JP2009512198A5 - - Google Patents
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- Publication number
- JP2009512198A5 JP2009512198A5 JP2008534812A JP2008534812A JP2009512198A5 JP 2009512198 A5 JP2009512198 A5 JP 2009512198A5 JP 2008534812 A JP2008534812 A JP 2008534812A JP 2008534812 A JP2008534812 A JP 2008534812A JP 2009512198 A5 JP2009512198 A5 JP 2009512198A5
- Authority
- JP
- Japan
- Prior art keywords
- image
- illumination
- photoluminescence
- processing
- capturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims 43
- 239000000463 material Substances 0.000 claims 38
- 238000005286 illumination Methods 0.000 claims 20
- 238000005424 photoluminescence Methods 0.000 claims 17
- 239000004065 semiconductor Substances 0.000 claims 11
- 238000003384 imaging method Methods 0.000 claims 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 6
- 229910052710 silicon Inorganic materials 0.000 claims 5
- 239000010703 silicon Substances 0.000 claims 5
- 238000004519 manufacturing process Methods 0.000 claims 3
- 230000007547 defect Effects 0.000 claims 2
- 238000009792 diffusion process Methods 0.000 claims 2
- 239000012212 insulator Substances 0.000 claims 2
- 238000004020 luminiscence type Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| AU2005905598A AU2005905598A0 (en) | 2005-10-11 | Method and system for inspecting indirect bandgap semiconductor structure | |
| PCT/AU2006/001420 WO2007041758A1 (en) | 2005-10-11 | 2006-10-11 | Method and system for inspecting indirect bandgap semiconductor structure |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012279527A Division JP2013102172A (ja) | 2005-10-11 | 2012-12-21 | 間接バンドギャップ半導体構造を検査する方法およびシステム |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009512198A JP2009512198A (ja) | 2009-03-19 |
| JP2009512198A5 true JP2009512198A5 (enExample) | 2009-11-26 |
Family
ID=37942196
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008534812A Pending JP2009512198A (ja) | 2005-10-11 | 2006-10-11 | 間接バンドギャップ半導体構造を検査する方法およびシステム |
| JP2012279527A Pending JP2013102172A (ja) | 2005-10-11 | 2012-12-21 | 間接バンドギャップ半導体構造を検査する方法およびシステム |
| JP2015076831A Pending JP2015173268A (ja) | 2005-10-11 | 2015-04-03 | 間接バンドギャップ半導体構造を検査する方法およびシステム |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012279527A Pending JP2013102172A (ja) | 2005-10-11 | 2012-12-21 | 間接バンドギャップ半導体構造を検査する方法およびシステム |
| JP2015076831A Pending JP2015173268A (ja) | 2005-10-11 | 2015-04-03 | 間接バンドギャップ半導体構造を検査する方法およびシステム |
Country Status (13)
| Country | Link |
|---|---|
| US (4) | US8064054B2 (enExample) |
| EP (1) | EP1946079B2 (enExample) |
| JP (3) | JP2009512198A (enExample) |
| KR (2) | KR101365363B1 (enExample) |
| CN (3) | CN101365937B (enExample) |
| AU (1) | AU2006301905A1 (enExample) |
| DK (1) | DK1946079T3 (enExample) |
| ES (1) | ES2659781T3 (enExample) |
| HU (1) | HUE036690T2 (enExample) |
| MY (1) | MY157737A (enExample) |
| PH (1) | PH12015500265B1 (enExample) |
| TR (1) | TR201802704T4 (enExample) |
| WO (1) | WO2007041758A1 (enExample) |
Families Citing this family (53)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DK1946079T3 (en) * | 2005-10-11 | 2018-03-12 | Bt Imaging Pty Ltd | PROCEDURE AND SYSTEM FOR INSPECTING INDIRECT BANDWOOD SEMICONDUCTOR STRUCTURE |
| US8483476B2 (en) | 2007-08-30 | 2013-07-09 | Bt Imaging Pty Ltd | Photovoltaic cell manufacturing |
| JP5489107B2 (ja) * | 2008-02-22 | 2014-05-14 | フラウンホーファー−ゲゼルシャフト ツール フエルデルング デア アンゲヴァンテン フォルシュング エー.ファオ. | 半導体部品の特性評価のための測定方法及び装置 |
| CN102017191B (zh) | 2008-03-31 | 2014-05-28 | Bt成像股份有限公司 | 用于晶片成像及处理的方法和设备 |
| CN102089874A (zh) * | 2008-07-09 | 2011-06-08 | Bt成像股份有限公司 | 薄膜成像方法和设备 |
| SG158782A1 (en) | 2008-07-28 | 2010-02-26 | Chan Sok Leng | Method and system for detecting micro-cracks in wafers |
| SG158787A1 (en) | 2008-07-28 | 2010-02-26 | Chan Sok Leng | Apparatus for detecting micro-cracks in wafers and method therefor |
| SG177341A1 (en) | 2009-07-20 | 2012-02-28 | Bt Imaging Pty Ltd | Separation of doping density and minority carrier lifetime in photoluminescence measurements on semiconductor materials |
| JP5271185B2 (ja) * | 2009-07-28 | 2013-08-21 | 株式会社アイテス | 太陽光発電素子の検査装置 |
| EP2284520A1 (en) | 2009-07-28 | 2011-02-16 | David Marcos Muntal | Assembly for the inspection in a continuous manner of cells, strings and photovoltaic modules and inspection method thereof |
| US20120142125A1 (en) * | 2009-08-14 | 2012-06-07 | Bt Imagin Pty Ltd. | Photoluminescence imaging systems for silicon photovoltaic cell manufacturing |
| CN102812349B (zh) * | 2010-01-04 | 2016-03-09 | Bt成像股份有限公司 | 半导体设备的在线光致发光成像 |
| CN102156106A (zh) * | 2010-02-11 | 2011-08-17 | 致茂电子(苏州)有限公司 | 太阳能晶圆快速检测系统 |
| JP2013524217A (ja) * | 2010-03-29 | 2013-06-17 | インテヴァック インコーポレイテッド | 時間分解フォトルミネッセンス撮像システム及び光電池検査方法 |
| EP2577274A1 (en) * | 2010-06-04 | 2013-04-10 | Hemlock Semiconductor Corporation | A method for measuring bulk impurities of semiconductor materials using edge - on photoluminescence |
| US8629411B2 (en) | 2010-07-13 | 2014-01-14 | First Solar, Inc. | Photoluminescence spectroscopy |
| MY186210A (en) | 2010-07-23 | 2021-06-30 | First Solar Inc | In-line metrology system and method |
| WO2012016233A1 (en) * | 2010-07-30 | 2012-02-02 | First Solar, Inc. | Photoluminescence measurement tool and associated method |
| WO2012019219A1 (en) | 2010-08-09 | 2012-02-16 | Bt Imaging Pty Ltd | Persistent feature detection |
| CN101988904A (zh) * | 2010-10-15 | 2011-03-23 | 中国电子科技集团公司第十八研究所 | 太阳能电池缺陷检测方法 |
| DE102011002960B3 (de) * | 2011-01-21 | 2012-04-26 | Osram Ag | Solarsimulator und Verfahren zum Betreiben eines Solarsimulators |
| KR20120113019A (ko) * | 2011-04-04 | 2012-10-12 | 삼성전기주식회사 | 태양전지 셀 검사 방법 및 장치 |
| JP5694042B2 (ja) * | 2011-04-28 | 2015-04-01 | 三洋電機株式会社 | 太陽電池モジュールの評価方法及び太陽電池モジュールの製造方法 |
| US9863890B2 (en) * | 2011-06-10 | 2018-01-09 | The Boeing Company | Solar cell testing apparatus and method |
| ITUD20110115A1 (it) * | 2011-07-19 | 2013-01-20 | Applied Materials Italia Srl | Dispositivo per la simulazione della radiazione solare e procedimento di test che utilizza tale dispositivo |
| US8604447B2 (en) | 2011-07-27 | 2013-12-10 | Kla-Tencor Corporation | Solar metrology methods and apparatus |
| CN103874918A (zh) * | 2011-08-12 | 2014-06-18 | Bt成像股份有限公司 | 半导体晶片中掺杂变化的光致发光成像 |
| JP5848583B2 (ja) * | 2011-11-02 | 2016-01-27 | 浜松ホトニクス株式会社 | 太陽電池関連試料測定システム |
| NL2007941C2 (en) * | 2011-12-09 | 2013-06-11 | Stichting Energie | Qualification of silicon wafers for photo-voltaic cells by optical imaging. |
| CN102608510B (zh) * | 2012-01-19 | 2014-03-26 | 上海交通大学 | 晶体硅太阳电池少子寿命的快速测定方法 |
| CN109387494B (zh) | 2012-07-06 | 2023-01-24 | Bt成像股份有限公司 | 检查半导体材料的方法与分析半导体材料的方法和系统 |
| KR101256810B1 (ko) * | 2012-07-06 | 2013-04-23 | 주식회사 한국테크놀로지 | El 기법을 이용한 태양전지 검사장치 및 방법 |
| KR102068741B1 (ko) | 2013-06-04 | 2020-01-22 | 삼성디스플레이 주식회사 | 다결정 규소막의 검사 방법 |
| US9685906B2 (en) | 2013-07-03 | 2017-06-20 | Semilab SDI LLC | Photoluminescence mapping of passivation defects for silicon photovoltaics |
| DE102013112885A1 (de) * | 2013-11-21 | 2015-05-21 | Osram Opto Semiconductors Gmbh | Verfahren zur optischen Charakterisierung eines optoelektronischen Halbleitermaterials und Vorrichtung zur Durchführung des Verfahrens |
| US9754365B2 (en) * | 2014-02-21 | 2017-09-05 | Applied Materials, Inc. | Wafer inspection method and software |
| CN104201127B (zh) * | 2014-08-22 | 2017-01-18 | 西安炬光科技有限公司 | 一种半导体激光器阵列连接界面表征方法及装置 |
| US10012593B2 (en) | 2015-05-04 | 2018-07-03 | Semilab Semiconductor Physics Laboratory Co., Ltd. | Micro photoluminescence imaging |
| US10883941B2 (en) | 2015-05-04 | 2021-01-05 | Semilab Semiconductor Physics Laboratory Co., Ltd. | Micro photoluminescence imaging |
| US10018565B2 (en) | 2015-05-04 | 2018-07-10 | Semilab Semiconductor Physics Laboratory Co., Ltd. | Micro photoluminescence imaging with optical filtering |
| JP6520782B2 (ja) * | 2016-03-18 | 2019-05-29 | 信越半導体株式会社 | エピタキシャルウェーハの評価方法及び製造方法 |
| CN107091822B (zh) * | 2017-03-14 | 2019-09-10 | 华东师范大学 | 双光源激发光致发光检测半导体缺陷的装置及其检测方法 |
| JP6411683B1 (ja) * | 2017-10-16 | 2018-10-24 | 株式会社デンケン | 太陽電池検査装置及びカメラ付きソーラーシミュレータ |
| US11614406B2 (en) * | 2018-04-30 | 2023-03-28 | The Southern Company | Systems and methods for inspecting solar modules using high-power light sources |
| CN109100305B (zh) * | 2018-07-13 | 2022-02-18 | 陕西师范大学 | 一种液体分散系的数字化物质信息获取装置及方法 |
| US11474144B2 (en) | 2018-12-21 | 2022-10-18 | Industrial Technology Research Institute | Method for inspecting light-emitting diodes and inspection apparatus |
| DE102019121807A1 (de) | 2019-08-13 | 2021-02-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zur Analyse einer Mehrfachsolarzelle mit zumindest zwei Sub-Solarzellen mittels Lumineszenzstrahlung |
| CZ309036B6 (cs) * | 2020-06-15 | 2021-12-15 | Fyzikální Ústav Av Čr, V. V. I. | Způsob a zařízení pro měření tloušťky tenkých vrstev i na hrubých podložkách |
| TWI759866B (zh) * | 2020-06-19 | 2022-04-01 | 財團法人工業技術研究院 | 發光二極體的檢測裝置及其檢測方法 |
| EP4211726A4 (en) * | 2020-09-08 | 2024-11-27 | Massachusetts Institute Of Technology | PREDICTION OF SEMICONDUCTOR DEVICE PERFORMANCE |
| KR102757103B1 (ko) * | 2022-05-23 | 2025-01-21 | (주) 오로스테크놀로지 | 스펙클 노이즈가 저감된 레이저 조명 시스템 |
| CN116386773A (zh) * | 2023-03-02 | 2023-07-04 | 南京航空航天大学 | 一种基于图神经网络的Si-Ge晶体直接带隙预测网络结构 |
| US12461299B2 (en) | 2023-11-02 | 2025-11-04 | Orbotech Ltd. | LED and laser diode combined illumination system |
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| DK1946079T3 (en) * | 2005-10-11 | 2018-03-12 | Bt Imaging Pty Ltd | PROCEDURE AND SYSTEM FOR INSPECTING INDIRECT BANDWOOD SEMICONDUCTOR STRUCTURE |
-
2006
- 2006-10-11 DK DK06790291.6T patent/DK1946079T3/en active
- 2006-10-11 HU HUE06790291A patent/HUE036690T2/hu unknown
- 2006-10-11 ES ES06790291.6T patent/ES2659781T3/es active Active
- 2006-10-11 KR KR1020137001369A patent/KR101365363B1/ko active Active
- 2006-10-11 KR KR1020087011175A patent/KR101365336B1/ko not_active Expired - Fee Related
- 2006-10-11 EP EP06790291.6A patent/EP1946079B2/en active Active
- 2006-10-11 MY MYPI20081084A patent/MY157737A/en unknown
- 2006-10-11 JP JP2008534812A patent/JP2009512198A/ja active Pending
- 2006-10-11 WO PCT/AU2006/001420 patent/WO2007041758A1/en not_active Ceased
- 2006-10-11 US US12/083,429 patent/US8064054B2/en not_active Expired - Fee Related
- 2006-10-11 TR TR2018/02704T patent/TR201802704T4/tr unknown
- 2006-10-11 CN CN200680046029.7A patent/CN101365937B/zh not_active Expired - Fee Related
- 2006-10-11 AU AU2006301905A patent/AU2006301905A1/en not_active Abandoned
- 2006-10-11 CN CN201410770974.8A patent/CN104568870B/zh active Active
- 2006-10-11 CN CN201410770971.4A patent/CN104569779B/zh active Active
-
2011
- 2011-10-14 US US13/273,697 patent/US8218140B2/en active Active
-
2012
- 2012-06-12 US US13/494,373 patent/US9234849B2/en not_active Expired - Fee Related
- 2012-12-21 JP JP2012279527A patent/JP2013102172A/ja active Pending
-
2015
- 2015-02-06 PH PH12015500265A patent/PH12015500265B1/en unknown
- 2015-04-03 JP JP2015076831A patent/JP2015173268A/ja active Pending
-
2016
- 2016-01-06 US US14/989,341 patent/US9909991B2/en active Active
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