EP1908121A4 - Drain-erweiterte mosfets mit diodenklemmung - Google Patents
Drain-erweiterte mosfets mit diodenklemmungInfo
- Publication number
- EP1908121A4 EP1908121A4 EP05772304A EP05772304A EP1908121A4 EP 1908121 A4 EP1908121 A4 EP 1908121A4 EP 05772304 A EP05772304 A EP 05772304A EP 05772304 A EP05772304 A EP 05772304A EP 1908121 A4 EP1908121 A4 EP 1908121A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- drain
- diode clamp
- mosfets
- extended
- extended mosfets
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/7817—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device
- H01L29/7818—Lateral DMOS transistors, i.e. LDMOS transistors structurally associated with at least one other device the other device being a pn-junction diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
- H01L29/1083—Substrate region of field-effect devices of field-effect transistors with insulated gate with an inactive supplementary region, e.g. for preventing punch-through, improving capacity effect or leakage current
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
- H01L29/66689—Lateral DMOS transistors, i.e. LDMOS transistors with a step of forming an insulating sidewall spacer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2005/025396 WO2007011354A1 (en) | 2005-07-18 | 2005-07-18 | Drain-extended mosfets with diode clamp |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1908121A1 EP1908121A1 (de) | 2008-04-09 |
EP1908121A4 true EP1908121A4 (de) | 2009-09-30 |
Family
ID=37669121
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP05772304A Ceased EP1908121A4 (de) | 2005-07-18 | 2005-07-18 | Drain-erweiterte mosfets mit diodenklemmung |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1908121A4 (de) |
JP (1) | JP2009502041A (de) |
KR (1) | KR100985373B1 (de) |
WO (1) | WO2007011354A1 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009059949A (ja) * | 2007-08-31 | 2009-03-19 | Sharp Corp | 半導体装置、および、半導体装置の製造方法 |
US7838940B2 (en) | 2007-12-04 | 2010-11-23 | Infineon Technologies Ag | Drain-extended field effect transistor |
KR100943504B1 (ko) | 2007-12-31 | 2010-02-22 | 주식회사 동부하이텍 | Mosfet 제조 방법 |
JP5534298B2 (ja) * | 2009-06-16 | 2014-06-25 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US8344472B2 (en) * | 2010-03-30 | 2013-01-01 | Freescale Semiconductor, Inc. | Semiconductor device and method |
KR101302108B1 (ko) | 2011-12-30 | 2013-08-30 | 주식회사 동부하이텍 | 드레인 확장형 모스 트랜지스터 제조 방법 |
JP5960445B2 (ja) * | 2012-02-23 | 2016-08-02 | ラピスセミコンダクタ株式会社 | 半導体装置 |
JP2013247188A (ja) * | 2012-05-24 | 2013-12-09 | Toshiba Corp | 半導体装置 |
US9129990B2 (en) * | 2012-06-29 | 2015-09-08 | Freescale Semiconductor, Inc. | Semiconductor device and driver circuit with drain and isolation structure interconnected through a diode circuit, and method of manufacture thereof |
KR101694091B1 (ko) * | 2016-03-03 | 2017-01-17 | 강희복 | Flyback 인덕터 구조 적용을 위한 음의 문턱전압 5-단자 엔모스 트랜지스터 소자를 이용한 전력 공급 회로 장치 |
KR101694092B1 (ko) * | 2016-03-03 | 2017-01-17 | 강희복 | 3상 Flyback 인덕터 구조 적용을 위한 음의 문턱전압 5-단자 엔모스 트랜지스터 소자를 이용한 전력 공급 회로 장치 |
JP6920137B2 (ja) * | 2017-08-31 | 2021-08-18 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
CN112713182B (zh) * | 2020-12-29 | 2022-06-28 | 浙大城市学院 | 一种碳化硅元胞级功率集成芯片结构 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030173624A1 (en) * | 2002-02-23 | 2003-09-18 | Fairchild Korea Semiconductor Ltd. | High breakdown voltage low on-resistance lateral DMOS transistor |
US20040159891A1 (en) * | 2003-02-18 | 2004-08-19 | Kabushiki Kaisha Toshiba | Semiconductor device |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0936674B1 (de) | 1998-02-10 | 2006-04-26 | STMicroelectronics S.r.l. | Integrierte Schaltung mit einem VDMOS-Transistor, der gegen Überspannungen zwischen Source und Gate geschützt ist |
US6924531B2 (en) | 2003-10-01 | 2005-08-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | LDMOS device with isolation guard rings |
-
2005
- 2005-07-18 KR KR1020087003859A patent/KR100985373B1/ko active IP Right Grant
- 2005-07-18 WO PCT/US2005/025396 patent/WO2007011354A1/en active Application Filing
- 2005-07-18 JP JP2008522752A patent/JP2009502041A/ja not_active Abandoned
- 2005-07-18 EP EP05772304A patent/EP1908121A4/de not_active Ceased
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030173624A1 (en) * | 2002-02-23 | 2003-09-18 | Fairchild Korea Semiconductor Ltd. | High breakdown voltage low on-resistance lateral DMOS transistor |
US20040159891A1 (en) * | 2003-02-18 | 2004-08-19 | Kabushiki Kaisha Toshiba | Semiconductor device |
Non-Patent Citations (2)
Title |
---|
PARTHASARATHY V ET AL: "Drain profile engineering of resurf LDMOS devices for ESD ruggedness", PROCEEDINGS OF THE 14TH. INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS. ISPSD'02. SANTA FE, NM, JUNE 4 - 7, 2002; [INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S], NEW YORK, NY : IEEE, US, 4 June 2002 (2002-06-04), pages 265 - 268, XP010591617, ISBN: 978-0-7803-7318-1 * |
See also references of WO2007011354A1 * |
Also Published As
Publication number | Publication date |
---|---|
KR20080033423A (ko) | 2008-04-16 |
JP2009502041A (ja) | 2009-01-22 |
EP1908121A1 (de) | 2008-04-09 |
WO2007011354A1 (en) | 2007-01-25 |
KR100985373B1 (ko) | 2010-10-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20080218 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): DE FR GB |
|
RBV | Designated contracting states (corrected) |
Designated state(s): DE FR GB |
|
A4 | Supplementary search report drawn up and despatched |
Effective date: 20090827 |
|
17Q | First examination report despatched |
Effective date: 20091029 |
|
DAX | Request for extension of the european patent (deleted) | ||
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R003 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION HAS BEEN REFUSED |
|
18R | Application refused |
Effective date: 20170925 |