JP2009503842A - 急激な金属−絶縁体遷移を行うウェーハ、その熱処理装置及びこれを利用した熱処理方法 - Google Patents
急激な金属−絶縁体遷移を行うウェーハ、その熱処理装置及びこれを利用した熱処理方法 Download PDFInfo
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- 239000012212 insulator Substances 0.000 title claims abstract description 53
- 230000007704 transition Effects 0.000 title claims abstract description 45
- 238000010438 heat treatment Methods 0.000 title claims description 40
- 238000000034 method Methods 0.000 title claims description 24
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 239000010408 film Substances 0.000 claims description 34
- 239000010409 thin film Substances 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 9
- 229910052746 lanthanum Inorganic materials 0.000 claims description 9
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 claims description 6
- 229910001935 vanadium oxide Inorganic materials 0.000 claims description 6
- 229910052684 Cerium Inorganic materials 0.000 claims description 5
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 5
- 229910052691 Erbium Inorganic materials 0.000 claims description 5
- 229910052693 Europium Inorganic materials 0.000 claims description 5
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 5
- 229910052689 Holmium Inorganic materials 0.000 claims description 5
- 229910052765 Lutetium Inorganic materials 0.000 claims description 5
- 229910052779 Neodymium Inorganic materials 0.000 claims description 5
- 229910052781 Neptunium Inorganic materials 0.000 claims description 5
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 5
- 229910052772 Samarium Inorganic materials 0.000 claims description 5
- 229910052771 Terbium Inorganic materials 0.000 claims description 5
- 229910052776 Thorium Inorganic materials 0.000 claims description 5
- 229910052775 Thulium Inorganic materials 0.000 claims description 5
- 229910052770 Uranium Inorganic materials 0.000 claims description 5
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052787 antimony Inorganic materials 0.000 claims description 5
- 229910052788 barium Inorganic materials 0.000 claims description 5
- 229910052790 beryllium Inorganic materials 0.000 claims description 5
- 229910052793 cadmium Inorganic materials 0.000 claims description 5
- 229910052792 caesium Inorganic materials 0.000 claims description 5
- 229910052791 calcium Inorganic materials 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052735 hafnium Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 229910052741 iridium Inorganic materials 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 229910052744 lithium Inorganic materials 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 229910052748 manganese Inorganic materials 0.000 claims description 5
- 229910052753 mercury Inorganic materials 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052758 niobium Inorganic materials 0.000 claims description 5
- 229910052762 osmium Inorganic materials 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052700 potassium Inorganic materials 0.000 claims description 5
- 229910052702 rhenium Inorganic materials 0.000 claims description 5
- 229910052703 rhodium Inorganic materials 0.000 claims description 5
- 229910052707 ruthenium Inorganic materials 0.000 claims description 5
- 229910052706 scandium Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910052708 sodium Inorganic materials 0.000 claims description 5
- 229910052712 strontium Inorganic materials 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- 229910052713 technetium Inorganic materials 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 229910052720 vanadium Inorganic materials 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 229910052778 Plutonium Inorganic materials 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 150000002484 inorganic compounds Chemical class 0.000 claims description 4
- 229910010272 inorganic material Inorganic materials 0.000 claims description 4
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 4
- 229910052723 transition metal Inorganic materials 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 claims 28
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 11
- 229910052760 oxygen Inorganic materials 0.000 description 11
- 239000001301 oxygen Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 5
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- -1 VO 2 Chemical compound 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
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- Formation Of Insulating Films (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (18)
- 急激な金属−絶縁体遷移を行う基板と、
前記基板上に電気伝導度及び熱伝導性の良好なペーストでコーティングまたは蒸着された金属層と、を備えることを特徴とする金属−絶縁体遷移を行うウェーハ。 - 前記金属層は、Li、Be、C、Na、Mg、Al、K、Ca、Sc、Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zn、Ga、Rb、Sr、Y、Zr、Nb、Mo、Tc、Ru、Rh、Pd、Ag、Cd、In、Sn、Sb、Cs、Ba、La、Hf、Ta、W、Re、Os、Ir、Pt、Au、Hg、Ti、Pb、Bi、Po、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Th、U、Np、Pu、Oなどの元素を含むか、または前記元素で構成された多層薄膜あるいは合金あるいは化合物を含むことを特徴とする請求項1に記載の金属−絶縁体遷移を行うウェーハ。
- 一面に熱的に不透明な膜が覆われ、急激な金属−絶縁体遷移を行うウェーハに熱を加えるヒータと、
前記ヒーターの上面のエッジに沿って形成され、前記ウェーハを固定させるための複数の固定手段と、を備えることを特徴とする金属−絶縁体遷移を行うウェーハの熱処理装置。 - 前記不透明な膜は、熱を吸収し、吸収された熱が自体に均一に伝導されることを特徴とする請求項3に記載の金属−絶縁体遷移を行うウェーハの熱処理装置。
- 前記不透明な膜は、金属薄膜または金属を含むペーストで形成されたことを特徴とする請求項3に記載の金属−絶縁体遷移を行うウェーハの熱処理装置。
- 前記不透明な膜は、Li、Be、C、Na、Mg、Al、K、Ca、Sc、Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zn、Ga、Rb、Sr、Y、Zr、Nb、Mo、Tc、Ru、Rh、Pd、Ag、Cd、In、Sn、Sb、Cs、Ba、La、Hf、Ta、W、Re、Os、Ir、Pt、Au、Hg、Ti、Pb、Bi、Po、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Th、U、Np、Pu及びこれらの合金及びこれらの酸化物で形成された多層膜であることを特徴とする請求項3に記載の金属−絶縁体遷移を行うウェーハの熱処理装置。
- 前記固定手段は、前記ヒータの上面のエッジに固定され、回転力によって昇降するねじ状のボディと、前記回転力を付与できるハンドルとで形成されたことを特徴とする請求項3に記載の金属−絶縁体遷移を行うウェーハの熱処理装置。
- 前記固定手段は、前記ヒータの上面のエッジに固定され、弾性力を有する弾性体で形成されたことを特徴とする請求項3に記載の金属−絶縁体遷移を行うウェーハの熱処理装置。
- 前記ウェーハは、急激な金属−絶縁体遷移を行う物質は、半導体元素(III−V族化合物、II−VI族化合物)、遷移金属元素、希土類元素及びランタン系元素を少なくとも一つ含む、低濃度の正孔が添加されたp型無機物化合物半導体及び絶縁体、低濃度の正孔が添加されたp型有機物半導体及び絶縁体またはこれらの酸化物の基板を含むことを特徴とする請求項3に記載の金属−絶縁体遷移を行うウェーハの熱処理装置。
- 前記基板は、バナジウム酸化物で形成されたことを特徴とする請求項3に記載の金属−絶縁体遷移を行うウェーハの熱処理装置。
- 前記ヒータは、前記ウェーハを定着させるために上面の内側に所定の深さほどリセスされた領域を含むことを特徴とする請求項3に記載の金属−絶縁体遷移を行うウェーハの熱処理装置。
- 前記リセスされた領域は、前記ウェーハで発生するガスが排出されるように、前記リセスされた領域の側壁と前記ウェーハとの間に空間が形成されるほどの直径を有することを特徴とする請求項11に記載の金属−絶縁体遷移を行うウェーハの熱処理装置。
- 前記ヒータと前記固定手段との間には、前記ウェーハのエッジに沿って覆いつつ、前記ヒータの上面のエッジに沿って置かれるリング状の固定板をさらに備えることを特徴とする請求項3に記載の金属−絶縁体遷移を行うウェーハの熱処理装置。
- 急激な金属−絶縁体遷移を行う基板を準備するステップと、
前記基板の一面に熱的に不透明な膜を覆ってウェーハを形成するステップと、
前記不透明な膜が露出されるように前記ウェーハを複数の固定手段を利用してヒーターに固定するステップと、
前記ウェーハに熱を加えるステップと、を含む金属−絶縁体遷移を行うウェーハの熱処理方法。 - 前記不透明な膜は、前記ウェーハの一面に金属薄膜を蒸着するか、または金属を含むペーストをコーティングして形成することを特徴とする請求項14に記載の金属−絶縁体遷移を行うウェーハの熱処理方法。
- 前記不透明な膜は、Li、Be、C、Na、Mg、Al、K、Ca、Sc、Ti、V、Cr、Mn、Fe、Co、Ni、Cu、Zn、Ga、Rb、Sr、Y、Zr、Nb、Mo、Tc、Ru、Rh、Pd、Ag、Cd、In、Sn、Sb、Cs、Ba、La、Hf、Ta、W、Re、Os、Ir、Pt、Au、Hg、Ti、Pb、Bi、Po、Ce、Pr、Nd、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb、Lu、Th、U、Np、Pu及びこれらの合金及びこれらの酸化物で形成された多層膜であることを特徴とする請求項14に記載の金属−絶縁体遷移を行うウェーハの熱処理方法。
- 前記基板は、急激な金属−絶縁体遷移を行う物質は、半導体元素(III−V族化合物、II−VI族化合物)、遷移金属元素、希土類元素及びランタン系元素を少なくとも一つ含む、低濃度の正孔が添加されたp型無機物化合物半導体及び絶縁体、低濃度の正孔が添加されたp型有機物半導体及び絶縁体またはこれらの酸化物であることを特徴とする請求項14に記載の金属−絶縁体遷移を行うウェーハの熱処理方法。
- 前記熱は、赤外線によって発生することを特徴とする請求項14に記載の金属−絶縁体遷移を行うウェーハの熱処理方法。
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PCT/KR2006/002605 WO2007055453A1 (en) | 2005-07-28 | 2006-07-04 | Abrupt metal-insulator transition wafer, and heat treatment apparatus and method for the wafer |
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Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0658821A (ja) * | 1992-08-06 | 1994-03-04 | Nec Corp | 温度センサー |
JPH09289107A (ja) * | 1996-04-22 | 1997-11-04 | Mitsubishi Electric Corp | 限流素子の電極の製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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US5791895A (en) * | 1994-02-17 | 1998-08-11 | Novellus Systems, Inc. | Apparatus for thermal treatment of thin film wafer |
JP3527022B2 (ja) * | 1996-07-24 | 2004-05-17 | 東芝機械株式会社 | 数値制御装置 |
JP3236860B2 (ja) * | 1996-10-29 | 2001-12-10 | 防衛庁技術研究本部長 | 熱型赤外線センサの製造方法 |
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US6333543B1 (en) * | 1999-03-16 | 2001-12-25 | International Business Machines Corporation | Field-effect transistor with a buried mott material oxide channel |
US6259114B1 (en) * | 1999-05-07 | 2001-07-10 | International Business Machines Corporation | Process for fabrication of an all-epitaxial-oxide transistor |
KR100433623B1 (ko) * | 2001-09-17 | 2004-05-31 | 한국전자통신연구원 | 급격한 금속-절연체 상전이를 이용한 전계 효과 트랜지스터 |
KR100467330B1 (ko) * | 2003-06-03 | 2005-01-24 | 한국전자통신연구원 | 절연체 바나듐 산화막을 채널 영역으로 이용한 전계 효과트랜지스터 및 그 제조 방법 |
JP2005210063A (ja) * | 2003-12-24 | 2005-08-04 | Hitachi Ltd | 電界効果トランジスタおよびその製造方法 |
WO2005078399A1 (ja) * | 2004-02-16 | 2005-08-25 | Matsushita Electric Industrial Co., Ltd. | 赤外線撮像素子 |
JP2005311071A (ja) * | 2004-04-21 | 2005-11-04 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
KR100609699B1 (ko) * | 2004-07-15 | 2006-08-08 | 한국전자통신연구원 | 급격한 금속-절연체 전이 반도체 물질을 이용한 2단자반도체 소자 및 그 제조 방법 |
-
2006
- 2006-02-17 KR KR1020060015635A patent/KR100734882B1/ko not_active IP Right Cessation
- 2006-07-04 US US11/997,050 patent/US20080277763A1/en not_active Abandoned
- 2006-07-04 JP JP2008523790A patent/JP2009503842A/ja active Pending
- 2006-07-04 EP EP06769162A patent/EP1908100A4/en not_active Withdrawn
- 2006-07-04 CN CN2006800361840A patent/CN101278382B/zh not_active Expired - Fee Related
- 2006-07-04 WO PCT/KR2006/002605 patent/WO2007055453A1/en active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0658821A (ja) * | 1992-08-06 | 1994-03-04 | Nec Corp | 温度センサー |
JPH09289107A (ja) * | 1996-04-22 | 1997-11-04 | Mitsubishi Electric Corp | 限流素子の電極の製造方法 |
Also Published As
Publication number | Publication date |
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EP1908100A1 (en) | 2008-04-09 |
KR100734882B1 (ko) | 2007-07-03 |
WO2007055453A1 (en) | 2007-05-18 |
EP1908100A4 (en) | 2010-11-10 |
US20080277763A1 (en) | 2008-11-13 |
CN101278382B (zh) | 2011-11-23 |
CN101278382A (zh) | 2008-10-01 |
KR20070014935A (ko) | 2007-02-01 |
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