JP2009246366A5 - - Google Patents
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- Publication number
- JP2009246366A5 JP2009246366A5 JP2009080291A JP2009080291A JP2009246366A5 JP 2009246366 A5 JP2009246366 A5 JP 2009246366A5 JP 2009080291 A JP2009080291 A JP 2009080291A JP 2009080291 A JP2009080291 A JP 2009080291A JP 2009246366 A5 JP2009246366 A5 JP 2009246366A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- strain
- substrate
- deformable
- strain structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000758 substrate Substances 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 34
- 230000007704 transition Effects 0.000 claims 6
- 150000001875 compounds Chemical class 0.000 claims 5
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 claims 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims 2
- QRNPTSGPQSOPQK-UHFFFAOYSA-N magnesium zirconium Chemical compound [Mg].[Zr] QRNPTSGPQSOPQK-UHFFFAOYSA-N 0.000 claims 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims 2
- 239000002344 surface layer Substances 0.000 claims 2
- WKBPZYKAUNRMKP-UHFFFAOYSA-N 1-[2-(2,4-dichlorophenyl)pentyl]1,2,4-triazole Chemical compound C=1C=C(Cl)C=C(Cl)C=1C(CCC)CN1C=NC=N1 WKBPZYKAUNRMKP-UHFFFAOYSA-N 0.000 claims 1
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims 1
- 229910017119 AlPO Inorganic materials 0.000 claims 1
- 229910013641 LiNbO 3 Inorganic materials 0.000 claims 1
- 229910001329 Terfenol-D Inorganic materials 0.000 claims 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims 1
- 229910002113 barium titanate Inorganic materials 0.000 claims 1
- 239000000919 ceramic Substances 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 230000004907 flux Effects 0.000 claims 1
- 229910000154 gallium phosphate Inorganic materials 0.000 claims 1
- LWFNJDOYCSNXDO-UHFFFAOYSA-K gallium;phosphate Chemical compound [Ga+3].[O-]P([O-])([O-])=O LWFNJDOYCSNXDO-UHFFFAOYSA-K 0.000 claims 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims 1
- QNZFKUWECYSYPS-UHFFFAOYSA-N lead zirconium Chemical compound [Zr].[Pb] QNZFKUWECYSYPS-UHFFFAOYSA-N 0.000 claims 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- ZBSCCQXBYNSKPV-UHFFFAOYSA-N oxolead;oxomagnesium;2,4,5-trioxa-1$l^{5},3$l^{5}-diniobabicyclo[1.1.1]pentane 1,3-dioxide Chemical class [Mg]=O.[Pb]=O.[Pb]=O.[Pb]=O.O1[Nb]2(=O)O[Nb]1(=O)O2 ZBSCCQXBYNSKPV-UHFFFAOYSA-N 0.000 claims 1
- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 claims 1
- 239000011734 sodium Substances 0.000 claims 1
- XMVONEAAOPAGAO-UHFFFAOYSA-N sodium tungstate Chemical compound [Na+].[Na+].[O-][W]([O-])(=O)=O XMVONEAAOPAGAO-UHFFFAOYSA-N 0.000 claims 1
- 239000011031 topaz Substances 0.000 claims 1
- 229910052853 topaz Inorganic materials 0.000 claims 1
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0852034 | 2008-03-28 | ||
| FR0852034A FR2929447B1 (fr) | 2008-03-28 | 2008-03-28 | Procede de realisation d'une couche contrainte |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009246366A JP2009246366A (ja) | 2009-10-22 |
| JP2009246366A5 true JP2009246366A5 (enExample) | 2014-05-22 |
| JP5731104B2 JP5731104B2 (ja) | 2015-06-10 |
Family
ID=39944250
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009080291A Expired - Fee Related JP5731104B2 (ja) | 2008-03-28 | 2009-03-27 | ひずみ層の製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7863156B2 (enExample) |
| EP (1) | EP2105958B1 (enExample) |
| JP (1) | JP5731104B2 (enExample) |
| AT (1) | ATE515795T1 (enExample) |
| FR (1) | FR2929447B1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3040108B1 (fr) | 2015-08-12 | 2017-08-11 | Commissariat Energie Atomique | Procede de fabrication d'une structure semi-conductrice avec collage direct temporaire exploitant une couche poreuse |
| DE102015216997A1 (de) * | 2015-09-04 | 2017-03-09 | Robert Bosch Gmbh | Kapazitive Struktur und Verfahren zum Bestimmen einer Ladungsmenge unter Verwendung der kapazitiven Struktur |
| US12453287B2 (en) | 2019-06-03 | 2025-10-21 | Gregory Scott Fischer | Optical actuator |
| FR3108788B1 (fr) * | 2020-03-24 | 2026-01-23 | Soitec Silicon On Insulator | Procédé de fabrication d’une structure piézoélectrique pour dispositif radiofréquence et pouvant servir pour le transfert d’une couche piézoélectrique, et procédé de transfert d’une telle couche piézoélectrique |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0818115A (ja) * | 1994-07-04 | 1996-01-19 | Matsushita Electric Ind Co Ltd | 複合圧電デバイス |
| US5834882A (en) * | 1996-12-11 | 1998-11-10 | Face International Corp. | Multi-layer piezoelectric transformer |
| JP2000277715A (ja) * | 1999-03-25 | 2000-10-06 | Matsushita Electric Ind Co Ltd | 半導体基板,その製造方法及び半導体装置 |
| US6603156B2 (en) * | 2001-03-31 | 2003-08-05 | International Business Machines Corporation | Strained silicon on insulator structures |
| US6614144B2 (en) * | 2001-10-04 | 2003-09-02 | Force International, Corp. | Multilayer piezoelectric transformer |
| US6767749B2 (en) * | 2002-04-22 | 2004-07-27 | The United States Of America As Represented By The Secretary Of The Navy | Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting |
| US7176528B2 (en) * | 2003-02-18 | 2007-02-13 | Corning Incorporated | Glass-based SOI structures |
| US6992025B2 (en) * | 2004-01-12 | 2006-01-31 | Sharp Laboratories Of America, Inc. | Strained silicon on insulator from film transfer and relaxation by hydrogen implantation |
| WO2006097522A1 (en) * | 2005-03-18 | 2006-09-21 | Bae Systems Plc | An actuator |
| JP4630733B2 (ja) * | 2005-05-31 | 2011-02-09 | 株式会社東芝 | 半導体装置 |
-
2008
- 2008-03-28 FR FR0852034A patent/FR2929447B1/fr not_active Expired - Fee Related
-
2009
- 2009-03-23 EP EP09155871A patent/EP2105958B1/fr not_active Not-in-force
- 2009-03-23 AT AT09155871T patent/ATE515795T1/de not_active IP Right Cessation
- 2009-03-24 US US12/410,161 patent/US7863156B2/en not_active Expired - Fee Related
- 2009-03-27 JP JP2009080291A patent/JP5731104B2/ja not_active Expired - Fee Related
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