JP2009540624A - 仕上げが改善されたボンディングツール - Google Patents
仕上げが改善されたボンディングツール Download PDFInfo
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- JP2009540624A JP2009540624A JP2009530712A JP2009530712A JP2009540624A JP 2009540624 A JP2009540624 A JP 2009540624A JP 2009530712 A JP2009530712 A JP 2009530712A JP 2009530712 A JP2009530712 A JP 2009530712A JP 2009540624 A JP2009540624 A JP 2009540624A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/10—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
- B23K20/106—Features related to sonotrodes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67138—Apparatus for wiring semiconductor or solid state device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/4851—Morphology of the connecting portion, e.g. grain size distribution
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
- H01L2224/78302—Shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Soil Working Implements (AREA)
- Food-Manufacturing Devices (AREA)
Abstract
【選択図】 図6A
Description
Claims (22)
- ボンディングツールであって、
先端部において終端するボディー部を有し、
前記先端部は特定の材料により形成され、少なくとも当該先端部の一部は前記材料の粒子構造に露出されているものである
ボンディングツール。 - 請求項1記載のボンディングツールにおいて、前記先端部の上面部における粒子構造は露出しているものである。
- 請求項1記載のボンディングツールにおいて、前記先端部の内側面取り部における粒子構造は露出しているものである。
- 請求項1記載のボンディングツールにおいて、前記ボディー部はワイヤーボンディング装置のトランスデューサーと連結するように構成された連結部を含み、前記連結部における粒子構造は露出しているものである。
- 請求項1記載のボンディングツールにおいて、前記ボンディングツールは前記材料の単一片として形成され、前記材料の粒子構造は前記ボンディングツールの外側全体において露出しているものである。
- 請求項1記載のボンディングツールにおいて、露出した粒子構造を有する前記先端部の前記部分の表面には複数の凹凸が形成され、前記凹凸の密度は少なくとも15μ^−2であり、前記複数の凹凸を形成する先端部の前記部分における表面粗度の平均値は少なくとも0.03μである。
- 請求項6記載のボンディングツールにおいて、前記凹凸の密度は少なくとも20μ^−2である。
- 請求項6記載のボンディングツールにおいて、前記凹凸の密度は少なくとも20μ^−2であり、表面粗度の平均値は少なくとも0.04μである。
- 請求項1記載のボンディングツールにおいて、前記ボンディングツールには前記ボンディングツールの長さに沿って延びる穴が形成され、前記穴は一定長さのワイヤーを受容するように構成され且つ前記先端部の内側面取り部で終端するものであり、前記内側面取り部に隣接する前記先端部の終端部に上面部が形成されるものであり、(1)前記内側面取り部および(2)前記上面部のうちの少なくとも1つの粒子構造は露出しているものである。
- 請求項9記載のボンディングツールにおいて、前記内側面取り部および前記上面部の双方の粒子構造は露出しているものである。
- 請求項9記載のボンディングツールにおいて、前記上面部の粒子構造は露出しており、前記内側面取り部の表面の粒子構造は露出していないものである。
- 請求項11記載のボンディングツールにおいて、前記内側面取り部の表面は研磨仕上げされているものである。
- ボンディングツールであって、
先端部において終端するボディー部を有し、
前記先端部の少なくとも一部の表面には複数の凹凸が形成され、前記凹凸の密度は少なくとも15μ^−2であり、前記複数の凹凸を形成する前記先端部の前記部分における表面粗度の平均値は少なくとも0.03μである
ボンディングツール。 - 請求項13記載のボンディングツールにおいて、凹凸の密度は少なくとも20μ^−2である。
- 請求項13記載のボンディングツールにおいて、凹凸の密度は少なくとも20μ^−2であり、前記表面粗度の平均値は少なくとも0.04μである。
- 請求項13記載のボンディングツールにおいて、前記ボンディングツールには前記ボンディングツールの長さに沿って延びる穴が形成され、前記穴は一定長さのワイヤーを受容するように構成され且つ前記先端部の内側面取り部で終端するものであり、前記内側面取り部に隣接する前記先端部の終端に上面部が形成されるものであり、(1)前記内側面取り部および(2)前記上面部のうち少なくとも1つの表面には複数の凹凸が形成され、前記凹凸の密度は少なくとも15μ^−2であり、(1)前記内側面取り部および(2)前記上面部のうちの前記少なくとも1つにおける表面粗度の平均値は少なくとも0.03μである。
- 請求項16記載のボンディングツールにおいて、凹凸の密度は少なくとも20μ^−2である。
- 請求項16記載のボンディングツールにおいて、凹凸の密度は少なくとも20μ^−2であり、表面粗度の平均値は少なくとも0.04μである。
- 請求項16記載のボンディングツールにおいて、前記内側面取り部および前記上面部の双方の表面には前記複数の凹凸が形成されているものである。
- 請求項16記載のボンディングツールにおいて、前記上面部の表面には前記複数の凹凸が形成され、前記内側面取り部の表面は研磨仕上げされているものである。
- 請求項13記載のボンディングツールにおいて、前記ボディー部は、ワイヤーボンディング装置のトランスデューサーと連結するように構成された連結部を含み、前記連結部の表面においても複数の凹凸が形成され、前記凹凸の密度は少なくとも15μ^−2であり、前記連結部の表面における表面粗度の平均値は少なくとも0.03μである。
- 請求項13記載のボンディングツールにおいて、前記ボンディングツールは前記材料の単一片として形成され、前記ボンディングツールの外側全体の表面には複数の凹凸が形成され、前記凹凸の密度は少なくとも15μ^−2であり、前記ボンディングツールの前記外側全体の表面における表面粗度の平均値は少なくとも0.03μである。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US80650306P | 2006-07-03 | 2006-07-03 | |
US60/806,503 | 2006-07-03 | ||
US88492007P | 2007-01-15 | 2007-01-15 | |
US60/884,920 | 2007-01-15 | ||
PCT/US2007/071595 WO2008005684A2 (en) | 2006-07-03 | 2007-06-19 | Bonding tool with improved finish |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009540624A true JP2009540624A (ja) | 2009-11-19 |
JP2009540624A5 JP2009540624A5 (ja) | 2010-03-11 |
JP5595731B2 JP5595731B2 (ja) | 2014-09-24 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009530712A Active JP5595731B2 (ja) | 2006-07-03 | 2007-06-19 | 仕上げが改善されたボンディングツール |
Country Status (8)
Country | Link |
---|---|
US (1) | US20080314963A1 (ja) |
JP (1) | JP5595731B2 (ja) |
KR (1) | KR101319691B1 (ja) |
CN (1) | CN101443885B (ja) |
CH (1) | CH700833B1 (ja) |
SG (1) | SG173340A1 (ja) |
TW (1) | TWI409888B (ja) |
WO (1) | WO2008005684A2 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014082450A (ja) * | 2012-09-26 | 2014-05-08 | Toto Ltd | ボンディングキャピラリ |
KR101482597B1 (ko) | 2012-09-26 | 2015-01-14 | 토토 가부시키가이샤 | 본딩 캐필러리 |
KR20160002343A (ko) * | 2014-06-30 | 2016-01-07 | 토토 가부시키가이샤 | 본딩 캐필러리 |
JP2017017306A (ja) * | 2015-07-03 | 2017-01-19 | Toto株式会社 | ボンディングキャピラリ |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8357998B2 (en) * | 2009-02-09 | 2013-01-22 | Advanced Semiconductor Engineering, Inc. | Wirebonded semiconductor package |
KR101047142B1 (ko) * | 2009-05-22 | 2011-07-07 | 주식회사 페코 | 와이어 본딩용 캐필러리 제조 방법 및 이에 의한 와이어 본딩용 캐필러리 |
KR101139018B1 (ko) * | 2010-08-20 | 2012-04-26 | 이정구 | 구리 와이어 본딩용 캐필러리의 제조 방법 및 이에 의한 구리 와이어 본딩용 캐필러리 |
US8618677B2 (en) | 2012-04-06 | 2013-12-31 | Advanced Semiconductor Engineering, Inc. | Wirebonded semiconductor package |
CN109332901B (zh) * | 2018-09-14 | 2021-01-08 | 深圳市商德先进陶瓷股份有限公司 | 陶瓷劈刀及其制作方法和应用 |
CN114309920A (zh) * | 2021-12-23 | 2022-04-12 | 潮州三环(集团)股份有限公司 | 一种陶瓷劈刀及制备方法 |
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- 2007-06-19 WO PCT/US2007/071595 patent/WO2008005684A2/en active Application Filing
- 2007-06-19 KR KR1020087027998A patent/KR101319691B1/ko active IP Right Grant
- 2007-06-19 JP JP2009530712A patent/JP5595731B2/ja active Active
- 2007-06-19 CH CH00672/08A patent/CH700833B1/de unknown
- 2007-06-19 CN CN2007800172171A patent/CN101443885B/zh active Active
- 2007-06-19 US US12/093,688 patent/US20080314963A1/en active Pending
- 2007-06-19 SG SG2011048600A patent/SG173340A1/en unknown
- 2007-06-29 TW TW096123732A patent/TWI409888B/zh active
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2014082450A (ja) * | 2012-09-26 | 2014-05-08 | Toto Ltd | ボンディングキャピラリ |
TWI466750B (zh) * | 2012-09-26 | 2015-01-01 | Toto Ltd | Welding needle |
KR101482597B1 (ko) | 2012-09-26 | 2015-01-14 | 토토 가부시키가이샤 | 본딩 캐필러리 |
KR20160002343A (ko) * | 2014-06-30 | 2016-01-07 | 토토 가부시키가이샤 | 본딩 캐필러리 |
JP2016027602A (ja) * | 2014-06-30 | 2016-02-18 | Toto株式会社 | ボンディングキャピラリ |
TWI609437B (zh) * | 2014-06-30 | 2017-12-21 | Toto Ltd | Solder pin |
KR101941486B1 (ko) | 2014-06-30 | 2019-01-23 | 토토 가부시키가이샤 | 본딩 캐필러리 |
JP2017017306A (ja) * | 2015-07-03 | 2017-01-19 | Toto株式会社 | ボンディングキャピラリ |
Also Published As
Publication number | Publication date |
---|---|
WO2008005684A3 (en) | 2008-05-29 |
TWI409888B (zh) | 2013-09-21 |
KR20090007450A (ko) | 2009-01-16 |
CN101443885B (zh) | 2013-08-21 |
TW200811971A (en) | 2008-03-01 |
US20080314963A1 (en) | 2008-12-25 |
SG173340A1 (en) | 2011-08-29 |
CN101443885A (zh) | 2009-05-27 |
CH700833B1 (de) | 2010-10-29 |
JP5595731B2 (ja) | 2014-09-24 |
KR101319691B1 (ko) | 2013-10-17 |
WO2008005684A2 (en) | 2008-01-10 |
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