JP2009533549A5 - - Google Patents
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- Publication number
- JP2009533549A5 JP2009533549A5 JP2009504143A JP2009504143A JP2009533549A5 JP 2009533549 A5 JP2009533549 A5 JP 2009533549A5 JP 2009504143 A JP2009504143 A JP 2009504143A JP 2009504143 A JP2009504143 A JP 2009504143A JP 2009533549 A5 JP2009533549 A5 JP 2009533549A5
- Authority
- JP
- Japan
- Prior art keywords
- ions
- substrate
- less
- kev
- atomic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 238000000034 method Methods 0.000 claims 19
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 15
- 150000002500 ions Chemical class 0.000 claims 14
- 239000000758 substrate Substances 0.000 claims 14
- 239000000370 acceptor Substances 0.000 claims 8
- -1 nitrogen ions Chemical class 0.000 claims 7
- 239000011787 zinc oxide Substances 0.000 claims 7
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 238000000137 annealing Methods 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- 238000010894 electron beam technology Methods 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims 1
- 238000002513 implantation Methods 0.000 claims 1
- 229910001416 lithium ion Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NZ54291706 | 2006-04-07 | ||
| PCT/NZ2007/000073 WO2007117158A1 (en) | 2006-04-07 | 2007-04-05 | Zinc oxide materials and methods for their preparation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009533549A JP2009533549A (ja) | 2009-09-17 |
| JP2009533549A5 true JP2009533549A5 (enExample) | 2010-05-13 |
Family
ID=38581365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009504143A Withdrawn JP2009533549A (ja) | 2006-04-07 | 2007-04-05 | 酸化亜鉛材料及びそれらの調製方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20090203166A1 (enExample) |
| EP (1) | EP2004553A1 (enExample) |
| JP (1) | JP2009533549A (enExample) |
| WO (1) | WO2007117158A1 (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2929267B1 (fr) * | 2008-03-27 | 2011-01-14 | Commissariat Energie Atomique | Procede de preparation de zno ou de znmgo dope de type p |
| EP2577686A4 (en) | 2010-05-28 | 2017-12-06 | Institute Of Geological And Nuclear Sciences Limited | Magnetic nanoclusters |
| FR2961013B1 (fr) | 2010-06-03 | 2013-05-17 | Commissariat Energie Atomique | Procede pour eliminer des impuretes residuelles extrinseques dans un substrat en zno ou en znmgo de type n, et pour realiser un dopage de type p de ce substrat. |
| FR2981090B1 (fr) * | 2011-10-10 | 2014-03-14 | Commissariat Energie Atomique | Procede de preparation d'oxyde de zinc zno de type p ou de znmgo de type p. |
| KR101275875B1 (ko) * | 2011-10-25 | 2013-06-18 | 경희대학교 산학협력단 | Ｏ, Ａｓ 이중 이온주입에 의한 ｐ형 ＺｎＯ 박막의 제조방법 및 그 방법으로 제조된 ｐ형 ＺｎＯ 박막을 포함하는 다이오드 |
| US20130320335A1 (en) * | 2012-06-01 | 2013-12-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| US9064790B2 (en) * | 2012-07-27 | 2015-06-23 | Stanley Electric Co., Ltd. | Method for producing p-type ZnO based compound semiconductor layer, method for producing ZnO based compound semiconductor element, p-type ZnO based compound semiconductor single crystal layer, ZnO based compound semiconductor element, and n-type ZnO based compound semiconductor laminate structure |
| CN103866276B (zh) * | 2012-12-11 | 2016-08-03 | 中国科学院微电子研究所 | 原子层沉积制备共掺的氧化锌薄膜的方法 |
| CN107523879B (zh) * | 2016-06-20 | 2020-06-30 | 北京师范大学 | 一种离子注入缺陷诱导的室温铁磁性ZnO单晶薄膜制备方法 |
| JP7173312B2 (ja) * | 2019-05-16 | 2022-11-16 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| CN112340767A (zh) * | 2020-12-10 | 2021-02-09 | 安徽泰龙锌业有限责任公司 | 一种纳米氧化锌的制备方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4522657A (en) * | 1983-10-20 | 1985-06-11 | Westinghouse Electric Corp. | Low temperature process for annealing shallow implanted N+/P junctions |
| GB2361480B (en) * | 2000-04-19 | 2002-06-19 | Murata Manufacturing Co | Method for forming p-type semiconductor film and light emitting device using the same |
| US20040108505A1 (en) * | 2002-09-16 | 2004-06-10 | Tuller Harry L. | Method for p-type doping wide band gap oxide semiconductors |
| KR100470155B1 (ko) * | 2003-03-07 | 2005-02-04 | 광주과학기술원 | 아연산화물 반도체 제조방법 |
-
2007
- 2007-04-05 JP JP2009504143A patent/JP2009533549A/ja not_active Withdrawn
- 2007-04-05 WO PCT/NZ2007/000073 patent/WO2007117158A1/en not_active Ceased
- 2007-04-05 US US12/296,326 patent/US20090203166A1/en not_active Abandoned
- 2007-04-05 EP EP07747701A patent/EP2004553A1/en not_active Withdrawn
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