JP5192853B2 - Substrate processing method and substrate processing apparatus - Google Patents

Description

  The present invention provides a substrate in which a processing liquid is supplied to a substrate surface and a predetermined wet process is performed on the substrate surface, and then a low surface tension solvent is supplied to the substrate surface wetted with the processing liquid to replace the processing liquid. The present invention relates to a processing method and a substrate processing apparatus. The substrates to be processed include semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, FED (Field Emission Display) substrates, optical disk substrates, and magnetic disks. And a magneto-optical disk substrate.

  IPA (isopropyl alcohol: isopropyl alcohol: isopropyl alcohol, which has a lower surface tension than pure water) is one of the methods for removing the rinsing liquid adhering to the substrate surface after chemical liquid treatment with chemical liquid and rinse treatment with pure water or the like is performed. A treatment method using a liquid (low surface tension solvent) containing an organic solvent component such as alcohol) is known. For example, in Patent Document 1, after the pure water rinse process, the rotation speed of the substrate is reduced to the paddle process rotation speed, and then the supply of pure water is stopped. Is described, and further, the rotation speed of the substrate is increased to shake off the organic solvent and dry the substrate.

JP 2006-140285 A (FIGS. 4 and 5)

  In the technique described in Patent Document 1 described above, the low surface tension solvent is supplied while maintaining the substrate at the paddle processing rotation speed. However, the low surface tension solvent is widely diffused in the paddle-like liquid film by the rinse liquid. However, a certain amount of time is required to exert the effect of reducing the surface tension. In particular, when the substrate to be processed has a fine pattern formed on its surface, it takes a considerable amount of time (for example, 10 seconds or more) to spread the low surface tension solvent over the entire surface of the substrate. . During this time, if the supply of the low surface tension solvent is continued, the amount used will increase.

  The present invention has been made in view of the above problems. In a substrate processing method and a substrate processing apparatus for replacing a processing liquid on a substrate surface with a low surface tension solvent such as IPA, the processing liquid is used with a small amount of low surface tension solvent used. It aims at providing the technique which can be replaced efficiently and reliably.

In order to achieve the above object, a substrate processing method according to the present invention includes a wet processing step of performing wet processing on a substrate surface using a processing liquid while rotating a substantially horizontal substrate at a first speed, A paddle forming step of reducing the rotation speed to the second speed to form a liquid film of the processing liquid on the substrate in a paddle shape, and a surface tension lower than that of the processing liquid for the liquid film on the rotating substrate is low A solvent supply step of stopping the supply of the low surface tension solvent after supplying a predetermined amount of the surface tension solvent, and a rotation higher than the rotation speed of the substrate in the solvent supply step without supplying the low surface tension solvent after the solvent supply step. The stirring process of stirring the liquid on the substrate by rotating the substrate at a speed, and the liquid on the substrate by the low surface tension solvent by rotating the substrate while supplying the low surface tension solvent to the substrate surface after the stirring process. Replacement process to replace It is characterized by comprising a drying step of drying the low surface tension solvent is removed from the substrate surface by the substrate surface after the displacement step.

In order to achieve the above object, the substrate processing apparatus according to the present invention includes a substrate holding unit that holds the substrate in a substantially horizontal posture, and a substrate rotation that rotates the substrate held by the substrate holding unit around a predetermined rotation axis. Means, a processing liquid supply means for supplying a processing liquid for performing wet processing on the substrate to the surface of the substrate held by the substrate holding means, and a surface more centrally than the processing liquid at the center of the surface of the substrate after the wet processing. A solvent supplying means for supplying a low surface tension solvent having a low tension; and a control means for controlling the supply of the low surface tension solvent to the substrate surface by the solvent supplying means. The control means forms a paddle-like liquid film of the processing liquid on the substrate by decelerating the liquid from the wet processing, while the control means has a predetermined amount of low surface tension against the liquid film of the processing liquid on the rotating substrate. After supplying the solvent its supply Stop, then restart the supply of the low surface-tension solvent after a predetermined time period is replaced by a low surface tension solvent liquid on the substrate, the substrate rotation means, the supply of the low surface-tension solvent is stopped the rotation of the substrate The liquid on the substrate is stirred until the supply of the low surface tension solvent is resumed at a high speed .

  In the invention configured as described above, a paddle-like liquid film is formed on the substrate by the processing liquid, and after a predetermined amount of the low surface tension solvent is added to the liquid film, the supply of the low surface tension solvent is once stopped. Then, by rotating the substrate in this state, the liquid film on the substrate is stirred, and the diffusion of the low surface tension solvent to the processing liquid on the substrate is promoted. Thereafter, the supply of the low surface tension solvent is resumed, and the liquid on the substrate is replaced with the low surface tension solvent. As described above, after adding the low surface tension solvent to the liquid film on the substrate, by providing a period for rotating the substrate without supplying the low surface tension solvent, the low surface tension solvent is spread over the entire surface of the substrate. The amount of low surface tension solvent used in the meantime can be suppressed. In addition, since the low surface tension solvent is spread over each part of the substrate surface and the surface tension of the liquid on the substrate is lowered as compared with the case of the treatment liquid alone, the supply of the low surface tension solvent is resumed. The solvent can be diffused smoothly and the treatment liquid can be replaced efficiently. In particular, even when a pattern is formed on the surface of the substrate, it is possible to perform replacement with a low surface tension solvent reliably to the details.

  In the substrate processing method configured as described above, in the stirring step, the rotation speed of the substrate may be higher than the second speed. By increasing the rotation speed, the diffusion of the low surface tension solvent on the substrate can be further promoted. In addition, since a low surface tension solvent is added to the liquid film of the processing liquid on the substrate in advance, it is possible to prevent the liquid film on the substrate from being broken and exposing the substrate surface when the rotational speed is increased. is there.

  In the solvent supply step, the substrate may be rotated at the second speed. By adding the low surface tension solvent to the liquid film while maintaining the rotational speed when forming the paddle-like liquid film, the processing liquid is shaken off before the low surface tension solvent reaches the entire surface of the substrate, and the substrate surface is It is possible to prevent exposure. Moreover, control is simplified by maintaining the same rotational speed as in the previous step.

  Further, it is desirable to start supplying the low surface tension solvent in the replacement step before the substrate surface covered with the liquid film in the stirring step is exposed. By continuing to rotate the substrate without supplying liquid to the substrate, the thickness of the liquid film on the substrate decreases, and eventually the continuity of the liquid film is interrupted and the substrate surface is exposed. By starting the supply of the low surface tension solvent before such a state is reached, it is possible to prevent the occurrence of watermarks and spots due to uneven drying of the substrate surface.

  In addition, a hydrophobization treatment step for hydrophobizing the substrate surface is provided before the wet treatment step, and in the wet treatment step, the substrate surface is rinsed with a rinse liquid as the treatment liquid mainly containing water. A rinse process may be performed. The treatment of forming a paddle-like rinsing liquid film on a substrate, substituting it with a low surface tension solvent and drying it is particularly effective when a substrate having a hydrophobic surface is to be treated. By applying the present invention when performing such treatment, the substrate can be dried without generating defects with a small amount of use of a low surface tension solvent and in a short treatment time.

  In addition, as a “low surface tension solvent” used in the present invention, a 100% organic solvent component or a mixed solution thereof with pure water can be used. Moreover, it may replace with the solvent containing an organic solvent component as a low surface tension solvent, and may use the solvent which essentially contains surfactant. Here, an alcohol-based organic solvent can be used as the “organic solvent component”. As the alcohol-based organic solvent, isopropyl alcohol, ethyl alcohol, or methyl alcohol can be used from the viewpoints of safety, cost, and the like, and isopropyl alcohol (IPA) is particularly preferable.

  According to this invention, after forming a liquid film of the processing liquid on the paddle on the substrate, a predetermined amount of the low surface tension solvent is supplied to the liquid film, and the substrate is rotated without supplying the low surface tension solvent. To spread the low surface tension solvent to each part of the substrate. By providing a period during which the substrate is rotated without supplying the low surface tension solvent, the amount of the low surface tension solvent used can be reduced as compared with the method of continuously supplying the low surface tension solvent. In addition, since the supply of the low surface tension solvent is resumed with the surface tension of the liquid on the substrate being lowered by the addition of the low surface tension solvent as compared with the case of the treatment liquid alone, the subsequent diffusion of the low surface tension solvent is smooth. This makes it possible to efficiently replace the treatment liquid. In particular, even when a pattern is formed on the surface of the substrate, it is possible to perform replacement with a low surface tension solvent reliably to the details.

  FIG. 1 is a view showing an embodiment of a substrate processing apparatus according to the present invention. FIG. 2 is a block diagram showing a main control configuration of the substrate processing apparatus of FIG. This substrate processing apparatus is a single-wafer type substrate processing apparatus used for a cleaning process for removing unnecessary substances adhering to a surface Wf of a substrate W such as a semiconductor wafer. More specifically, the substrate surface Wf was wetted with a rinsing solution after being subjected to a chemical treatment with a chemical solution such as hydrofluoric acid and a rinsing treatment with pure water or DIW (deionized water). An apparatus for drying the substrate surface Wf. In this embodiment, the substrate surface Wf means a pattern formation surface on which a device pattern made of poly-Si or the like is formed.

  The substrate processing apparatus includes a spin chuck 1 that rotates while holding the substrate W in a substantially horizontal posture with the substrate surface Wf facing upward, and a chemical solution toward the surface Wf of the substrate W held by the spin chuck 1. A chemical solution discharge nozzle 3 for discharging, and a blocking member 9 arranged at a position above the spin chuck 1 are provided.

  The spin chuck 1 has a rotation support shaft 11 connected to a rotation shaft of a chuck rotation mechanism 13 including a motor, and can rotate about a rotation axis J (vertical axis) by driving the chuck rotation mechanism 13. The rotating support shaft 11 and the chuck rotating mechanism 13 are accommodated in a cylindrical casing 2. A disc-shaped spin base 15 is integrally connected to the upper end portion of the rotation spindle 11 by a fastening component such as a screw. Therefore, the spin base 15 rotates around the rotation axis J by driving the chuck rotation mechanism 13 in accordance with an operation command from the control unit 4 that controls the entire apparatus. Thus, in this embodiment, the chuck rotating mechanism 13 functions as the “substrate rotating means” of the present invention. Further, the control unit 4 controls the chuck rotation mechanism 13 to adjust the rotation speed.

  Near the peripheral edge of the spin base 15, a plurality of chuck pins 17 for holding the peripheral edge of the substrate W are provided upright. Three or more chuck pins 17 may be provided to securely hold the circular substrate W, and are arranged at equiangular intervals along the peripheral edge of the spin base 15. Each of the chuck pins 17 includes a substrate support portion that supports the peripheral portion of the substrate W from below, and a substrate holding portion that holds the substrate W by pressing the outer peripheral end surface of the substrate W supported by the substrate support portion. Yes. Each chuck pin 17 is configured to be switchable between a pressing state in which the substrate holding portion presses the outer peripheral end surface of the substrate W and a released state in which the substrate holding portion is separated from the outer peripheral end surface of the substrate W.

  When the substrate W is delivered to the spin base 15, the plurality of chuck pins 17 are released, and when the substrate W is cleaned, the plurality of chuck pins 17 are pressed. To do. By setting the pressed state, the plurality of chuck pins 17 can grip the peripheral edge of the substrate W and hold the substrate W in a substantially horizontal posture at a predetermined interval from the spin base 15. As a result, the substrate W is supported with its front surface (pattern forming surface) Wf facing upward and the back surface Wb facing downward. Thus, in this embodiment, the chuck pin 17 functions as the “substrate holding means” of the present invention. The substrate holding means is not limited to the chuck pins 17, and a vacuum chuck that supports the substrate W by sucking the substrate back surface Wb may be used.

  The chemical liquid discharge nozzle 3 is connected to a chemical liquid supply source via a chemical valve 31. For this reason, when the chemical liquid valve 31 is opened and closed based on the control command from the control unit 4, the chemical liquid is pumped from the chemical liquid supply source toward the chemical liquid discharge nozzle 3, and the chemical liquid is discharged from the chemical liquid discharge nozzle 3. Note that hydrofluoric acid or BHF (buffered hydrofluoric acid) or the like is used as the chemical solution. Further, a nozzle moving mechanism 33 (FIG. 2) is connected to the chemical liquid discharge nozzle 3, and the chemical liquid discharge nozzle 3 is moved to the substrate W by driving the nozzle moving mechanism 33 in accordance with an operation command from the control unit 4. Can be reciprocated between the discharge position above the rotation center and the standby position retracted to the side from the discharge position.

  The blocking member 9 includes a plate-like member 90, a rotation support shaft 91 that is hollow inside, and supports the plate-like member 90, and an insertion shaft 95 that is inserted through the hollow portion of the rotation support shaft 91. ing. The plate-like member 90 is a disk-like member having an opening at the center, and is disposed to face the surface Wf of the substrate W held by the spin chuck 1. The plate-like member 90 has a lower surface (bottom surface) 90 a that is a substrate facing surface that faces the substrate surface Wf substantially in parallel, and the planar size of the plate member 90 is equal to or larger than the diameter of the substrate W. The plate-like member 90 is attached substantially horizontally to the lower end portion of the rotation support shaft 91 having a substantially cylindrical shape, and the rotation support shaft 91 is rotatable about a rotation axis J passing through the center of the substrate W by an arm 92 extending in the horizontal direction. Is retained. A bearing (not shown) is interposed between the outer peripheral surface of the insertion shaft 95 and the inner peripheral surface of the rotation support shaft 91. A blocking member rotating mechanism 93 and a blocking member lifting mechanism 94 are connected to the arm 92.

  The blocking member rotation mechanism 93 rotates the rotation support shaft 91 around the rotation axis J in response to an operation command from the control unit 4. When the rotation support shaft 91 is rotated, the plate member 90 rotates integrally with the rotation support shaft 91. The blocking member rotating mechanism 93 is configured to rotate the plate-like member 90 (lower surface 90a) in the same rotational direction as the substrate W and at substantially the same rotational speed in accordance with the rotation of the substrate W held by the spin chuck 1. Yes.

  Further, the blocking member elevating mechanism 94 can make the blocking member 9 close to and opposite to the spin base 15 according to an operation command from the control unit 4, or can be separated from the spin base 15. Specifically, the control unit 4 operates the blocking member elevating mechanism 94 to raise the blocking member 9 to a separation position above the spin chuck 1 when the substrate processing apparatus carries the substrate W in and out. Let On the other hand, when a predetermined process is performed on the substrate W, the substrate W is cut off to a predetermined facing position (position shown in FIG. 1) set very close to the surface Wf of the substrate W held by the spin chuck 1. The member 9 is lowered. In this embodiment, after the rinsing process is started, the blocking member 9 is lowered from the separated position to the facing position, and is continuously positioned until the drying process is completed.

  FIG. 3 is a longitudinal sectional view showing the main part of the blocking member provided in the substrate processing apparatus of FIG. 4 is a cross-sectional view (cross-sectional view) taken along the line A-A ′ of FIG. An insertion shaft 95 inserted in the hollow portion of the rotation support shaft 91 has a circular cross section. This is to make the gaps between the insertion shaft 95 (non-rotating side member) and the rotation support shaft 91 (rotating side member) uniform over the entire circumference. The gap between the insertion shaft 95 and the rotation support shaft 91 is sealed from the outside. Three fluid supply paths are formed in the insertion shaft 95 so as to extend in the vertical axis direction. That is, a rinse liquid supply path 96 serving as a rinse liquid path, a solvent supply path 97 serving as a path for a low surface tension solvent having an organic solvent component that dissolves in the rinse liquid and lowers the surface tension, and an inert gas such as nitrogen gas A gas supply path 98 serving as a passage is formed in the insertion shaft 95. The rinsing liquid supply path 96, the solvent supply path 97, and the gas supply path 98 are respectively connected to an interpolating shaft 95 made of PTFE (polytetrafluoroethylene) with PFA (tetrafluoroethylene / perfluoroalkyl vinyl ether copolymer resin). Tetrafluoroethylene and perfluoroalkylvinylether) tubes 96b, 97b, 98b are inserted in the axial direction.

  Then, the lower ends of the rinse liquid supply path 96, the solvent supply path 97, and the gas supply path 98 become the rinse liquid discharge port 96a, the solvent discharge port 97a, and the gas discharge port 98a, respectively, of the substrate W held on the spin chuck 1. Opposite the surface Wf. In this embodiment, the diameter of the insertion shaft is 18 to 20 mm. Moreover, the diameters of the rinse liquid discharge port 96a, the solvent discharge port 97a, and the gas discharge port 98a are formed to 4 mm, 1 to 2 mm, and 4 mm, respectively. Thus, in this embodiment, the diameter of the solvent discharge port 97a is smaller than the diameter of the rinse liquid discharge port 96a. Thereby, the trouble shown below can be prevented. That is, the surface tension of the low surface tension solvent is lower than that of the rinse liquid (DIW). For this reason, when low surface tension solvent is discharged from the solvent discharge port having the same diameter as that for rinsing liquid discharge, the low surface tension solvent is discharged from the solvent discharge port after the discharge of the low surface tension solvent is stopped. There is a risk of falling. On the other hand, when the rinse liquid is discharged from the rinse liquid discharge port having the same diameter as that formed for solvent discharge, the discharge speed of the rinse liquid is increased. As a result, the rinse liquid (DIW), which is an electrical insulator, may collide with the substrate surface Wf at a relatively high speed, so that the supply portion of the substrate surface Wf to which the rinse liquid is directly supplied may be charged and oxidized. is there.

  In contrast, in this embodiment, the discharge port for the low surface tension solvent and the rinse liquid are provided separately, and the diameter of the solvent discharge port 97a is smaller than the diameter of the rinse liquid discharge port 96a. For this reason, it is possible to prevent the low surface tension solvent from dropping from the solvent discharge port, to suppress an increase in the discharge speed of the rinse liquid from the rinse liquid discharge port, and to suppress oxidation due to charging of the substrate surface Wf. it can.

  In this embodiment, the rinse liquid discharge port 96a is provided at a position shifted radially outward from the central axis of the blocking member 9, that is, the rotation axis J of the substrate W. Thereby, it is avoided that the rinse liquid discharged from the rinse liquid discharge port 96a is concentrated and supplied to one point (the rotation center W0 of the substrate W) of the substrate surface Wf. As a result, charged portions on the substrate surface Wf can be dispersed, and oxidation due to charging of the substrate W can be reduced. On the other hand, if the rinse liquid discharge port 96a is too far from the rotation axis J, it is difficult to make the rinse liquid reach the rotation center W0 on the substrate surface Wf. Therefore, in this embodiment, the distance L from the rotation axis J in the horizontal direction to the rinse liquid discharge port 96a (discharge port center) is set to about 4 mm. Here, the upper limit of the distance L at which the rinse liquid (DIW) can be supplied to the rotation center W0 on the substrate surface Wf is 20 mm under the following conditions.

Flow rate of DIW: 2L / min
Substrate rotation speed: 1500rpm
The state of the substrate surface: the central portion of the surface is a hydrophobic surface. As for the upper limit value of the distance from the rotation axis J to the solvent discharge port 97a (discharge port center), as long as the substrate rotation speed is set to 1500 rpm, the rotation axis J described above is used. Is basically the same as the upper limit (20 mm) of the distance L from the rinsing liquid discharge port 96a (discharge port center).

  On the other hand, with respect to the distance from the rotation axis J to the gas discharge port 98a (discharge port center), a gap space formed between the blocking member 9 (plate member 90) positioned at the opposing position and the substrate surface Wf. As long as nitrogen gas can be supplied to SP, it is not particularly limited and is optional. However, from the viewpoint of blowing nitrogen gas onto a solvent layer made of a low surface tension solvent formed on the substrate surface Wf as described later and discharging the solvent layer from the substrate W, the gas discharge port 98a has a rotational axis J. It is preferable to provide at the top or in the vicinity thereof.

  A space portion formed between the inner wall surface of the rotation support shaft 91 and the outer wall surface of the insertion shaft 95 constitutes the outer gas supply path 99, and the lower end of the outer gas supply path 99 is an annular outer gas. The discharge port 99a is formed. That is, the blocking member 9 includes an outer gas discharge port 99a in addition to a gas discharge port 98a for discharging nitrogen gas toward the center of the substrate surface Wf, and a rinse liquid discharge port 96a, a solvent discharge port 97a, and a gas discharge port. It is provided radially outward with respect to 98a and so as to surround the rinse liquid discharge port 96a, the solvent discharge port 97a, and the gas discharge port 98a. The opening area of the outer gas discharge port 99a is much larger than the opening area of the gas discharge port 98a. Thus, since two types of gas discharge ports are provided in the blocking member 9, nitrogen gas having different flow rates and flow rates can be discharged from the discharge ports. For example, (1) In order to keep the atmosphere around the substrate surface Wf in an inert gas atmosphere, it is desirable to supply nitrogen gas at a relatively large flow rate and low speed so as not to blow off the liquid on the substrate surface Wf. On the other hand, (2) when removing the solvent layer of the low surface tension solvent on the substrate surface Wf from the substrate surface Wf, supply nitrogen gas to the center of the surface of the substrate W at a relatively small flow rate and at a high speed. Is desired. Therefore, in the case (1), nitrogen gas is mainly discharged from the outer gas discharge port 99a, and in the case (2), nitrogen gas is mainly discharged from the gas discharge port 98a. Nitrogen gas can be supplied toward the substrate surface Wf at an appropriate flow rate and flow rate depending on the use of the gas.

  Further, the tip (lower end) of the insertion shaft 95 is not flush with the lower surface 90a of the plate-like member 90, and is retracted upward from the same plane including the lower surface 90a (FIG. 3). According to such a configuration, it is possible to diffuse the nitrogen gas before the nitrogen gas discharged from the gas discharge port 98a reaches the substrate surface Wf and reduce the flow rate of the nitrogen gas to some extent. That is, if the flow rate of nitrogen gas from the gas discharge port 98a is too high, the nitrogen gas from the outer gas discharge port 99a interferes with each other and the solvent layer of the low surface tension solvent on the substrate surface Wf is discharged from the substrate W. It becomes difficult. As a result, droplets remain on the substrate surface Wf. On the other hand, according to the above configuration, the flow rate of nitrogen gas from the gas discharge port 98a is relaxed, and the solvent layer of the low surface tension solvent on the substrate surface Wf can be reliably discharged from the substrate W.

  Returning to FIG. 1, the description will be continued. The upper end portion of the rinsing liquid supply path 96 is connected to the rinsing liquid supply unit 8. The rinsing liquid supply unit 8 includes a rinsing liquid supply pipe 85 having one end connected to a DIW supply source (not shown) constituted by a factory utility or the like, and the other end of the rinsing liquid supply pipe 85 is the rinsing liquid. It is connected to the valve 83. The rinse liquid supply unit 8 having such a configuration can discharge DIW as a rinse liquid from the rinse liquid discharge port 96a when the rinse liquid valve 83 is opened. In this embodiment, DIW which is a rinsing liquid corresponds to the “processing liquid” of the present invention, and the rinsing liquid supply unit 8 functions as the “processing liquid supply means” of the present invention.

  The upper end of the solvent supply path 97 is connected to the solvent supply unit 7 that functions as the “solvent supply means” of the present invention. The solvent supply unit 7 includes a cabinet unit 70 for generating a low surface tension solvent, and the low surface tension solvent generated in the cabinet unit 70 can be pumped to the solvent supply path 97. As the organic solvent component, a substance that dissolves in DIW (surface tension: 72 mN / m) and lowers the surface tension, for example, isopropyl alcohol (surface tension: 21 to 23 mN / m) is used. The organic solvent component is not limited to isopropyl alcohol, and various organic solvent components such as ethyl alcohol and methyl alcohol may be used. The organic solvent component is not limited to a liquid, and various alcohol vapors may be dissolved in DIW as an organic solvent component to produce a low surface tension solvent.

  The cabinet unit 70 includes a storage tank 72 that stores a low surface tension solvent. One end of a DIW introduction pipe 73 for supplying DIW into the storage tank 72 is taken into the storage tank 72, and the other end is connected to a DIW supply source through an open / close valve 73a. Further, a flow meter 73b is interposed in the course of the DIW introduction pipe 73, and the flow meter 73b measures the flow rate of DIW introduced into the storage tank 72 from the DIW supply source. Based on the flow rate measured by the flow meter 73b, the control unit 4 controls the opening / closing valve 73a so that the flow rate of DIW flowing through the DIW introduction pipe 73 becomes a target flow rate (target value).

  Similarly, one end of the IPA introduction pipe 74 for supplying the IPA liquid into the storage tank 72 is taken into the storage tank 72, and the other end is connected to the IPA supply source via the opening / closing valve 74a. Yes. Further, a flow meter 74b is provided in the middle of the route of the IPA introduction pipe 74, and the flow meter 74b measures the flow rate of the IPA liquid introduced into the storage tank 72 from the IPA supply source. Then, the control unit 4 controls opening / closing of the opening / closing valve 74a based on the flow rate measured by the flow meter 74b so that the flow rate of the IPA liquid flowing through the IPA introduction pipe 74 becomes a target flow rate (target value).

  In this embodiment, the volume percentage of IPA in the low surface tension solvent (hereinafter referred to as “IPA concentration”) can be adjusted, that is, 100% IPA can be supplied as the low surface tension solvent, It is also possible to supply a mixed liquid in which DIW is mixed as a low surface tension solvent. When 100% IPA is always used as the low surface tension solvent, IPA may be directly supplied via a solvent valve 76 described below.

  The other end of the solvent supply pipe 75 whose one end is connected to the solvent supply path 97 is inserted into the storage tank 72, and the low surface tension solvent stored in the storage tank 72 is supplied to the solvent supply path via the solvent valve 76. 97 can be supplied. The solvent supply pipe 75 adjusts the temperature of the low surface tension solvent sent to the solvent supply pipe 75 by the metering pump 77 that feeds the low surface tension solvent stored in the storage tank 72 to the solvent supply pipe 75. And a filter 79 for removing foreign matter in the low surface tension solvent. Further, the solvent supply pipe 75 is provided with a concentration meter 80 for monitoring the IPA concentration.

  One end of a solvent circulation pipe 81 is branched and connected to the solvent supply pipe 75 between the solvent valve 76 and the concentration meter 80, and the other end of the solvent circulation pipe 81 is connected to the storage tank 72. A circulation valve 82 is interposed in the solvent circulation pipe 81. During the operation of the apparatus, the metering pump 77 and the temperature controller 78 are always driven, and while the low surface tension solvent is not supplied to the substrate W, the solvent valve 76 is closed and the circulation valve 82 is opened. As a result, the low surface tension solvent fed from the storage tank 72 by the metering pump 77 is returned to the storage tank 72 through the solvent circulation pipe 81. That is, while the low surface tension solvent is not supplied to the substrate W, the low surface tension solvent circulates in the circulation path including the storage tank 72, the solvent supply pipe 75, and the solvent circulation pipe 81. On the other hand, when it is time to supply the low surface tension solvent to the substrate W, the solvent valve 76 is opened and the circulation valve 82 is closed. As a result, the low surface tension solvent delivered from the storage tank 72 is supplied to the solvent supply path 97. As described above, while the low surface tension solvent is not supplied to the substrate W, the low surface tension solvent is circulated so that the DIW and IPA are stirred and the DIW and IPA are sufficiently mixed. be able to. Further, after the solvent valve 76 is opened, the low surface tension solvent that is adjusted to a predetermined temperature and from which foreign matters are removed can be quickly supplied to the solvent supply path 97.

  The upper ends of the gas supply path 98 and the outer gas supply path 99 are connected to the gas supply unit 18 (FIG. 2), respectively, and from the gas supply unit 18 to the gas supply path 98 and the outer side according to the operation command of the control unit 4. Nitrogen gas can be individually pumped to the gas supply path 99. Thus, nitrogen gas can be supplied to the gap space SP formed between the blocking member 9 (plate member 90) positioned at the opposing position and the substrate surface Wf.

  A receiving member 21 is fixedly attached around the casing 2. Cylindrical partition members 23a, 23b, and 23c are erected on the receiving member 21. A space between the outer wall of the casing 2 and the inner wall of the partition member 23a forms the first drainage tank 25a, and a space between the outer wall of the partition member 23a and the inner wall of the partition member 23b serves as the second drainage tank 25b. The space between the outer wall of the partition member 23b and the inner wall of the partition member 23c forms the third drainage tank 25c.

  The bottoms of the first drain tank 25a, the second drain tank 25b, and the third drain tank 25c are formed with outlets 27a, 27b, 27c, respectively, and each outlet is connected to a different drain. ing. For example, in this embodiment, the first drainage tank 25a is a tank for collecting used chemical liquid and communicated with a recovery drain for collecting and reusing the chemical liquid. The second drainage tank 25b is a tank for draining the used rinse liquid, and communicates with a waste drain for disposal processing. Further, the third drainage tank 25c is a tank for draining the used low surface tension solvent, and communicates with a waste drain for disposal processing.

  A splash guard 6 is provided above the drainage tanks 25a to 25c. The splash guard 6 is provided so as to be movable up and down with respect to the rotation axis J of the spin chuck 1 so as to surround the periphery of the substrate W held in a horizontal posture on the spin chuck 1. The splash guard 6 has a shape that is substantially rotationally symmetric with respect to the rotation axis J, and includes three guards 61, 62, and 63 that are concentrically arranged with the spin chuck 1 from the radially inner side toward the outer side. ing. The three guards 61, 62, 63 are provided so that the height decreases in order from the outermost guard 63 toward the innermost guard 61, and the upper ends of the guards 61, 62, 63 are in the vertical direction. It arrange | positions so that it may be settled in the surface extended to.

  The splash guard 6 is connected to the guard lifting mechanism 65 and operates the lifting drive actuator (for example, an air cylinder) of the guard lifting mechanism 65 in accordance with an operation command from the control unit 4, so that the splash guard 6 is spin chucked. 1 can be moved up and down. In this embodiment, the splash guard 6 is moved up and down stepwise by driving the guard lifting mechanism 65, whereby the processing liquid scattered from the rotating substrate W is separated into the first to third drain tanks 25a to 25c and drained. It is possible to make it.

  On the upper part of the guard 61, a groove-shaped first guide portion 61a that is inwardly opened in a cross-sectional shape is formed. Then, by placing the splash guard 6 at the highest position (hereinafter referred to as “first height position”) during the chemical treatment, the chemical liquid scattered from the rotating substrate W is received by the first guide portion 61a, and the first discharge is performed. It is guided to the liquid tank 25a. Specifically, the chemical liquid splashing from the rotating substrate W is arranged by arranging the splash guard 6 so that the first guide portion 61a surrounds the periphery of the substrate W held by the spin chuck 1 as the first height position. Is guided to the first drainage tank 25 a through the guard 61.

  In addition, an inclined portion 62 a that is inclined obliquely upward from the radially outer side to the inner side is formed on the upper portion of the guard 62. Then, the rinsing liquid splashed from the rotating substrate W is received by the inclined portion 62a by positioning the splash guard 6 at a position lower than the first height position (hereinafter referred to as “second height position”) during the rinsing process. And guided to the third drainage tank 25b. Specifically, as the second height position, the splash guard 6 is arranged so that the inclined portion 62a surrounds the periphery of the substrate W held by the spin chuck 1, so that the rinsing liquid scattered from the rotating substrate W can be obtained. It passes between the upper end of the guard 61 and the upper end of the guard 62 and is guided to the second drainage tank 25b.

  Similarly, on the upper part of the guard 63, an inclined portion 63a that is inclined obliquely upward from the radially outer side to the inner side is formed. Then, by placing the splash guard 6 at a position lower than the second height position (hereinafter referred to as “third height position”) during the replacement process, the low surface tension solvent scattered from the rotating substrate W is inclined to the inclined portion 63a. And is guided to the second drainage tank 25c. Specifically, as the third height position, the splash guard 6 is disposed so that the inclined portion 63a surrounds the periphery of the substrate W held by the spin chuck 1, so that the low surface tension scattered from the rotating substrate W is obtained. The solvent passes between the upper end portion of the guard 62 and the upper end portion of the guard 63 and is guided to the third drainage tank 25c.

  Further, the substrate transfer means (not shown) is not moved by causing the spin chuck 1 to protrude from the upper end of the splash guard 6 at a position lower than the third height position (hereinafter referred to as “retraction position”). It is possible to place the processed substrate W on the spin chuck 1 and receive the processed substrate W from the spin chuck 1.

  Next, the operation of the substrate processing apparatus configured as described above will be described in detail with reference to FIGS. FIG. 5 is a flowchart showing the operation of the substrate processing apparatus. FIG. 6 is a timing chart showing the operation of the substrate processing apparatus of FIG. FIG. 7 is a schematic diagram showing the operation of the substrate processing apparatus of FIG.

  In this apparatus, a control unit 4 functioning as a “control unit” of the present invention controls each part of the apparatus according to a program stored in a memory (not shown), and a series of processes shown in FIG. Apply. That is, the control unit 4 positions the splash guard 6 at the retracted position and causes the spin chuck 1 to protrude from the upper end portion of the splash guard 6. In this state, when an unprocessed substrate W is carried into the apparatus by the substrate transport means (not shown), the substrate W is treated with a chemical solution, a rinse process, a paddle formation process, a solvent supply process, and a stirring process. The cleaning process including the steps of the replacement process and the drying process is executed. A fine pattern made of, for example, poly-Si is formed on the substrate surface Wf. In this embodiment, the substrate W is carried into the apparatus with the substrate surface Wf facing upward and is held by the spin chuck 1 (step S101). The blocking member 9 is located at a position above the spin chuck 1 and prevents interference with the substrate W.

  After carrying in the substrate, the control unit 4 arranges the splash guard 6 at the first height position (position shown in FIG. 1) and executes the chemical treatment on the substrate W. That is, the chemical solution discharge nozzle 3 is moved to the discharge position, and the substrate W held by the spin chuck 1 is rotated at a predetermined rotation speed (for example, 800 rpm) determined within a range of 200 to 1200 rpm by driving the chuck rotation mechanism 13. (Step S102). Then, the chemical solution valve 31 is opened to supply hydrofluoric acid as a chemical solution from the chemical solution discharge nozzle 3 to the substrate surface Wf (HF supply). The hydrofluoric acid supplied to the substrate surface Wf is spread by centrifugal force, and the entire substrate surface Wf is treated with a chemical solution using hydrofluoric acid (step S103). The hydrofluoric acid shaken off from the substrate W is guided to the first drainage tank 25a and reused as appropriate.

  When the chemical processing is completed, the chemical discharge nozzle 3 is moved to the standby position. And the splash guard 6 is arrange | positioned in a 2nd height position, and the rinse process is performed with respect to the board | substrate W as "wet process" of this invention. That is, the rotation speed of the substrate W is set to the first speed, for example, 600 rpm (step S104), the rinse liquid valve 83 is opened, and the rinse liquid is discharged from the rinse liquid discharge port 96a of the blocking member 9 located at the separated position (step). S105; FIG. 7 (a); DIW supply). Simultaneously with the discharge of the rinsing liquid, the blocking member 9 is lowered toward the facing position and positioned at the facing position. As described above, the substrate surface Wf is kept wet by supplying the rinse liquid to the substrate surface Wf immediately after the chemical treatment. This is due to the following reason.

  That is, when hydrofluoric acid is shaken off from the substrate W after the chemical treatment, the substrate surface Wf begins to dry. As a result, the substrate surface Wf may be partially dried, and spots or the like may occur on the substrate surface Wf. Therefore, in order to prevent such partial drying of the substrate surface Wf, it is important to keep the substrate surface Wf wet. Further, nitrogen gas is discharged from the gas discharge port 98a and the outer gas discharge port 99a of the blocking member 9. Here, nitrogen gas is mainly discharged from the outer gas discharge port 99a. That is, the flow rate balance of the nitrogen gas discharged from both discharge ports is such that a relatively large flow rate of nitrogen gas is discharged from the outer gas discharge port 99a while the flow rate of the nitrogen gas discharged from the gas discharge port 98a is very small. Adjust.

  The rinse liquid supplied from the rinse liquid discharge port 96a to the substrate surface Wf is spread by the centrifugal force accompanying the rotation of the substrate W, and the entire substrate surface Wf is rinsed (wet processing step). That is, the hydrofluoric acid remaining on the substrate surface Wf is washed away by the rinse liquid corresponding to the treatment liquid of the present invention and removed from the substrate surface Wf. The used rinsing liquid shaken off from the substrate W is guided to the second drainage tank 25b and discarded. Further, the nitrogen gas is supplied to the gap space SP, so that the atmosphere around the substrate surface Wf is kept in a low oxygen concentration atmosphere. For this reason, the raise of the dissolved oxygen concentration of a rinse liquid can be suppressed.

  Further, when the above-described rinsing process and the processes described later (paddle formation process, solvent supply process, stirring process, replacement process, and drying process) are performed, the plate member 90 of the blocking member 9 is rotated in the same rotational direction as the substrate W. And rotate at substantially the same rotational speed. Thereby, it is possible to prevent a relative rotational speed difference from being generated between the lower surface 90a of the plate-like member 90 and the substrate surface Wf, and to suppress the occurrence of an entrained air current in the gap space SP. For this reason, it is possible to prevent the mist-like rinse liquid and the low surface tension solvent from entering the gap space SP and adhering to the substrate surface Wf. Further, by rotating the plate member 90, it is possible to shake off the rinsing liquid and the low surface tension solvent adhering to the lower surface 90a and prevent the rinsing liquid and the low surface tension solvent from staying on the lower surface 90a.

  When the rinsing process for a predetermined time is completed, a paddle forming process is executed next. That is, the control unit 4 decelerates the rotation speed of the substrate W to a second speed that is slower than the first speed (step S106). As a result, the rinsing liquid discharged from the rinsing liquid discharge port 96a is accumulated on the substrate surface Wf, and a DIW liquid film is formed in a paddle shape (paddle forming process). In this embodiment, the control unit 4 sets the second speed to 10 rpm, continues supplying the rinse liquid for 9 seconds, then closes the rinse liquid valve 83 and discharges the rinse liquid from the rinse liquid discharge port 96a. Stop (step S107). As a result, a DIW liquid film is formed as shown in FIG. Although the second speed is not limited to 10 rpm, the second speed is within a range that satisfies the condition that the centrifugal force acting on the rinsing liquid is smaller than the surface tension acting between the rinsing liquid and the substrate surface Wf. Two speeds need to be set. This is because the above conditions must be satisfied in order to form a rinse liquid film in a paddle shape.

  After the DIW supply is stopped, the control unit 4 raises the splash guard 6 to the third height after a predetermined time has elapsed until the film thickness T1 of the paddle-like DIW liquid film becomes substantially uniform over the entire surface of the substrate W. At the same time, the solvent valve 76 is opened to discharge the low surface tension solvent from the solvent discharge port 97a (solvent supply process). The flow rate of IPA is set to a low flow rate of about 100 (mL / min), for example. When the solvent valve 76 is opened and a predetermined time t1 elapses, the solvent valve 76 is once closed (step S108). As a result, as shown in FIG. 7C, at the center of the surface of the substrate W, the center of the DIW liquid film is replaced with IPA, and a replacement region SR is formed in the liquid film. The time t1 for opening the solvent valve 76 can be, for example, a time until the total amount of IPA supplied on the substrate W becomes approximately the same as the amount of DIW accumulated on the substrate surface Wf, but is not limited thereto. Is not to be done.

  After stopping the supply of IPA or almost simultaneously with the stop, the control unit 4 accelerates the rotation of the substrate and changes the rotation speed to a third speed higher than the second speed (step S109). The third speed is set to 40 rpm, for example. As a result, the liquid film on the substrate W greatly flows and the IPA spreads over the entire surface of the substrate W, and DIW and IPA are stirred and mixed on the substrate W (stir processing). As a result, as shown in FIG. 7D, the liquid film on the substrate surface Wf is a mixture of DIW and IPA. Further, due to the addition of IPA having a low surface tension and an increase in the rotational speed, the thickness of the DIW liquid film on the substrate W changes to a value T2 smaller than the initial film thickness T1.

  After performing the stirring process for rotating the substrate without supplying IPA in this way for a predetermined time t2, the control unit 4 opens the supply valve 76 and resumes IPA supply (step S110). The IPA flow rate at this time is not particularly limited, but the same flow rate as that in the solvent supply process (step S108) described above is preferable in that the device configuration and its control are simplified without requiring a change in the flow rate. Also, the duration t2 of the stirring process is such that the supply of IPA is resumed before the liquid film is interrupted due to the liquid flowing out from the substrate W due to the rotation and the substrate surface Wf is exposed. It is desirable to be set to. In the case of the present embodiment in which the rotation speed in the stirring process is 40 rpm, the time t2 of the stirring process can be set to about 5 to 10 seconds, for example, depending on the state of the substrate surface Wf.

  Even when the paddle-shaped liquid film is formed on the substrate W, the liquid on the substrate is gradually discharged by rotating the substrate W, so the replacement process is started after the DIW supply is stopped. It is preferable to shorten the time t3 until the time is as short as possible. For example, when the second speed is 10 rpm, this time t3 is preferably about 10 seconds.

  In the stirring process, it is the most important matter to rotate the substrate for a predetermined time without supplying IPA, and it is not essential to change the rotation speed from the paddle forming process. Therefore, as indicated by the dotted line in the timing chart of FIG. 6, during the execution of the stirring process, the same rotation speed (10 rpm) as that during the paddle formation process may be maintained. However, increasing the rotation speed as in the present embodiment is preferable in that the effect of stirring can be enhanced and the processing time can be shortened. In this case, it is more preferable that when the IPA is supplied to the DIW liquid film on the substrate W, the rotational speed is the same as in the paddle formation process, and the rotational speed is increased after the IPA supply. Increasing the rotation speed before supplying IPA increases the possibility that the liquid film is interrupted and the substrate surface Wf is partially exposed. However, by adding IPA in advance to reduce the surface tension of the liquid film, such problems are unlikely to occur. Because it becomes. Further, the rotation speed may be changed in multiple steps or continuously, or acceleration and deceleration may be alternately performed within a range where the paddle-like liquid film is not interrupted.

  When a predetermined time, for example, 3 seconds elapses from the restart of the IPA supply, the control unit 4 accelerates the rotation speed of the substrate W from 40 rpm to 300 rpm while continuing the IPA supply (step S111). Thereby, the entire surface of the substrate surface Wf is replaced with the low surface tension solvent (replacement process). In this embodiment, the rotational speed of the substrate W is accelerated in two steps (40 to 100 rpm, 100 to 300 rpm), so that even the DIW remaining in the back of the pattern formed on the substrate surface Wf is reliably replaced with IPA. The pattern collapse on the substrate surface Wf due to the residual DIW can be reliably prevented. The used IPA shaken off from the substrate W is guided to the third drain tank 25c and discarded.

  Thus, when the replacement process is completed, the control unit 4 stops the supply of IPA (step S112), increases the rotation speed of the chuck rotation mechanism 13, and rotates the substrate W at a high speed (for example, 1000 rpm) (step S113). Thereby, the IPA adhering to the substrate surface Wf is shaken off, and the drying process (spin drying) of the substrate W is executed (drying process). At this time, since the low surface tension solvent has entered the gaps between the patterns, it is possible to prevent pattern collapse and the occurrence of watermarks. Further, since the gap space SP is filled with nitrogen gas supplied from the gas discharge port 98a and the outer gas discharge port 99a, the drying time is shortened and the liquid component (low surface tension solvent) adhering to the substrate W is reduced. The generation of watermarks can be more effectively suppressed by reducing the elution of the oxidizable substances. When the drying process of the substrate W is completed, the control unit 4 controls the chuck rotating mechanism 13 to stop the rotation of the substrate W. Then, the splash guard 6 is positioned at the retracted position, and the spin chuck 1 is protruded from above the splash guard 6. Thereafter, the substrate transfer means carries the processed substrate W out of the apparatus (step S114), and a series of cleaning processes for one substrate W is completed.

  The operational effects of the series of processes described above will be described in more detail with reference to FIG. FIG. 8 is a schematic diagram showing a phenomenon on the substrate in the processing of this embodiment. When the substrate W to be processed has a fine pattern formed on its surface Wf, the fine pattern FP is displayed as shown in FIG. 8A when the rinse process and the paddle formation process are completed. The DIW, which is a rinsing liquid, has entered the gap between the two. Immediately after IPA is supplied to the substrate surface Wf in the subsequent solvent supply process, DIW and IPA do not mix immediately, so DIW remains in the gaps of the fine pattern FP as shown in FIG. May have. Even if the IPA supply is continued as it is, it is difficult to spread the IPA into the gaps of the fine pattern FP in a short time.

  Therefore, in this embodiment, after supplying a predetermined amount of IPA, a stirring process is performed in which the rotation of the substrate is continued for a certain time without the supply of IPA. By performing the stirring process, as shown in FIG. 8C, DIW remaining in the gaps of the pattern gradually dissolves into IPA. The purpose of the stirring process is to make IPA and DIW familiar with each other and perform the subsequent replacement process smoothly. Therefore, if a predetermined amount of IPA is supplied onto the substrate W in advance, it is meaningless to continue supplying IPA until IPA and DIW are sufficiently familiar with each other. There is a harmful effect of doing. In this embodiment, since the stirring process is performed in a state where the supply of IPA is stopped, such waste can be suppressed and the amount of IPA used can be reduced.

  In the subsequent replacement process, the DIW remaining on the substrate W is sufficiently dissolved in the IPA, and the rotational speed of the substrate is increased while further supplying IPA. For this reason, the IPA containing DIW is shaken off from the outer peripheral portion of the substrate, and finally the entire surface of the substrate surface Wf is covered with the IPA liquid film as shown in FIG.

  As described above, according to this embodiment, after rotating the substrate W and supplying DIW as the rinsing liquid to perform the rinsing process, the rotational speed is once reduced (10 rpm in this embodiment). A paddle-like liquid film is formed. Thereafter, the substrate is rotated in a state where a predetermined amount of IPA is added to the liquid film, thereby agitating and mixing DIW and IPA on the substrate W is promoted. By replacing the DIW on the substrate W with the IPA efficiently and reliably, and with a small amount of IPA used, the IPA is further supplied to the sufficiently stirred liquid film for replacement. it can.

  Further, by increasing the rotation speed in the stirring process, stirring can be further promoted and the entire processing time can be shortened. In this case, by adding IPA to the DIW liquid film on the substrate W and increasing the rotation speed, it is possible to prevent the liquid film from being interrupted and the substrate surface Wf from being exposed. Conversely, by adding IPA to the DIW liquid film in advance, the rotation speed can be increased without increasing the risk of the liquid film being interrupted.

  Further, by replacing the liquid film on the substrate W with IPA having a low surface tension more reliably and drying, it is possible to reliably prevent the occurrence of defects such as watermarks, spots, and pattern collapse due to residual DIW. .

  The present invention is not limited to the above-described embodiment, and various modifications other than those described above can be made without departing from the spirit of the present invention. For example, in the above embodiment, the rotation speed of the substrate is accelerated from the second speed (10 rpm) to the third speed (40 rpm) in the stirring process. However, as described above, changing the rotation speed of the substrate is the present invention. However, the stirring process may be performed while rotating at the second speed.

  In the above embodiment, the rotation speed of the substrate W is accelerated in two stages in the replacement process, but this is not essential in the present invention, and is accelerated in one stage or in three or more stages. Also good.

  Moreover, in the said embodiment, although IPA is used as a low surface tension solvent, the liquid mixture of IPA and DIW may be created in the cabinet part 70, and this may be used as a low surface tension solvent. Moreover, the production | generation method of a liquid mixture is not limited to this. For example, an organic solvent component such as IPA may be mixed in-line on a liquid supply path for supplying DIW toward the liquid supply path (or nozzle) of the blocking member to generate a mixed liquid. Further, the liquid mixture generating means such as the cabinet section is not limited to being provided in the substrate processing apparatus, and the liquid mixture generated in another apparatus provided separately from the substrate processing apparatus is provided in the substrate processing apparatus. It may be supplied to the substrate surface Wf via a blocking member. Further, a solvent essentially containing a surfactant may be used instead of the solvent containing an organic solvent component such as IPA.

  In the above embodiment, DIW is used as the rinse liquid. However, a liquid containing a component that does not have a chemical cleaning action on the substrate surface Wf such as carbonated water (DIW + CO2) may be used as the rinse liquid. Good. In this case, a mixture of a liquid (carbonated water) having the same composition as the rinse liquid adhering to the substrate surface Wf and an organic solvent component may be used as the mixed liquid. Further, while carbonated water is used as the rinse liquid, the mixed liquid may be a mixture of DIW, which is the main component of carbonated water, and an organic solvent component. Further, while DIW is used as the rinsing liquid, the mixed liquid may be a mixture of carbonated water and an organic solvent component. In short, a mixture of a liquid adhering to the substrate surface Wf, a liquid having the same main component, and an organic solvent component may be used as the mixed liquid. In addition to DIW and carbonated water, hydrogen water, dilute concentration (for example, about 1 ppm) ammonia water, dilute hydrochloric acid, and the like can be used as the rinse liquid.

  In the above embodiment, the present invention is applied to the process of rinsing and drying the substrate after the chemical treatment with hydrofluoric acid. However, the present invention is applied to the treatment of the substrate treated with another chemical solution. Also good. However, the process of forming a paddle-like liquid film with a rinsing liquid on the substrate and replacing it with a low surface tension solvent, as in this embodiment, and drying, especially after the hydrophobization treatment for hydrophobizing the surface of the substrate. This is effective when rinsing is performed using a rinsing liquid as a main component, and by applying the present invention to such treatment, a particularly remarkable effect can be obtained.

  The present invention relates to a semiconductor wafer, a glass substrate for photomask, a glass substrate for liquid crystal display, a glass substrate for plasma display, a substrate for FED (Field Emission Display), a substrate for optical disk, a substrate for magnetic disk, a substrate for magneto-optical disk, etc. The present invention can be applied to a substrate processing apparatus and a substrate processing method for performing a drying process on the entire surface of a substrate including the substrate.

It is a figure showing one embodiment of a substrate processing device concerning this invention. It is a block diagram which shows the main control structures of the substrate processing apparatus of FIG. It is a longitudinal cross-sectional view which shows the principal part of the interruption | blocking member with which the substrate processing apparatus of FIG. 1 was equipped. FIG. 4 is a cross-sectional view (cross-sectional view) taken along the line A-A ′ of FIG. 3. It is a flowchart which shows operation | movement of a substrate processing apparatus. 2 is a timing chart showing the operation of the substrate processing apparatus of FIG. 1. It is a schematic diagram which shows operation | movement of the substrate processing apparatus of FIG. It is a schematic diagram which shows the phenomenon on the board | substrate in the process of this embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Spin chuck 4 ... Control unit (control means)
7. Solvent supply unit (solvent supply means)
8. Rinsing liquid supply unit (processing liquid supply means)
13 ... Chuck rotating mechanism (substrate rotating means)
17 ... chuck pin (substrate holding means)
J: Rotating shaft SR ... Replacement area Wf ... Substrate surface W ... Substrate

Claims (8)

A wet processing step of performing wet processing on the substrate surface using a processing liquid while rotating the substrate in a substantially horizontal state at a first speed;
A paddle forming step of reducing the rotational speed of the substrate to a second speed and forming a liquid film of the processing liquid on the substrate in a paddle shape;
A solvent supplying step of stopping the supply of the low surface tension solvent after supplying a predetermined amount of a low surface tension solvent having a surface tension lower than that of the treatment liquid to the rotating liquid film on the substrate;
A stirring step of stirring the liquid on the substrate by rotating the substrate at a rotation speed higher than the rotation speed of the substrate in the solvent supply step without supplying the low surface tension solvent after the solvent supply step; ,
After the stirring step, replacing the liquid on the substrate with the low surface tension solvent by rotating the substrate while supplying the low surface tension solvent to the substrate surface;
A substrate processing method comprising: a drying step of removing the low surface tension solvent from the substrate surface and drying the substrate surface after the replacing step. 2. The substrate processing method according to claim 1, wherein when moving from the stirring step to the replacement step, the rotation speed of the substrate in the stirring step is maintained, and then the rotation speed of the substrate is increased. The substrate processing method according to claim 1, wherein in the stirring step, acceleration and deceleration of the rotation speed of the substrate are alternately performed. The stirring in the step, the substrate processing method according to any one of claims 1 to 3 to increase the rotational speed of the substrate than the second speed. The solvent feed step, the substrate processing method according to any one of claims 1 to 4 for rotating said substrate at said second speed. Before the substrate surface that was covered with the liquid film is exposed in the stirring step, the substrate processing method according to any one of claims 1 to 5 starts supplying the low surface tension solvent in the substitution step. Before the wet processing step, including a hydrophobization treatment step of hydrophobizing the substrate surface,
The wet in the processing step, the substrate processing method according to any one of claims 1 to 6 performs the rinsing process for rinsing the substrate surface by rinsing liquid as the treatment liquid composed mainly of water. Substrate holding means for holding the substrate in a substantially horizontal posture;
Substrate rotating means for rotating the substrate held by the substrate holding means around a predetermined rotation axis;
Treatment liquid supply means for supplying a treatment liquid for subjecting the substrate to a wet process on the surface of the substrate held by the substrate holding means;
A solvent supply means for supplying a low surface tension solvent having a surface tension lower than that of the processing liquid to the center of the surface of the substrate after the wet processing;
Control means for controlling the supply of the low surface tension solvent to the substrate surface by the solvent supply means,
The substrate rotating means forms a liquid film of the processing liquid on the substrate in a paddle shape by reducing the rotation speed of the substrate after the wet processing than that during the wet processing,
The control means stops supplying the low surface tension solvent after supplying a predetermined amount of the low surface tension solvent to the liquid film of the processing liquid on the rotating substrate, and after the elapse of a predetermined time, Resuming the supply and replacing the liquid on the substrate with the low surface tension solvent ;
When the supply of the low surface tension solvent is stopped, the substrate rotating means increases the rotation speed of the substrate and stirs the liquid on the substrate until the supply of the low surface tension solvent is resumed. > A substrate processing apparatus characterized by that.

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