JP2010010357A - 紫外線センサ - Google Patents

紫外線センサ Download PDF

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Publication number
JP2010010357A
JP2010010357A JP2008167378A JP2008167378A JP2010010357A JP 2010010357 A JP2010010357 A JP 2010010357A JP 2008167378 A JP2008167378 A JP 2008167378A JP 2008167378 A JP2008167378 A JP 2008167378A JP 2010010357 A JP2010010357 A JP 2010010357A
Authority
JP
Japan
Prior art keywords
ultraviolet
optical fiber
photodetector
single crystal
lamp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008167378A
Other languages
English (en)
Japanese (ja)
Inventor
Takeshi Seki
武 瀬木
Keiji Kaneda
恵司 金田
Masanobu Hidaka
正伸 日高
Shigeo Ohira
重男 大平
Naoki Arai
直樹 新井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujikura Ltd
Nippon Light Metal Co Ltd
Toyo Tokai Aluminum Hanbai KK
Original Assignee
Fujikura Ltd
Nippon Light Metal Co Ltd
Toyo Tokai Aluminum Hanbai KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujikura Ltd, Nippon Light Metal Co Ltd, Toyo Tokai Aluminum Hanbai KK filed Critical Fujikura Ltd
Priority to JP2008167378A priority Critical patent/JP2010010357A/ja
Priority to TW98121360A priority patent/TW201009306A/zh
Priority to PCT/JP2009/061614 priority patent/WO2009157512A1/fr
Publication of JP2010010357A publication Critical patent/JP2010010357A/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4206—Optical features
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/4214—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Optical Couplings Of Light Guides (AREA)
  • Lasers (AREA)
JP2008167378A 2008-06-26 2008-06-26 紫外線センサ Pending JP2010010357A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008167378A JP2010010357A (ja) 2008-06-26 2008-06-26 紫外線センサ
TW98121360A TW201009306A (en) 2008-06-26 2009-06-25 Ultraviolet sensor
PCT/JP2009/061614 WO2009157512A1 (fr) 2008-06-26 2009-06-25 Capteur de rayonnement ultraviolet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008167378A JP2010010357A (ja) 2008-06-26 2008-06-26 紫外線センサ

Publications (1)

Publication Number Publication Date
JP2010010357A true JP2010010357A (ja) 2010-01-14

Family

ID=41444575

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008167378A Pending JP2010010357A (ja) 2008-06-26 2008-06-26 紫外線センサ

Country Status (3)

Country Link
JP (1) JP2010010357A (fr)
TW (1) TW201009306A (fr)
WO (1) WO2009157512A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023249347A1 (fr) * 2022-06-21 2023-12-28 아주대학교산학협력단 Capteur optique utilisant de la flexoélectricité, et dispositif de diagnostic biologique le comprenant

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011176090A (ja) * 2010-02-24 2011-09-08 Nippon Light Metal Co Ltd 紫外線センサ、およびその製造方法
CN102455213A (zh) * 2010-10-30 2012-05-16 比亚迪股份有限公司 光照传感器及雨量传感器
JP6097989B2 (ja) * 2012-04-24 2017-03-22 並木精密宝石株式会社 酸化ガリウム単結晶、及び、酸化ガリウム単結晶基板
WO2018103647A1 (fr) * 2016-12-08 2018-06-14 西安电子科技大学 Procédé de fabrication de photodétecteur à ultraviolets à base de matériau de ga2o3
CN107515365B (zh) * 2017-06-29 2019-12-13 成都旭光光电技术有限责任公司 一种紫外光敏管的配对方法及设备
CN111477699B (zh) * 2020-04-16 2022-03-29 杭州紫芯光电有限公司 基于α-Ga2O3/TiO2异质结的日盲紫外探测器及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074105U (ja) * 1983-10-28 1985-05-24 株式会社日立製作所 光フアイバ採光用広角レンズ
JPS62153806A (ja) * 1985-12-27 1987-07-08 Hitachi Tokyo Electron Co Ltd 光フアイバおよび光フアイバ加工方法ならびに光フアイバ加工装置
JP3753508B2 (ja) * 1996-07-31 2006-03-08 日本電信電話株式会社 光路変換素子の作製方法、および光路変換素子作製用のブレード
JP2000057451A (ja) * 1998-08-06 2000-02-25 Babcock Hitachi Kk 火炎監視装置
JP2008068203A (ja) * 2006-09-14 2008-03-27 Toshiba Corp 紫外線消毒システム
JP2008282881A (ja) * 2007-05-08 2008-11-20 Nippon Light Metal Co Ltd 紫外線センサ及びその製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023249347A1 (fr) * 2022-06-21 2023-12-28 아주대학교산학협력단 Capteur optique utilisant de la flexoélectricité, et dispositif de diagnostic biologique le comprenant
KR20230174446A (ko) * 2022-06-21 2023-12-28 아주대학교산학협력단 변전 효과를 이용한 광센서 및 이를 구비하는 바이오 진단 장치
KR102689128B1 (ko) * 2022-06-21 2024-07-25 아주대학교산학협력단 변전 효과를 이용한 광센서 및 이를 구비하는 바이오 진단 장치

Also Published As

Publication number Publication date
WO2009157512A1 (fr) 2009-12-30
TW201009306A (en) 2010-03-01

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