JP2009542004A - 光学制御炭化ケイ素および関連ワイドバンドギャップトランジスタおよびサイリスタ - Google Patents
光学制御炭化ケイ素および関連ワイドバンドギャップトランジスタおよびサイリスタ Download PDFInfo
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
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- Y10S438/914—Doping
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- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
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Abstract
Description
Claims (26)
- 基板、
前記基板上に適用された光活性半絶縁炭化ケイ素(SiC)層であって、前記SiC層がその中に形成されたホウ素関連D−センター欠損を有するSiC層、および
電磁放射線が前記SiC層の表面に入ることを可能とする光透過層を含む集積回路(IC)デバイス。 - 前記基板がN型伝導性基板である、請求項1に記載のICデバイス。
- 前記基板がP型伝導性基板である、請求項1に記載のICデバイス。
- 電磁放射線デバイスであって、前記電磁放射線デバイスが電磁放射線を前記SiC層の前記表面に向けるよう構成された電磁放射線デバイスをさらに含む、請求項1に記載のICデバイス。
- 前記電磁放射線デバイスに接続されたコントローラーであって、前記コントローラーが前記電磁放射線デバイスを駆動するために構成されたコントローラーをさらに含む、請求項4に記載のICデバイス。
- 前記電磁放射線デバイスが前記SiC層において光伝導性を促進する第1の波長および前記SiC層において光伝導性をクエンチングする第2の波長を少なくとも有する電磁放射線を発生する、請求項4に記載のICデバイス。
- 前記ICデバイスが光制御バイポーラ接合トランジスタ(BJT)として構成される、請求項1に記載のICデバイス。
- 前記ICデバイスが光制御接合トランジスタ電界効果トランジスタ(JFET)として構成される、請求項1に記載のICデバイス。
- 前記ICデバイスが光制御金属酸化膜半導体電界効果トランジスタ(MOSFET)として構成される、請求項1に記載のICデバイス。
- 前記ICデバイスが光制御サイリスタとして構成される、請求項1に記載のICデバイス。
- 基板、
前記基板上に蒸着されたドリフト層、
前記ドリフト層上に蒸着されたチャンネル層、
前記基板上に適用された光活性半絶縁炭化ケイ素(SiC)層であって、前記SiC層がその中に形成されたホウ素関連D−センター欠損を有するSiC層、および
電磁放射線が前記SiC層の表面に入ることを可能とする光透過層を含むICデバイス。 - 前記基板がN型伝導性基板である、請求項11に記載のICデバイス。
- 前記基板がP型伝導性基板である、請求項11に記載のICデバイス。
- 電磁放射線デバイスであって、前記電磁放射線デバイスが電磁放射線を前記SiC層の前記表面に向けるよう構成された電磁放射線デバイスをさらに含む、請求項11に記載のICデバイス。
- 前記電磁放射線デバイスに接続されたコントローラーであって、前記コントローラーが前記電磁放射線デバイスを駆動するために構成されたコントローラーをさらに含む、請求項14に記載のICデバイス。
- 前記電磁放射線デバイスが前記SiC層において光伝導性を促進する第1の波長および前記SiC層において光伝導性をクエンチングする第2の波長を少なくとも有する電磁放射線を発生する、請求項14に記載のICデバイス。
- 前記ICデバイスが光制御BJTとして構成される、請求項11に記載のICデバイス。
- 前記ICデバイスが光制御JFETとして構成される、請求項11に記載のICデバイス。
- 前記ICデバイスが光制御MOSFETとして構成される、請求項11に記載のICデバイス。
- 前記ICデバイスが光制御サイリスタとして構成される、請求項11に記載のICデバイス。
- 基板上に光活性半絶縁SiC層を形成すること、およびICデバイスが形成されるよう、前記光活性半絶縁SiC層上にさらなる層を形成することを含む、ICデバイスを形成するための方法。
- 前記SiC層内にホウ素関連D−センター欠損が形成されるよう、前記光活性半絶縁SiC層をホウ素でドーピングすることにより前記光活性半絶縁SiC層を形成する、請求項21に記載の方法。
- 形成される前記光活性ICデバイスが光制御BJTである、請求項21に記載の方法。
- 形成される前記光活性ICデバイスが光制御JFETである、請求項21に記載の方法。
- 形成される前記光活性ICデバイスが光制御MOSFETである、請求項21に記載の方法。
- 形成される前記光活性ICデバイスが光制御サイリスタである、請求項21に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US80513906P | 2006-06-19 | 2006-06-19 | |
US60/805,139 | 2006-06-19 | ||
US11/764,606 | 2007-06-18 | ||
US11/764,606 US8193537B2 (en) | 2006-06-19 | 2007-06-18 | Optically controlled silicon carbide and related wide-bandgap transistors and thyristors |
PCT/US2007/071543 WO2007149846A2 (en) | 2006-06-19 | 2007-06-19 | Optically controlled silicon carbide and related wide-bandgap transistors and thyristors |
Publications (3)
Publication Number | Publication Date |
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JP2009542004A true JP2009542004A (ja) | 2009-11-26 |
JP2009542004A5 JP2009542004A5 (ja) | 2013-06-27 |
JP5439172B2 JP5439172B2 (ja) | 2014-03-12 |
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JP2009516674A Expired - Fee Related JP5439172B2 (ja) | 2006-06-19 | 2007-06-19 | 光学制御炭化ケイ素および関連ワイドバンドギャップトランジスタおよびサイリスタ |
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US (3) | US8193537B2 (ja) |
EP (1) | EP2030251A2 (ja) |
JP (1) | JP5439172B2 (ja) |
KR (1) | KR101396115B1 (ja) |
CN (1) | CN102290480B (ja) |
AU (1) | AU2007261051B2 (ja) |
CA (1) | CA2654456A1 (ja) |
NZ (1) | NZ572661A (ja) |
WO (1) | WO2007149846A2 (ja) |
Cited By (7)
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US8455328B2 (en) | 2013-06-04 |
JP5439172B2 (ja) | 2014-03-12 |
WO2007149846A2 (en) | 2007-12-27 |
CN102290480A (zh) | 2011-12-21 |
CA2654456A1 (en) | 2007-12-27 |
US20130320199A1 (en) | 2013-12-05 |
US8193537B2 (en) | 2012-06-05 |
AU2007261051A1 (en) | 2007-12-27 |
NZ572661A (en) | 2012-03-30 |
KR101396115B1 (ko) | 2014-06-17 |
US20120214275A1 (en) | 2012-08-23 |
AU2007261051B2 (en) | 2013-05-30 |
US20070292074A1 (en) | 2007-12-20 |
WO2007149846A3 (en) | 2008-06-12 |
KR20090033233A (ko) | 2009-04-01 |
US8853710B2 (en) | 2014-10-07 |
CN102290480B (zh) | 2015-05-20 |
EP2030251A2 (en) | 2009-03-04 |
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