EP1908121A4 - Drain-erweiterte mosfets mit diodenklemmung - Google Patents

Drain-erweiterte mosfets mit diodenklemmung

Info

Publication number
EP1908121A4
EP1908121A4 EP05772304A EP05772304A EP1908121A4 EP 1908121 A4 EP1908121 A4 EP 1908121A4 EP 05772304 A EP05772304 A EP 05772304A EP 05772304 A EP05772304 A EP 05772304A EP 1908121 A4 EP1908121 A4 EP 1908121A4
Authority
EP
European Patent Office
Prior art keywords
drain
diode clamping
mosfets
advanced
advanced mosfets
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP05772304A
Other languages
English (en)
French (fr)
Other versions
EP1908121A1 (de
Inventor
Sameer Pendharkar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of EP1908121A1 publication Critical patent/EP1908121A1/de
Publication of EP1908121A4 publication Critical patent/EP1908121A4/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/151—LDMOS having built-in components
    • H10D84/153—LDMOS having built-in components the built-in component being PN junction diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
    • H10D30/0285—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs using formation of insulating sidewall spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/371—Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
EP05772304A 2005-07-18 2005-07-18 Drain-erweiterte mosfets mit diodenklemmung Ceased EP1908121A4 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2005/025396 WO2007011354A1 (en) 2005-07-18 2005-07-18 Drain-extended mosfets with diode clamp

Publications (2)

Publication Number Publication Date
EP1908121A1 EP1908121A1 (de) 2008-04-09
EP1908121A4 true EP1908121A4 (de) 2009-09-30

Family

ID=37669121

Family Applications (1)

Application Number Title Priority Date Filing Date
EP05772304A Ceased EP1908121A4 (de) 2005-07-18 2005-07-18 Drain-erweiterte mosfets mit diodenklemmung

Country Status (4)

Country Link
EP (1) EP1908121A4 (de)
JP (1) JP2009502041A (de)
KR (1) KR100985373B1 (de)
WO (1) WO2007011354A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009059949A (ja) * 2007-08-31 2009-03-19 Sharp Corp 半導体装置、および、半導体装置の製造方法
US7838940B2 (en) 2007-12-04 2010-11-23 Infineon Technologies Ag Drain-extended field effect transistor
KR100943504B1 (ko) 2007-12-31 2010-02-22 주식회사 동부하이텍 Ｍｏｓｆｅｔ 제조 방법
JP5534298B2 (ja) * 2009-06-16 2014-06-25 ルネサスエレクトロニクス株式会社 半導体装置
US8344472B2 (en) * 2010-03-30 2013-01-01 Freescale Semiconductor, Inc. Semiconductor device and method
KR101302108B1 (ko) * 2011-12-30 2013-08-30 주식회사 동부하이텍 드레인 확장형 모스 트랜지스터 제조 방법
JP5960445B2 (ja) * 2012-02-23 2016-08-02 ラピスセミコンダクタ株式会社 半導体装置
JP2013247188A (ja) * 2012-05-24 2013-12-09 Toshiba Corp 半導体装置
US9129990B2 (en) * 2012-06-29 2015-09-08 Freescale Semiconductor, Inc. Semiconductor device and driver circuit with drain and isolation structure interconnected through a diode circuit, and method of manufacture thereof
KR101694091B1 (ko) * 2016-03-03 2017-01-17 강희복 Flyback 인덕터 구조 적용을 위한 음의 문턱전압 5-단자 엔모스 트랜지스터 소자를 이용한 전력 공급 회로 장치
KR101694092B1 (ko) * 2016-03-03 2017-01-17 강희복 3상 Flyback 인덕터 구조 적용을 위한 음의 문턱전압 5-단자 엔모스 트랜지스터 소자를 이용한 전력 공급 회로 장치
JP6920137B2 (ja) * 2017-08-31 2021-08-18 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
CN112713182B (zh) * 2020-12-29 2022-06-28 浙大城市学院 一种碳化硅元胞级功率集成芯片结构

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030173624A1 (en) * 2002-02-23 2003-09-18 Fairchild Korea Semiconductor Ltd. High breakdown voltage low on-resistance lateral DMOS transistor
US20040159891A1 (en) * 2003-02-18 2004-08-19 Kabushiki Kaisha Toshiba Semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69834315T2 (de) * 1998-02-10 2007-01-18 Stmicroelectronics S.R.L., Agrate Brianza Integrierte Schaltung mit einem VDMOS-Transistor, der gegen Überspannungen zwischen Source und Gate geschützt ist
US6924531B2 (en) * 2003-10-01 2005-08-02 Taiwan Semiconductor Manufacturing Company, Ltd. LDMOS device with isolation guard rings

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030173624A1 (en) * 2002-02-23 2003-09-18 Fairchild Korea Semiconductor Ltd. High breakdown voltage low on-resistance lateral DMOS transistor
US20040159891A1 (en) * 2003-02-18 2004-08-19 Kabushiki Kaisha Toshiba Semiconductor device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
PARTHASARATHY V ET AL: "Drain profile engineering of resurf LDMOS devices for ESD ruggedness", PROCEEDINGS OF THE 14TH. INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS. ISPSD'02. SANTA FE, NM, JUNE 4 - 7, 2002; [INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S], NEW YORK, NY : IEEE, US, 4 June 2002 (2002-06-04), pages 265 - 268, XP010591617, ISBN: 978-0-7803-7318-1 *
See also references of WO2007011354A1 *

Also Published As

Publication number Publication date
KR20080033423A (ko) 2008-04-16
EP1908121A1 (de) 2008-04-09
JP2009502041A (ja) 2009-01-22
WO2007011354A1 (en) 2007-01-25
KR100985373B1 (ko) 2010-10-04

Similar Documents

Publication Publication Date Title
EP1861634A4 (de) Spannvorrichtung mit neuinstallationsmerkmal
DE602006007068D1 (de) Led mit leuchtstoff
DK1945998T3 (da) LED-modul med forbedret specifikation
DE602006011904D1 (de) Epizyklisches antriebssystem mit flexpins
DE602006008118D1 (de) Entfernungsanordnung mit distaler freigabe
DE112006001254A5 (de) Lichtemittierendes Bauelement
KR100970986B9 (ko) 플라스틱 파스너
DE502006009127D1 (de) Kunststoff-metall-verbindung
DE502006007895D1 (de) Spannvorrichtung
DE502006003052D1 (de) Handwerkzeuggerät mit Taumeleinrichtung
DE602006005955D1 (de) Schraubzwinge
EP1908121A4 (de) Drain-erweiterte mosfets mit diodenklemmung
ITFI20050094A1 (it) Opercolatrice perfezionata
EP1875777A4 (de) Lichtemittierendes bauelement
DE502006007719D1 (de) Rektoskop mit lichtabstrahlenden Elementen
BRPI0618419A2 (pt) retorno rápido
DE602005017857D1 (de) Bauteil mit Kühlanordnung
DE502006002069D1 (de) Spannvorrichtung
DE112006003063A5 (de) Spannvorrichtung
DE602005009139D1 (de) Router mit speziellen Funktionen
DE602006004130D1 (de) Kettensäge
DE502006000618D1 (de) Einspritzdüse
UA13585S (uk) Затискач
AT502122A3 (de) Leuchteneinbaurahmen mit befestigungsvorrichtung
DE502006009286D1 (de) Linearspannsystem

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20080218

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): DE FR GB

RBV Designated contracting states (corrected)

Designated state(s): DE FR GB

A4 Supplementary search report drawn up and despatched

Effective date: 20090827

17Q First examination report despatched

Effective date: 20091029

DAX Request for extension of the european patent (deleted)
REG Reference to a national code

Ref country code: DE

Ref legal event code: R003

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN REFUSED

18R Application refused

Effective date: 20170925