JP2009246207A5 - - Google Patents

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Publication number
JP2009246207A5
JP2009246207A5 JP2008092400A JP2008092400A JP2009246207A5 JP 2009246207 A5 JP2009246207 A5 JP 2009246207A5 JP 2008092400 A JP2008092400 A JP 2008092400A JP 2008092400 A JP2008092400 A JP 2008092400A JP 2009246207 A5 JP2009246207 A5 JP 2009246207A5
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JP
Japan
Prior art keywords
semiconductor layer
compound semiconductor
infrared sensor
layer
type doped
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JP2008092400A
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English (en)
Japanese (ja)
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JP5266521B2 (ja
JP2009246207A (ja
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Priority to JP2008092400A priority Critical patent/JP5266521B2/ja
Priority claimed from JP2008092400A external-priority patent/JP5266521B2/ja
Publication of JP2009246207A publication Critical patent/JP2009246207A/ja
Publication of JP2009246207A5 publication Critical patent/JP2009246207A5/ja
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Publication of JP5266521B2 publication Critical patent/JP5266521B2/ja
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JP2008092400A 2008-03-31 2008-03-31 赤外線センサ、及び赤外線センサｉｃ Active JP5266521B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008092400A JP5266521B2 (ja) 2008-03-31 2008-03-31 赤外線センサ、及び赤外線センサｉｃ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008092400A JP5266521B2 (ja) 2008-03-31 2008-03-31 赤外線センサ、及び赤外線センサｉｃ

Publications (3)

Publication Number Publication Date
JP2009246207A JP2009246207A (ja) 2009-10-22
JP2009246207A5 true JP2009246207A5 (zh) 2011-05-19
JP5266521B2 JP5266521B2 (ja) 2013-08-21

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JP2008092400A Active JP5266521B2 (ja) 2008-03-31 2008-03-31 赤外線センサ、及び赤外線センサｉｃ

Country Status (1)

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JP (1) JP5266521B2 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5731754B2 (ja) * 2010-02-18 2015-06-10 旭化成エレクトロニクス株式会社 赤外線センサ
JP6132746B2 (ja) 2013-11-05 2017-05-24 浜松ホトニクス株式会社 赤外線検出素子
WO2017138778A1 (ko) * 2016-02-12 2017-08-17 엘지이노텍(주) 반도체 소자
JP6750996B2 (ja) * 2016-10-05 2020-09-02 旭化成エレクトロニクス株式会社 赤外線センサ
JP6908367B2 (ja) * 2016-10-19 2021-07-28 旭化成エレクトロニクス株式会社 赤外線発光素子
JP6917352B2 (ja) 2018-01-18 2021-08-11 旭化成エレクトロニクス株式会社 赤外線検出素子
US11935973B2 (en) 2018-02-28 2024-03-19 Asahi Kasei Microdevices Corporation Infrared detecting device
JP6917350B2 (ja) * 2018-02-28 2021-08-11 旭化成エレクトロニクス株式会社 赤外線検出素子
JP7027970B2 (ja) * 2018-03-07 2022-03-02 住友電気工業株式会社 半導体受光デバイス、赤外線検知装置
JP2021057365A (ja) * 2019-09-26 2021-04-08 旭化成エレクトロニクス株式会社 赤外線センサ
JP2021057366A (ja) * 2019-09-26 2021-04-08 旭化成エレクトロニクス株式会社 赤外線センサ

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1667239A4 (en) * 2003-09-09 2008-08-06 Asahi Kasei Emd Corp INFRARED SENSOR IC, INFRARED SENSOR AND MANUFACTURING METHOD THEREFOR
GB2451202B (en) * 2006-03-21 2011-12-21 Shimon Maimon Reduced dark current photodetector
JP5063929B2 (ja) * 2006-04-28 2012-10-31 旭化成エレクトロニクス株式会社 赤外線センサ

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