JP2009246366A5 - - Google Patents

Download PDF

Info

Publication number
JP2009246366A5
JP2009246366A5 JP2009080291A JP2009080291A JP2009246366A5 JP 2009246366 A5 JP2009246366 A5 JP 2009246366A5 JP 2009080291 A JP2009080291 A JP 2009080291A JP 2009080291 A JP2009080291 A JP 2009080291A JP 2009246366 A5 JP2009246366 A5 JP 2009246366A5
Authority
JP
Japan
Prior art keywords
layer
strain
substrate
deformable
strain structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009080291A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009246366A (ja
JP5731104B2 (ja
Filing date
Publication date
Priority claimed from FR0852034A external-priority patent/FR2929447B1/fr
Application filed filed Critical
Publication of JP2009246366A publication Critical patent/JP2009246366A/ja
Publication of JP2009246366A5 publication Critical patent/JP2009246366A5/ja
Application granted granted Critical
Publication of JP5731104B2 publication Critical patent/JP5731104B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2009080291A 2008-03-28 2009-03-27 ひずみ層の製造方法 Expired - Fee Related JP5731104B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0852034 2008-03-28
FR0852034A FR2929447B1 (fr) 2008-03-28 2008-03-28 Procede de realisation d'une couche contrainte

Publications (3)

Publication Number Publication Date
JP2009246366A JP2009246366A (ja) 2009-10-22
JP2009246366A5 true JP2009246366A5 (enExample) 2014-05-22
JP5731104B2 JP5731104B2 (ja) 2015-06-10

Family

ID=39944250

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009080291A Expired - Fee Related JP5731104B2 (ja) 2008-03-28 2009-03-27 ひずみ層の製造方法

Country Status (5)

Country Link
US (1) US7863156B2 (enExample)
EP (1) EP2105958B1 (enExample)
JP (1) JP5731104B2 (enExample)
AT (1) ATE515795T1 (enExample)
FR (1) FR2929447B1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3040108B1 (fr) 2015-08-12 2017-08-11 Commissariat Energie Atomique Procede de fabrication d'une structure semi-conductrice avec collage direct temporaire exploitant une couche poreuse
DE102015216997A1 (de) * 2015-09-04 2017-03-09 Robert Bosch Gmbh Kapazitive Struktur und Verfahren zum Bestimmen einer Ladungsmenge unter Verwendung der kapazitiven Struktur
US12453287B2 (en) 2019-06-03 2025-10-21 Gregory Scott Fischer Optical actuator
FR3108788B1 (fr) * 2020-03-24 2026-01-23 Soitec Silicon On Insulator Procédé de fabrication d’une structure piézoélectrique pour dispositif radiofréquence et pouvant servir pour le transfert d’une couche piézoélectrique, et procédé de transfert d’une telle couche piézoélectrique

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0818115A (ja) * 1994-07-04 1996-01-19 Matsushita Electric Ind Co Ltd 複合圧電デバイス
US5834882A (en) * 1996-12-11 1998-11-10 Face International Corp. Multi-layer piezoelectric transformer
JP2000277715A (ja) * 1999-03-25 2000-10-06 Matsushita Electric Ind Co Ltd 半導体基板,その製造方法及び半導体装置
US6603156B2 (en) * 2001-03-31 2003-08-05 International Business Machines Corporation Strained silicon on insulator structures
US6614144B2 (en) * 2001-10-04 2003-09-02 Force International, Corp. Multilayer piezoelectric transformer
US6767749B2 (en) * 2002-04-22 2004-07-27 The United States Of America As Represented By The Secretary Of The Navy Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting
US7176528B2 (en) * 2003-02-18 2007-02-13 Corning Incorporated Glass-based SOI structures
US6992025B2 (en) * 2004-01-12 2006-01-31 Sharp Laboratories Of America, Inc. Strained silicon on insulator from film transfer and relaxation by hydrogen implantation
WO2006097522A1 (en) * 2005-03-18 2006-09-21 Bae Systems Plc An actuator
JP4630733B2 (ja) * 2005-05-31 2011-02-09 株式会社東芝 半導体装置

Similar Documents

Publication Publication Date Title
EP2226934B1 (en) Composite piezoelectric substrate manufacturing method
CN109786229B (zh) 一种晶圆键合方法以及相应的异质衬底制备的方法
US11705880B2 (en) Process for producing a micro-electro-mechanical system from a transferred piezoelectric or ferroelectric layer
US12356858B2 (en) Method for the production of a single-crystal film, in particular piezoelectric
JP5506035B2 (ja) アクチュエータの製造方法
WO2010067794A1 (ja) 圧電性複合基板の製造方法、および圧電素子の製造方法
CN104064670B (zh) 压电薄膜元件、压电传感器和振动发电机
JP5731104B2 (ja) ひずみ層の製造方法
US12448284B2 (en) Membrane transfer method
EP4154328B1 (en) Integration of semiconductor membranes with piezoelectric substrates
JP2010089993A (ja) 2つの部材の接合方法、および接合体
JP2025501705A5 (enExample)
JP2006298694A (ja) 圧電複合基板及びその製造方法
JPH06196770A (ja) 圧電素子の製造方法
JP7863811B2 (ja) 圧電膜集積デバイス、その製造方法、及び音響振動センサ
CN116896975A (zh) 压电膜集成器件及其制造方法、以及声学振动传感器
Ivan et al. PMN-PT piezoelectric material and related applications in Silicon-integrated devices like microactuators and energy harvesters
CN116896976A (zh) 压电膜集成器件及其制造方法、以及声学振动传感器
CN116896970A (zh) 压电体薄膜接合基板及其制造方法
CN116896971A (zh) 压电体薄膜接合基板及其制造方法