JP2009130257A - Semiconductor manufacturing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing device capable of performing uniform treatment. <P>SOLUTION: A treatment device includes a susceptor 3, a support member, a support part 4, and flow passages 26, 27 as gas inflow suppressing parts. The susceptor 3 holds a substrate 15 as a treatment subject treated by reaction gas, and can rotate. The support member supports an outer circumference part of the susceptor 3. The support part 4 is arranged in a part where the outer circumference part of the susceptor 3 and the support member face with each other. The flow passages 26, 27 as the gas inflow suppressing parts suppress inflow of the reaction gas in a region where the support part 4 is positioned. Concretely, heights T1, T2 and lengths L1, L2 of the flow passages 26, 27 are set so that distribution resistance of the reaction gas becomes sufficiently high. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a semiconductor manufacturing apparatus, and more particularly to a semiconductor manufacturing apparatus including a susceptor that holds a processing target and can rotate.

  2. Description of the Related Art Conventionally, a semiconductor manufacturing apparatus such as a vapor phase growth apparatus including a rotatable susceptor that holds a substrate as a processing target is known (see, for example, Patent Document 1).

In the semiconductor manufacturing apparatus disclosed in Patent Document 1, a support shaft is connected to the center of the lower surface of a disk-shaped susceptor, and the susceptor is rotatable by rotating the support shaft. A heater for heating the substrate held by the susceptor is disposed on the lower surface side of the susceptor. The susceptor is disposed in an opening formed in the bottom wall of the reaction chamber. On the outer periphery of the susceptor, a flange extending from the opening of the bottom wall to the outer peripheral surface is formed, and by forming the flange, the reaction gas leaks from the outer periphery of the susceptor to the outside of the reaction chamber. Can be suppressed.
JP-A-2005-243766

  The conventional semiconductor manufacturing apparatus as described above has the following problems. In other words, when the susceptor is enlarged in order to increase the size of the substrate to be processed or to increase the number of substrates mounted on the susceptor, the susceptor is supported by the support shaft connected to the central portion of the susceptor as in the past. If supported, it may be difficult to keep the susceptor surface horizontal during rotation of the susceptor. This is because the susceptor is supported only by the support shaft arranged at the center of the susceptor, and when the susceptor is enlarged, the surface of the susceptor is caused by processing accuracy and bending at the joint between the support shaft and the susceptor. This is considered to be caused by a slight inclination from the horizontal. When such inclination of the susceptor occurs, the distance between the susceptor and the heater is locally different, and a local temperature difference occurs in the susceptor heated by the heater. As a result, it becomes difficult to uniformly heat the substrate held by the susceptor. As a result, there is a problem that it is difficult to perform uniform processing on the substrate (for example, to form a film having a uniform film quality).

  The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a semiconductor manufacturing apparatus capable of performing uniform processing.

  A semiconductor manufacturing apparatus according to the present invention includes a susceptor, a support member, a support part, and a gas inflow suppression part. The susceptor holds an object to be processed by the reaction gas and is rotatable. The support member supports the outer periphery of the susceptor. The support portion is disposed at a portion where the outer peripheral portion of the susceptor faces the support member. The gas inflow suppression part suppresses the inflow of the reaction gas to the region where the support part is located.

  In this way, since the susceptor is rotatably supported by the support member via the support portion disposed on the outer peripheral portion of the susceptor, when the susceptor is enlarged, the direction of the susceptor surface is defined in the design ( For example, it can be reliably maintained in the horizontal direction). That is, it is possible to suppress the susceptor surface from deviating from the direction defined at the time of design (inclining the susceptor) as in the case where the susceptor is supported by the support shaft only at the center of the susceptor. For this reason, since it can suppress that the temperature of a susceptor changes locally due to the inclination of a susceptor (temperature uniformity falls), the processing conditions (for example, film-forming processing etc.) with respect to a processing object are set. It can be made uniform. Therefore, it can suppress that the uniformity of the process with respect to a process target object deteriorates.

  In addition, since the inflow of the reaction gas from the space facing the upper surface of the susceptor (inside the reaction chamber) to the support portion can be suppressed by the gas inflow suppression portion, precipitates or the like are generated on the support portion due to the reaction gas. It is possible to suppress the formation of foreign matter. Therefore, since the possibility that the operation of the support portion is hindered by such foreign matter can be reduced, a semiconductor manufacturing apparatus that operates stably can be obtained.

  Thus, according to the present invention, the direction of the surface of the susceptor can be reliably maintained in the direction specified at the time of design, and the inflow of the reaction gas to the region where the support portion disposed on the outer peripheral portion is located is suppressed. In addition, it is possible to prevent foreign matters from being formed in the region due to the reaction gas. Therefore, a semiconductor device capable of performing uniform processing with stable operation can be obtained.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following drawings, the same or corresponding parts are denoted by the same reference numerals, and description thereof will not be repeated.

(Embodiment 1)
FIG. 1 is a schematic cross-sectional view showing a first embodiment of a processing apparatus which is an example of a semiconductor manufacturing apparatus according to the present invention. FIG. 2 is a partial enlarged cross-sectional schematic view of the processing apparatus shown in FIG. FIG. 3 is a schematic plan view of a susceptor constituting the processing apparatus shown in FIG. A first embodiment of a processing apparatus according to the present invention will be described with reference to FIGS.

  As shown in FIGS. 1 to 3, the processing apparatus 1 according to the present invention includes a reaction tube 5, a rotatable susceptor 3 installed in an opening formed in the bottom wall of the reaction tube 5, and a reaction tube. A reaction gas supply member 9 for supplying the reaction gas into the interior of the reactor 5 and an exhaust member 11 for exhausting the reaction gas, atmosphere gas, and the like after being used in the reaction process from the interior of the reaction tube 5 to the outside. Prepare. Further, the processing apparatus 1 includes a heater 7 for heating the substrate 15 that is a processing target mounted on the susceptor 3, and a motor 20 that is a driving member for rotating the susceptor 3.

  The reaction tube 5 is made of a material such as quartz, and has a cross-sectional shape in a direction perpendicular to the direction in which the reaction gas flows, for example, a rectangular shape. The susceptor 3 has a circular shape as shown in FIG. 3, and a plurality of recesses 13 for mounting the substrate 15 are formed on the upper surface of the susceptor 3. The number of the concave portions 13 may be three as shown in FIG. 3, but may be any other number, for example, four or five or more. Further, the recesses 13 may be arranged so as to be symmetric with respect to the central portion of the susceptor 3 or may be arranged so that the distances between the plurality of recesses 13 are equally spaced. .

  A rotating shaft 17 is connected to the central portion on the back side of the susceptor 3. The lower end of the rotating shaft 17 is connected to the motor 20 via a joint 19. The driving force generated by the motor 20 is transmitted to the susceptor 3 through the joint 19 and the rotating shaft 17. The structure of the connecting portion between the susceptor 3 and the rotating shaft 17 can be an arbitrary structure. For example, the susceptor 3 and the rotary shaft 17 are joined by a brazing material or the like, or a convex portion is provided on one of the susceptor 3 or the rotary shaft 17 at a portion where the susceptor 3 and the rotary shaft 17 are opposed to each other. A convex portion corresponding to the convex portion or a convex portion (for example, a concave portion or a convex portion in which the rotation of the rotating shaft 17 is transmitted to the susceptor 3 by contacting the convex portion with the side surface); The rotation of the rotating shaft 17 may be transmitted to the susceptor 3 by engaging the recess and the recess or the protrusion and the protrusion. In other words, the connecting portion between the susceptor 3 and the rotating shaft 17 is only required to transmit the rotational force of the rotating shaft 17 to the susceptor 3, and the susceptor 3 and the rotating shaft 17 may not be fixed.

  A support member 21 for supporting the susceptor 3 is installed on the lower surface of the outer peripheral portion of the susceptor 3. In order to fix the position of the support member 21, a pedestal 22 is connected to the outer peripheral end of the support member 21. The gantry 22 is connected and fixed to a base member of the processing apparatus 1 (not shown) or another fixed member. The planar shape of the support member 21 is an annular shape, and an opening having a diameter smaller than the width of the susceptor 3 is formed at the center. At the end on the inner peripheral side of the upper surface of the support member 21 is a support that is a protrusion that contacts the lower surface of the susceptor 3 and supports the susceptor 3 from the lower surface side in a region facing the susceptor 3 as shown in FIG. Part 4 is formed. The upper surface of the support portion 4 is in contact with the lower surface of the susceptor 3. The planar shape of the upper surface of the support portion 4 (the surface that contacts the lower surface of the susceptor 3) is annular as shown in FIG.

  The support 4 supports the susceptor 3 so that the susceptor 3 rotates smoothly with respect to the support member 21 when the susceptor 3 rotates by the driving force of the motor 20. Therefore, the surface (upper surface) of the support portion 4 that contacts the susceptor 3 is finished so that the susceptor 3 can slide. The shape of the upper surface of the support portion 4 may be a flat shape as shown in FIG. 2, but may be any other shape (for example, a convex shape or a hemispherical shape). Moreover, as long as the susceptor 3 can rotate smoothly as the support part 4, you may use another structure. For example, a bearing member can be disposed as the support portion 4.

  Next, the operation of the processing apparatus 1 will be briefly described. In the processing apparatus 1, a substrate 15 that is a processing target is disposed in the recess 13 of the susceptor 3. Then, after the susceptor 3 on which the substrate 15 is mounted is rotatably installed in an opening formed in the bottom wall of the reaction tube 5, the inside of the reaction tube 5 is set to a predetermined pressure. The setting of the pressure may be performed, for example, by exhausting the atmospheric gas from the reaction tube 5 by the exhaust member 11. Then, after the inside of the reaction tube 5 reaches a predetermined set pressure, the heater 7 is operated to heat the substrate 15 to a predetermined temperature (processing temperature) via the susceptor 3. At this time, the susceptor 3 is rotated via the joint 19 and the rotating shaft 17 by simultaneously driving the motor 20. A predetermined amount of reaction gas is supplied from the reaction gas supply member 9 to the inside of the reaction tube 5 while the temperature of the substrate 15 reaches the processing temperature. In this state, the reaction gas is decomposed in a region facing the substrate 15, and a film (for example, a film made of gallium nitride (GaN)) using the reaction gas component as a raw material is formed on the surface of the substrate 15. The gas used for the film formation reaction is exhausted from the reaction tube 5 by the exhaust member 11. In this way, a predetermined film can be formed on the surface of the substrate 15.

  In the processing apparatus 1 described above, when the film forming process as described above is performed on the substrate 15, the reaction gas flowing inside the reaction tube 5 is supported through the flow paths 26 and 27 shown in FIG. 2. The possibility of flowing into the region where 4 is located is conceivable. However, in the processing apparatus shown in FIGS. 1 to 3, by adjusting the height T2 and length L2 of the flow path 26 and the height T1 and length L1 of the flow path 27, the flow path 26 is adjusted. , 27 is made sufficiently high in ventilation resistance. For this reason, the quantity of the reaction gas which flows into the area | region where the support part 4 is arrange | positioned from the inside of the reaction tube 5 can be made very small. For example, the height T1 of the flow path 27 can be set to, for example, 0.2 mm or more and 1 mm or less, more preferably 0.4 mm or more and 0.6 mm or less. Further, the length L1 of the flow path 27 may be, for example, 3 mm or more and 9 mm or less, more preferably 5.4 mm or more and 5.6 mm or less. Also, the height T2 of the flow path 26 can be set to, for example, 1 mm or more and 3 mm or less, more preferably 1.85 mm or more and 2.15 mm or less. Further, the length L2 of the flow path 26 can be set to, for example, 1 mm or more and 6 mm or less, more preferably 3.4 mm or more and 3.6 mm or less. In order to increase the flow resistance of the flow paths 26 and 27, the heights T1 and T2 of the flow paths 26 and 27 described above are smaller and the lengths L1 and L2 of the flow paths 26 and 27 are longer. Although it is preferable, due to processing of the susceptor 3 and assembly accuracy, when the susceptor 3 rotates, there is a need to allow the susceptor 3 to rotate stably without coming into contact with other members. Therefore, the lower limits of the heights T1 and T2 of the flow paths 26 and 27 described above are determined in consideration of the above margin.

  This reduces the possibility that precipitates or the like are formed on the surface of the susceptor 3 or the support member 21 in the vicinity of the support portion 4 due to the reaction gas flowing into the region where the support portion 4 is located. it can. For this reason, it is possible to prevent the rotation of the susceptor from being hindered due to the formation of the precipitate. Moreover, in the processing apparatus 1 shown in FIGS. 1-3, since the support part 4 is arrange | positioned and the susceptor 3 is supported in the outer peripheral part of the susceptor 3, the susceptor 3 is supported only in the center part. As compared with the above, the level of the surface of the susceptor 3 can be maintained with high accuracy.

(Embodiment 2)
FIG. 4 is a schematic sectional view showing Embodiment 2 of the processing apparatus according to the present invention. FIG. 5 is a partial enlarged cross-sectional schematic view of the processing apparatus shown in FIG. A second embodiment of the processing apparatus according to the present invention will be described with reference to FIGS.

  The processing apparatus shown in FIGS. 4 and 5 basically has the same structure as the processing apparatus shown in FIGS. 1 to 3, but the structure of the portion that supports the susceptor 3 by the support member 21 on the outer peripheral side is different. ing. Specifically, in the processing apparatus shown in FIGS. 4 and 5, a flange-shaped extension extending to the outer peripheral side below the outer peripheral portion of the susceptor 3 (region located outside the wall portion of the reaction tube 5). A standing portion 30 is formed. A support member 21 having a circular planar shape is disposed at a position facing the lower surface of the extending portion 30. The support member 21 is supported by the gantry 22 at the outer periphery.

  At the inner peripheral side end portion of the upper surface of the support member 21 (surface facing the susceptor 3), a support portion 4 that contacts the lower surface of the susceptor 3 and supports the susceptor 3 from the lower surface side at a position facing the susceptor 3. Is formed. The upper surface of the support portion 4 is in contact with the lower surface of the susceptor 3. The planar shape of the upper surface of the support portion 4 (the surface in contact with the lower surface of the susceptor 3) is an annular shape, similar to the upper surface of the support portion 4 shown in FIG.

  Also in the processing apparatus 1 shown in FIGS. 4 and 5, in order to prevent the reaction gas from flowing from the inside of the reaction tube 5 into the region where the support portion 4 is arranged, the flow resistance of the flow paths 26 to 29 is set to a predetermined value. Value. Specifically, for example, the height T1 of the flow path 27 can be set to, for example, 0.2 mm to 1 mm, more preferably 0.4 mm to 0.6 mm. The length L1 of the flow path 27 may be, for example, 1 mm to 3 mm, more preferably 1.9 mm to 2.1 mm. Further, the height T2 of the flow path 29 can be set to 0.1 mm or more and 3 mm or less, more preferably 0.4 mm or more and 0.6 mm or less. Further, the length L2 of the flow path 29 can be set to, for example, 1 mm or more and 10 mm or less, more preferably 4.6 mm or more and 4.8 mm or less.

  Also, the height T3 of the flow path 28 can be set to, for example, 0.2 mm to 1 mm, more preferably 0.4 mm to 0.6 mm. Moreover, the length L3 of the flow path 28 can be, for example, 5 mm or more and 20 mm or less, more preferably 13.85 mm or more and 14.15 mm or less. Moreover, also about the flow path 26, height T4 can be 0.1 mm or more and 3 mm or less, for example, More preferably, it is 1.4 mm or more and 1.6 mm or less. The length L4 of the flow path 26 can be set to, for example, 1 mm or more and 6 mm or less, more preferably 3.4 mm or more and 3.6 mm or less.

  Even if it does in this way, the effect similar to the processing apparatus shown in FIG. 1 and FIG. 2 can be acquired.

  Hereinafter, although there is a part which overlaps with embodiment mentioned above, the characteristic structure of this invention is enumerated. A processing apparatus 1 as a semiconductor manufacturing apparatus according to the present invention includes a susceptor 3, a support member 21, a support part 4, and flow paths 26 to 29 as gas inflow suppression parts. The susceptor 3 holds a substrate 15 as a processing object to be processed with a reactive gas, and is rotatable. The support member 21 supports the outer peripheral portion of the susceptor 3. The support portion 4 is disposed at a portion where the outer peripheral portion of the susceptor 3 and the support member 21 face each other. The flow paths 26 to 29 as the gas inflow suppressing part suppress the inflow of the reaction gas to the region where the support part 4 is located. Specifically, the height and length of the flow paths 26 to 29 are set so that the flow resistance of the reaction gas is sufficiently high.

  In this way, since the susceptor 3 is rotatably supported by the support member 21 via the support portion 4 positioned on the outer peripheral portion of the susceptor 3, the susceptor 3 surface direction is designed when the susceptor 3 is enlarged. It can be reliably maintained in the direction defined at times, specifically in the horizontal direction. That is, it is possible to suppress the susceptor surface from being tilted from the direction defined at the time of design, as in the case where the susceptor is supported by the support shaft only at the central portion of the susceptor 3. For this reason, since it can suppress that the temperature of the susceptor 3 changes locally due to the inclination of the susceptor 3 (temperature uniformity decreases), the processing conditions of the film forming process on the substrate 15 can be made uniform. Can do. Therefore, it can suppress that the uniformity of the process with respect to the board | substrate 15 deteriorates. As a result, a uniform film can be formed on the surface of the substrate 15.

  Further, the flow channels 26 to 29 as the gas inflow suppressing portions can suppress the inflow of the reaction gas from the space facing the upper surface of the susceptor 3 (inside the reaction tube 5) to the portion where the support portion 4 is disposed. Therefore, it can suppress that foreign materials, such as a precipitate, form in the part in which the support part 4 is arrange | positioned due to the said reaction gas. Accordingly, since the possibility that the sliding operation of the susceptor 3 with respect to the support portion 4 is hindered by such foreign matter can be reduced, the processing apparatus 1 that operates stably can be obtained.

  In the processing apparatus 1, the support member 21 may include an extending portion that extends to the lower surface of the outer peripheral portion of the susceptor 3 as shown in FIGS. 1 and 2. The support portion 4 may be disposed between the extending portion of the support member 21 and the outer peripheral portion of the susceptor 3. The gas inflow suppressing portion is defined by the lower surface portion between the outer peripheral end of the susceptor and the portion where the support portion 4 is disposed, and the surface of the support member 21 facing the lower surface portion of the lower surface of the outer peripheral portion of the susceptor 3. The flow path 27 may be included as a gap.

  In this case, the flow path 27 up to the portion where the support portion 4 is disposed can be used as a gas inflow suppressing portion. Further, by changing the length L1 and / or the height T1 of the flow path 27, the flow resistance of the reaction gas in the flow path 27 can be adjusted.

  The processing apparatus 1 may further include a reaction tube 5 as a reaction chamber including a wall portion having an opening in which the susceptor 3 is disposed. The gas inflow suppressing portion may include a flow path 26 as an opening inner gap defined by the end face of the outer peripheral portion of the susceptor 3 and the inner wall of the opening. In this case, since the flow path 26 can also be used as a gas inflow suppression part, the inflow of the reaction gas to the part in which the support part 4 is arrange | positioned can be suppressed more reliably.

  The creeping distance in the cross section shown in FIG. 2 of the gas inflow suppressing portion in the processing apparatus 1 shown in FIGS. 1 to 3 (the sum of the length L1 of the flow path 27 and the length L2 of the flow path 26 in FIG. The length from the upper end of the outer peripheral end surface of the susceptor to the portion where the support portion 4 is disposed in the radial cross section, or the creeping distance of the outer peripheral end surface and the lower surface portion in the radial cross section of the susceptor) is, for example, 4 mm or more and 15 mm or less, More preferably, it may be 8.8 mm or more and 9.2 mm or less. In this case, the inflow of the reaction gas to the portion where the support portion 4 is disposed via the flow paths 26 and 27 can be reliably suppressed.

  In the processing apparatus 1, the susceptor 3 may include an extending portion 30 as a flange portion that protrudes outward at the outer peripheral portion of the susceptor 3 and faces the support member 21, as shown in FIGS. 4 and 5. . The support portion 4 may be disposed between the extending portion 30 of the susceptor 3 and the support member 21. The gas inflow suppressing portion includes a flange portion surface (a lower surface of the extending portion 30) between the outer peripheral end of the extending portion 30 of the susceptor 3 and a portion where the support portion 4 is disposed, and the lower portion of the extending portion 30. A flow path 27 is included as a gap defined by the surface and the surface of the support member 21 facing the surface.

  In this case, the flow path 27 up to the portion where the support portion 4 is disposed can be used as a gas inflow suppressing portion. In addition, by changing the location of the support part 4 and changing the length L1 of the flow path 27, the flow resistance of the reaction gas in the flow path 27 constituting the gas inflow suppression part can be adjusted. it can. Further, the flow resistance in the flow path 27 may be adjusted by changing the height T1 of the gap.

  Further, since the support portion 4 is disposed on the extending portion 30 formed on the outer peripheral portion of the susceptor 3, the cross section of the susceptor 3 (in the direction perpendicular to the surface on which the substrate 15 is mounted in the susceptor 3). Thus, in the cross section passing through the central portion of the susceptor 3, the distance between the support portions 4 positioned at the opposing extension portions 30 can be made larger than the width of the susceptor when the extension portions 30 are not formed. For this reason, the precision which maintains the direction of the susceptor 3 surface in a predetermined direction can be improved rather than the case where the support part 4 is arrange | positioned inside the extension part 30. FIG.

  As shown in FIGS. 4 and 5, the processing apparatus 1 further includes a reaction tube 5 as a reaction chamber including a wall portion having an opening in which the susceptor 3 is disposed. The extending part 30 is arranged so as to extend from the opening part to the outer peripheral side of the wall part. The gas inflow suppression part is a flange upper side gap (flow path 26, flow path) defined by the upper surface of the extension part 30 and the end surface connected to the extension part 30 of the susceptor 3, and the outer peripheral surface of the wall part and the inner wall of the opening. 28). In addition, the gas inflow suppressing portion may include a flange portion end surface side gap (flow path 29) between the outer peripheral end surface of the extending portion 30 and the surface of the support member. In this case, since the flow paths 26, 28, and 29 can also be used as the gas inflow suppressing part, the inflow of the reaction gas to the portion where the support part 4 is disposed can be more reliably suppressed.

  The portion where the bearing member is arranged from the upper end of the outer peripheral end surface of the susceptor 3 in the length of the gas inflow suppressing portion (that is, the sum of the lengths L1 to L4 of the flow paths 26 to 29 in FIG. 5 or the cross section in the susceptor radial direction) The creepage distance of the surface of the susceptor 3 up to 8 mm to 39 mm, and more preferably 23.75 mm to 24.65 mm. In this case, the inflow of the reaction gas to the portion where the support portion 4 is disposed through the gap can be reliably suppressed.

  Moreover, in the said processing apparatus 1, although the flow paths 26-29 are extended linearly in a susceptor cross section as shown in FIG.2 and FIG.5, you may make the flow paths 26-29 bend. For example, by forming a convex portion or a concave portion on the surface of the susceptor 3, the support member 21, or the reaction tube 5 (surface constituting the side walls of the flow paths 26 to 29), the configuration shown in FIG. 2 or FIG. Alternatively, the creepage distance of the flow paths 26 to 29 may be increased.

  In the above-described embodiment, the processing apparatus 1 having the structure in which the substrate 15 is disposed on the upper surface of the so-called susceptor 3 has been described. However, the present invention is so-called face-down (the susceptor 3 is disposed on the upper wall of the reaction tube 5). In addition, the present invention can be applied to a processing apparatus in which a substrate is held on the lower surface side of the susceptor 3.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  The present invention is particularly advantageously applied to a semiconductor manufacturing apparatus including a susceptor, and particularly to a semiconductor manufacturing apparatus including a rotatable susceptor and performing processing in a state where a processing object is heated via the susceptor.

It is a cross-sectional schematic diagram which shows Embodiment 1 of the processing apparatus which is an example of the semiconductor manufacturing apparatus by this invention. It is a partial expanded cross-section schematic diagram of the processing apparatus shown in FIG. It is a plane schematic diagram of the susceptor which comprises the processing apparatus shown in FIG. It is a cross-sectional schematic diagram which shows Embodiment 2 of the processing apparatus by this invention. It is a partial expanded cross section schematic diagram of the processing apparatus shown in FIG.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Processing apparatus, 3 susceptor, 4 support part, 5 reaction tube, 7 heater, 9 reaction gas supply member, 11 exhaust member, 13 recessed part, 15 substrate, 17 rotating shaft, 19 joint, 20 motor, 21 support member, 22 mount , 26-29 channel, 30 extension.

Claims (5)

A rotatable susceptor that holds an object to be processed by the reaction gas;
A support member that supports the outer periphery of the susceptor;
A support portion disposed at a portion where the outer peripheral portion of the susceptor and the support member face each other;
A semiconductor manufacturing apparatus comprising: a gas inflow suppression unit that suppresses inflow of the reaction gas into a region where the support unit is located. The support member includes an extending portion that extends to a lower surface of an outer peripheral portion of the susceptor,
The support part is disposed between an extension part of the support member and an outer peripheral part of the susceptor,
The gas inflow suppressing portion includes a lower surface portion between an outer peripheral end of the susceptor and a portion where the support portion is disposed, and a surface of the support member facing the lower surface portion of the lower surface of the outer peripheral portion of the susceptor. The semiconductor manufacturing apparatus according to claim 1, comprising a gap defined by: Further comprising a reaction chamber including a wall having an opening in which the susceptor is disposed;
The semiconductor manufacturing apparatus according to claim 2, wherein the gas inflow suppressing portion includes a gap defined by an end surface of an outer peripheral portion of the susceptor and an inner wall of the opening. The susceptor includes a flange portion that protrudes outward at an outer peripheral portion of the susceptor and faces the support member;
The support portion is disposed between a flange portion of the susceptor and the support member,
The gas inflow suppression portion is defined by a flange portion surface between an outer peripheral end of the flange portion of the susceptor and a portion where the support portion is disposed, and a surface of the support member facing the flange portion surface. The semiconductor manufacturing apparatus according to claim 1, comprising a gap. Further comprising a reaction chamber including a wall having an opening in which the susceptor is disposed;
The flange portion is arranged so as to extend from the opening to the outer peripheral side of the wall portion,
The gas inflow suppressing portion includes a gap defined by an upper surface of the flange portion and an end surface connected to the flange portion of the susceptor, and an outer peripheral surface of the wall portion and an inner wall of the opening. The semiconductor manufacturing apparatus as described.

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