JP2009539270A - 半導体加工のためのシステム及び方法 - Google Patents

半導体加工のためのシステム及び方法 Download PDF

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Publication number
JP2009539270A
JP2009539270A JP2009513455A JP2009513455A JP2009539270A JP 2009539270 A JP2009539270 A JP 2009539270A JP 2009513455 A JP2009513455 A JP 2009513455A JP 2009513455 A JP2009513455 A JP 2009513455A JP 2009539270 A JP2009539270 A JP 2009539270A
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Japan
Prior art keywords
precursor
plasma
steps
deposition
introducing
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Pending
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JP2009513455A
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English (en)
Japanese (ja)
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JP2009539270A5 (enExample
Inventor
テュー ニュイエン
タイ デュン ニュイエン
クレイグ アラン バーコー
Original Assignee
ティーガル コーポレイション
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Filing date
Publication date
Priority claimed from US11/443,621 external-priority patent/US7867905B2/en
Priority claimed from US11/443,620 external-priority patent/US7442615B2/en
Application filed by ティーガル コーポレイション filed Critical ティーガル コーポレイション
Publication of JP2009539270A publication Critical patent/JP2009539270A/ja
Publication of JP2009539270A5 publication Critical patent/JP2009539270A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321—Discharge generated by other radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32321—Discharge generated by other radiation
    • H01J37/32339—Discharge generated by other radiation using electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Toxicology (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • General Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2009513455A 2006-05-31 2007-05-31 半導体加工のためのシステム及び方法 Pending JP2009539270A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/443,621 US7867905B2 (en) 2001-04-21 2006-05-31 System and method for semiconductor processing
US11/443,620 US7442615B2 (en) 2001-04-21 2006-05-31 Semiconductor processing system and method
PCT/US2007/070082 WO2007140455A2 (en) 2006-05-31 2007-05-31 System and method for semiconductor processing

Publications (2)

Publication Number Publication Date
JP2009539270A true JP2009539270A (ja) 2009-11-12
JP2009539270A5 JP2009539270A5 (enExample) 2010-07-22

Family

ID=38779474

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009513455A Pending JP2009539270A (ja) 2006-05-31 2007-05-31 半導体加工のためのシステム及び方法

Country Status (4)

Country Link
EP (1) EP2032744A2 (enExample)
JP (1) JP2009539270A (enExample)
KR (1) KR20090017661A (enExample)
WO (1) WO2007140455A2 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10734195B2 (en) * 2017-06-08 2020-08-04 Lam Research Corporation Systems and methods for transformer coupled plasma pulsing with transformer coupled capacitive tuning switching

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH029789A (ja) * 1988-06-28 1990-01-12 Nec Corp シリコンの成長方法
JPH04162427A (ja) * 1990-10-24 1992-06-05 Fujitsu Ltd 気相成膜装置および気相成膜方法
JPH04291916A (ja) * 1991-03-20 1992-10-16 Kokusai Electric Co Ltd 気相成長方法及び装置
JPH0574713A (ja) * 1991-09-17 1993-03-26 Nippondenso Co Ltd 非晶質半導体薄膜の製造方法
JPH06291060A (ja) * 1993-03-30 1994-10-18 Nissin Electric Co Ltd 薄膜形成方法
JPH08186173A (ja) * 1994-12-28 1996-07-16 Nec Corp 半導体装置の製造方法
WO2004070074A2 (en) * 2003-02-04 2004-08-19 Tegal Corporation Nanolayer deposition process
US20050037597A1 (en) * 2001-04-21 2005-02-17 Tue Nguyen Semiconductor processing system and method
JP2006049809A (ja) * 2004-06-28 2006-02-16 Tokyo Electron Ltd 成膜方法、成膜装置及び記憶媒体

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6326248B1 (en) * 1994-06-02 2001-12-04 Semiconductor Energy Laboratory Co., Ltd. Process for fabricating semiconductor device
JP2004311955A (ja) * 2003-03-25 2004-11-04 Sony Corp 超薄型電気光学表示装置の製造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH029789A (ja) * 1988-06-28 1990-01-12 Nec Corp シリコンの成長方法
JPH04162427A (ja) * 1990-10-24 1992-06-05 Fujitsu Ltd 気相成膜装置および気相成膜方法
JPH04291916A (ja) * 1991-03-20 1992-10-16 Kokusai Electric Co Ltd 気相成長方法及び装置
JPH0574713A (ja) * 1991-09-17 1993-03-26 Nippondenso Co Ltd 非晶質半導体薄膜の製造方法
JPH06291060A (ja) * 1993-03-30 1994-10-18 Nissin Electric Co Ltd 薄膜形成方法
JPH08186173A (ja) * 1994-12-28 1996-07-16 Nec Corp 半導体装置の製造方法
US20050037597A1 (en) * 2001-04-21 2005-02-17 Tue Nguyen Semiconductor processing system and method
WO2004070074A2 (en) * 2003-02-04 2004-08-19 Tegal Corporation Nanolayer deposition process
JP2006049809A (ja) * 2004-06-28 2006-02-16 Tokyo Electron Ltd 成膜方法、成膜装置及び記憶媒体

Also Published As

Publication number Publication date
KR20090017661A (ko) 2009-02-18
WO2007140455A3 (en) 2008-02-14
WO2007140455A2 (en) 2007-12-06
EP2032744A2 (en) 2009-03-11

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