JP2009502010A - 封じ込められた誘電体電極を有するマイクロキャビティプラズマ素子からなるアレイ - Google Patents
封じ込められた誘電体電極を有するマイクロキャビティプラズマ素子からなるアレイ Download PDFInfo
- Publication number
- JP2009502010A JP2009502010A JP2008521697A JP2008521697A JP2009502010A JP 2009502010 A JP2009502010 A JP 2009502010A JP 2008521697 A JP2008521697 A JP 2008521697A JP 2008521697 A JP2008521697 A JP 2008521697A JP 2009502010 A JP2009502010 A JP 2009502010A
- Authority
- JP
- Japan
- Prior art keywords
- array
- microcavity
- oxide
- thin film
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims abstract description 65
- 239000011521 glass Substances 0.000 claims abstract description 18
- 238000009461 vacuum packaging Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 31
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 229920000642 polymer Polymers 0.000 claims description 7
- 238000001228 spectrum Methods 0.000 claims description 5
- 239000011888 foil Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 abstract description 39
- 239000002184 metal Substances 0.000 abstract description 39
- 239000010408 film Substances 0.000 abstract description 24
- 238000005304 joining Methods 0.000 abstract description 6
- 239000007789 gas Substances 0.000 description 21
- 238000003491 array Methods 0.000 description 18
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 17
- 230000005855 radiation Effects 0.000 description 16
- 239000000463 material Substances 0.000 description 11
- 239000000203 mixture Substances 0.000 description 9
- 239000000919 ceramic Substances 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000010432 diamond Substances 0.000 description 4
- 229910003460 diamond Inorganic materials 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 229910052754 neon Inorganic materials 0.000 description 4
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 238000007567 mass-production technique Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000006467 substitution reaction Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000007743 anodising Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 206010004146 Basal cell carcinoma Diseases 0.000 description 1
- 208000013165 Bowen disease Diseases 0.000 description 1
- 208000019337 Bowen disease of the skin Diseases 0.000 description 1
- 201000004681 Psoriasis Diseases 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 208000009621 actinic keratosis Diseases 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 238000000879 optical micrograph Methods 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 238000002428 photodynamic therapy Methods 0.000 description 1
- 238000001126 phototherapy Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000002211 ultraviolet spectrum Methods 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J65/00—Lamps without any electrode inside the vessel; Lamps with at least one main electrode outside the vessel
- H01J65/04—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels
- H01J65/042—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels by an external electromagnetic field
- H01J65/046—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels by an external electromagnetic field the field being produced by using capacitive means around the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/20—Constructional details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel
- H01J11/10—AC-PDPs with at least one main electrode being out of contact with the plasma
- H01J11/18—AC-PDPs with at least one main electrode being out of contact with the plasma containing a plurality of independent closed structures for containing the gas, e.g. plasma tube array [PTA] display panels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/02—Details
- H01J61/04—Electrodes; Screens; Shields
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
- H05H1/2437—Multilayer systems
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Gas-Filled Discharge Tubes (AREA)
Abstract
【解決手段】本発明のマイクロキャビティプラズマ素子の構造は、任意の長さで、例えば、ロールで利用することができる、または製造することができる金属の薄膜に基づいている。本発明の素子において、マイクロキャビティ(12)のパターンが金属薄膜内に形成される。その後、酸化物が、該金属薄膜上及び(そこにプラズマが生成される)該マイクロキャビティ内に成長され、該マイクロキャビティを保護し、該薄膜を電気的に絶縁する。又、第2の金属薄膜も酸化物で封じ込められ、第1の封じ込められた金属薄膜に接合される。本発明のマイクロキャビティプラズマ素子アレイの場合、これら2つの封じ込められた金属薄膜の接合中に、特別なアラインメントは必要ない。例えば、薄いガラス層又は真空パッケージングは、放電媒質を該アレイ内に密封することができる。
【選択図】図1A
Description
本発明の様々な特徴は、特許請求の範囲に記載されている。
Claims (20)
- 中に複数のマイクロキャビティ(12)を含む導電性薄膜であり、酸化物(15)で封じ込めている第1の電極(16)と、
酸化物(19)で封じ込められた導電性薄膜である第2の電極(18)であって、前記第1及び第2の電極が一緒に接合され、酸化物が両電極間の接触を防いでいる前記第2の電極と、
前記マイクロキャビティ内に放電媒質を収容できる収容層(24、28、34)と、
を備える、マイクロキャビティプラズマ素子。 - 前記第1及び第2の電極、酸化物及び収容層は、前記アレイをフレキシブルにするのに十分な薄さである、請求項1に記載のアレイ。
- 前記第1及び第2の電極がアルミニウム箔を備え、前記酸化物が酸化アルミニウムを備える、請求項1に記載のアレイ。
- 前記第1及び第2の電極がチタン箔を備え、前記酸化物が酸化チタンを備える、請求項1に記載のアレイ。
- 前記収容層が、可視光スペクトル内で実質的に透過性である、請求項1に記載のアレイ。
- 前記収容層が光学フィルタを備える、請求項1に記載のアレイ。
- 前記第1及び第2の電極の各々内にマイクロキャビティを備える、請求項1に記載のアレイ。
- 前記収容層がガラスを備える、請求項1に記載のアレイ。
- 前記収容層がポリマー真空パッケージングを備え、前記放電媒質が、略大気圧で前記アレイ内に収容されている、請求項1に記載のアレイ。
- 前記第1の電極の酸化物上に第1の誘電体薄膜をさらに備える、請求項1に記載のアレイ。
- 前記第2の電極の酸化物上に第2の誘電体薄膜をさらに備える、請求項10に記載のアレイ。
- 前記第1及び第2の誘電体薄膜がガラスを備える、請求項11に記載のアレイ。
- 前記第2の電極がキャパシタ(18a、18b、18c)を備える、請求項1に記載のアレイ。
- マイクロキャビティプラズマ素子アレイを製造する方法であって、
複数のマイクロキャビティを有する第1の導電性薄膜を酸化物で封じ込めて第1の電極を形成するステップと、
第2の導電性薄膜を酸化物で封じ込めて第2の電極を形成するステップと、
前記第1及び第2の電極を一緒に接合するステップと、
放電媒質を前記アレイ内に収容するステップと、
を備える方法。 - 前記ステップ方法がロールトゥロールプロセスである、請求項14に記載の方法。
- 前記第1及び第2の薄膜がアルミニウム箔を備え、前記酸化物が酸化アルミニウムを備える、請求項14に記載の方法。
- 前記第1及び第2の薄膜がチタン箔を備え、前記酸化物が酸化チタンを備える、請求項14に記載の方法。
- 前記第1及び第2の導電性薄膜の酸化物が、誘電体薄膜で追加的に被覆される、請求項14に記載の方法。
- 前記誘電体薄膜がガラスを備える、請求項18に記載の方法。
- 前記収容するステップが、前記アレイ内に放電媒質を収容するために、前記第1及び第2の電極を真空パッケージングすることを備える、請求項14に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US69947505P | 2005-07-15 | 2005-07-15 | |
US60/699,475 | 2005-07-15 | ||
PCT/US2006/027667 WO2007011865A2 (en) | 2005-07-15 | 2006-07-17 | Microcavity plasma devices with dielectric encapsulated electrodes |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009502010A true JP2009502010A (ja) | 2009-01-22 |
JP5271080B2 JP5271080B2 (ja) | 2013-08-21 |
Family
ID=37669467
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008521697A Expired - Fee Related JP5271080B2 (ja) | 2005-07-15 | 2006-07-17 | 封じ込められた誘電体電極を有するマイクロキャビティプラズマ素子からなるアレイ |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1905057B1 (ja) |
JP (1) | JP5271080B2 (ja) |
KR (1) | KR20080031957A (ja) |
WO (1) | WO2007011865A2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010525508A (ja) * | 2007-04-17 | 2010-07-22 | サン−ゴバン グラス フランス | フラット放電ランプ |
JP2010527502A (ja) * | 2007-05-16 | 2010-08-12 | ザ ボード オブ トラスティーズ オブ ザ ユニバーシティ オブ イリノイ | 機械的応力低減型のマイクロキャビティ・プラズマ装置アレイおよび電極 |
KR101515729B1 (ko) | 2010-07-27 | 2015-04-28 | 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 | 봉입된 금속 마이크로팁 마이크로플라즈마 장치, 어레이 및 제조 방법 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009055786A1 (en) * | 2007-10-25 | 2009-04-30 | The Board Of Trustees Of The University Of Illinois | Electron injection-controlled microcavity plasma device and arrays |
US8456086B2 (en) | 2007-10-25 | 2013-06-04 | The Board Of Trustees Of The University Of Illinois | Microcavity plasma devices with non-uniform cross-section microcavities |
WO2009140509A1 (en) | 2008-05-14 | 2009-11-19 | The Board Of Trustees Of The University Of Illinois | Microcavity and microchannel plasma device arrays in a single, unitary sheet |
US8179032B2 (en) | 2008-09-23 | 2012-05-15 | The Board Of Trustees Of The University Of Illinois | Ellipsoidal microcavity plasma devices and powder blasting formation |
US8541946B2 (en) | 2009-12-17 | 2013-09-24 | The Board Of Trustees Of The University Of Illinois | Variable electric field strength metal and metal oxide microplasma lamps and fabrication |
US9484621B2 (en) * | 2012-11-02 | 2016-11-01 | Nokia Technologies Oy | Portable electronic device body having laser perforation apertures and associated fabrication method |
US8995658B2 (en) | 2013-02-13 | 2015-03-31 | Honeywell International Inc. | Physics-based key generation |
US9465960B2 (en) | 2013-12-04 | 2016-10-11 | Honeywell International Inc. | Physics-based authentication |
TWI548310B (zh) * | 2014-11-21 | 2016-09-01 | 財團法人工業技術研究院 | 電漿處理之模組化電極裝置 |
KR101723956B1 (ko) | 2015-11-26 | 2017-04-06 | 한림대학교 산학협력단 | 안구 치료용 마이크로 플라즈마 장치 |
DE102017116800B4 (de) * | 2017-07-25 | 2024-03-14 | Cinogy Gmbh | Elektrodenanordnung für eine dielektrisch behinderte Plasmabehandlung |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62262360A (ja) * | 1986-05-07 | 1987-11-14 | Canon Inc | 平面型光源装置 |
JPH02158049A (ja) * | 1988-10-10 | 1990-06-18 | Asea Brown Boveri Ag | 高出力ビーム発生装置 |
JP2001118541A (ja) * | 1999-10-21 | 2001-04-27 | Matsushita Electric Ind Co Ltd | 発光デバイス |
JP2003208850A (ja) * | 2002-01-15 | 2003-07-25 | Noritake Co Ltd | 平板型表示装置およびその製造方法 |
JP2003217519A (ja) * | 2002-01-25 | 2003-07-31 | Matsushita Electric Ind Co Ltd | ガス放電ランプ及びそれを用いた情報表示システム |
JP2005044742A (ja) * | 2003-07-25 | 2005-02-17 | Mitsubishi Electric Corp | 放電発光装置及びこれを用いた密着イメージセンサ |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3849735B2 (ja) * | 1997-04-10 | 2006-11-22 | 株式会社日立プラズマパテントライセンシング | プラズマディスプレイパネル及びその製造方法 |
US20020030437A1 (en) * | 2000-09-13 | 2002-03-14 | Nobuhiro Shimizu | Light-emitting device and backlight for flat display |
US6695664B2 (en) * | 2001-10-26 | 2004-02-24 | Board Of Trustees Of The University Of Illinois | Microdischarge devices and arrays |
KR100530765B1 (ko) * | 2002-10-04 | 2005-11-23 | 이규왕 | 나노 다공성 유전체를 이용한 플라즈마 발생장치 |
WO2007011388A2 (en) * | 2004-10-04 | 2007-01-25 | The Board Of Trustees Of The University Of Illinois | Microdischarge devices with encapsulated electrodes and method of making |
-
2006
- 2006-07-17 EP EP06787559.1A patent/EP1905057B1/en not_active Not-in-force
- 2006-07-17 KR KR1020087003573A patent/KR20080031957A/ko not_active Application Discontinuation
- 2006-07-17 JP JP2008521697A patent/JP5271080B2/ja not_active Expired - Fee Related
- 2006-07-17 WO PCT/US2006/027667 patent/WO2007011865A2/en active Application Filing
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62262360A (ja) * | 1986-05-07 | 1987-11-14 | Canon Inc | 平面型光源装置 |
JPH02158049A (ja) * | 1988-10-10 | 1990-06-18 | Asea Brown Boveri Ag | 高出力ビーム発生装置 |
JP2001118541A (ja) * | 1999-10-21 | 2001-04-27 | Matsushita Electric Ind Co Ltd | 発光デバイス |
JP2003208850A (ja) * | 2002-01-15 | 2003-07-25 | Noritake Co Ltd | 平板型表示装置およびその製造方法 |
JP2003217519A (ja) * | 2002-01-25 | 2003-07-31 | Matsushita Electric Ind Co Ltd | ガス放電ランプ及びそれを用いた情報表示システム |
JP2005044742A (ja) * | 2003-07-25 | 2005-02-17 | Mitsubishi Electric Corp | 放電発光装置及びこれを用いた密着イメージセンサ |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010525508A (ja) * | 2007-04-17 | 2010-07-22 | サン−ゴバン グラス フランス | フラット放電ランプ |
JP2010527502A (ja) * | 2007-05-16 | 2010-08-12 | ザ ボード オブ トラスティーズ オブ ザ ユニバーシティ オブ イリノイ | 機械的応力低減型のマイクロキャビティ・プラズマ装置アレイおよび電極 |
KR101515729B1 (ko) | 2010-07-27 | 2015-04-28 | 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 | 봉입된 금속 마이크로팁 마이크로플라즈마 장치, 어레이 및 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
EP1905057B1 (en) | 2016-03-09 |
EP1905057A4 (en) | 2012-06-27 |
WO2007011865A3 (en) | 2009-04-02 |
WO2007011865A2 (en) | 2007-01-25 |
JP5271080B2 (ja) | 2013-08-21 |
EP1905057A2 (en) | 2008-04-02 |
KR20080031957A (ko) | 2008-04-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5271080B2 (ja) | 封じ込められた誘電体電極を有するマイクロキャビティプラズマ素子からなるアレイ | |
US7385350B2 (en) | Arrays of microcavity plasma devices with dielectric encapsulated electrodes | |
JP5399901B2 (ja) | 埋込み周囲電極マイクロキャビティプラズマデバイスアレイ、電気的相互接続及び形成方法 | |
US7573202B2 (en) | Metal/dielectric multilayer microdischarge devices and arrays | |
JP5318857B2 (ja) | 機械的応力低減型のマイクロキャビティ・プラズマ装置アレイおよび電極 | |
US6695664B2 (en) | Microdischarge devices and arrays | |
JP5435868B2 (ja) | マイクロ放電装置、マイクロ放電装置アレイ、誘電体で覆われた電極を製造する方法 | |
WO2009140509A1 (en) | Microcavity and microchannel plasma device arrays in a single, unitary sheet | |
JP2008519422A (ja) | 第1及び第2の基板を有するマイクロプラズマ素子 | |
US8362699B2 (en) | Interwoven wire mesh microcavity plasma arrays | |
JP5346946B2 (ja) | 均一でない断面をもつマイクロキャビティを有するマイクロキャビティプラズマデバイス | |
Park | Eden et al. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090605 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110809 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111108 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111222 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20111222 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120821 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20121120 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20121128 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121220 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130416 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130510 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 Ref document number: 5271080 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |