JP2010010478A - 光電変換装置、光電変換装置の製造方法及び撮像装置 - Google Patents

光電変換装置、光電変換装置の製造方法及び撮像装置 Download PDF

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JP2010010478A
JP2010010478A JP2008169181A JP2008169181A JP2010010478A JP 2010010478 A JP2010010478 A JP 2010010478A JP 2008169181 A JP2008169181 A JP 2008169181A JP 2008169181 A JP2008169181 A JP 2008169181A JP 2010010478 A JP2010010478 A JP 2010010478A
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photoelectric conversion
forming
conversion device
layer
upper electrode
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JP2010010478A5 (enExample
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Yoshinori Maehara
佳紀 前原
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Fujifilm Corp
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Fujifilm Corp
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Priority to JP2008169181A priority Critical patent/JP2010010478A/ja
Priority to US12/490,920 priority patent/US8193542B2/en
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Publication of JP2010010478A5 publication Critical patent/JP2010010478A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H10K39/32—Organic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Light Receiving Elements (AREA)
JP2008169181A 2008-06-27 2008-06-27 光電変換装置、光電変換装置の製造方法及び撮像装置 Withdrawn JP2010010478A (ja)

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JP2008169181A JP2010010478A (ja) 2008-06-27 2008-06-27 光電変換装置、光電変換装置の製造方法及び撮像装置
US12/490,920 US8193542B2 (en) 2008-06-27 2009-06-24 Photoelectric apparatus and imaging apparatus including the same

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JP2008169181A JP2010010478A (ja) 2008-06-27 2008-06-27 光電変換装置、光電変換装置の製造方法及び撮像装置

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JP2010010478A5 JP2010010478A5 (enExample) 2011-03-17

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KR101108517B1 (ko) * 2010-02-01 2012-01-30 한국과학기술원 열구동 전자종이화면 장치 및 그 제조방법
JP2012038784A (ja) * 2010-08-03 2012-02-23 Brother Ind Ltd フォトダイオードアレイ、およびフォトダイオードアレイの製造方法
KR20140020674A (ko) * 2012-08-10 2014-02-19 엘지디스플레이 주식회사 유기발광소자 및 그 제조방법
JP2015056554A (ja) * 2013-09-12 2015-03-23 ソニー株式会社 固体撮像素子および製造方法、並びに電子機器
KR20150099730A (ko) * 2012-12-26 2015-09-01 소니 주식회사 고체 촬상 소자 및 이것을 구비한 고체 촬상 장치
WO2016185914A1 (ja) * 2015-05-19 2016-11-24 ソニーセミコンダクタソリューションズ株式会社 半導体装置、固体撮像装置、電子機器、および半導体装置の製造方法
KR20170104086A (ko) * 2016-03-04 2017-09-14 삼성디스플레이 주식회사 표시 장치
JP2017174903A (ja) * 2016-03-22 2017-09-28 キヤノン株式会社 光電変換装置、及び撮像システム
JP2021527235A (ja) * 2018-06-04 2021-10-11 イソルグ 画像センサ及びディスプレイスクリーンを備えたデバイス
JPWO2020188959A1 (ja) * 2019-03-20 2021-10-14 株式会社ジャパンディスプレイ 検出装置

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KR102197069B1 (ko) 2014-02-04 2020-12-30 삼성전자 주식회사 이미지 센서 및 이미지 처리 장치
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CN104795433B (zh) * 2015-05-08 2016-07-13 京东方科技集团股份有限公司 显示面板及其制作方法、显示装置
US10636826B2 (en) * 2015-10-26 2020-04-28 Sony Semiconductor Solutions Corporation Solid-state imaging device, manufacturing method thereof, and electronic device
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CN106784389A (zh) * 2017-02-17 2017-05-31 京东方科技集团股份有限公司 一种复合透明电极、有机发光二极管及其制备方法
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KR101108517B1 (ko) * 2010-02-01 2012-01-30 한국과학기술원 열구동 전자종이화면 장치 및 그 제조방법
WO2011155121A1 (ja) * 2010-06-08 2011-12-15 パナソニック株式会社 固体撮像装置及びその製造方法
JP2012038784A (ja) * 2010-08-03 2012-02-23 Brother Ind Ltd フォトダイオードアレイ、およびフォトダイオードアレイの製造方法
KR101936774B1 (ko) * 2012-08-10 2019-01-09 엘지디스플레이 주식회사 유기발광소자 및 그 제조방법
KR20140020674A (ko) * 2012-08-10 2014-02-19 엘지디스플레이 주식회사 유기발광소자 및 그 제조방법
KR20150099730A (ko) * 2012-12-26 2015-09-01 소니 주식회사 고체 촬상 소자 및 이것을 구비한 고체 촬상 장치
KR102163307B1 (ko) * 2012-12-26 2020-10-08 소니 주식회사 고체 촬상 소자 및 이것을 구비한 고체 촬상 장치
JP2015056554A (ja) * 2013-09-12 2015-03-23 ソニー株式会社 固体撮像素子および製造方法、並びに電子機器
US9666643B2 (en) 2013-09-12 2017-05-30 Sony Semiconductor Solutions Corporation Solid state image sensor, production method thereof and electronic device
US12035549B2 (en) 2013-09-12 2024-07-09 Sony Semiconductor Solutions Corporation Solid state image sensor, production method thereof and electronic device
US10622563B2 (en) 2015-05-19 2020-04-14 Sony Semiconductor Solutions Corporation Semiconductor device, solid-state imaging device, electronic apparatus, and manufacturing method of semiconductor device
WO2016185914A1 (ja) * 2015-05-19 2016-11-24 ソニーセミコンダクタソリューションズ株式会社 半導体装置、固体撮像装置、電子機器、および半導体装置の製造方法
KR20170104086A (ko) * 2016-03-04 2017-09-14 삼성디스플레이 주식회사 표시 장치
KR102610027B1 (ko) * 2016-03-04 2023-12-11 삼성디스플레이 주식회사 표시 장치
JP2017174903A (ja) * 2016-03-22 2017-09-28 キヤノン株式会社 光電変換装置、及び撮像システム
JP2021527235A (ja) * 2018-06-04 2021-10-11 イソルグ 画像センサ及びディスプレイスクリーンを備えたデバイス
JP7320006B2 (ja) 2018-06-04 2023-08-02 イソルグ 画像センサ及びディスプレイスクリーンを備えたデバイス
JPWO2020188959A1 (ja) * 2019-03-20 2021-10-14 株式会社ジャパンディスプレイ 検出装置
JP7220775B2 (ja) 2019-03-20 2023-02-10 株式会社ジャパンディスプレイ 検出装置

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US20090322923A1 (en) 2009-12-31

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