portion.   6. The vapor phase growth apparatus according to claim 1, wherein a material of the substrate position regulating member is quartz.   The vapor phase growth apparatus according to any one of claims 1 to 6, wherein the substrate is a sapphire substrate.

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