JP2009532697A - ナノワイヤを用いたバイオセンサ及びその製造方法 - Google Patents
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Abstract
【選択図】図2
Description
シリコン酸化膜基板の表面にフォトリソグラフィを用いてフォトレジストパターンを形成させた。その後、オクタデシルトリクロロシラン(octadecyl trichloro silane;以下、「OTS」とする)(シグマ)とエタノールとが1:500(容積比)の割合で混合された溶液に浸漬して、基板表面にOTS分子膜を形成させた。
実施例1で製造されたストレプトアビジン検出用バイオセンサの性能試験を行った。
上記実施例1で製造されたバイオセンサを用いてナノプラットフォームを製造した(図6参照)。
Claims (15)
- 固体基板と、
該固体基板の表面に行列に整列されており、両末端に電極の付着したナノワイヤが存在する1つ以上の信号変換部と、
前記固体基板の表面における1つのナノワイヤと他の1つのナノワイヤとの間に存在し、目標物質と結合するレセプタが付着している1つ以上の信号感知部と
を備えてなることを特徴とするバイオセンサ。 - 前記固体基板が、シリコン基板またはガラス基板であることを特徴とする請求項1に記載のバイオセンサ。
- 前記レセプタが、官能基により固体基板の表面の信号感知部に付着しており、酵素基質、リガンド、アミノ酸、ペプチド、蛋白質、核酸、脂質、及び炭水化物からなる群より選択されるいずれか1つ以上であることを特徴とする請求項1に記載のバイオセンサ。
- 前記官能基が、アミン基、カルボキシル基、及びチオール基からなる群より選択されるいずれか1つ以上であることを特徴とする請求項3に記載のバイオセンサ。
- 前記目標物質が、蛋白質、核酸、オリゴ糖、アミノ酸、炭水化物、溶解ガス、酸化硫黄ガス、酸化窒素ガス、残留農薬、重金属、及び環境有害物質からなる群より選択されるいずれか1つ以上であることを特徴とする請求項1に記載のバイオセンサ。
- 前記ナノワイヤが、カーボンナノチューブ、シリコンナノワイヤ、酸化亜鉛ナノワイヤ、及び酸化バナジウムナノワイヤからなる群より選択されるいずれか1つ以上であることを特徴とする請求項1に記載のバイオセンサ。
- 固体基板の表面にナノワイヤを集積させるステップと、
前記ナノワイヤの両末端に電極を蒸着させた後、ポリマーを用いて前記電極をコーティングするステップと、
前記1つのナノワイヤと他の1つのナノワイヤとの間における基板表面に官能基を付着させるステップと、
前記官能基に目標物質と結合するレセプタを固定化するステップと
を含むことを特徴とするバイオセンサの製造方法。 - 前記固体基板が、シリコン基板またはガラス基板であることを特徴とする請求項7に記載のバイオセンサの製造方法。
- 前記レセプタが、官能基により固体基板の表面の信号感知部に付着しており、酵素基質、リガンド、アミノ酸、ペプチド、蛋白質、核酸、脂質、及び炭水化物からなる群より選択されるいずれか1つ以上であることを特徴とする請求項7に記載のバイオセンサの製造方法。
- 前記官能基が、アミン基、カルボキシル基、及びチオール基からなる群より選択されるいずれか1つ以上であることを特徴とする請求項7に記載のバイオセンサの製造方法。
- 前記目標物質が、酵素、蛋白質、核酸、オリゴ糖、アミノ酸、炭水化物、溶解ガス、酸化硫黄ガス、酸化窒素ガス、残留農薬、重金属、及び環境有害物質からなる群より選択されるいずれか1つ以上であることを特徴とする請求項7に記載のバイオセンサの製造方法。
- 前記ナノワイヤが、カーボンナノチューブ、シリコンナノワイヤ、酸化亜鉛ナノワイヤ、及び酸化バナジウムナノワイヤからなる群より選択されるいずれか1つ以上であることを特徴とする請求項7に記載のバイオセンサの製造方法。
- 前記1つのナノワイヤと他の1つのナノワイヤとの間における基板表面に官能基を付着させるステップが、ナノワイヤが集積された基板を、シラン基を有する化合物に5〜20分間浸漬することによって行われることを特徴とする請求項7に記載のバイオセンサの製造方法。
- 請求項1〜6のいずれか1項に記載のバイオセンサを用いてレセプタと結合する目標物質を検出することを特徴とする方法。
- 請求項1〜6のいずれか1項に記載のバイオセンサを1つ以上含むことを特徴とするナノプラットフォーム。
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KR1020070032579A KR100874026B1 (ko) | 2006-04-04 | 2007-04-02 | 나노선을 이용한 바이오센서 및 이의 제조 방법 |
PCT/KR2007/001647 WO2007114649A1 (en) | 2006-04-04 | 2007-04-04 | Biosensor having nano wire and manufacturing method thereof |
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JP2009504125A Pending JP2009532697A (ja) | 2006-04-04 | 2007-04-04 | ナノワイヤを用いたバイオセンサ及びその製造方法 |
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KR102559668B1 (ko) * | 2020-09-04 | 2023-07-26 | 한국생산기술연구원 | No2 가스센서 및 그의 제조방법 |
KR102598800B1 (ko) * | 2020-12-16 | 2023-11-07 | 주식회사 엔포마레 | 중금속 측정을 위한 전극 소자가 탑재된 측정장치 |
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KR100842886B1 (ko) | 2008-07-02 |
DE602007012423D1 (de) | 2011-03-24 |
CN101438157A (zh) | 2009-05-20 |
EP2008097B1 (en) | 2011-03-02 |
WO2007114650A1 (en) | 2007-10-11 |
EP2008097A1 (en) | 2008-12-31 |
KR20070099462A (ko) | 2007-10-09 |
KR100874026B1 (ko) | 2008-12-17 |
ATE500506T1 (de) | 2011-03-15 |
DE602007012849D1 (de) | 2011-04-14 |
WO2007114649A1 (en) | 2007-10-11 |
EP2008098A1 (en) | 2008-12-31 |
EP2008098A4 (en) | 2009-08-26 |
JP2009532698A (ja) | 2009-09-10 |
CN101438156A (zh) | 2009-05-20 |
ATE498133T1 (de) | 2011-02-15 |
US7927651B2 (en) | 2011-04-19 |
EP2008097A4 (en) | 2009-08-26 |
KR20070099463A (ko) | 2007-10-09 |
US20090155816A1 (en) | 2009-06-18 |
US20090155800A1 (en) | 2009-06-18 |
EP2008098B1 (en) | 2011-02-09 |
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