JP2009544772A - インデノフルオレンとチオフェンのコポリマー - Google Patents
インデノフルオレンとチオフェンのコポリマー Download PDFInfo
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- JP2009544772A JP2009544772A JP2009521125A JP2009521125A JP2009544772A JP 2009544772 A JP2009544772 A JP 2009544772A JP 2009521125 A JP2009521125 A JP 2009521125A JP 2009521125 A JP2009521125 A JP 2009521125A JP 2009544772 A JP2009544772 A JP 2009544772A
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- 125000003710 aryl alkyl group Chemical group 0.000 description 4
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- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 4
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- 0 CC*C1(*)c2c(C(*)(*)c3cc(C)ccc3-3)c-3ccc2-c2ccc(C)cc12 Chemical compound CC*C1(*)c2c(C(*)(*)c3cc(C)ccc3-3)c-3ccc2-c2ccc(C)cc12 0.000 description 3
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- YJVFFLUZDVXJQI-UHFFFAOYSA-L palladium(ii) acetate Chemical compound [Pd+2].CC([O-])=O.CC([O-])=O YJVFFLUZDVXJQI-UHFFFAOYSA-L 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 125000002255 pentenyl group Chemical group C(=CCCC)* 0.000 description 1
- 125000005981 pentynyl group Chemical group 0.000 description 1
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 1
- 125000005005 perfluorohexyl group Chemical group FC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)* 0.000 description 1
- 125000005007 perfluorooctyl group Chemical group FC(C(C(C(C(C(C(C(F)(F)F)(F)F)(F)F)(F)F)(F)F)(F)F)(F)F)(F)* 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 150000008379 phenol ethers Chemical class 0.000 description 1
- 230000026731 phosphorylation Effects 0.000 description 1
- 238000006366 phosphorylation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229910000160 potassium phosphate Inorganic materials 0.000 description 1
- 235000011009 potassium phosphates Nutrition 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000002568 propynyl group Chemical group [*]C#CC([H])([H])[H] 0.000 description 1
- CPNGPNLZQNNVQM-UHFFFAOYSA-N pteridine Chemical compound N1=CN=CC2=NC=CN=C21 CPNGPNLZQNNVQM-UHFFFAOYSA-N 0.000 description 1
- 150000003216 pyrazines Chemical class 0.000 description 1
- PBMFSQRYOILNGV-UHFFFAOYSA-N pyridazine Chemical group C1=CC=NN=C1 PBMFSQRYOILNGV-UHFFFAOYSA-N 0.000 description 1
- 150000003222 pyridines Chemical class 0.000 description 1
- 150000003230 pyrimidines Chemical class 0.000 description 1
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 125000000168 pyrrolyl group Chemical group 0.000 description 1
- JWVCLYRUEFBMGU-UHFFFAOYSA-N quinazoline Chemical compound N1=CN=CC2=CC=CC=C21 JWVCLYRUEFBMGU-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 230000003381 solubilizing effect Effects 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 125000003107 substituted aryl group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000006277 sulfonation reaction Methods 0.000 description 1
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 description 1
- 125000004434 sulfur atom Chemical group 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 1
- APBDREXAUGXCCV-UHFFFAOYSA-L tetraethylazanium;carbonate Chemical compound [O-]C([O-])=O.CC[N+](CC)(CC)CC.CC[N+](CC)(CC)CC APBDREXAUGXCCV-UHFFFAOYSA-L 0.000 description 1
- 150000003536 tetrazoles Chemical class 0.000 description 1
- GVIJJXMXTUZIOD-UHFFFAOYSA-N thianthrene Chemical compound C1=CC=C2SC3=CC=CC=C3SC2=C1 GVIJJXMXTUZIOD-UHFFFAOYSA-N 0.000 description 1
- 150000003577 thiophenes Chemical class 0.000 description 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical compound CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 1
- RCHUVCPBWWSUMC-UHFFFAOYSA-N trichloro(octyl)silane Chemical compound CCCCCCCC[Si](Cl)(Cl)Cl RCHUVCPBWWSUMC-UHFFFAOYSA-N 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-M triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-M 0.000 description 1
- 125000005580 triphenylene group Chemical group 0.000 description 1
- COIOYMYWGDAQPM-UHFFFAOYSA-N tris(2-methylphenyl)phosphane Chemical compound CC1=CC=CC=C1P(C=1C(=CC=CC=1)C)C1=CC=CC=C1C COIOYMYWGDAQPM-UHFFFAOYSA-N 0.000 description 1
- 125000002221 trityl group Chemical group [H]C1=C([H])C([H])=C([H])C([H])=C1C([*])(C1=C(C(=C(C(=C1[H])[H])[H])[H])[H])C1=C([H])C([H])=C([H])C([H])=C1[H] 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 239000000080 wetting agent Substances 0.000 description 1
- 150000003738 xylenes Chemical class 0.000 description 1
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Abstract
【選択図】なし
Description
特に、このようなコポリマーは、良好な加工性を有すると同時に驚異的に高い電荷キャリヤー移動度と高い酸化安定性を有することから、トランジスタ及びOLEDのような電子素子での半導体材料としての使用のために適することが見出された。
A、B及びB’は、互いに独立しており、互いに独立した並列の出現の場合には、二価の基であり、好ましくは、-CR1R2-、-NR1-、-PR1-、-O-、-S-、-SO-、-SO2-、-CO-、-CS-、-CSe-、-P(=O)R1-、-P(=S)R1-及びSiR1R2-から選ばれ、
R1及びR2は、互いに独立して同一であるか異なり、H、ハロゲン、-CN、-NC、-NCO、-NCS、-OCN、-SCN、-C(=O)NR0R00、-C(=O)X、-C(=O)R0、-NH2、-NR0R00、-SH、-SR0、-SO3H、-SO2R0、-OH、-NO2、-CF3、-SF5、随意に置換されたシリル、若しくは随意に置換され、随意に1以上のヘテロ原子を含む1〜40個のC原子を有するカルビル或いはヒドロカルビルから選択される基であり、随意に、基R1及びR2は、それらが結合するフルオレン部分と共にスピロ環基を形成し、
Xは、ハロゲンであり、
R0及びR00は、互いに独立して、H又は随意に1以上のヘテロ原子を含む随意に置換されたカルビル或いはヒドロカルビル基であり、
各gは、独立して、0若しくは1であり、同じ副単位中の対応するhは、反対の0及び1であり、
mは、1以上の整数であり、
Ar1及びAr2は、互いに独立して、随意に置換され、インデノフルオレン基の7,8-位或いは8,9-位で随意に縮合された単核或いは多核アリール若しくはヘテリアリールであり、
a及びbは、互いに独立して、0若しくは1であり、
T1及びT2は、互いに独立して、随意に1以上の基R3により置換されるチオフェン、セレノフェン、チエノ[2,3b]チオフェン、チエノ[3,2b]チオフェン、ジチエノチオフェン及びピロールから選ばれ、
R3は、互いに独立した並列の出現の場合には、ハロゲン、-CN、-NC、-NCO、-NCS、-OCN、-SCN、-C(=O)NR0R00、-C(=O)X、-C(=O)R0、-NH2、-NR0R00、-SH、-SR0、-SO3H、-SO2R0、-OH、-NO2、-CF3、-SF5、随意に置換されたシリル若しくは随意に置換され、随意に1以上のヘテロ原子を含むカルビル或いはヒドロカルビルであり、随意に、2個のR3基は、隣接する位置で、結合する環と共にポリ環状基を形成し、
Ar3及びAr4は、互いに独立して、随意に置換され、隣接するチオフェン或いはセレノフェン基の1方或いは両方の2,3-位で、随意に縮合された単核或いは多核アリール若しくはヘテリアリールであり、
c及びeは、互いに独立して、0、1、2、3若しくは4で、1<c+e≦6であり、
d及びfは、互いに独立して、0、1、2、3若しくは4であり、
但し、式Iが、6,6-12,12-テトラアルキルトランスインデノフルオレンを意味するならば、式IIは、非置換或いはアルキル化ジ、ター或いはクオーターチオフェン若しくはジチエノ[3,2-:2’,3’-e]ピリジンとは異なる。
他に指示がなければ、Ar1、R1等のような基若しくは添字は、並列して存在する場合は、互いに独立して選択され、互いに同一であっても、相異なってもよい。したがって、幾つかの異なる基は、「R1」のような単一の符号により代表され得る。
から選ばれる。
Lは、H、ハロゲン又は随意にフッ素化された1〜12個のC原子を有する直鎖若しくは分岐アルキル或いはアルコキシであり、好ましくは、H、F、メチル、i-プロピル、t-ブチル、n-ペントキシ又はトリフルオロメチルであり、
L’は、H、随意にフッ素化された1〜12個のC原子を有する直鎖若しくは分岐アルキル或いはアルコキシであり、好ましくは、n-オクチル又はn-オクチルオキシである。
Ar4−5は、互いに独立した並列の出現の場合には、随意に置換された単核或いは多核アリール若しくはヘテロアリールであり、
Ar6は、異なる式の鎖残基と連結するブリッジ基により随意に置換されてもよい、随意に置換された単核或いは多核アリール若しくはヘテロアリールであり、
mは、1、2若しくは3である。
Aは、式I若しくはその好ましい下位式の単位であり、
Bは、式II若しくはその好ましい下位式の単位であり、
xは、0.5≧x>0であり、
yは、1>y≧0.5であり、
x+yは、1であり、
nは、1を超える整数である。
Aは、式I若しくはその好ましい下位式の単位であり、
Bは、式II若しくはその好ましい下位式の単位であり、
nは、1を超える整数である。)
特に好ましいのは、式1及び1Aのポリマーであって、Aが、式I1a-I1b、I1c或いはI5aから選ばれ、Bが、式II1a、式II8a、式II9a、式II11a、式II12a、式II13aから選ばれる。
本発明のポリマーは、薄い有機層若しくは膜の形で、好ましくは、30ミクロン厚み未満で、有機半導体として、典型的には使用される。典型的には、本発明の半導体層は、せいぜい1ミクロン(1μm)厚みであるが、所望であればより厚くともよい。種々の電子素子用途のために、厚さは、約1ミクロン厚み未満であってもよい。例えば、OFET若しくはOLEDの使用のためには、層厚は、典型的には、100nm以下であり得る。層の正確な厚さは、例えば、層が使用される電子素子の要請に依存するだろう。
-ソース電極
-ドレーン電極
-ゲート電極
-半導体層
-1以上のゲート絶縁層
-随意に、基板
を含み、ここで、半導体層は、好ましくは、1以上の上記及び下記記載のとおりのポリマーを含む。
ビス-2,8-[6,6,12,12-テトラオクチル-6,12-ジヒドロ-インデノ[1,2-b]フルオレンボロネートエステル(500mg、0.59ミリモル)と2,5-ジブロモ-チエノ[3,4-b]チオフェン(177mg、0.59ミリモル)の混合物が、50℃でトルエン(10mL)中に溶解される。完全に溶解すると、テトラキス(トリフェニルホスフィン)パラジウム(21mg、0.02ミリモル)と引き続きテトラエチルアンモニウム水酸化物溶液(20重量%、2.50mg)が添加される。混合物は、110℃で6時間、攪拌される、反応混合物は、メタノール(150mL)中に注がれ、20℃で1時間攪拌される。ポリマーは、ソックスレー円筒ろ紙でろ過され、5時間アセトンを使用してソクスレー抽出を介して洗浄される。抽出溶媒はイソ-ヘキサンに交換され、一晩中洗浄が続けられる。ポリマーは単離され、加熱しながらジクロロベンゼン中に溶解され、次いで攪拌しながらメタノールに滴下される。ポリマーはろ過により集められ、真空乾燥される。
ビス-2,8-[6,6,12,12-テトラオクチル-6,12-ジヒドロ-インデノ[1,2-b]フルオレンボロネートエステル(500mg、0.59ミリモル)と2,6-ジブロモ-ジチエノ[3,2-b;2’,3’-d]チオフェン(177mg、0.59ミリモル)の混合物が、50℃でトルエン(10mL)中に溶解される。完全に溶解すると、テトラキス(トリフェニルホスフィン)パラジウム(21mg、0.02ミリモル)と引き続きテトラエチルアンモニウム水酸化物溶液(20重量%、2.50mg)が添加される。混合物は、110℃で6時間、攪拌される、反応混合物は、メタノール(150mL)中に注がれ、20℃で1時間攪拌される。ポリマーは、ソックスレー円筒ろ紙でろ過され、6時間アセトンを使用してソックスレー抽出を介して洗浄される。抽出溶媒はイソ-ヘキサン/2-メチルペンタンに交換され、一晩中洗浄が続けられる。ポリマーは単離され、クロロホルム中に溶解され、次いで攪拌しながらイソ-ヘキサンに滴下される。ポリマーはろ過により集められ、真空乾燥される。
ポリマーの電荷輸送特性は、それを通じて電荷キャリヤーが輸送されるエネルギーの無秩序度と分子軌道の準位との双方に依存する。前者はポリマー鎖の形態学に関連し、分子軌道のエネルギー準位のために最も重要なのは、最高占有分子軌道(HOMO)と最低空分子軌道(LUMO)である。形態学とエネルギー準位は、両方共に、確立された量子化学的方法、例えば、AM1とDFT(密度関数理論)によりシミュレートすることができる。
薄膜ボトムゲートのボトムコンタクト有機電界効果トランジスタ(OFET)は、熱成長酸化シリコン(SiO2)絶縁層(230mm層厚)を有する高度にドープされたシリコン基板上に、乾燥窒素グローブボックス環境下で製造され、ここで、基板は、共通ゲート電極として機能する。トランジスタソース-ドレーン金コンタクトが、フォトリソグラフィーによりSiO2層上に規定される。FET基板は溶媒洗浄され、次いで、注文製造された低圧水銀ランプ装置中で、10分間オゾン処理される。素子は、次いで、加熱トルエン(60℃)中の10mL溶液に基板を浸漬することにより、オクチルトリクロロシランで処理され、続いて、ヘキサン、アセトン及びイソプロパンノールで完全に洗浄される。薄い半導体膜が、暖い1,2-ジクロロベンゼン(10mg/ml)中のスピンコート溶液により、3000rpmの回転速度で堆積される。試料は、次いで乾燥され、100℃で10分間アニールされ、光の不存在下、測定される。電界効果移動度μsatは、方程式(1)を使用して飽和領域(Vd>(VgーV0))で計算される。
Claims (15)
- 1以上の同一若しくは相異なる式Iの単位と、
A、B及びB’は、互いに独立しており、互いに独立した並列の出現の場合には、二価の基であり、
各gは、独立して、0若しくは1であり、同じ副単位中の各対応するhは、反対の0及び1であり、
mは、1以上の整数であり、
Ar1及びAr2は、互いに独立して、随意に置換されるか、随意にインデノフルオレン基の7,8-位或いは8,9-位で縮合された単核或いは多核アリール若しくはヘテリアリールであり、
a及びbは、互いに独立して、0若しくは1であり、
T1及びT2は、互いに独立して、随意にR3により置換されるチオフェン、セレノフェン、チエノ[2,3b]チオフェン、チエノ[3,2b]チオフェン、ジチエノチオフェン及びピロールから選ばれ、
R3は、互いに独立した並列の出現の場合には、ハロゲン、-CN、-NC、-NCO、-NCS、-OCN、-SCN、-C(=O)NR0R00、-C(=O)X、-C(=O)R0、-NH2、-NR0R00、-SH、-SR0、-SO3H、-SO2R0、-OH、-NO2、-CF3、-SF5、随意に置換されたシリル若しくは随意に置換され、随意に1以上のヘテロ原子を含む1〜40個のC原子を有するカルビル或いはヒドロカルビルであり、随意に、2個のR3基は、隣接する位置で、結合する環と共にポリ環状基を形成し、
Ar3及びAr4は、互いに独立して、随意に置換され、随意に隣接するチオフェン或いはセレノフェン基の1方或いは両方の2,3-位で縮合された単核或いは多核アリール若しくはヘテリアリールであり、
c及びeは、互いに独立して、0、1、2、3若しくは4で、1<c+e≦6であり、
d及びfは、互いに独立して、0、1、2、3若しくは4であり、
但し、式Iが、6,6-12,12-テトラアルキルトランスインデノフルオレンを意味するならば、そのときは、式IIは、非置換或いはアルキル化ジ、ター或いはクオータチオフェン若しくはジチエノ[3,2-b:2’,3’-e]ピリジンとは異なる。) - A、B及びB’は、互いに独立して、-CR1R2-、-NR1-、-PR1-、-O-、-S-、-SO-、-SO2-、-CO-、-CS-、-CSe-、-P(=O)R1-、-P(=S)R1-及びSiR1R2-から選ばれ、
R1及びR2は、互いに独立して同一であるか異なり、H、ハロゲン、-CN、-NC、-NCO、-NCS、-OCN、-SCN、-C(=O)NR0R00、-C(=O)X、-C(=O)R0、-NH2、-NR0R00、-SH、-SR0、-SO3H、-SO2R0、-OH、-NO2、-CF3、-SF5、随意に置換されたシリル若しくは随意に置換され、随意に1以上のヘテロ原子を含む1〜40個のC原子を有するカルビル或いはヒドロカルビルから選ばれる基であり、随意に、基R1及びR2基は、結合するフルオレン部分と共にスピロ環基を形成し、
Xは、ハロゲンであり、
R0及びR00は、互いに独立して、H又は随意に1以上のヘテロ原子を含む置換カルビル或いはヒドロカルビル基である、
ことを特徴とする、請求項1記載のポリマー。 - 請求項1〜10何れか1項記載のポリマーを含む有機半導体材料、層若しくは成分。
- 請求項1〜10何れか1項記載のポリマーを含む有機エレクトロルミネッセンス材料、層若しくは成分。
- 請求項1〜11何れか1項記載のポリマー、材料、層若しくは成分を含む電子、エレクトロルミネッセンス若しくは電気光学素子。
- 有機電界効果トランジスタ(OFET)、薄膜トランジスタ(TFT)、集積回路(IC)、無線周波数識別(RFID)タグ、光検査器、センサー、論理回路、記憶素子、コンデンサー、有機光(OPV)電池、電荷注入層、ショットキーダイオード、平坦化層、帯電防止膜、導電基板或いはパターン、ポリマー電極膜(PEM)、有機フォトレフラクティブ素子、光伝導体、電子写真要素、電場消光素子、有機発光トランジスタ(OLET)、有機発光ダイオード(OLED)若しくは有機レーザーダイオード(O-Laser)である、請求項13記載の素子。
- 式Iの単位に基づく1以上のモノマーと、式IIの単位に基づく1以上のモノマーと、及び随意に、更なる単位とを、重合反応でカップリングすることによる、請求項1〜10何れか1項記載のポリマーの調製方法。
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US20090247728A1 (en) | 2009-10-01 |
EP2044139B1 (en) | 2011-12-21 |
WO2008009343A1 (en) | 2008-01-24 |
CN101495535A (zh) | 2009-07-29 |
KR101412831B1 (ko) | 2014-07-09 |
TW200819475A (en) | 2008-05-01 |
KR20090031634A (ko) | 2009-03-26 |
ATE538157T1 (de) | 2012-01-15 |
CN101495535B (zh) | 2012-06-20 |
EP2044139A1 (en) | 2009-04-08 |
US8471064B2 (en) | 2013-06-25 |
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