JP2009212407A - Method and apparatus for processing substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To replace processing liquid efficiently using a small amount of solvent of low surface tension in substrate processing method and apparatus for replacing the surface treatment liquid of a substrate with a solvent of low surface tension such as IPA. <P>SOLUTION: After finishing rinse treatment, rotational speed of a substrate W is decelerated from 600 rpm to 10 rpm and a DIW liquid film is formed in the shape of a paddle. Upon elapsing a predetermined time after stopping supply of DIW, rotational speed of the substrate W is accelerated to 40 rpm after waiting for the liquid film in the shape of a paddle to have a substantially uniform thickness T1. Consequently, the thickness of the DIW liquid film on the substrate decreases to T2. While the amount of DIW on the substrate is reduced, supply of IPA for replacing the DIW is started thus reducing the amount of IPA required for replacement. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention provides a substrate in which a processing liquid is supplied to a substrate surface and a predetermined wet process is performed on the substrate surface, and then a low surface tension solvent is supplied to the substrate surface wetted with the processing liquid to replace the processing liquid. The present invention relates to a processing method and a substrate processing apparatus. The substrates to be processed include semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, FED (Field Emission Display) substrates, optical disk substrates, and magnetic disks. And a magneto-optical disk substrate.

  IPA (isopropyl alcohol: isopropyl alcohol: isopropyl alcohol, which has a lower surface tension than pure water) is one of the methods for removing the rinsing liquid adhering to the substrate surface after chemical liquid treatment with chemical liquid and rinse treatment with pure water or the like is performed. A treatment method using a liquid (low surface tension solvent) containing an organic solvent component such as alcohol) is known. For example, in Patent Document 1, after the pure water rinse process, the rotation speed of the substrate is reduced to the paddle process rotation speed and then the supply of pure water is stopped, and then an organic solvent such as IPA is supplied to the substrate to supply pure water. Is described, and further, the rotation speed of the substrate is increased to shake off the organic solvent and dry the substrate.

JP 2006-140285 A (FIGS. 4 and 5)

  In the technique described in Patent Document 1 described above, since the organic solvent is supplied in a state where the substrate is maintained at the paddle processing rotation speed, a large amount of rinsing liquid (pure water) is formed on the substrate surface at the start of supplying the organic solvent. ) Remains. That is, the remaining amount of the rinse liquid on the substrate to be replaced with the organic solvent is large. For this reason, there is room for improvement in the above technique in that the processing time required to completely replace the rinsing liquid on the substrate and the amount of the organic solvent required increase.

  The present invention has been made in view of the above problems. In a substrate processing method and a substrate processing apparatus for replacing a processing liquid on a substrate surface with a low surface tension solvent such as IPA, the processing liquid is used with a small amount of low surface tension solvent used. It aims at providing the technique which can be replaced efficiently.

  In order to achieve the above object, the substrate processing method according to the present invention includes a wet processing step of performing a wet processing on the substrate surface using a processing liquid while rotating a substantially horizontal substrate at a first speed, A paddle forming step of reducing the rotational speed of the substrate to a second speed to form a liquid film of the processing liquid on the substrate in a paddle shape; and the rotational speed of the substrate is made higher than the second speed to form the substrate A paddle film thickness reducing step for reducing the thickness of the upper liquid film, and a low surface tension solvent having a surface tension lower than that of the processing liquid is supplied to the liquid film central portion of the substrate surface, and the low surface tension solvent causes the A replacement step of replacing the treatment liquid on the substrate and a drying step of removing the low surface tension solvent from the substrate surface and drying the substrate surface after the replacement step are provided.

  In order to achieve the above object, a substrate processing apparatus according to the present invention includes a substrate holding unit that holds a substrate in a substantially horizontal posture, and a substrate that rotates the substrate held by the substrate holding unit about a predetermined rotation axis. Rotating means, processing liquid supply means for supplying a processing liquid for performing wet processing on the substrate to the surface of the substrate held by the substrate holding means, and a central portion of the surface of the substrate after the wet processing Supplying a low surface tension solvent having a surface tension lower than that of the processing liquid, and replacing the processing liquid on the substrate with the low surface tension solvent; and controlling the substrate rotating means to control the substrate. Control means for adjusting the rotation speed of the substrate, and the control means sets the rotation speed of the substrate in the wet processing to the first speed, while the supply of the processing liquid from the processing liquid supply means is stopped. Than In addition, the rotational speed of the substrate is reduced to a second speed to form a liquid film of the treatment liquid on the substrate in a paddle shape, and then before the supply of the low surface tension solvent is started, The rotation speed of the substrate is changed to a speed higher than the second speed.

  In the invention configured as described above, after the substrate rotation speed is lowered to the second speed to form a liquid film of the processing liquid in a paddle shape, the surface tension is lowered with the substrate rotation speed higher than the second speed. Supply of solvent has started. By reducing the rotational speed of the substrate once to the second speed after the wet processing, a paddle-like liquid film is formed on the substrate by the processing liquid, thereby preventing the substrate surface from being exposed. Since the rotation speed of the substrate is increased after forming the liquid film in this way, the thickness of the liquid film on the substrate is higher than when the rotation speed of the substrate is maintained at the second speed at the start of supplying the low surface tension solvent. Is thinner. That is, the amount of processing liquid that forms a liquid film on the substrate is reduced. As a result, according to the present invention, the amount of the low surface tension solvent necessary for replacing the treatment liquid on the substrate can be reduced. Also, the time required for replacement can be shortened.

  Then, after the liquid remaining on the substrate is replaced with the low surface tension solvent, the low surface tension solvent is removed from the substrate surface by, for example, a method of further increasing the rotation speed of the substrate. The substrate can be dried without causing defects such as marks and spots. Moreover, about the board | substrate with which pattern formation was carried out on the surface, pattern collapse resulting from the strength of the surface tension of the adhering liquid can be prevented.

  In the substrate processing method described above, in the replacement step, it is preferable that the supply of the low surface tension solvent is started before the surface of the substrate covered with the liquid film in the paddle formation step is exposed. By increasing the rotation speed, the thickness of the liquid film on the substrate decreases, and eventually the continuity of the liquid film is interrupted and the substrate surface is exposed. By starting the supply of the low surface tension solvent before such a state is reached, it is possible to prevent the occurrence of watermarks and spots due to uneven drying of the substrate surface.

  In the paddle film thickness reduction step, the rotation speed of the substrate is changed to a third speed that is lower than the first speed and higher than the second speed, and in the replacement step, the rotation speed is the third speed. You may make it start supplying the said low surface tension solvent with respect to a board | substrate. That is, the supply of the low surface tension solvent may be started after the rotation speed of the substrate is changed to a third speed higher than the second speed at the time of liquid film formation. On the other hand, the supply of the low surface tension solvent may be started during the acceleration of the substrate. In any case, the thickness of the liquid film on the substrate at the start of the supply of the low surface tension solvent can be reduced to reduce the remaining amount of the processing liquid. As a result, the amount of the low surface tension solvent required for the replacement And time can be reduced.

  In addition, a hydrophobization treatment step for hydrophobizing the substrate surface is provided before the wet treatment step, and in the wet treatment step, the substrate surface is rinsed with a rinse liquid as the treatment liquid mainly containing water. A rinse process may be performed. The treatment of forming a paddle-like rinsing liquid film on a substrate, substituting it with a low surface tension solvent and drying it is particularly effective when a substrate having a hydrophobic surface is to be treated. By applying the present invention when performing such treatment, the substrate can be dried without generating defects with a small amount of use of a low surface tension solvent and in a short treatment time.

  In addition, as a “low surface tension solvent” used in the present invention, a 100% organic solvent component or a mixed solution thereof with pure water can be used. Moreover, it may replace with the solvent containing an organic solvent component as a low surface tension solvent, and may use the solvent which essentially contains surfactant. Here, an alcohol-based organic solvent can be used as the “organic solvent component”. As the alcohol-based organic solvent, isopropyl alcohol, ethyl alcohol, or methyl alcohol can be used from the viewpoints of safety, cost, and the like, and isopropyl alcohol (IPA) is particularly preferable.

  According to the present invention, after the liquid film of the processing liquid on the paddle is formed on the substrate with the rotation speed of the substrate as the second speed, the rotation speed of the substrate is increased to reduce the thickness of the liquid film, and then the low surface Start supplying tension solvent. For this reason, the remaining amount of the processing liquid to be replaced on the substrate is reduced at the start of supplying the low surface tension solvent. As a result, according to the present invention, the processing liquid on the substrate can be replaced with the low surface tension solvent with a small amount of use of the low surface tension solvent and in a short processing time. In addition, since the thickness of the paddle-like liquid film formed by the processing liquid is once reliably formed at a low rotation speed, the thickness thereof is reduced, so that the substrate surface can be prevented from being exposed.

  FIG. 1 is a view showing an embodiment of a substrate processing apparatus according to the present invention. FIG. 2 is a block diagram showing a main control configuration of the substrate processing apparatus of FIG. This substrate processing apparatus is a single-wafer type substrate processing apparatus used for a cleaning process for removing unnecessary substances adhering to a surface Wf of a substrate W such as a semiconductor wafer. More specifically, the substrate surface Wf was wetted with a rinsing solution after being subjected to a chemical treatment with a chemical solution such as hydrofluoric acid and a rinsing treatment with pure water or DIW (deionized water). An apparatus for drying the substrate surface Wf. In this embodiment, the substrate surface Wf means a pattern formation surface on which a device pattern made of poly-Si or the like is formed.

  The substrate processing apparatus includes a spin chuck 1 that rotates while holding the substrate W in a substantially horizontal posture with the substrate surface Wf facing upward, and a chemical solution toward the surface Wf of the substrate W held by the spin chuck 1. A chemical solution discharge nozzle 3 for discharging, and a blocking member 9 arranged at a position above the spin chuck 1 are provided.

  The spin chuck 1 has a rotation support shaft 11 connected to a rotation shaft of a chuck rotation mechanism 13 including a motor, and can rotate about a rotation axis J (vertical axis) by driving the chuck rotation mechanism 13. The rotating support shaft 11 and the chuck rotating mechanism 13 are accommodated in a cylindrical casing 2. A disc-shaped spin base 15 is integrally connected to the upper end portion of the rotation spindle 11 by a fastening component such as a screw. Therefore, the spin base 15 rotates around the rotation axis J by driving the chuck rotation mechanism 13 in accordance with an operation command from the control unit 4 that controls the entire apparatus. Thus, in this embodiment, the chuck rotating mechanism 13 functions as the “substrate rotating means” of the present invention. Further, the control unit 4 controls the chuck rotation mechanism 13 to adjust the rotation speed.

  Near the peripheral edge of the spin base 15, a plurality of chuck pins 17 for holding the peripheral edge of the substrate W are provided upright. Three or more chuck pins 17 may be provided to securely hold the circular substrate W, and are arranged at equiangular intervals along the peripheral edge of the spin base 15. Each of the chuck pins 17 includes a substrate support portion that supports the peripheral portion of the substrate W from below, and a substrate holding portion that holds the substrate W by pressing the outer peripheral end surface of the substrate W supported by the substrate support portion. Yes. Each chuck pin 17 is configured to be switchable between a pressing state in which the substrate holding portion presses the outer peripheral end surface of the substrate W and a released state in which the substrate holding portion is separated from the outer peripheral end surface of the substrate W.

  When the substrate W is delivered to the spin base 15, the plurality of chuck pins 17 are released, and when the substrate W is cleaned, the plurality of chuck pins 17 are pressed. To do. By setting the pressed state, the plurality of chuck pins 17 can grip the peripheral edge of the substrate W and hold the substrate W in a substantially horizontal posture at a predetermined interval from the spin base 15. As a result, the substrate W is supported with its front surface (pattern forming surface) Wf facing upward and the back surface Wb facing downward. Thus, in this embodiment, the chuck pin 17 functions as the “substrate holding means” of the present invention. The substrate holding means is not limited to the chuck pins 17, and a vacuum chuck that supports the substrate W by sucking the substrate back surface Wb may be used.

  The chemical liquid discharge nozzle 3 is connected to a chemical liquid supply source via a chemical valve 31. For this reason, when the chemical liquid valve 31 is opened and closed based on the control command from the control unit 4, the chemical liquid is pumped from the chemical liquid supply source toward the chemical liquid discharge nozzle 3, and the chemical liquid is discharged from the chemical liquid discharge nozzle 3. Note that hydrofluoric acid or BHF (buffered hydrofluoric acid) or the like is used as the chemical solution. Further, a nozzle moving mechanism 33 (FIG. 2) is connected to the chemical liquid discharge nozzle 3, and the chemical liquid discharge nozzle 3 is moved to the substrate W by driving the nozzle moving mechanism 33 in accordance with an operation command from the control unit 4. Can be reciprocated between the discharge position above the rotation center and the standby position retracted to the side from the discharge position.

  The blocking member 9 includes a plate-like member 90, a rotation support shaft 91 that is hollow inside, and supports the plate-like member 90, and an insertion shaft 95 that is inserted through the hollow portion of the rotation support shaft 91. ing. The plate-like member 90 is a disk-like member having an opening at the center, and is disposed to face the surface Wf of the substrate W held by the spin chuck 1. The plate-like member 90 has a lower surface (bottom surface) 90 a that is a substrate facing surface that faces the substrate surface Wf substantially in parallel, and the planar size of the plate member 90 is equal to or larger than the diameter of the substrate W. The plate-like member 90 is attached substantially horizontally to the lower end portion of the rotation support shaft 91 having a substantially cylindrical shape, and the rotation support shaft 91 is rotatable about a rotation axis J passing through the center of the substrate W by an arm 92 extending in the horizontal direction. Is retained. A bearing (not shown) is interposed between the outer peripheral surface of the insertion shaft 95 and the inner peripheral surface of the rotation support shaft 91. A blocking member rotating mechanism 93 and a blocking member lifting mechanism 94 are connected to the arm 92.

  The blocking member rotation mechanism 93 rotates the rotation support shaft 91 around the rotation axis J in response to an operation command from the control unit 4. When the rotation support shaft 91 is rotated, the plate member 90 rotates integrally with the rotation support shaft 91. The blocking member rotating mechanism 93 is configured to rotate the plate-like member 90 (lower surface 90a) in the same rotational direction as the substrate W and at substantially the same rotational speed in accordance with the rotation of the substrate W held by the spin chuck 1. Yes.

  Further, the blocking member elevating mechanism 94 can make the blocking member 9 close to and opposite to the spin base 15 according to an operation command from the control unit 4, or can be separated from the spin base 15. Specifically, the control unit 4 operates the blocking member elevating mechanism 94 to raise the blocking member 9 to a separation position above the spin chuck 1 when the substrate processing apparatus carries the substrate W in and out. Let On the other hand, when a predetermined process is performed on the substrate W, the substrate W is cut off to a predetermined facing position (position shown in FIG. 1) set very close to the surface Wf of the substrate W held by the spin chuck 1. The member 9 is lowered. In this embodiment, after the rinsing process is started, the blocking member 9 is lowered from the separated position to the facing position, and is continuously positioned until the drying process is completed.

  FIG. 3 is a longitudinal sectional view showing the main part of the blocking member provided in the substrate processing apparatus of FIG. 4 is a cross-sectional view (cross-sectional view) taken along the line A-A ′ of FIG. An insertion shaft 95 inserted in the hollow portion of the rotation support shaft 91 has a circular cross section. This is to make the gaps between the insertion shaft 95 (non-rotating side member) and the rotation support shaft 91 (rotating side member) uniform over the entire circumference. The gap between the insertion shaft 95 and the rotation support shaft 91 is sealed from the outside. Three fluid supply paths are formed in the insertion shaft 95 so as to extend in the vertical axis direction. That is, a rinse liquid supply path 96 serving as a rinse liquid path, a solvent supply path 97 serving as a path for a low surface tension solvent having an organic solvent component that dissolves in the rinse liquid and lowers the surface tension, and an inert gas such as nitrogen gas A gas supply path 98 serving as a passage is formed in the insertion shaft 95. The rinsing liquid supply path 96, the solvent supply path 97, and the gas supply path 98 are respectively connected to an interpolating shaft 95 made of PTFE (polytetrafluoroethylene) with PFA (tetrafluoroethylene / perfluoroalkyl vinyl ether copolymer resin). Tetrafluoroethylene and perfluoroalkylvinylether) tubes 96b, 97b, 98b are inserted in the axial direction.

  Then, the lower ends of the rinse liquid supply path 96, the solvent supply path 97, and the gas supply path 98 become the rinse liquid discharge port 96a, the solvent discharge port 97a, and the gas discharge port 98a, respectively, of the substrate W held on the spin chuck 1. Opposite the surface Wf. In this embodiment, the diameter of the insertion shaft is 18 to 20 mm. Moreover, the diameters of the rinse liquid discharge port 96a, the solvent discharge port 97a, and the gas discharge port 98a are formed to 4 mm, 1 to 2 mm, and 4 mm, respectively. Thus, in this embodiment, the diameter of the solvent discharge port 97a is smaller than the diameter of the rinse liquid discharge port 96a. Thereby, the trouble shown below can be prevented. That is, the surface tension of the low surface tension solvent is lower than that of the rinse liquid (DIW). For this reason, when low surface tension solvent is discharged from the solvent discharge port having the same diameter as that for rinsing liquid discharge, the low surface tension solvent is discharged from the solvent discharge port after the discharge of the low surface tension solvent is stopped. There is a risk of falling. On the other hand, when the rinse liquid is discharged from the rinse liquid discharge port having the same diameter as that formed for solvent discharge, the discharge speed of the rinse liquid is increased. As a result, the rinse liquid (DIW), which is an electrical insulator, may collide with the substrate surface Wf at a relatively high speed, so that the supply portion of the substrate surface Wf to which the rinse liquid is directly supplied may be charged and oxidized. is there.

  In contrast, in this embodiment, the discharge port for the low surface tension solvent and the rinse liquid are provided separately, and the diameter of the solvent discharge port 97a is smaller than the diameter of the rinse liquid discharge port 96a. For this reason, it is possible to prevent the low surface tension solvent from dropping from the solvent discharge port, to suppress an increase in the discharge speed of the rinse liquid from the rinse liquid discharge port, and to suppress oxidation due to charging of the substrate surface Wf. it can.

  In this embodiment, the rinse liquid discharge port 96a is provided at a position shifted radially outward from the central axis of the blocking member 9, that is, the rotation axis J of the substrate W. Thereby, it is avoided that the rinse liquid discharged from the rinse liquid discharge port 96a is concentrated and supplied to one point (the rotation center W0 of the substrate W) of the substrate surface Wf. As a result, charged portions on the substrate surface Wf can be dispersed, and oxidation due to charging of the substrate W can be reduced. On the other hand, if the rinse liquid discharge port 96a is too far from the rotation axis J, it is difficult to make the rinse liquid reach the rotation center W0 on the substrate surface Wf. Therefore, in this embodiment, the distance L from the rotation axis J in the horizontal direction to the rinse liquid discharge port 96a (discharge port center) is set to about 4 mm. Here, the upper limit of the distance L at which the rinse liquid (DIW) can be supplied to the rotation center W0 on the substrate surface Wf is 20 mm under the following conditions.

Flow rate of DIW: 2L / min
Substrate rotation speed: 1500rpm
The state of the substrate surface: the center of the surface is a hydrophobic surface Also, as for the upper limit value of the distance from the rotation axis J to the solvent discharge port 97a (discharge port center), as long as the substrate rotation speed is set to 1500 rpm, the rotation axis J described above Is basically the same as the upper limit value (20 mm) of the distance L from the rinsing liquid discharge port 96a (discharge port center).

  On the other hand, with respect to the distance from the rotation axis J to the gas discharge port 98a (discharge port center), a gap space formed between the blocking member 9 (plate member 90) positioned at the opposing position and the substrate surface Wf. As long as nitrogen gas can be supplied to SP, it is not particularly limited and is optional. However, from the viewpoint of blowing nitrogen gas onto a solvent layer made of a low surface tension solvent formed on the substrate surface Wf as described later and discharging the solvent layer from the substrate W, the gas discharge port 98a has a rotational axis J. It is preferable to provide at the top or in the vicinity thereof.

  A space portion formed between the inner wall surface of the rotation support shaft 91 and the outer wall surface of the insertion shaft 95 constitutes the outer gas supply path 99, and the lower end of the outer gas supply path 99 is an annular outer gas. The discharge port 99a is formed. That is, the blocking member 9 includes an outer gas discharge port 99a in addition to a gas discharge port 98a for discharging nitrogen gas toward the center of the substrate surface Wf, and a rinse liquid discharge port 96a, a solvent discharge port 97a, and a gas discharge port. It is provided radially outward with respect to 98a and so as to surround the rinse liquid discharge port 96a, the solvent discharge port 97a, and the gas discharge port 98a. The opening area of the outer gas discharge port 99a is much larger than the opening area of the gas discharge port 98a. Thus, since two types of gas discharge ports are provided in the blocking member 9, nitrogen gas having different flow rates and flow rates can be discharged from the discharge ports. For example, (1) In order to keep the atmosphere around the substrate surface Wf in an inert gas atmosphere, it is desirable to supply nitrogen gas at a relatively large flow rate and low speed so as not to blow off the liquid on the substrate surface Wf. On the other hand, (2) when removing the solvent layer of the low surface tension solvent on the substrate surface Wf from the substrate surface Wf, supply nitrogen gas to the center of the surface of the substrate W at a relatively small flow rate and at a high speed. Is desired. Therefore, in the case (1), nitrogen gas is mainly discharged from the outer gas discharge port 99a, and in the case (2), nitrogen gas is mainly discharged from the gas discharge port 98a. Nitrogen gas can be supplied toward the substrate surface Wf at an appropriate flow rate and flow rate depending on the use of the gas.

  Further, the tip (lower end) of the insertion shaft 95 is not flush with the lower surface 90a of the plate-like member 90, and is retracted upward from the same plane including the lower surface 90a (FIG. 3). According to such a configuration, it is possible to diffuse the nitrogen gas before the nitrogen gas discharged from the gas discharge port 98a reaches the substrate surface Wf and reduce the flow rate of the nitrogen gas to some extent. That is, if the flow rate of nitrogen gas from the gas discharge port 98a is too high, the nitrogen gas from the outer gas discharge port 99a interferes with each other and the solvent layer of the low surface tension solvent on the substrate surface Wf is discharged from the substrate W. It becomes difficult. As a result, droplets remain on the substrate surface Wf. On the other hand, according to the above configuration, the flow rate of nitrogen gas from the gas discharge port 98a is relaxed, and the solvent layer of the low surface tension solvent on the substrate surface Wf can be reliably discharged from the substrate W.

  Returning to FIG. 1, the description will be continued. The upper end portion of the rinsing liquid supply path 96 is connected to the rinsing liquid supply unit 8. The rinsing liquid supply unit 8 includes a rinsing liquid supply pipe 85 having one end connected to a DIW supply source (not shown) constituted by a factory utility or the like, and the other end of the rinsing liquid supply pipe 85 is the rinsing liquid. It is connected to the valve 83. The rinse liquid supply unit 8 having such a configuration can discharge DIW as a rinse liquid from the rinse liquid discharge port 96a when the rinse liquid valve 83 is opened. In this embodiment, DIW which is a rinsing liquid corresponds to the “processing liquid” of the present invention, and the rinsing liquid supply unit 8 functions as the “processing liquid supply means” of the present invention.

  The upper end of the solvent supply path 97 is connected to the solvent supply unit 7 that functions as the “solvent supply means” of the present invention. The solvent supply unit 7 includes a cabinet unit 70 for generating a low surface tension solvent, and the low surface tension solvent generated in the cabinet unit 70 can be pumped to the solvent supply path 97. As the organic solvent component, a substance that dissolves in DIW (surface tension: 72 mN / m) and lowers the surface tension, for example, isopropyl alcohol (surface tension: 21 to 23 mN / m) is used. The organic solvent component is not limited to isopropyl alcohol, and various organic solvent components such as ethyl alcohol and methyl alcohol may be used. The organic solvent component is not limited to a liquid, and various alcohol vapors may be dissolved in DIW as an organic solvent component to produce a low surface tension solvent.

  The cabinet unit 70 includes a storage tank 72 that stores a low surface tension solvent. One end of a DIW introduction pipe 73 for supplying DIW into the storage tank 72 is taken into the storage tank 72, and the other end is connected to a DIW supply source through an open / close valve 73a. Further, a flow meter 73b is interposed in the course of the DIW introduction pipe 73, and the flow meter 73b measures the flow rate of DIW introduced into the storage tank 72 from the DIW supply source. Based on the flow rate measured by the flow meter 73b, the control unit 4 controls the opening / closing valve 73a so that the flow rate of DIW flowing through the DIW introduction pipe 73 becomes a target flow rate (target value).

  Similarly, one end of the IPA introduction pipe 74 for supplying the IPA liquid into the storage tank 72 is taken into the storage tank 72, and the other end is connected to the IPA supply source via the opening / closing valve 74a. Yes. Further, a flow meter 74b is provided in the middle of the route of the IPA introduction pipe 74, and the flow meter 74b measures the flow rate of the IPA liquid introduced into the storage tank 72 from the IPA supply source. Then, the control unit 4 controls opening / closing of the opening / closing valve 74a based on the flow rate measured by the flow meter 74b so that the flow rate of the IPA liquid flowing through the IPA introduction pipe 74 becomes a target flow rate (target value).

  In this embodiment, the volume percentage of IPA in the low surface tension solvent (hereinafter referred to as “IPA concentration”) can be adjusted, that is, 100% IPA can be supplied as the low surface tension solvent, It is also possible to supply a mixed liquid in which DIW is mixed as a low surface tension solvent. When 100% IPA is always used as the low surface tension solvent, IPA may be directly supplied via a solvent valve 76 described below.

  The other end of the solvent supply pipe 75 whose one end is connected to the solvent supply path 97 is inserted into the storage tank 72, and the low surface tension solvent stored in the storage tank 72 is supplied to the solvent supply path via the solvent valve 76. 97 can be supplied. The solvent supply pipe 75 adjusts the temperature of the low surface tension solvent sent to the solvent supply pipe 75 by the metering pump 77 that feeds the low surface tension solvent stored in the storage tank 72 to the solvent supply pipe 75. And a filter 79 for removing foreign matter in the low surface tension solvent. Further, the solvent supply pipe 75 is provided with a concentration meter 80 for monitoring the IPA concentration.

  One end of a solvent circulation pipe 81 is branched and connected to the solvent supply pipe 75 between the solvent valve 76 and the concentration meter 80, and the other end of the solvent circulation pipe 81 is connected to the storage tank 72. A circulation valve 82 is interposed in the solvent circulation pipe 81. During the operation of the apparatus, the metering pump 77 and the temperature controller 78 are always driven, and while the low surface tension solvent is not supplied to the substrate W, the solvent valve 76 is closed and the circulation valve 82 is opened. As a result, the low surface tension solvent fed from the storage tank 72 by the metering pump 77 is returned to the storage tank 72 through the solvent circulation pipe 81. That is, while the low surface tension solvent is not supplied to the substrate W, the low surface tension solvent circulates in the circulation path including the storage tank 72, the solvent supply pipe 75, and the solvent circulation pipe 81. On the other hand, when it is time to supply the low surface tension solvent to the substrate W, the solvent valve 76 is opened and the circulation valve 82 is closed. As a result, the low surface tension solvent delivered from the storage tank 72 is supplied to the solvent supply path 97. As described above, while the low surface tension solvent is not supplied to the substrate W, the low surface tension solvent is circulated so that the DIW and IPA are stirred and the DIW and IPA are sufficiently mixed. be able to. Further, after the solvent valve 76 is opened, the low surface tension solvent that is adjusted to a predetermined temperature and from which foreign matters are removed can be quickly supplied to the solvent supply path 97.

  The upper ends of the gas supply path 98 and the outer gas supply path 99 are connected to the gas supply unit 18 (FIG. 2), respectively, and from the gas supply unit 18 to the gas supply path 98 and the outer side according to the operation command of the control unit 4. Nitrogen gas can be individually pumped to the gas supply path 99. Thus, nitrogen gas can be supplied to the gap space SP formed between the blocking member 9 (plate member 90) positioned at the opposing position and the substrate surface Wf.

  A receiving member 21 is fixedly attached around the casing 2. Cylindrical partition members 23a, 23b, and 23c are erected on the receiving member 21. A space between the outer wall of the casing 2 and the inner wall of the partition member 23a forms the first drainage tank 25a, and a space between the outer wall of the partition member 23a and the inner wall of the partition member 23b serves as the second drainage tank 25b. The space between the outer wall of the partition member 23b and the inner wall of the partition member 23c forms the third drainage tank 25c.

  The bottoms of the first drain tank 25a, the second drain tank 25b, and the third drain tank 25c are formed with outlets 27a, 27b, 27c, respectively, and each outlet is connected to a different drain. ing. For example, in this embodiment, the first drainage tank 25a is a tank for collecting used chemical liquid and communicated with a recovery drain for collecting and reusing the chemical liquid. The second drainage tank 25b is a tank for draining the used rinse liquid, and communicates with a waste drain for disposal processing. Further, the third drainage tank 25c is a tank for draining the used low surface tension solvent, and communicates with a waste drain for disposal processing.

  A splash guard 6 is provided above the drainage tanks 25a to 25c. The splash guard 6 is provided so as to be movable up and down with respect to the rotation axis J of the spin chuck 1 so as to surround the periphery of the substrate W held in a horizontal posture on the spin chuck 1. The splash guard 6 has a shape that is substantially rotationally symmetric with respect to the rotation axis J, and includes three guards 61, 62, and 63 that are concentrically arranged with the spin chuck 1 from the radially inner side toward the outer side. ing. The three guards 61, 62, 63 are provided so that the height decreases in order from the outermost guard 63 toward the innermost guard 61, and the upper ends of the guards 61, 62, 63 are in the vertical direction. It arrange | positions so that it may be settled in the surface extended to.

  The splash guard 6 is connected to the guard lifting mechanism 65 and operates the lifting drive actuator (for example, an air cylinder) of the guard lifting mechanism 65 in accordance with an operation command from the control unit 4, so that the splash guard 6 is spin chucked. 1 can be moved up and down. In this embodiment, the splash guard 6 is moved up and down stepwise by driving the guard lifting mechanism 65, whereby the processing liquid scattered from the rotating substrate W is separated into the first to third drain tanks 25a to 25c and drained. It is possible to make it.

  On the upper part of the guard 61, a groove-shaped first guide portion 61a that is inwardly opened in a cross-sectional shape is formed. Then, by placing the splash guard 6 at the highest position (hereinafter referred to as “first height position”) during the chemical treatment, the chemical liquid scattered from the rotating substrate W is received by the first guide portion 61a, and the first discharge is performed. It is guided to the liquid tank 25a. Specifically, the chemical liquid splashing from the rotating substrate W is arranged by arranging the splash guard 6 so that the first guide portion 61a surrounds the periphery of the substrate W held by the spin chuck 1 as the first height position. Is guided to the first drainage tank 25 a through the guard 61.

  In addition, an inclined portion 62 a that is inclined obliquely upward from the radially outer side to the inner side is formed on the upper portion of the guard 62. Then, the rinsing liquid splashed from the rotating substrate W is received by the inclined portion 62a by positioning the splash guard 6 at a position lower than the first height position (hereinafter referred to as “second height position”) during the rinsing process. And guided to the third drainage tank 25b. Specifically, as the second height position, the splash guard 6 is arranged so that the inclined portion 62a surrounds the periphery of the substrate W held by the spin chuck 1, so that the rinsing liquid scattered from the rotating substrate W can be obtained. It passes between the upper end of the guard 61 and the upper end of the guard 62 and is guided to the second drainage tank 25b.

  Similarly, on the upper part of the guard 63, an inclined portion 63a that is inclined obliquely upward from the radially outer side to the inner side is formed. Then, by placing the splash guard 6 at a position lower than the second height position (hereinafter referred to as “third height position”) during the replacement process, the low surface tension solvent scattered from the rotating substrate W is inclined to the inclined portion 63a. And is guided to the second drainage tank 25c. Specifically, as the third height position, the splash guard 6 is disposed so that the inclined portion 63a surrounds the periphery of the substrate W held by the spin chuck 1, so that the low surface tension scattered from the rotating substrate W is obtained. The solvent passes between the upper end portion of the guard 62 and the upper end portion of the guard 63 and is guided to the third drainage tank 25c.

  Further, the substrate transfer means (not shown) is not moved by causing the spin chuck 1 to protrude from the upper end of the splash guard 6 at a position lower than the third height position (hereinafter referred to as “retraction position”). It is possible to place the processed substrate W on the spin chuck 1 and receive the processed substrate W from the spin chuck 1.

  Next, the operation of the substrate processing apparatus configured as described above will be described in detail with reference to FIGS. FIG. 5 is a flowchart showing the operation of the substrate processing apparatus. FIG. 6 is a timing chart showing the operation of the substrate processing apparatus of FIG. 7 and 8 are schematic views showing the operation of the substrate processing apparatus of FIG.

  In this apparatus, a control unit 4 functioning as a “control unit” of the present invention controls each part of the apparatus according to a program stored in a memory (not shown), and a series of processes shown in FIG. Apply. That is, the control unit 4 positions the splash guard 6 at the retracted position and causes the spin chuck 1 to protrude from the upper end portion of the splash guard 6. In this state, when the unprocessed substrate W is carried into the apparatus by the substrate transport means (not shown), the substrate W is subjected to chemical processing, rinsing processing, paddle formation processing, paddle film thickness reduction processing, A cleaning process including the first and second replacement processes and the drying process is performed. A fine pattern made of, for example, poly-Si is formed on the substrate surface Wf. In this embodiment, the substrate W is carried into the apparatus with the substrate surface Wf facing upward and is held by the spin chuck 1 (step S101). The blocking member 9 is located at a position above the spin chuck 1 and prevents interference with the substrate W.

  After carrying in the substrate, the control unit 4 arranges the splash guard 6 at the first height position (position shown in FIG. 1) and executes the chemical treatment on the substrate W. That is, the chemical solution discharge nozzle 3 is moved to the discharge position, and the substrate W held by the spin chuck 1 is rotated at a predetermined rotation speed (for example, 800 rpm) determined within a range of 200 to 1200 rpm by driving the chuck rotation mechanism 13. (Step S102). Then, the chemical solution valve 31 is opened to supply hydrofluoric acid as a chemical solution from the chemical solution discharge nozzle 3 to the substrate surface Wf (HF supply). The hydrofluoric acid supplied to the substrate surface Wf is spread by centrifugal force, and the entire substrate surface Wf is treated with a chemical solution using hydrofluoric acid (step S103). The hydrofluoric acid shaken off from the substrate W is guided to the first drainage tank 25a and reused as appropriate.

  When the chemical processing is completed, the chemical discharge nozzle 3 is moved to the standby position. And the splash guard 6 is arrange | positioned in a 2nd height position, and the rinse process is performed with respect to the board | substrate W as "wet process" of this invention. That is, the rotation speed of the substrate W is set to the first speed, for example, 600 rpm (step S104), the rinse liquid valve 83 is opened, and the rinse liquid is discharged from the rinse liquid discharge port 96a of the blocking member 9 located at the separated position (step). S105; FIG. 7 (a); DIW supply). Simultaneously with the discharge of the rinsing liquid, the blocking member 9 is lowered toward the facing position and positioned at the facing position. As described above, the substrate surface Wf is kept wet by supplying the rinse liquid to the substrate surface Wf immediately after the chemical treatment. This is due to the following reason.

  That is, when hydrofluoric acid is shaken off from the substrate W after the chemical treatment, the substrate surface Wf begins to dry. As a result, the substrate surface Wf may be partially dried, and spots or the like may occur on the substrate surface Wf. Therefore, in order to prevent such partial drying of the substrate surface Wf, it is important to keep the substrate surface Wf wet. Further, nitrogen gas is discharged from the gas discharge port 98a and the outer gas discharge port 99a of the blocking member 9. Here, nitrogen gas is mainly discharged from the outer gas discharge port 99a. That is, the flow rate balance of the nitrogen gas discharged from both discharge ports is such that a relatively large flow rate of nitrogen gas is discharged from the outer gas discharge port 99a while the flow rate of the nitrogen gas discharged from the gas discharge port 98a is very small. Adjust.

  The rinse liquid supplied from the rinse liquid discharge port 96a to the substrate surface Wf is spread by the centrifugal force accompanying the rotation of the substrate W, and the entire substrate surface Wf is rinsed (wet processing step). That is, the hydrofluoric acid remaining on the substrate surface Wf is washed away by the rinse liquid corresponding to the treatment liquid of the present invention and removed from the substrate surface Wf. The used rinsing liquid shaken off from the substrate W is guided to the second drainage tank 25b and discarded. Further, the nitrogen gas is supplied to the gap space SP, so that the atmosphere around the substrate surface Wf is kept in a low oxygen concentration atmosphere. For this reason, the raise of the dissolved oxygen concentration of a rinse liquid can be suppressed.

  Further, when the above-described rinsing process and the processes described later (paddle formation process, paddle film thickness reduction process, first and second replacement processes, and drying process) are performed, the plate-like member 90 of the blocking member 9 is attached to the substrate W. Rotate in the same rotational direction and at substantially the same rotational speed. Thereby, it is possible to prevent a relative rotational speed difference from being generated between the lower surface 90a of the plate-like member 90 and the substrate surface Wf, and to suppress the occurrence of an entrained air current in the gap space SP. For this reason, it is possible to prevent the mist-like rinse liquid and the low surface tension solvent from entering the gap space SP and adhering to the substrate surface Wf. Further, by rotating the plate member 90, it is possible to shake off the rinsing liquid and the low surface tension solvent adhering to the lower surface 90a and prevent the rinsing liquid and the low surface tension solvent from staying on the lower surface 90a.

  When the rinsing process for a predetermined time is completed, a paddle forming process is executed next. That is, the control unit 4 decelerates the rotation speed of the substrate W to a second speed that is slower than the first speed (step S106). As a result, the rinsing liquid discharged from the rinsing liquid discharge port 96a is accumulated on the substrate surface Wf, and a DIW liquid film is formed in a paddle shape (paddle forming process). In this embodiment, the control unit 4 sets the second speed to 10 rpm, continues supplying the rinse liquid for 9 seconds, then closes the rinse liquid valve 83 and discharges the rinse liquid from the rinse liquid discharge port 96a. Stop (step S107). As a result, a DIW liquid film is formed as shown in FIG. Although the second speed is not limited to 10 rpm, the second speed is within a range that satisfies the condition that the centrifugal force acting on the rinsing liquid is smaller than the surface tension acting between the rinsing liquid and the substrate surface Wf. Two speeds need to be set. This is because the above conditions must be satisfied in order to form a rinse liquid film in a paddle shape.

  After the DIW supply is stopped, the control unit 4 accelerates the rotation of the substrate after a predetermined time t1 has elapsed until the film thickness T1 of the paddle-like DIW liquid film becomes substantially uniform over the entire surface of the substrate W. The rotation speed is changed to a third speed higher than the second speed (step S108). The third speed is set to 40 rpm, for example. As a result, as shown in FIG. 7C, the thickness of the DIW liquid film on the substrate W changes to a value T2 smaller than the initial film thickness T1 (paddle film thickness reduction processing). A time t2 from when the rotation speed is changed to when the IPA supply described below is started will be described later.

  Then, the control unit 4 disposes the splash guard 6 at the third height position, and opens the solvent valve 76 to discharge the low surface tension solvent from the solvent discharge port 97a (step S109). Here, 100% IPA is prepared in advance in the cabinet unit 70, and the IPA is discharged from the solvent discharge port 97a toward the center of the surface of the substrate surface Wf at a low flow rate, for example, 100 (mL / min). Is done. By this IPA supply, as shown in FIG. 7 (d), the central portion of the DIW liquid film is replaced with IPA in the central portion of the surface of the substrate W, so that the replacement region SR is formed in the liquid film. It spreads toward the outer periphery (first replacement process).

  When a predetermined time, for example, 3 seconds elapses from the IPA supply, the control unit 4 accelerates the rotation speed of the substrate W from 40 rpm to 300 rpm while continuing the IPA supply. As a result, the replacement region SR expands in the radial direction of the substrate W, and the entire surface of the substrate surface Wf is replaced with the low surface tension solvent (second replacement treatment). In this embodiment, as will be described next, the rotation speed of the substrate W is accelerated in two stages (step S110).

  The control unit 4 accelerates the rotation speed of the substrate W from 40 rpm to 100 rpm over 0.5 seconds. Thus, the acceleration of the rotation speed increases the centrifugal force acting on the liquid film (DIW region + IPA region (replacement region SR)) on the substrate surface Wf, and the DIW is shaken off and the replacement region SR expands in the radial direction. . At this time, the liquid film thickness on the substrate surface Wf becomes thin corresponding to the rotation speed, and when a predetermined time (1 second in this embodiment) elapses, all the DIW existing on the outer peripheral portion of the surface of the substrate W is the substrate W. The replacement region SR is uniformly spread over the entire surface of the substrate surface Wf, and the substrate surface Wf is entirely covered with the IPA liquid film (FIG. 7E).

  Subsequently, the control unit 4 accelerates the rotation speed of the substrate W from 100 rpm to 300 rpm over 0.5 seconds. This is because, as shown in FIG. 8A, the rinsing liquid remaining in the gap of the fine pattern FP formed on the substrate surface Wf (“residual DIW” in FIG. 8A) is replaced with IPA. Is to be done. In other words, the IPA largely flows on the substrate surface Wf due to the acceleration of the rotation speed, whereby the residual DIW is replaced with IPA in the gaps of the fine pattern FP (FIG. 8B). This ensures that the DIW adhering to the substrate surface Wf is replaced with IPA. Thus, by increasing the acceleration (= (300-100) /0.5) in the second half of the second replacement process to be higher than the acceleration (= (100-40) /0.5) in the first half, Replacement efficiency can be increased. The used IPA shaken off from the substrate W is guided to the third drain tank 25c and discarded.

  Thus, when the replacement process is completed, the control unit 4 stops the supply of IPA (step S111), increases the rotation speed of the chuck rotation mechanism 13, and rotates the substrate W at a high speed (for example, 1000 rpm) (step S112). Thereby, the IPA adhering to the substrate surface Wf is shaken off, and the drying process (spin drying) of the substrate W is executed (drying process). At this time, since the low surface tension solvent has entered the gaps between the patterns, it is possible to prevent pattern collapse and the occurrence of watermarks. Further, since the gap space SP is filled with nitrogen gas supplied from the gas discharge port 98a and the outer gas discharge port 99a, the drying time is shortened and the liquid component (low surface tension solvent) adhering to the substrate W is reduced. The generation of watermarks can be more effectively suppressed by reducing the elution of the oxidizable substances. When the drying process of the substrate W is completed, the control unit 4 controls the chuck rotating mechanism 13 to stop the rotation of the substrate W. Then, the splash guard 6 is positioned at the retracted position, and the spin chuck 1 is protruded from above the splash guard 6. Thereafter, the substrate transfer means carries the processed substrate W out of the apparatus (step S113), and a series of cleaning processes for one substrate W is completed.

  Here, the correspondence between the rotation speed and the rotation time of the substrate in the film thickness reduction process will be described with reference to FIG. FIG. 9 is a diagram showing the relationship between the rotation speed of the substrate and the liquid film maintenance time on the substrate. More specifically, FIG. 9 shows that the substrate on which the pattern on the surface is formed is rotated at 10 rpm, DIW is supplied to the surface to form a paddle-like liquid film, and the rotation speed is increased after the DIW supply is stopped. It is a graph which shows the result of having measured variously and measuring how long a paddle-like liquid film is maintained. “Liquid film maintenance time” means the time from when the DIW supply is stopped to when at least a part of the substrate surface originally covered with the liquid film is exposed after the liquid film is interrupted.

  As shown in FIG. 9, the DIW liquid film was maintained for 30 seconds or more when the rotation speed of the substrate was maintained at 10 rpm, but the liquid film maintenance time decreased with an increase in the rotation speed. While the maintenance time was about 10 seconds, it was less than 5 seconds at 70 rpm. Further, at a higher rotational speed, a part of the surface of the substrate was immediately exposed and the liquid film could hardly be maintained. Since exposure of the substrate surface causes watermarks and spots, it is necessary to avoid this. Therefore, the time t2 (FIG. 6) from when the rotation speed of the substrate is increased to when the IPA supply is started must be shorter than the rotation speed after acceleration, that is, the liquid film maintenance time at the third speed. It is preferable to set the time t2 to half or less of the liquid film maintenance time with a sufficient margin.

  Even during the period when the paddle-like liquid film is maintained at the second speed, DIW on the substrate is gradually flowing out, so the time t1 from when the DIW supply is stopped until the substrate is started to accelerate is t1. However, it is preferable to make it as short as possible within the range where the paddle is stable. More preferably, the total time t3 of these two times t1 and t2 should be shorter than the liquid film maintenance time at the third speed. For example, when the third speed is 40 rpm, the time t1 from when DIW supply is stopped until the substrate is started to be accelerated and the time t2 from when the rotation speed of the substrate is increased to when the IPA supply is started are each 0. About 5 to 3 seconds.

  As described above, according to this embodiment, after the substrate W is rotated and DIW that is the rinsing liquid is supplied to perform the rinsing process, the rotational speed is once decreased (10 rpm in this embodiment). After the paddle-like liquid film is formed and then the rotational speed is further increased (40 rpm in this embodiment), the supply of IPA as a low surface tension solvent is started. In this way, it is possible to reliably form a paddle-like liquid film on the substrate by once reducing the rotation speed, and then increasing the rotation speed somewhat while maintaining the liquid film on the substrate. The film thickness can be reduced.

  Since the supply of IPA is started to the DIW liquid film whose film thickness has been reduced in this way, the amount of DIW remaining on the substrate W at the time of starting the supply of IPA is reduced. . Therefore, in this embodiment, the amount of IPA used for replacement is small. In addition, since IPA has a lower surface tension than DIW and tends to spread on the substrate W, and the rotational speed at the time of IPA supply is higher than that at the time of paddle formation, the IPA is on the substrate W as compared with the case of a lower rotational speed. The IPA liquid film formed on the substrate becomes thinner. As a result, the entire surface Wf of the substrate W can be covered with a smaller amount of IPA. This also has the effect of further reducing the amount of IPA used. Furthermore, since the amount of DIW to be replaced is small, the processing time required for the replacement process can be shortened.

  The present invention is not limited to the above-described embodiment, and various modifications other than those described above can be made without departing from the spirit of the present invention. For example, in the above-described embodiment, the rotation speed of the substrate W is accelerated in two stages in the replacement process. However, this is not essential in the present invention, and the acceleration may be performed in one stage or in three stages or more. Good.

  In the above embodiment, after the paddle is formed while rotating the substrate W at the second speed (10 rpm), the supply of IPA is started after the rotation speed is changed to the third speed (40 rpm). However, the gist of the present invention is that the supply of IPA is started in a state where the rotational speed is higher than that at the time of paddle formation (however, the liquid film on the substrate W is not interrupted, that is, the paddle state is maintained). From, for example, the supply of IPA may be started while accelerating from the second speed. In addition, it is not always necessary to maintain the third speed for a certain period. After the paddle formation process, the third speed is continuously accelerated toward the final rotation speed (for example, 300 rpm) in the replacement process, The supply of IPA may be started before the DIW liquid film on the substrate is interrupted.

  Moreover, in the said embodiment, although IPA is used as a low surface tension solvent, the liquid mixture of IPA and DIW may be created in the cabinet part 70, and this may be used as a low surface tension solvent. Moreover, the production | generation method of a liquid mixture is not limited to this. For example, an organic solvent component such as IPA may be mixed in-line on a liquid supply path for supplying DIW toward the liquid supply path (or nozzle) of the blocking member to generate a mixed liquid. Further, the liquid mixture generating means such as the cabinet section is not limited to being provided in the substrate processing apparatus, and the liquid mixture generated in another apparatus provided separately from the substrate processing apparatus is provided in the substrate processing apparatus. It may be supplied to the substrate surface Wf via a blocking member. Further, a solvent essentially containing a surfactant may be used instead of the solvent containing an organic solvent component such as IPA.

  In the above embodiment, DIW is used as the rinse liquid. However, a liquid containing a component that does not have a chemical cleaning action on the substrate surface Wf such as carbonated water (DIW + CO2) may be used as the rinse liquid. Good. In this case, a mixture of a liquid (carbonated water) having the same composition as the rinse liquid adhering to the substrate surface Wf and an organic solvent component may be used as the mixed liquid. Further, while carbonated water is used as the rinse liquid, the mixed liquid may be a mixture of DIW, which is the main component of carbonated water, and an organic solvent component. Further, while DIW is used as the rinsing liquid, the mixed liquid may be a mixture of carbonated water and an organic solvent component. In short, a mixture of a liquid adhering to the substrate surface Wf, a liquid having the same main component, and an organic solvent component may be used as the mixed liquid. In addition to DIW and carbonated water, hydrogen water, dilute concentration (for example, about 1 ppm) ammonia water, dilute hydrochloric acid, and the like can be used as the rinse liquid.

  In the above embodiment, the present invention is applied to the process of rinsing and drying the substrate after the chemical treatment with hydrofluoric acid. However, the present invention is applied to the treatment of the substrate treated with another chemical solution. Also good. However, the process of forming a paddle-like liquid film with a rinsing liquid on the substrate and replacing it with a low surface tension solvent, as in this embodiment, and drying, especially after the hydrophobization treatment for hydrophobizing the surface of the substrate. This is effective when rinsing is performed using a rinsing liquid as a main component, and by applying the present invention to such treatment, a particularly remarkable effect can be obtained.

  The present invention relates to a semiconductor wafer, a glass substrate for photomask, a glass substrate for liquid crystal display, a glass substrate for plasma display, a substrate for FED (Field Emission Display), a substrate for optical disk, a substrate for magnetic disk, a substrate for magneto-optical disk, etc. The present invention can be applied to a substrate processing apparatus and a substrate processing method for performing a drying process on the entire surface of a substrate including the substrate.

It is a figure showing one embodiment of a substrate processing device concerning this invention. It is a block diagram which shows the main control structures of the substrate processing apparatus of FIG. It is a longitudinal cross-sectional view which shows the principal part of the interruption | blocking member with which the substrate processing apparatus of FIG. 1 was equipped. FIG. 4 is a cross-sectional view (cross-sectional view) taken along the line A-A ′ of FIG. 3. It is a flowchart which shows operation | movement of a substrate processing apparatus. 2 is a timing chart showing the operation of the substrate processing apparatus of FIG. 1. It is a schematic diagram which shows operation | movement of the substrate processing apparatus of FIG. It is a schematic diagram which shows operation | movement of the substrate processing apparatus of FIG. It is a figure which shows the relationship between the rotational speed of a board | substrate, and the liquid film maintenance time on a board | substrate.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Spin chuck 4 ... Control unit (control means)
7. Solvent supply unit (solvent supply means)
8. Rinsing liquid supply unit (processing liquid supply means)
13 ... Chuck rotating mechanism (substrate rotating means)
17 ... chuck pin (substrate holding means)
J: Rotating shaft SR ... Replacement area Wf ... Substrate surface W ... Substrate

Claims (7)

A wet processing step of performing wet processing on the surface of the substrate using a processing liquid while rotating the substrate in a substantially horizontal state at a first speed;
A paddle forming step of reducing the rotational speed of the substrate to a second speed and forming a liquid film of the processing liquid on the substrate in a paddle shape;
A paddle film thickness reduction step of reducing the thickness of the liquid film on the substrate by making the rotation speed of the substrate higher than the second speed;
A replacement step of supplying a low surface tension solvent having a surface tension lower than that of the treatment liquid to the liquid film central portion of the substrate surface and replacing the treatment liquid on the substrate with the low surface tension solvent;
A substrate processing method comprising: a drying step of removing the low surface tension solvent from the substrate surface and drying the substrate surface after the replacing step.   2. The substrate processing method according to claim 1, wherein in the replacing step, the supply of the low surface tension solvent is started before the substrate surface covered with the liquid film in the paddle forming step is exposed. In the paddle film thickness reduction step, the rotation speed of the substrate is changed to a third speed that is lower than the first speed and higher than the second speed,
3. The substrate processing method according to claim 1, wherein, in the replacing step, the supply of the low surface tension solvent is started to the substrate rotating at the third speed.   3. The substrate processing method according to claim 1, wherein in the replacement step, the supply of the low surface tension solvent is started during acceleration of the substrate. Before the wet processing step, comprising a hydrophobic treatment step of hydrophobizing the substrate surface,
5. The substrate processing method according to claim 1, wherein, in the wet processing step, a rinsing process for rinsing the substrate surface with a rinsing liquid as the processing liquid containing water as a main component is performed. Substrate holding means for holding the substrate in a substantially horizontal posture;
Substrate rotating means for rotating the substrate held by the substrate holding means around a predetermined rotation axis;
Treatment liquid supply means for supplying a treatment liquid for subjecting the substrate to a wet process on the surface of the substrate held by the substrate holding means;
A solvent supply means for supplying a low surface tension solvent having a surface tension lower than that of the processing liquid to the center of the surface of the substrate after the wet processing, and replacing the processing liquid on the substrate with the low surface tension solvent. When,
Control means for controlling the substrate rotation means to adjust the rotation speed of the substrate,
The control means sets the rotation speed of the substrate in the wet processing to the first speed, while the rotation speed of the substrate before the supply of the processing liquid from the processing liquid supply means is stopped. Is reduced to a second speed to form a liquid film of the processing liquid on the substrate in a paddle shape, and then the rotation speed of the substrate is reduced before the supply of the low surface tension solvent is started. The substrate processing apparatus is characterized by changing to a speed higher than the second speed.   The control means, after the processing liquid on the substrate is replaced with the low surface tension solvent, further increases the rotational speed of the substrate to shake off the low surface tension solvent on the substrate and dry the substrate. Item 7. The substrate processing apparatus according to Item 6.

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