JP2009231740A - Back grinding film and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate film for back grinding that prevents a semiconductor wafer from being warped easily and has excellent dimensional stability in the back grinding process of the thin-type semiconductor wafer, and to provide a back grinding film. <P>SOLUTION: The substrate film for back grinding has: a layer A containing 0 to 60 wt.% of vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer hydrogenation product and 40 to 100 wt.% of polypropylene-based resin; a layer B containing 50 to 100 wt.% of vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer hydrogenation product and 0 to 50 wt.% of polypropylene-based resin; and a layer C containing 0 to 60 wt.% of vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer hydrogenation product and 40 to 100 wt.% of polypropylene-based resin. The present invention relates to the substrate film for back grinding where the layers A, B, C are laminated in this order and the manufacturing method of the substrate film. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a film used by being attached to a semiconductor wafer when the semiconductor wafer is back-ground (hereinafter referred to as “back grinding”).

  When manufacturing a semiconductor, after forming a circuit on the surface of a semiconductor wafer by ion implantation, etching, etc., the surface opposite to the circuit formation surface of the wafer is ground with a grinder to make the wafer a predetermined thickness. In general, a back grinding process is performed.

  In order to prevent damage to the semiconductor wafer and to facilitate grinding during back grinding of this semiconductor wafer, a surface protective film (bag grind film) for back grinding is attached to the circuit forming surface (front surface) of the semiconductor wafer. A way to protect is taken.

  The bag grind film is heated by frictional heat during back grinding, and is cooled to room temperature after the back grinding. Conventionally used bag grind films are known to warp on the semiconductor wafer side because they shrink in the cooling process after the back grind is completed.

  In recent years, due to the progress of ultra-thin semiconductor wafers (less than 50 μm), the semiconductor wafer adhered following the warp of the bag grind film is likely to be warped, and the semiconductor wafer chip is chipped. (For example, FIG. 1).

  Therefore, there has been a demand for a bag grind film excellent in dimensional stability in which warpage does not easily occur in a back grind process of a thin semiconductor wafer.

  In order to solve the problem of warping of the wafer, Patent Document 1 proposes a protective sheet for processing a semiconductor wafer obtained by laminating an EVA film on an adhesive layer and further laminating an adhesive and a PET film. (Example 1).

  Patent Document 2 proposes a pressure-sensitive adhesive film for protecting a semiconductor wafer, in which a pressure-sensitive adhesive is applied to the surface of a base film made of a polyolefin-based copolymer such as an ethylene-vinyl acetate copolymer. Range, Example 1 etc.).

Patent Document 3 describes a back grind tape made of an elastomer containing at least one selected from a hydrogenated diene block polymer and a polar group-modified olefin polymer.
JP 2006-128292 A JP 2006-261482 A JP 2005-191296 A

  An object of the present invention is to provide a base film for bag grind and a back grind film having excellent dimensional stability in which warpage of the semiconductor wafer hardly occurs in a back grind process of a thin semiconductor wafer.

  As a result of intensive studies to solve the above problems, the present inventor has found that a hydrogenated vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer and a polypropylene resin each contain a predetermined ratio, It has been found that a base film for back grinding consisting of B layer / C layer is excellent in dimensional stability in the back grinding process. Based on this knowledge, further studies have been made and the present invention has been completed.

  That is, the present invention provides the following backgrind base film and method for producing the same.

  Item 1. A layer containing 0 to 60% by weight of a hydrogenated vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer and 40 to 100% by weight of a polypropylene-based resin, a vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer B layer containing 50 to 100% by weight of hydrogenated product and 0 to 50% by weight of polypropylene resin, and 0 to 60% by weight of hydrogenated vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer and polypropylene resin 40 A substrate film for back grinding having a C layer containing ˜100% by weight and laminated in the order of A layer / B layer / C layer.

  Item 2. Item 2. The substrate film for backgrinding according to Item 1, wherein the thickness is 50 to 300 μm.

  Item 3. Item 3. A back grind film having a pressure-sensitive adhesive layer and a release film on the surface of the back grind substrate film according to item 1 or 2.

  Item 4. A back grind film according to Item 3, which is adhered to the front surface (circuit surface) of a semiconductor wafer, the back surface of the semiconductor wafer is ground, and the back grind film is removed from the semiconductor wafer. Method. Item 5. A method for producing a backgrind substrate film, comprising a vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer hydrogenated product of 0 to 60% by weight and a polypropylene-based resin of 40 to 100% by weight; B layer resin containing 50-100% by weight of hydrogenated vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer and 0-50% by weight of polypropylene resin, and vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer A production method comprising coextruding a resin for a C layer containing 0 to 60% by weight of a hydrogenated polymer and 40 to 100% by weight of a polypropylene resin in the order of A layer / B layer / C layer .

  The base film for bag grinding according to the present invention is excellent in dimensional stability because the semiconductor wafer is hardly warped in the back grinding process of a thin semiconductor wafer. Moreover, blocking at the time of winding the base film can be effectively suppressed.

I. Back Grind Film The back grind base film of the present invention comprises at least three layers including the following A layer / B layer / C layer, and a three layer back grind base film is a typical example.

  A layer containing 0 to 60% by weight of a hydrogenated vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer and 40 to 100% by weight of a polypropylene-based resin, a vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer B layer containing 50 to 100% by weight of hydrogenated product and 0 to 50% by weight of polypropylene resin, and 0 to 60% by weight of hydrogenated vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer and polypropylene resin 40 Examples include a base film for back grind having a C layer containing ˜100% by weight and laminated in the order of A layer / B layer / C layer.

  This base film for back grinding has high dimensional stability against heat generated in the back grinding process, and can suppress warping of the semiconductor wafer. Moreover, the occurrence of blocking can be suppressed even when the substrate film is rolled up.

  Here, the hydrogenated vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer is a compound obtained by hydrogenating a copolymer of vinyl aromatic hydrocarbon and conjugated diene hydrocarbon. The compound is commercially available or can be easily produced by a known method. The vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer may be either random or block, but is preferably a block.

  Examples of the vinyl aromatic hydrocarbon include styrene, α-methylstyrene, p-methylstyrene, divinylbenzene, 1,1-diphenylethylene, N, N-dimethyl-p-aminoethylstyrene, N, N-diethyl- Examples thereof include p-aminoethylstyrene, and these may be used alone or in combination of two or more. Styrene is particularly preferred.

  The conjugated diene hydrocarbon is a diolefin having a pair of conjugated double bonds, such as 1,3-butadiene, 2-methyl-1,3-butadiene (isoprene), 2,3-dimethyl-1,3. -Butadiene, 1,3-pentadiene, 2-methyl-1,3-pentadiene, 1,3-hexadiene and the like, and particularly common ones include 1,3-butadiene and isoprene. These may be used alone or in combination of two or more. In particular, butadiene is preferred.

  The content of vinyl aromatic hydrocarbon units in the hydrogenated vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer is usually 5 to 40% by weight, preferably 5 to 15% by weight. The content of hydrocarbon units is usually 60 to 95% by weight, preferably 85 to 95% by weight. The content of styrene monomer units is measured using an ultraviolet spectrophotometer or a nuclear magnetic resonance apparatus (NMR), and the content of diene monomer units is measured using a nuclear magnetic resonance apparatus (NMR). be able to. Hydrogen is added to prevent the hydrogenated styrene-butadiene copolymer from being fragile due to good compatibility with propylene and due to oxidative degradation caused by the presence of double bonds in butadiene. is there.

  The hardness (JIS K6253 durometer type A) of the hydrogenated vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer is about 40 to 90, preferably about 55 to 85. Its specific gravity (ASTM D297) is about 0.85 to 1.0, and MFR (ASTM D1238: 230 ° C., 21.2 N) is about 2 to 6 g / 10 min.

  The weight average molecular weight (Mw) of the hydrogenated vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer may be, for example, about 100,000 to 500,000, preferably about 150,000 to 300,000. The weight average molecular weight can be measured using commercially available standard gel permeation chromatography (GPC).

  The hydrogenated vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer used is saturated by hydrogenating a double bond derived from the conjugated diene hydrocarbon by a known method (for example, nickel catalyst). It is good to keep. This is because it becomes a more stable resin excellent in heat resistance, chemical resistance, durability and the like. The hydrogenation rate of the hydrogenated product of the vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer is 85% or more of the double bond based on the conjugated diene hydrocarbon in the copolymer, preferably 90% or more. Preferably it is 95% or more. This hydrogenation rate can be measured using a nuclear magnetic resonance apparatus (NMR).

  The polypropylene resin (PP) is preferably crystalline. Examples of the crystalline propylene-based resin include a propylene homopolymer or a random or block copolymer of propylene and a small amount of α-olefin and / or ethylene.

  When the polypropylene resin is a copolymer, in the case of a random copolymer, the copolymerization ratio of other α-olefin and / or ethylene in the copolymer is generally 10% by weight or less in total, preferably In the case of a block copolymer, the copolymerization ratio of other α-olefins and / or ethylene is generally 1 to 40% by weight, preferably 1 to 25% by weight. %, More preferably 2 to 20% by weight, particularly preferably 3 to 15% by weight. These polypropylene polymers may be a mixture of two or more polymers. As an index of the crystallinity of polypropylene, for example, a melting point, a heat of crystal fusion, and the like are used.

  The polypropylene-based resin can employ multistage polymerization by combining a gas phase polymerization method, a bulk polymerization method, a solvent polymerization method and any combination thereof, and there is no particular limitation on the number average molecular weight of the polymer, Preferably, it is adjusted to 10,000 to 1,000,000.

  The crystalline polypropylene resin has an MFR (melt flow rate) of 0.5 to 20 g / 10 minutes, preferably 0.5, when measured at a temperature of 230 ° C. and a load of 21.18 N in accordance with JIS K7210. The thing of the range of-10g / 10min is good.

  The B layer, which is an intermediate layer of the three-layer backgrind base film shown above, contains 50 to 100% by weight (preferably 60 to 100% by weight) of a hydrogenated vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer. %, More preferably 70 to 100 wt%) and 0 to 50 wt% (preferably 0 to 40 wt%, more preferably 0 to 30 wt%) of polypropylene resin. By setting it as this composition ratio, it mainly has the function which gives the outstanding dimensional stability with respect to a heat | fever to a base film for bag grinds, and makes it hard to produce a curvature.

  The A layer and the C layer, which are the front and back layers of the three-layer back grind base film shown above, are the same or different, and the hydrogenated vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer is 0 to 60 wt. % (Preferably 20 to 50% by weight, more preferably 30 to 50% by weight) and polypropylene resin 40 to 100% by weight (preferably 50 to 80% by weight, more preferably 50 to 70% by weight). Yes. By setting it as this composition, blocking can be effectively suppressed mainly in the state where this base film was rolled up.

  The resin composition and ratio of the A layer and the C layer may be the same or different. The proportion of the hydrogenated product of the vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer does not necessarily have to be symmetrical, and it may be preferable for the warp to be arranged in an inclined manner.

  The total thickness of layer A to layer C of the three-layer backgrind substrate film shown above is usually 50 to 300 μm, preferably 60 to 250 μm, more preferably 70 to 200 μm. When the total thickness of the three-layer back grind base film is 70 to 200 μm, the thickness of the A layer is usually 5 to 60 μm, preferably 20 to 40 μm. The thickness of B layer is 30-190 micrometers normally, Preferably it is 30-160 micrometers. The thickness of C layer is 5-60 micrometers normally, Preferably it is 20-40 micrometers. The thicknesses of the A layer and the C layer are preferably equal.

  In particular, in order to maintain the dimensional stability against heat of the base film for back grinding, the thickness of the B layer with respect to the total thickness of the A layer to the C layer is 5 to 90%, more preferably 30 to 80%, and particularly 50 to 80%. % Is preferable.

  Specifically, the thicknesses of the A layer, the B layer, and the C layer can be changed according to the resin composition and the ratio of each layer.

  For example, when the resin composition of the A layer, the B layer, and the C layer and the ratio thereof are approximated, warpage can be suppressed in each layer and blocking in the outer layers (A layer and C layer) can also be suppressed. For example, the A layer and the C layer are the same or different and contain about 15 to 50% by weight of a hydrogenated vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer and about 85 to 50% by weight of a polypropylene resin. When the B layer contains about 50 to 100% by weight of a hydrogenated vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer and about 0 to 50% by weight of a polypropylene resin, the A layer, the B layer, The thickness ratio of the C layer can be, for example, about 15 to 35% / 30 to 70% / 15 to 35%.

  Further, the ratio of hydrogenated vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer in the A layer and the C layer is small, and the hydrogenated vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer in the B layer. When the ratio is large, the B layer mainly has a function of suppressing warping, and the outer layers (A layer and C layer) mainly have a function of suppressing blocking, and each layer shares a different role. . For example, the A layer and the C layer are the same or different, and the hydrogenated vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer is added in an amount of 0 to less than about 15 wt% and the polypropylene resin exceeds about 85 wt%. When the layer B contains about 85 to 100% by weight of a hydrogenated vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer and about 0 to 15% by weight of a polypropylene resin, the layer A, B The thickness ratio of the layer and the C layer can be, for example, about 5 to 15% / 70 to 90% / 5 to 15%.

  A known pressure-sensitive adhesive is coated on the surface of the layer A of the backgrind substrate film obtained as described above to form a pressure-sensitive adhesive layer, and a release film is further provided on the pressure-sensitive adhesive layer. For example, the thickness of the pressure-sensitive adhesive layer may be about 10 to 200 μm, and the thickness of the release film may be about 10 to 100 μm, for example.

  As the pressure-sensitive adhesive component used in the pressure-sensitive adhesive layer, known ones are used. For example, the pressure-sensitive adhesive component described in JP-A No. 5-21234 can be used. A known release film is also used.

The pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer is preferably an acrylic pressure-sensitive adhesive. Specifically, the pressure-sensitive adhesive layer was selected from a homopolymer and a copolymer having (meth) acrylic acid ester as a main constituent monomer unit. Acrylic polymers, copolymers with other functional monomers, and mixtures of these polymers are used. For example, (meth) acrylic acid ester includes ethyl methacrylate, butyl methacrylate, 2-ethylhexyl methacrylate, glycidyl methacrylate, 2-hydroxyethyl methacrylate, ethyl acrylate, butyl acrylate, 2-ethylhexyl acrylate, Glycidyl acrylate, 2-hydroxyethyl acrylate and the like can be preferably used. The molecular weight of the acrylic polymer is 1.0 × 10 ^{5 to} 10.0 × 10 ⁵ , and preferably 4.0 × 10 ^{5 to} 8.0 × 10 ⁵ .

  In addition, by including a radiation polymerizable compound in the pressure-sensitive adhesive layer as described above, the adhesive strength can be reduced by irradiating the pressure-sensitive adhesive layer with radiation after grinding the back surface of the semiconductor wafer. . As such a radiation polymerizable compound, for example, a low molecular weight compound having at least two photopolymerizable carbon-carbon double bonds in a molecule that can be three-dimensionally reticulated by light irradiation is widely used (for example, JP JP-A-60-196956, JP-A-60-223139, etc.).

  Specifically, trimethylolpropane triacrylate, tetramethylolmethane tetraacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate or 1,4-butylene glycol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, commercially available oligoester acrylate, and the like are used.

  Furthermore, in addition to the acrylate compounds as described above, urethane acrylate oligomers can also be used as the radiation polymerizable compound. The urethane acrylate oligomer is obtained by reacting an acrylate or methacrylate having a hydroxyl group with a terminal isocyanate urethane prepolymer obtained by reacting a polyol compound such as a polyester type or a polyether type with a polyvalent isocyanate compound. This urethane acrylate oligomer is a radiation polymerizable compound having at least one carbon-carbon double bond.

Further, in the pressure-sensitive adhesive layer, in addition to the above-mentioned pressure-sensitive adhesive and radiation-polymerizable compound, if necessary, a compound that is colored by radiation irradiation (such as a leuco dye), a light-scattering inorganic compound powder, abrasive grains (A particle size of about 0.5 to 100 μm), an isocyanate curing agent, a UV initiator, and the like can also be contained.
II. Manufacturing method of back grind film

  The multi-layer backgrind substrate film of the present invention can be formed by a conventionally used method such as an extrusion method using a T die or an annular die or a calendar method. Considering from the viewpoint of the thickness accuracy of the base film, an extrusion method using a T die is preferable. Therefore, an extrusion method using a T die will be described below.

  Using a plurality of extruders, each raw resin is charged into each extruder, and a roll-shaped multilayer substrate film is obtained in the same manner as described above. Specifically, when a backgrind substrate film having a three-layer structure consisting of A layer / B layer / C layer is formed, the raw material resin for each layer is used. Resin for layer A containing 0 to 60% by weight of hydrogenated vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer and 40 to 100% by weight of polypropylene resin, vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer B layer resin containing 50-100% by weight of combined hydrogenated product and 0-50% by weight of polypropylene resin, and 0-60% by weight of hydrogenated vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer, and It is manufactured by coextrusion molding a resin for C layer containing 40 to 100% by weight of polypropylene resin in the order of A layer / B layer / C layer.

  The above resin for each layer can be prepared by dry blending or melt-kneading. The resin for each layer is supplied to the screw type extruder in this order, extruded from a multilayer T die at 180 to 225 ° C., and cooled while passing through a cooling roll at 50 to 70 ° C. Take it unstretched. Alternatively, the resin for each layer may be once obtained as pellets and then extruded as described above.

  The reason why the film is substantially unstretched at the time of taking is to suppress shrinkage of the film due to stretching in the back grinding process. This substantially non-stretching includes non-stretching or slight stretching that does not affect the warpage of the wafer during back grinding. Usually, the film may be pulled to such an extent that no sagging occurs when the film is taken up.

  A well-known method can be employ | adopted for the method of providing an adhesive layer and a mold release film on the surface of A layer of the base film for back grinding obtained above. The back grind film is usually obtained in a rolled state cut into a tape shape.

III. Semiconductor wafer back grinding method The back grinding method of the present invention attaches a back grinding film to the front surface (circuit surface) of the semiconductor wafer, grinds the back surface of the semiconductor wafer, and removes the back grinding film from the semiconductor wafer.

  Specifically, the release film is peeled off from the pressure-sensitive adhesive layer of the back grind film, the surface of the pressure-sensitive adhesive layer is exposed, and the semiconductor wafer on the side where the integrated circuit is incorporated through the pressure-sensitive adhesive layer Stick to the surface. The thickness of the semiconductor wafer before grinding is usually about 300 μm to 1000 μm. Next, the semiconductor wafer is fixed and the back surface thereof is ground by a conventional method. The thickness of the semiconductor wafer after grinding is selected according to the size of the chip to be obtained, the type of circuit, the application, etc., and is, for example, about 50 μm to 200 μm. After the back surface grinding is completed, a chemical etching process or a CMP (mechanochemical polishing) process may be added as necessary. Thereafter, the back grind film is peeled (removed). If necessary, after the back grind film is peeled off, the surface of the semiconductor wafer is subjected to a cleaning process such as water cleaning or plasma cleaning.

Hereinafter, the present invention will be described in more detail using Examples and Comparative Examples, but the present invention is not limited to these Examples. “%” Means% by weight.
<Raw material>
In the examples and comparative examples, the following raw materials were used.
-Styrene-butadiene block copolymer hydrogenated product (SEBS): Kraton Polymer Japan Co., Ltd. MD6945
・ Styrene-Isopropylene block copolymer hydrogenated product (SIPS): Kuraray Co., Ltd. Highblur 7311
-Polypropylene resin (PP): Sun Allomer Co., Ltd. PC412A
<Evaluation of warpage>
As an alternative to wafers, polyimide (PI) tape (Scotch Polyimide Tape No.5434, Sumitomo 3M Co., Ltd., thickness 53μm) that is as dimensionally stable as semiconductor wafers at room temperature (25 ° C) to 50 ° C. )It was used.

  The PI tape (width 2 cm x length 14 cm) is pasted on the backgrind substrate film, cut out as a sample, sandwiched between two stainless plates (thickness 2 mm), and placed in an oven set at 50 ° C for 10 minutes. Heated. Thereafter, the sample was taken out and allowed to cool at room temperature (25 ° C.) for 10 minutes, and the warpage caused by the shrinkage of the film was measured.

  The amount of warping is the height of the end of the PI tape that is the most floating from the horizontal plane, with the back grind base film placed on the horizontal plane so that the back grind base film is on the upper side. (Mm) was measured (FIG. 2).

A warp of 3 mm or less was evaluated as “◯”, and a warp exceeding 3 mm was determined as “X”.
<Evaluation of blocking>
Two samples for measurement from an arbitrary position of the obtained base film to a size of 100 mm x 30 mm wide (sample cut with the film flow direction set to the vertical direction and the width direction set to the horizontal direction) Cut out. Two measurement samples are placed so that the same surface (surface in contact with the cooling roll) overlaps each other in an area of 40 mm x 30 mm, and the overlapped measurement samples are sandwiched between two glass plates. From the top, a 600 g weight was placed on the part where the samples overlapped. This was placed in a constant temperature bath at 40 ° C. and left for 7 days. Seven days later, the sample taken out of the thermostatic chamber was set in a peel tester (Peeling TESTER HEIDON-17) manufactured by Shinto Kagaku Co., Ltd., and the 180 ° shear peel strength was measured at a pulling speed of 200 mm / min. / 10 mm or less, no blocking.

Example 1 (A / B / C three-layer film)
PP was used as the resin for the A layer and the resin for the C layer. 60% by weight of SEBS and 40% by weight of PP were dry blended to obtain a resin for B layer.

  A layer resin, B layer resin, and C layer resin were supplied in this order to a multilayer extruder having a barrel temperature of 180 to 220 ° C. It was extruded from a 230 ° C. T-die, cooled and solidified with a take-up roll having a set temperature of 40 ° C., and wound up in an unstretched state.

  The thickness of the obtained three-layer film was A layer 20 μm, B layer 110 μm, C layer 20 μm, and the total thickness 150 μm.

Example 2-16, Comparative Examples 1-4 (A / B / C three-layer film)
Except making it into the resin composition and compounding ratio of Table 1, 2, it processed similarly to Example 1 and obtained the 3 layer film of Example 2-16 and Comparative Examples 1-4.

It is the figure which showed typically that a semiconductor wafer warps and a chip | tip generate | occur | produces following the curvature of the base film for bag grinding. It is the figure which showed typically the measuring method of the curvature of the base film for bag grinds.

Claims (5)

A layer containing 0 to 60% by weight of a hydrogenated vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer and 40 to 100% by weight of a polypropylene-based resin, a vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer B layer containing 50 to 100% by weight of hydrogenated product and 0 to 50% by weight of polypropylene resin, and 0 to 60% by weight of hydrogenated vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer and polypropylene resin 40 A substrate film for back grinding having a C layer containing ˜100% by weight and laminated in the order of A layer / B layer / C layer. The base film for back grinding according to claim 1, wherein the thickness is 50 to 300 µm. The back grind film which has an adhesive layer and a release film on the surface of the base film for back grinds of Claim 1 or 2. 4. A back of a semiconductor wafer, wherein the back grind film according to claim 3 is attached to the front surface (circuit surface) of the semiconductor wafer, the back surface of the semiconductor wafer is ground, and the back grind film is removed from the semiconductor wafer. Grind way. A method for producing a backgrind substrate film, comprising a vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer hydrogenated product of 0 to 60% by weight and a polypropylene-based resin of 40 to 100% by weight; B layer resin containing 50-100% by weight of hydrogenated vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer and 0-50% by weight of polypropylene resin, and vinyl aromatic hydrocarbon-conjugated diene hydrocarbon copolymer A production method comprising coextruding a resin for a C layer containing 0 to 60% by weight of a hydrogenated polymer and 40 to 100% by weight of a polypropylene resin in the order of A layer / B layer / C layer .

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