JP2009533549A - 酸化亜鉛材料及びそれらの調製方法 - Google Patents

酸化亜鉛材料及びそれらの調製方法 Download PDF

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Publication number
JP2009533549A
JP2009533549A JP2009504143A JP2009504143A JP2009533549A JP 2009533549 A JP2009533549 A JP 2009533549A JP 2009504143 A JP2009504143 A JP 2009504143A JP 2009504143 A JP2009504143 A JP 2009504143A JP 2009533549 A JP2009533549 A JP 2009533549A
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ions
substrate
kev
implanted
acceptor
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JP2009504143A
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Japanese (ja)
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JP2009533549A5 (enExample
Inventor
ベダムチュー ケネディー，ジョン
マルクビッツ，アンドレアス
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インスティテュート オブ ジオロジカル アンド ニュークリア サイエンシズ リミティド
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Publication of JP2009533549A publication Critical patent/JP2009533549A/ja
Publication of JP2009533549A5 publication Critical patent/JP2009533549A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G9/00—Compounds of zinc
    • C01G9/02—Oxides; Hydroxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/42—Bombardment with radiation
    • H01L21/423—Bombardment with radiation with high-energy radiation
    • H01L21/425—Bombardment with radiation with high-energy radiation producing ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/012—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group II-IV materials
    • H10H20/0125—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group II-IV materials with a substrate not being Group II-VI materials

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  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Toxicology (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2009504143A 2006-04-07 2007-04-05 酸化亜鉛材料及びそれらの調製方法 Withdrawn JP2009533549A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NZ54291706 2006-04-07
PCT/NZ2007/000073 WO2007117158A1 (en) 2006-04-07 2007-04-05 Zinc oxide materials and methods for their preparation

Publications (2)

Publication Number Publication Date
JP2009533549A true JP2009533549A (ja) 2009-09-17
JP2009533549A5 JP2009533549A5 (enExample) 2010-05-13

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ID=38581365

Family Applications (1)

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JP2009504143A Withdrawn JP2009533549A (ja) 2006-04-07 2007-04-05 酸化亜鉛材料及びそれらの調製方法

Country Status (4)

Country Link
US (1) US20090203166A1 (enExample)
EP (1) EP2004553A1 (enExample)
JP (1) JP2009533549A (enExample)
WO (1) WO2007117158A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013535094A (ja) * 2010-05-28 2013-09-09 インスティテュート オブ ジオロジカル アンド ニュークリア サイエンシズ リミティド 磁性ナノクラスター

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2929267B1 (fr) * 2008-03-27 2011-01-14 Commissariat Energie Atomique Procede de preparation de zno ou de znmgo dope de type p
FR2961013B1 (fr) 2010-06-03 2013-05-17 Commissariat Energie Atomique Procede pour eliminer des impuretes residuelles extrinseques dans un substrat en zno ou en znmgo de type n, et pour realiser un dopage de type p de ce substrat.
FR2981090B1 (fr) * 2011-10-10 2014-03-14 Commissariat Energie Atomique Procede de preparation d'oxyde de zinc zno de type p ou de znmgo de type p.
KR101275875B1 (ko) * 2011-10-25 2013-06-18 경희대학교 산학협력단 Ｏ, Ａｓ 이중 이온주입에 의한 ｐ형 ＺｎＯ 박막의 제조방법 및 그 방법으로 제조된 ｐ형 ＺｎＯ 박막을 포함하는 다이오드
US20130320335A1 (en) * 2012-06-01 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9064790B2 (en) * 2012-07-27 2015-06-23 Stanley Electric Co., Ltd. Method for producing p-type ZnO based compound semiconductor layer, method for producing ZnO based compound semiconductor element, p-type ZnO based compound semiconductor single crystal layer, ZnO based compound semiconductor element, and n-type ZnO based compound semiconductor laminate structure
CN103866276B (zh) * 2012-12-11 2016-08-03 中国科学院微电子研究所 原子层沉积制备共掺的氧化锌薄膜的方法
CN107523879B (zh) * 2016-06-20 2020-06-30 北京师范大学 一种离子注入缺陷诱导的室温铁磁性ZnO单晶薄膜制备方法
JP7173312B2 (ja) * 2019-05-16 2022-11-16 富士電機株式会社 半導体装置および半導体装置の製造方法
CN112340767A (zh) * 2020-12-10 2021-02-09 安徽泰龙锌业有限责任公司 一种纳米氧化锌的制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4522657A (en) * 1983-10-20 1985-06-11 Westinghouse Electric Corp. Low temperature process for annealing shallow implanted N+/P junctions
GB2361480B (en) * 2000-04-19 2002-06-19 Murata Manufacturing Co Method for forming p-type semiconductor film and light emitting device using the same
US20040108505A1 (en) * 2002-09-16 2004-06-10 Tuller Harry L. Method for p-type doping wide band gap oxide semiconductors
KR100470155B1 (ko) * 2003-03-07 2005-02-04 광주과학기술원 아연산화물 반도체 제조방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013535094A (ja) * 2010-05-28 2013-09-09 インスティテュート オブ ジオロジカル アンド ニュークリア サイエンシズ リミティド 磁性ナノクラスター
KR101843212B1 (ko) * 2010-05-28 2018-03-28 인스터튜트 오브 지오라지컬 앤드 뉴클리어 싸이언시즈 리미티드 자기 나노클러스터

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US20090203166A1 (en) 2009-08-13
EP2004553A1 (en) 2008-12-24
WO2007117158A1 (en) 2007-10-18

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