JP2009267261A5 - - Google Patents

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Publication number
JP2009267261A5
JP2009267261A5 JP2008117733A JP2008117733A JP2009267261A5 JP 2009267261 A5 JP2009267261 A5 JP 2009267261A5 JP 2008117733 A JP2008117733 A JP 2008117733A JP 2008117733 A JP2008117733 A JP 2008117733A JP 2009267261 A5 JP2009267261 A5 JP 2009267261A5
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JP
Japan
Prior art keywords
thin film
gas supply
substrate
semiconductor layer
supply port
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008117733A
Other languages
English (en)
Japanese (ja)
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JP2009267261A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2008117733A priority Critical patent/JP2009267261A/ja
Priority claimed from JP2008117733A external-priority patent/JP2009267261A/ja
Publication of JP2009267261A publication Critical patent/JP2009267261A/ja
Publication of JP2009267261A5 publication Critical patent/JP2009267261A5/ja
Pending legal-status Critical Current

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JP2008117733A 2008-04-28 2008-04-28 薄膜製造装置、薄膜製造方法、薄膜太陽電池製造装置及び薄膜太陽電池製造方法 Pending JP2009267261A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008117733A JP2009267261A (ja) 2008-04-28 2008-04-28 薄膜製造装置、薄膜製造方法、薄膜太陽電池製造装置及び薄膜太陽電池製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008117733A JP2009267261A (ja) 2008-04-28 2008-04-28 薄膜製造装置、薄膜製造方法、薄膜太陽電池製造装置及び薄膜太陽電池製造方法

Publications (2)

Publication Number Publication Date
JP2009267261A JP2009267261A (ja) 2009-11-12
JP2009267261A5 true JP2009267261A5 (zh) 2011-02-10

Family

ID=41392696

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008117733A Pending JP2009267261A (ja) 2008-04-28 2008-04-28 薄膜製造装置、薄膜製造方法、薄膜太陽電池製造装置及び薄膜太陽電池製造方法

Country Status (1)

Country Link
JP (1) JP2009267261A (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8298887B2 (en) * 2009-12-03 2012-10-30 Applied Materials, Inc. High mobility monolithic p-i-n diodes
CN102315148A (zh) * 2010-06-30 2012-01-11 上方能源技术(杭州)有限公司 用于镀膜的基板传输装置和基板传输方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6354934A (ja) * 1986-08-25 1988-03-09 Canon Inc 気相励起装置
JPH0324269A (ja) * 1989-06-21 1991-02-01 Canon Inc 堆積膜形成装置
JPH0660414B2 (ja) * 1989-09-27 1994-08-10 株式会社芦田 Ｅｃｒプラズマｃｖｄ装置
JPH09275222A (ja) * 1996-04-05 1997-10-21 Tokuyama Corp 非晶質半導体素子
JP3694282B2 (ja) * 2002-07-22 2005-09-14 株式会社メガチップス 単結晶薄膜形成方法

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