JP2009502041A - ダイオードクランプを有するドレイン拡張されたｍｏｓｆｅｔｓ - Google Patents

ダイオードクランプを有するドレイン拡張されたｍｏｓｆｅｔｓ Download PDF

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Publication number
JP2009502041A
JP2009502041A JP2008522752A JP2008522752A JP2009502041A JP 2009502041 A JP2009502041 A JP 2009502041A JP 2008522752 A JP2008522752 A JP 2008522752A JP 2008522752 A JP2008522752 A JP 2008522752A JP 2009502041 A JP2009502041 A JP 2009502041A
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Japan
Prior art keywords
buried layer
drain
transistor
well
diode
Prior art date
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Abandoned
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JP2008522752A
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English (en)
Japanese (ja)
Inventor
サミーア ペンドハーカー
Original Assignee
テキサス インスツルメンツ インコーポレイテッド
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Application filed by テキサス インスツルメンツ インコーポレイテッド filed Critical テキサス インスツルメンツ インコーポレイテッド
Publication of JP2009502041A publication Critical patent/JP2009502041A/ja
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/7817—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device
    • H01L29/7818—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/66689—Lateral DMOS transistors, i.e. LDMOS transistors with a step of forming an insulating sidewall spacer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2008522752A 2005-07-18 2005-07-18 ダイオードクランプを有するドレイン拡張されたｍｏｓｆｅｔｓ Abandoned JP2009502041A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2005/025396 WO2007011354A1 (en) 2005-07-18 2005-07-18 Drain-extended mosfets with diode clamp

Publications (1)

Publication Number Publication Date
JP2009502041A true JP2009502041A (ja) 2009-01-22

Family

ID=37669121

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008522752A Abandoned JP2009502041A (ja) 2005-07-18 2005-07-18 ダイオードクランプを有するドレイン拡張されたｍｏｓｆｅｔｓ

Country Status (4)

Country Link
EP (1) EP1908121A4 (de)
JP (1) JP2009502041A (de)
KR (1) KR100985373B1 (de)
WO (1) WO2007011354A1 (de)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011003608A (ja) * 2009-06-16 2011-01-06 Renesas Electronics Corp 半導体装置
JP2013524507A (ja) * 2010-03-30 2013-06-17 フリースケール セミコンダクター インコーポレイテッド 半導体デバイスおよび方法
JP2013172110A (ja) * 2012-02-23 2013-09-02 Lapis Semiconductor Co Ltd 半導体装置
JP2013247188A (ja) * 2012-05-24 2013-12-09 Toshiba Corp 半導体装置
JP2014011454A (ja) * 2012-06-29 2014-01-20 Freescale Semiconductor Inc ダイオード回路を通じて相互接続されるドレインおよび分離構造体を有する半導体デバイスおよびドライバ回路ならびにその製造方法
JP2019046911A (ja) * 2017-08-31 2019-03-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009059949A (ja) * 2007-08-31 2009-03-19 Sharp Corp 半導体装置、および、半導体装置の製造方法
US7838940B2 (en) 2007-12-04 2010-11-23 Infineon Technologies Ag Drain-extended field effect transistor
KR100943504B1 (ko) 2007-12-31 2010-02-22 주식회사 동부하이텍 Ｍｏｓｆｅｔ 제조 방법
KR101302108B1 (ko) * 2011-12-30 2013-08-30 주식회사 동부하이텍 드레인 확장형 모스 트랜지스터 제조 방법
KR101694092B1 (ko) * 2016-03-03 2017-01-17 강희복 3상 Flyback 인덕터 구조 적용을 위한 음의 문턱전압 5-단자 엔모스 트랜지스터 소자를 이용한 전력 공급 회로 장치
KR101694091B1 (ko) * 2016-03-03 2017-01-17 강희복 Flyback 인덕터 구조 적용을 위한 음의 문턱전압 5-단자 엔모스 트랜지스터 소자를 이용한 전력 공급 회로 장치
CN112713182B (zh) * 2020-12-29 2022-06-28 浙大城市学院 一种碳化硅元胞级功率集成芯片结构

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69834315T2 (de) * 1998-02-10 2007-01-18 Stmicroelectronics S.R.L., Agrate Brianza Integrierte Schaltung mit einem VDMOS-Transistor, der gegen Überspannungen zwischen Source und Gate geschützt ist
KR100859701B1 (ko) * 2002-02-23 2008-09-23 페어차일드코리아반도체 주식회사 고전압 수평형 디모스 트랜지스터 및 그 제조 방법
JP3713490B2 (ja) * 2003-02-18 2005-11-09 株式会社東芝 半導体装置
US6924531B2 (en) * 2003-10-01 2005-08-02 Taiwan Semiconductor Manufacturing Company, Ltd. LDMOS device with isolation guard rings

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011003608A (ja) * 2009-06-16 2011-01-06 Renesas Electronics Corp 半導体装置
JP2013524507A (ja) * 2010-03-30 2013-06-17 フリースケール セミコンダクター インコーポレイテッド 半導体デバイスおよび方法
JP2013172110A (ja) * 2012-02-23 2013-09-02 Lapis Semiconductor Co Ltd 半導体装置
JP2013247188A (ja) * 2012-05-24 2013-12-09 Toshiba Corp 半導体装置
JP2014011454A (ja) * 2012-06-29 2014-01-20 Freescale Semiconductor Inc ダイオード回路を通じて相互接続されるドレインおよび分離構造体を有する半導体デバイスおよびドライバ回路ならびにその製造方法
JP2019046911A (ja) * 2017-08-31 2019-03-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
EP1908121A4 (de) 2009-09-30
EP1908121A1 (de) 2008-04-09
KR20080033423A (ko) 2008-04-16
WO2007011354A1 (en) 2007-01-25
KR100985373B1 (ko) 2010-10-04

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Date Code Title Description
A762 Written abandonment of application

Free format text: JAPANESE INTERMEDIATE CODE: A762

Effective date: 20091113