JP2009225093A - 圧電デバイスおよび電子機器 - Google Patents
圧電デバイスおよび電子機器 Download PDFInfo
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- JP2009225093A JP2009225093A JP2008067193A JP2008067193A JP2009225093A JP 2009225093 A JP2009225093 A JP 2009225093A JP 2008067193 A JP2008067193 A JP 2008067193A JP 2008067193 A JP2008067193 A JP 2008067193A JP 2009225093 A JP2009225093 A JP 2009225093A
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- 230000002093 peripheral effect Effects 0.000 claims abstract description 11
- 230000008707 rearrangement Effects 0.000 claims description 59
- 230000010355 oscillation Effects 0.000 claims description 13
- 238000003475 lamination Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 15
- 239000003990 capacitor Substances 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000005284 excitation Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/875—Further connection or lead arrangements, e.g. flexible wiring boards, terminal pins
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0538—Constructional combinations of supports or holders with electromechanical or other electronic elements
- H03H9/0547—Constructional combinations of supports or holders with electromechanical or other electronic elements consisting of a vertical arrangement
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
- H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Oscillators With Electromechanical Resonators (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
【解決手段】圧電デバイス10は、ICチップ12と圧電振動片30とを積層方向に配置したものであって、ICチップ12の一方の面に内部パッド16および絶縁層を設け、前記絶縁層と前記一方の面との間に再配置配線18を設けて、再配置配線18の一端を内部パッド16に接続し、他端を前記一方の面の周縁部に配置し、前記他端には前記絶縁層を貫通する導通手段を設け、前記導通手段が前記絶縁層の外側表面に露出した部分に、ワイヤ28が接合する再配置内部パッド16を設け、ワイヤ28を配設した側とは反対の平面方向へ再配置内部パッド16からずれるとともに、内部パッド16に対向して圧電振動片30を配設した構成である。
【選択図】図1
Description
形態または適用例として実現することが可能である。
なお再配置配線の他端は、一方の面の周縁部に配置できる。これにより再配置パッドは、ICチップを平面視したときの周縁部に配置できるので、圧電振動片を平面方向にずらす量を少なくできる。よって圧電デバイスの平面サイズを小さくできる。
の再配置配線18の一端は、平面視して圧電振動片30と重なる内部パッド16に接続しており、他端は平面視して圧電振動片30と重ならない位置に設けた内部パッド16に接続している。したがって図4(A)に例示する場合では、能動面14aの周縁部を構成する2つの辺(半導体素子14の上辺と下辺)に沿って内部パッド16が設けてあるが、平面視して圧電振動片30と重なる3つの内部パッド16(半導体素子14の下辺に沿ったもの)は、再配置配線18によって能動面14aの周縁部を構成する右辺に沿った位置に引き出されて、圧電振動片30と重ならないようになっている。
そしてパッケージベース34の上面に蓋体48が接合して、凹陥部36を気密封止している。
路を備えた圧電デバイス10は電圧制御型圧電発振器になる。また温度補償回路は、圧電振動片30の周囲温度が変化しても、発振回路から出力される信号の周波数変化を少なくするようにしている。この温度補償回路を備えた圧電デバイス10は温度補償型圧電発振器になる。
ケージ、34………パッケージベース、40………パッド電極、42………搭載電極、50………再配置搭載電極、60………周波数調整素子。
Claims (5)
- 平面視して圧電振動片の少なくとも一部がICチップの一部と重なるように配置された圧電デバイスであって、
前記ICチップは、
能動面の平面視して前記圧電振動片と重なる領域に形成された内部パッドと、
前記能動面上に形成された絶縁層と、
前記絶縁層上の平面視して前記圧電振動片と重ならない領域に形成され、ワイヤの一端が接続される再配置パッドと、
前記内部パッドと前記再配置パッドとを電気的に接続する配線であって、前記絶縁層と前記能動面との間に形成された再配置配線、および前記絶縁層の貫通導通手段を有する配線と、
を備えたことを特徴とする圧電デバイス。 - 前記再配置パッドは、前記ICチップの周縁部のうちいずれか1つの辺に隣接して設けたことを特徴とする請求項1に記載の圧電デバイス。
- 前記絶縁層上に搭載電極を設け、前記搭載電極上に前記圧電振動片を実装したことを特徴とする請求項1または2に記載の圧電デバイス。
- 前記再配置配線に発振周波数を調整する周波数調整素子が接続されていることを特徴とする請求項1ないし3のいずれかに記載の圧電デバイス。
- 請求項1ないし4のいずれかに記載の圧電デバイスを搭載したことを特徴とする電子機器。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008067193A JP5115258B2 (ja) | 2008-03-17 | 2008-03-17 | 圧電デバイスおよび電子機器 |
US12/404,816 US8760231B2 (en) | 2008-03-17 | 2009-03-16 | Piezoelectric device and electronic apparatus |
US13/751,750 US9543497B2 (en) | 2008-03-17 | 2013-01-28 | Piezoelectric device and electronic apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008067193A JP5115258B2 (ja) | 2008-03-17 | 2008-03-17 | 圧電デバイスおよび電子機器 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009225093A true JP2009225093A (ja) | 2009-10-01 |
JP2009225093A5 JP2009225093A5 (ja) | 2011-03-17 |
JP5115258B2 JP5115258B2 (ja) | 2013-01-09 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008067193A Expired - Fee Related JP5115258B2 (ja) | 2008-03-17 | 2008-03-17 | 圧電デバイスおよび電子機器 |
Country Status (2)
Country | Link |
---|---|
US (2) | US8760231B2 (ja) |
JP (1) | JP5115258B2 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012129679A (ja) * | 2010-12-14 | 2012-07-05 | Seiko Epson Corp | 圧電発振器 |
US9444466B2 (en) | 2014-03-27 | 2016-09-13 | Seiko Epson Corporation | Method of adjusting frequency of resonation device and method of manufacturing resonation device |
US9484928B2 (en) | 2013-12-24 | 2016-11-01 | Seiko Epson Corporation | Oscillator, electronic apparatus, and moving object |
JP2017046159A (ja) * | 2015-08-26 | 2017-03-02 | 日本電波工業株式会社 | 表面実装型水晶発振デバイス |
US9590584B2 (en) | 2013-03-27 | 2017-03-07 | Seiko Epson Corporation | Resonation device, electronic device, and moving object |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5556342B2 (ja) * | 2010-05-07 | 2014-07-23 | セイコーエプソン株式会社 | 圧電発振器、gps受信装置及び電子機器 |
US8717108B2 (en) * | 2011-04-12 | 2014-05-06 | The Boeing Company | Resonator device |
DE102012202727B4 (de) * | 2012-02-22 | 2015-07-02 | Vectron International Gmbh | Verfahren zur Verbindung eines ersten elektronischen Bauelements mit einem zweiten Bauelement |
JP2013243340A (ja) * | 2012-04-27 | 2013-12-05 | Canon Inc | 電子部品、実装部材、電子機器およびこれらの製造方法 |
JP6296687B2 (ja) | 2012-04-27 | 2018-03-20 | キヤノン株式会社 | 電子部品、電子モジュールおよびこれらの製造方法。 |
JP5885690B2 (ja) | 2012-04-27 | 2016-03-15 | キヤノン株式会社 | 電子部品および電子機器 |
DE102014109264B4 (de) * | 2014-07-02 | 2017-11-16 | Snaptrack, Inc. | Resonatorschaltung mit erweiterten Freiheitsgraden, Filter mit verbesserter Abstimmbarkeit und Duplexer mit verbesserter Abstimmbarkeit |
JP6481276B2 (ja) * | 2014-07-18 | 2019-03-13 | セイコーエプソン株式会社 | 無線通信装置、電子機器及び移動体 |
US20160307873A1 (en) * | 2015-04-16 | 2016-10-20 | Mediatek Inc. | Bonding pad arrangment design for semiconductor package |
JP6651786B2 (ja) * | 2015-10-26 | 2020-02-19 | セイコーエプソン株式会社 | 発振モジュール、電子機器及び移動体 |
JP2019102848A (ja) * | 2017-11-28 | 2019-06-24 | セイコーエプソン株式会社 | 振動デバイス、振動デバイスの製造方法、電子機器および移動体 |
JP7027841B2 (ja) * | 2017-11-29 | 2022-03-02 | セイコーエプソン株式会社 | 振動デバイス、電子機器および移動体 |
JP2019102857A (ja) * | 2017-11-29 | 2019-06-24 | セイコーエプソン株式会社 | 振動デバイス、電子機器および移動体 |
JP7013855B2 (ja) | 2017-12-26 | 2022-02-01 | セイコーエプソン株式会社 | 振動デバイス、電子機器および移動体 |
JP2022181330A (ja) * | 2021-05-26 | 2022-12-08 | セイコーエプソン株式会社 | 電子部品用パッケージ、電子部品、及び発振器 |
Citations (4)
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JP2001217476A (ja) * | 1999-11-25 | 2001-08-10 | Seiko Epson Corp | 圧電デバイス |
JP2003037441A (ja) * | 2001-07-26 | 2003-02-07 | Seiko Epson Corp | 圧電デバイス及び電子機器 |
JP2004015441A (ja) * | 2002-06-06 | 2004-01-15 | Nippon Dempa Kogyo Co Ltd | 表面実装用の水晶発振器 |
JP2006020140A (ja) * | 2004-07-02 | 2006-01-19 | Seiko Epson Corp | 圧電発振器 |
Family Cites Families (9)
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US6204074B1 (en) * | 1995-01-09 | 2001-03-20 | International Business Machines Corporation | Chip design process for wire bond and flip-chip package |
US7319277B2 (en) * | 2003-05-08 | 2008-01-15 | Megica Corporation | Chip structure with redistribution traces |
JP3880572B2 (ja) * | 2003-10-31 | 2007-02-14 | 沖電気工業株式会社 | 半導体チップ及び半導体装置 |
US7394161B2 (en) * | 2003-12-08 | 2008-07-01 | Megica Corporation | Chip structure with pads having bumps or wirebonded wires formed thereover or used to be tested thereto |
JP2006013681A (ja) * | 2004-06-23 | 2006-01-12 | Seiko Epson Corp | 圧電発振器および圧電発振器用パッケージ |
US7339309B2 (en) * | 2004-09-14 | 2008-03-04 | Nihon Dempa Kogyo Co., Ltd. | Surface mount crystal oscillator |
US7397121B2 (en) * | 2005-10-28 | 2008-07-08 | Megica Corporation | Semiconductor chip with post-passivation scheme formed over passivation layer |
US8420520B2 (en) * | 2006-05-18 | 2013-04-16 | Megica Corporation | Non-cyanide gold electroplating for fine-line gold traces and gold pads |
US8035454B2 (en) * | 2009-03-09 | 2011-10-11 | Micro Crystal Ag | Oscillator device comprising a thermally-controlled piezoelectric resonator |
-
2008
- 2008-03-17 JP JP2008067193A patent/JP5115258B2/ja not_active Expired - Fee Related
-
2009
- 2009-03-16 US US12/404,816 patent/US8760231B2/en active Active
-
2013
- 2013-01-28 US US13/751,750 patent/US9543497B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001217476A (ja) * | 1999-11-25 | 2001-08-10 | Seiko Epson Corp | 圧電デバイス |
JP2003037441A (ja) * | 2001-07-26 | 2003-02-07 | Seiko Epson Corp | 圧電デバイス及び電子機器 |
JP2004015441A (ja) * | 2002-06-06 | 2004-01-15 | Nippon Dempa Kogyo Co Ltd | 表面実装用の水晶発振器 |
JP2006020140A (ja) * | 2004-07-02 | 2006-01-19 | Seiko Epson Corp | 圧電発振器 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012129679A (ja) * | 2010-12-14 | 2012-07-05 | Seiko Epson Corp | 圧電発振器 |
US9590584B2 (en) | 2013-03-27 | 2017-03-07 | Seiko Epson Corporation | Resonation device, electronic device, and moving object |
US9484928B2 (en) | 2013-12-24 | 2016-11-01 | Seiko Epson Corporation | Oscillator, electronic apparatus, and moving object |
US9893733B2 (en) | 2013-12-24 | 2018-02-13 | Seiko Epson Corporation | Oscillator, electronic apparatus, and moving object |
US9444466B2 (en) | 2014-03-27 | 2016-09-13 | Seiko Epson Corporation | Method of adjusting frequency of resonation device and method of manufacturing resonation device |
JP2017046159A (ja) * | 2015-08-26 | 2017-03-02 | 日本電波工業株式会社 | 表面実装型水晶発振デバイス |
Also Published As
Publication number | Publication date |
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JP5115258B2 (ja) | 2013-01-09 |
US20090230486A1 (en) | 2009-09-17 |
US20130221801A1 (en) | 2013-08-29 |
US8760231B2 (en) | 2014-06-24 |
US9543497B2 (en) | 2017-01-10 |
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