JP2009534541A5 - - Google Patents

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Publication number
JP2009534541A5
JP2009534541A5 JP2009507056A JP2009507056A JP2009534541A5 JP 2009534541 A5 JP2009534541 A5 JP 2009534541A5 JP 2009507056 A JP2009507056 A JP 2009507056A JP 2009507056 A JP2009507056 A JP 2009507056A JP 2009534541 A5 JP2009534541 A5 JP 2009534541A5
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JP
Japan
Prior art keywords
pressure
cvi
controller
volume
heating zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009507056A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009534541A (ja
JP5567332B2 (ja
Filing date
Publication date
Priority claimed from FR0651455A external-priority patent/FR2900226B1/fr
Application filed filed Critical
Publication of JP2009534541A publication Critical patent/JP2009534541A/ja
Publication of JP2009534541A5 publication Critical patent/JP2009534541A5/ja
Application granted granted Critical
Publication of JP5567332B2 publication Critical patent/JP5567332B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2009507056A 2006-04-25 2007-04-24 Ｃｖｉ／ｃｖｄ炉 Expired - Fee Related JP5567332B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR0651455 2006-04-25
FR0651455A FR2900226B1 (fr) 2006-04-25 2006-04-25 Four de traitement ou analogue
PCT/EP2007/053973 WO2007122225A1 (en) 2006-04-25 2007-04-24 Process furnace or the like.

Publications (3)

Publication Number Publication Date
JP2009534541A JP2009534541A (ja) 2009-09-24
JP2009534541A5 true JP2009534541A5 (enExample) 2010-05-20
JP5567332B2 JP5567332B2 (ja) 2014-08-06

Family

ID=37116170

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009507056A Expired - Fee Related JP5567332B2 (ja) 2006-04-25 2007-04-24 Ｃｖｉ／ｃｖｄ炉

Country Status (15)

Country Link
US (1) US20070256639A1 (enExample)
EP (1) EP1849889A1 (enExample)
JP (1) JP5567332B2 (enExample)
KR (1) KR20080111154A (enExample)
CN (1) CN101063195A (enExample)
AU (1) AU2007242730B2 (enExample)
BR (1) BRPI0711411A2 (enExample)
CA (1) CA2649986A1 (enExample)
FR (1) FR2900226B1 (enExample)
IL (1) IL194837A0 (enExample)
MX (1) MX2008013643A (enExample)
RU (1) RU2421544C2 (enExample)
TW (1) TW200746876A (enExample)
UA (1) UA94098C2 (enExample)
WO (1) WO2007122225A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101178046B1 (ko) * 2009-03-23 2012-08-29 한국실리콘주식회사 폴리실리콘 제조용 화학기상증착 반응기
CN102374780A (zh) * 2010-08-12 2012-03-14 北京大方科技有限责任公司 一种平焰炉的结构设计方案
WO2013055967A1 (en) * 2011-10-12 2013-04-18 Integrated Photovoltaic, Inc. Photovoltaic substrate
CN102534567B (zh) * 2012-03-21 2014-01-15 中微半导体设备(上海)有限公司 控制化学气相沉积腔室内的基底加热的装置及方法
FR2993044B1 (fr) * 2012-07-04 2014-08-08 Herakles Dispositif de chargement et installation pour la densification de preformes poreuses tronconiques et empilables
FR2993555B1 (fr) * 2012-07-19 2015-02-20 Herakles Installation d'infiltration chimique en phase vapeur a haute capacite de chargement
CN102889791B (zh) * 2012-09-27 2014-11-19 北京七星华创电子股份有限公司 炉体排风控制装置
CN105862013B (zh) * 2016-06-17 2018-07-06 南京大学 一种应用于小型mocvd系统的高温加热装置
CN107151779B (zh) * 2017-05-27 2019-04-16 西华大学 渗氮可控的零污染离子氮化装置
CN109197927B (zh) * 2018-08-31 2020-12-04 东莞市华美食品有限公司 一种基于物联网控制的食品智能烘烤系统
CN110242969B (zh) * 2019-05-23 2020-12-01 北京科技大学 一种焚硫炉
CN115094402B (zh) * 2022-06-24 2023-04-11 清华大学 一种立式双温区-双通道化学气相沉积设备

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE393967B (sv) * 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
FR2594119B1 (fr) * 1986-02-10 1988-06-03 Europ Propulsion Installation pour l'infiltration chimique en phase vapeur d'un materiau refractaire autre que le carbone
US5062386A (en) * 1987-07-27 1991-11-05 Epitaxy Systems, Inc. Induction heated pancake epitaxial reactor
JPH07108836B2 (ja) * 1991-02-01 1995-11-22 株式会社日本生産技術研究所 減圧ｃｖｄ装置
US5536918A (en) * 1991-08-16 1996-07-16 Tokyo Electron Sagami Kabushiki Kaisha Heat treatment apparatus utilizing flat heating elements for treating semiconductor wafers
JPH05214540A (ja) * 1992-02-05 1993-08-24 Hitachi Ltd Ｃｖｄ反応のモニタ方法
KR100251873B1 (ko) * 1993-01-21 2000-04-15 마쓰바 구니유키 종형 열처리 장치
FR2714076B1 (fr) * 1993-12-16 1996-03-15 Europ Propulsion Procédé de densification de substrats poreux par infiltration chimique en phase vapeur de carbure de silicium.
RU2173354C2 (ru) * 1994-11-16 2001-09-10 З Би.эФ. Гудрич Кампэни Способ и устройство инфильтрации газовой фазы химического вещества и химического осаждения из газовой фазы (варианты), изделие, получаемое этим способом, устройство для подачи первого газа-реагента в печь для инфильтрации и осаждения из газовой фазы и фрикционный диск
US6284312B1 (en) * 1999-02-19 2001-09-04 Gt Equipment Technologies Inc Method and apparatus for chemical vapor deposition of polysilicon
US6228174B1 (en) * 1999-03-26 2001-05-08 Ichiro Takahashi Heat treatment system using ring-shaped radiation heater elements
WO2001061070A1 (en) * 2000-02-18 2001-08-23 G.T. Equipment Technologies Inc. Method and apparatus for chemical vapor deposition of polysilicon
US7220312B2 (en) * 2002-03-13 2007-05-22 Micron Technology, Inc. Methods for treating semiconductor substrates
JP4263024B2 (ja) * 2003-06-05 2009-05-13 株式会社ヒューモラボラトリー 炭素薄膜の製造方法および製造装置

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