JP2009218377A - Substrate processing device and substrate processing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing device and a substrate processing method that use a low-surface-tension solvent such as IPA to dry a substrate surface getting wet with a processing liquid while disposing a blocking member opposite the substrate surface, the substrate processing device and the substrate processing method excellently drying the substrate surface. <P>SOLUTION: An annular lower gas supply path 99b extends downward in a skirt shape from a lower end of an upper gas supply path 99a. The blocking member 9 is provided with both gas supply paths 99a and 99b so that an interval r2 between an opening portion 90b and a distal end member 95b is larger than an interval r1 between a rotary support shaft 91 and an upper end of an internal insert shaft 95. Consequently, when a nitrogen gas is pumped to the upper gas supply path 99a, the nitrogen gas is discharged downward and outward from a gas discharge port 99c formed at a lower end of the lower gas supply path 99b while spread downward and outward by the lower gas supply path 99b, so that the nitrogen gas is supplied to a gap space SP while reduced in speed. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for supplying a processing liquid to a substrate surface, subjecting the substrate surface to a predetermined wet process, and then drying the substrate surface wet with the processing liquid. Substrates to be dried include semiconductor wafers, photomask glass substrates, liquid crystal display glass substrates, plasma display glass substrates, FED (Field Emission Display) substrates, optical disk substrates, and magnetic substrates. A disk substrate, a magneto-optical disk substrate, and the like are included.

  In the manufacturing process of electronic components such as semiconductor devices and liquid crystal display devices, a chemical treatment with a chemical solution and a rinse treatment with a rinse solution such as pure water are performed, followed by a drying treatment to remove the rinse solution adhering to the substrate surface. Executed. For example, the apparatus described in Patent Literature 1 rotates a spin chuck that holds a substrate in a horizontal posture, a motor that rotates the spin chuck, an atmosphere blocking member that is provided to face the spin chuck, and an atmosphere blocking member. A motor and a cup surrounding the periphery of the substrate held by the spin chuck are provided, and chemical treatment, rinsing treatment, and drying treatment are performed as follows. In this apparatus, when an unprocessed substrate is transferred to and held by the spin chuck by the transfer robot, the atmosphere blocking member closes the spin chuck and covers the substrate surface from above, and the cup covers the spin chuck and the atmosphere blocking member. Located to surround the surroundings. Thereafter, the substrate is subjected to a chemical treatment with a chemical and a rinse treatment with pure water while rotating the spin chuck and the atmosphere blocking member. Then, after the rinsing process with pure water is completed, the substrate is kept rotating as it is, and water droplets adhering to the substrate are shaken off by a centrifugal force (drying process). Further, in this apparatus, an inert gas such as nitrogen gas or dry air (low dew point air) is supplied between the substrate and the atmosphere blocking member in a state where the substrate surface is covered with the atmosphere blocking member, and the inert gas atmosphere or low Since the drying process is performed in an atmosphere suitable for substrate drying such as a humidity atmosphere, it is possible to suppress the generation of the watermark and perform the substrate process satisfactorily.

JP 2004-146784 A (FIG. 1)

  By the way, in the above-mentioned conventional apparatus, spin drying is immediately performed after rinsing, but recently, in order to more effectively suppress the generation of watermarks, for example, IPA (isopropyl alcohol: lower in surface tension than pure water). It has been proposed to perform a substitution treatment using isopropyl alcohol) solution before the spin drying. This replacement process is a process of supplying an IPA liquid to the substrate surface after the rinsing process to form a liquid film of the IPA liquid and replacing the pure water with the IPA liquid on the substrate surface. Then, after the replacement process, the substrate surface can be dried by rotating the substrate at a high speed to remove the IPA liquid from the substrate surface.

  However, since the IPA liquid has a lower surface tension with respect to the substrate surface than pure water, as in the invention described in Patent Document 1, when an inert gas or dry air is discharged between the substrate and the atmosphere blocking member, Such a problem sometimes occurred. That is, in order to make the gap space between the substrate and the atmosphere blocking member an atmosphere suitable for drying the substrate, it is necessary to ensure a sufficient flow rate of gas (inert gas, dry air, etc.) supplied to the gap space. is there. Therefore, when the gas flow rate is increased in the invention described in Patent Document 1, the flow rate of the gas discharged from the gas discharge port toward the substrate surface is increased. As a result, in the portion of the liquid film of the IPA liquid that is directly exposed to the gas, the IPA liquid evaporates and a part of the substrate surface is exposed, so that droplets remain easily. On the other hand, when the gas flow rate is suppressed, an atmosphere suitable for drying the substrate is not formed, and poor drying tends to occur. As described above, in the apparatus that executes the substitution process using the low surface tension solvent such as the IPA liquid before the drying process in a state where the substrate surface is covered with the blocking member, in order to dry the substrate surface well, It is very important to suppress the flow rate of the gas striking the substrate surface while sufficiently securing the flow rate of the gas supplied to the space.

  The present invention has been made in view of the above problems, and a substrate processing apparatus for drying a substrate surface wetted with a processing liquid using a low surface tension solvent such as an IPA liquid while disposing a blocking member facing the substrate surface, and An object of the substrate processing method is to dry the substrate surface satisfactorily.

  In the present invention, after supplying a treatment liquid to the substrate surface and subjecting the substrate surface to a predetermined wet treatment, a low surface tension solvent having a surface tension lower than that of the treatment liquid is supplied to the substrate surface and A substrate processing apparatus for drying a substrate surface by removing a surface tension solvent from the substrate surface, in order to achieve the above object, a substrate holding means for holding the substrate in a substantially horizontal posture with the substrate surface facing upward, Substrate rotating means for rotating the substrate held by the substrate holding means, a blocking member spaced upward from the surface of the substrate held by the substrate holding means, and a gap formed between the blocking member and the substrate surface A gas supply means for supplying a gas to the space, and the blocking member has a plate-like member having a substrate facing surface facing the substrate surface and having an opening corresponding to the central portion of the substrate surface, and a hollow portion With A gas supply means comprising: a support shaft integrally or separately from the plate-like member and extending upward from the plate-like member and having a hollow portion connected to the opening portion; and an insertion shaft inserted through the hollow portion and the opening portion. The gas is fed into an annular upper gas supply passage formed by the upper end portion of the support shaft and the insertion shaft, and the annular lower gas supply passage formed by the opening portion and the lower end portion of the insertion shaft is the upper gas supply passage. In addition, the gas is discharged from the annular gas discharge port formed in the lower end portion of the lower gas supply path into the gap space.

  In order to achieve the above object, the substrate processing method according to the present invention supplies a processing solution to the substrate surface while rotating the substrate held in a substantially horizontal posture with the substrate surface facing upward upward about a predetermined rotation axis. And a wet processing step for performing a predetermined wet process on the substrate surface, and the blocking member is spaced apart from the substrate surface at a position above the substrate surface with the substrate facing surface of the blocking member facing the substrate surface. By supplying a low surface tension solvent having a low surface tension to the substrate surface, the treatment liquid adhering to the substrate surface is replaced with the low surface tension solvent, and after the replacement step, the low surface tension solvent is removed from the substrate surface. A drying process for drying the substrate surface, and in the replacement process, by discharging gas downward and outward from an annular gas discharge port formed on the substrate facing surface so as to surround the rotation axis. It is characterized by supplying gas to the gap space.

  In the invention thus configured (substrate processing apparatus and method), the low surface tension solvent is supplied to the substrate surface in a state where the blocking member faces the substrate surface and is spaced apart upward from the substrate surface before the drying process. Then, the treatment liquid adhering to the substrate surface is replaced with a low surface tension solvent (substitution treatment). Further, before the drying process, gas is supplied as follows to the gap space formed between the substrate surface on which the liquid film of the low surface tension solvent is formed by the replacement process and the blocking member. The blocking member is formed with an annular gas discharge port for discharging gas toward the substrate surface. Then, the gas is discharged downward and outward from the gas discharge port, and the gas is supplied to the gap space. Therefore, the gas is supplied to the gap space while spreading in a ring shape, and the flow rate of the gas can be reduced while ensuring a sufficient gas flow rate. Moreover, since the gas spreads on the liquid film on the substrate surface as described above and strikes obliquely, the vertical velocity component of the gas is decelerated and partial drying of the liquid film is effectively prevented.

  Here, in order to reduce the gas flow velocity while ensuring a sufficient gas flow rate, the gas discharge rate is smaller than the gas flow cross-sectional area in the gas discharge port, that is, the upper gas supply channel. It is preferable to increase the area of the outlet. For example, in the substrate processing apparatus, the distance r2 between the outer wall surface of the lower end portion of the insertion shaft and the inner wall surface of the opening portion is larger than the distance r1 between the outer wall surface of the upper end portion of the insertion shaft and the inner wall surface of the support shaft. Or the inner wall surface of the lower end portion of the insertion shaft and the inner wall surface of the opening are both inclined downward and outward, and the inclination angle θ2 of the inner wall surface with respect to the horizontal plane is smaller than the inclination angle θ1 of the outer wall surface. can do. By adopting these configurations, the flow velocity of the gas discharged from the annular gas discharge port can be effectively reduced.

  In addition, a central discharge port is formed at the lower end of the insertion shaft, and a central gas supply path for guiding the gas from the gas supply means to the central discharge port is formed inside the insertion shaft. You may comprise so that it may discharge to a clearance space. By discharging gas from the central discharge port in addition to the annular gas discharge port in this way, the gas can be reliably supplied to the central portion of the substrate surface, and the gas can be uniformly supplied to the entire gap space. it can.

  Further, the gap space can be made an inert gas atmosphere by supplying the inert gas as a gas. Further, the gap space can be made into a low humidity atmosphere by supplying low dew point air as a gas. As described above, since the gap space can be adjusted to an atmosphere suitable for substrate drying, the generation of watermarks can be further effectively suppressed.

  Examples of the “low surface tension solvent” used in the present invention include alcohol-based organic solvents, HFE (hydrofluoroether), acetone (acetone), and Trans-1,2-dichloroethylene (trans1,2-dichloroethylene). Can be used. As the alcohol organic solvent, isopropyl alcohol, ethyl alcohol, or methyl alcohol can be used from the viewpoint of safety, cost, etc., and isopropyl alcohol (IPA) is particularly preferable. Further, the low surface tension solvent is not limited to a single component but may be a liquid mixed with other components. For example, a mixed solution of IPA and pure water or a mixed solution of IPA and HFE may be used.

  Low dew point air means air that has been conditioned and temperature adjusted to be compatible with the process of manufacturing electronic components such as semiconductor devices and liquid crystal display devices. For example, the relative humidity is 10.5% (dew point temperature). Is air dehumidified to about −10 ° C. or less.

  According to this invention, the gas is supplied to the gap space by discharging the gas downward and outward from the annular gas discharge port to the gap space formed between the substrate surface and the blocking member. For this reason, while the gas spreads in an annular shape with respect to the liquid film of the low surface tension solvent, it strikes diagonally, and the gas flow rate can be lowered while ensuring a sufficient gas flow rate. As a result, it is possible to reliably form an atmosphere suitable for substrate drying by supplying sufficient gas to the gap space while preventing the occurrence of poor drying due to gas supply.

  FIG. 1 is a view showing an embodiment of a substrate processing apparatus according to the present invention. FIG. 2 is a block diagram showing a main control configuration of the substrate processing apparatus of FIG. This substrate processing apparatus is a single-wafer type substrate processing apparatus used for a cleaning process for removing unnecessary substances adhering to the surface Wf of a substrate W such as a semiconductor wafer. More specifically, the substrate surface Wf was wetted with a rinsing liquid after being subjected to a chemical liquid treatment with a chemical liquid such as hydrofluoric acid and a rinsing liquid such as pure water or DIW (deionized water). This is a device for drying the substrate surface Wf. In this embodiment, the substrate surface Wf refers to a pattern formation surface on which a device pattern made of poly-Si or the like is formed.

  The substrate processing apparatus includes a spin chuck 1 that rotates while holding the substrate W in a substantially horizontal posture with the substrate surface Wf facing upward, and a chemical solution toward the surface Wf of the substrate W held by the spin chuck 1. A chemical solution discharge nozzle 3 for discharging, and a blocking member 9 arranged at a position above the spin chuck 1 are provided.

  The spin chuck 1 has a rotation support shaft 11 connected to a rotation shaft of a chuck rotation mechanism 13 including a motor, and can rotate about a rotation axis J (vertical axis) by driving the chuck rotation mechanism 13. The rotating support shaft 11 and the chuck rotating mechanism 13 are accommodated in a cylindrical casing 2. A disc-shaped spin base 15 is integrally connected to the upper end portion of the rotation spindle 11 by a fastening component such as a screw. Therefore, the spin base 15 rotates around the rotation axis J by driving the chuck rotation mechanism 13 in accordance with an operation command from the control unit 4 that controls the entire apparatus. Thus, in this embodiment, the chuck rotating mechanism 13 functions as the “substrate rotating means” of the present invention.

  Near the peripheral edge of the spin base 15, a plurality of chuck pins 17 for holding the peripheral edge of the substrate W are provided upright. Three or more chuck pins 17 may be provided to securely hold the circular substrate W, and are arranged at equiangular intervals along the peripheral edge of the spin base 15. Each of the chuck pins 17 includes a substrate support portion that supports the peripheral portion of the substrate W from below, and a substrate holding portion that holds the substrate W by pressing the outer peripheral end surface of the substrate W supported by the substrate support portion. Yes. Each chuck pin 17 is configured to be switchable between a pressing state in which the substrate holding portion presses the outer peripheral end surface of the substrate W and a released state in which the substrate holding portion is separated from the outer peripheral end surface of the substrate W.

  When the substrate W is delivered to the spin base 15, the plurality of chuck pins 17 are released, and when the substrate W is cleaned, the plurality of chuck pins 17 are pressed. To do. By setting the pressed state, the plurality of chuck pins 17 can grip the peripheral edge of the substrate W and hold the substrate W in a substantially horizontal posture at a predetermined interval from the spin base 15. As a result, the substrate W is supported with its front surface (pattern forming surface) Wf facing upward and the back surface Wb facing downward. Thus, in this embodiment, the chuck pin 17 functions as the “substrate holding means” of the present invention. The substrate holding means is not limited to the chuck pins 17, and a vacuum chuck that supports the substrate W by sucking the substrate back surface Wb may be used.

  The chemical liquid discharge nozzle 3 is connected to a chemical liquid supply source via a chemical valve 31. For this reason, when the chemical liquid valve 31 is opened and closed based on the control command from the control unit 4, the chemical liquid is pumped from the chemical liquid supply source toward the chemical liquid discharge nozzle 3, and the chemical liquid is discharged from the chemical liquid discharge nozzle 3. In addition, hydrofluoric acid or BHF (Buffered Hydrofluoric acid) etc. are used for a chemical | medical solution. Further, a nozzle moving mechanism 33 (FIG. 2) is connected to the chemical liquid discharge nozzle 3, and the chemical liquid discharge nozzle 3 is moved to the substrate W by driving the nozzle moving mechanism 33 in accordance with an operation command from the control unit 4. Can be reciprocated between the discharge position above the rotation center and the standby position retracted to the side from the discharge position.

  The blocking member 9 includes a donut-like plate-like member 90 having an opening at the center, a hollow support 91 that supports the plate-like member 90, and a hollow portion of the rotary support 91. And an insertion shaft 95 inserted through the opening of the plate-like member 90. The plate member 90 is disposed so as to face the surface Wf of the substrate W held by the spin chuck 1. The plate-like member 90 has a lower surface (bottom surface) 90 a that is a substrate facing surface that faces the substrate surface Wf substantially in parallel, and the planar size of the plate member 90 is equal to or larger than the diameter of the substrate W. The plate-like member 90 is attached substantially horizontally to the lower end portion of the rotation support shaft 91 having a substantially cylindrical shape, and the rotation support shaft 91 is rotatable about a rotation axis J passing through the center of the substrate W by an arm 92 extending in the horizontal direction. Is retained. A bearing (not shown) is interposed between the outer peripheral surface of the insertion shaft 95 and the inner peripheral surface of the rotation support shaft 91. A blocking member rotating mechanism 93 and a blocking member lifting mechanism 94 are connected to the arm 92.

  The blocking member rotation mechanism 93 rotates the rotation support shaft 91 around the rotation axis J in response to an operation command from the control unit 4. When the rotation support shaft 91 is rotated, the plate member 90 rotates integrally with the rotation support shaft 91. The blocking member rotating mechanism 93 is configured to rotate the plate-like member 90 (lower surface 90a) in the same rotational direction as the substrate W and at substantially the same rotational speed in accordance with the rotation of the substrate W held by the spin chuck 1. Yes.

  Further, the blocking member elevating mechanism 94 can make the blocking member 9 close to and opposite to the spin base 15 according to an operation command from the control unit 4, or can be separated from the spin base 15. Specifically, the control unit 4 operates the blocking member elevating mechanism 94 to raise the blocking member 9 to a separation position above the spin chuck 1 when the substrate processing apparatus carries the substrate W in and out. Let On the other hand, when a predetermined process is performed on the substrate W, the substrate W is cut off to a predetermined facing position (position shown in FIG. 1) set very close to the surface Wf of the substrate W held by the spin chuck 1. The member 9 is lowered. In this embodiment, after the rinsing process is started, the blocking member 9 is lowered from the separated position to the facing position, and is continuously positioned until the drying process is completed.

  FIG. 3 is a longitudinal sectional view showing the main part of the blocking member provided in the substrate processing apparatus of FIG. 4 is a diagram showing the configuration of the blocking member and the relationship between the gas supply path and the gas supply region. FIG. 4 (a) is a cross-sectional view (cross-sectional view) taken along the line AA ′ of FIG. FIG. 2B is a view of the discharge surface from the substrate surface, and FIG. 2C shows the supply range of the gas discharged from the annular gas discharge port to the substrate surface. In the blocking member 9 according to this embodiment, the opening 90b is formed at the center of the plate-like member 90 as described above. In this opening 90b, a truncated cone-shaped recess is formed, and the inner wall surface 90b1 of the opening 90b is an inclined surface that is inclined downward and outward from the central axis of the recess (which coincides with the rotation axis J). .

  Further, the rotation support shaft 91 extends upward from the center of the upper surface of the plate-like member 90 so that the opening 90 b is connected to the hollow portion 91 a of the rotation support shaft 91. In this embodiment, the rotation support shaft 91 is provided integrally with the plate-like member 90. However, the plate-like member 90 and the rotation support shaft 91 are provided separately, and both are integrated by a fastening member. May be.

  The insertion shaft 95 is inserted through the hollow portion 91a and the opening 90b that are connected to each other in this manner. In this embodiment, as shown in FIG. 3, the insertion shaft 95 has a cylindrical shaft body 95a and a tip member 95b having a hollow truncated cone shape, and the lower end of the shaft body 95a is the tip. Both members are integrated by being inserted into the hollow portion of the member 95b. The shaft body portion of the shaft body 95a above the tip member 95b is fed into the hollow portion 91a of the rotation support shaft 91 from the opening 90b, and the tip member 95b is inserted into the opening 90b and above the tip member 95b. The shaft body 95a is inserted into the hollow portion 91a. Here, the shaft body 95a and the tip member 95b are individually formed and integrated with each other, but it goes without saying that the shaft body 95a and the tip member 95b may be integrally formed.

  In this embodiment, the outer wall surface 95b1 of the tip member 95b is inclined at the same inclination angle as the inner wall surface 90b1 of the opening 90b, and both are arranged so as to be separated by a constant interval r2 over the entire circumference. In addition, both the rotation support shaft 91 and the upper end portion of the insertion shaft 95 (the upper end side of the shaft body 95a) are evenly spaced over the entire circumference. For this reason, the gaps between the insertion shaft 95 (non-rotating side member) and the rotating side members (rotating support shaft 91 and plate-like member 90) are uniform over the entire circumference, and the seal gas is introduced into the gap. A gap between the insertion shaft 95 and the plate-like member 90 and the rotation support shaft 91 is sealed from the outside.

  At the upper end side of the insertion shaft 95, the rotation support shaft 91 and the upper end portion of the insertion shaft 95 (the upper end side of the shaft body 95a) are uniformly spaced over the entire circumference by the interval r1, and the annular upper gas supply path 99a is formed. On the other hand, at the lower end side of the insertion shaft 95, the opening 90b and the lower end portion (hollow frustoconical tip member 95b) of the insertion shaft 95 are uniformly spaced over the entire circumference by the interval r2, A lower gas supply path 99b is formed. These two gas supply paths 99a and 99b are connected to each other, and the upper gas supply path 99a extends straight in the vertical direction, whereas the lower gas supply path 99b extends downward from the lower end of the upper gas supply path 99a. In the direction, it extends in a skirt shape or a trumpet shape. Moreover, in this embodiment, the blocking member 9 is configured so that the interval r2 is larger than the interval r1. Therefore, as will be described later, when nitrogen gas is pumped to the upper gas supply path 99a, the nitrogen gas is sent to the lower gas supply path 99b via the upper gas supply path 99a, and further downward in the lower gas supply path 99b. While being spread outward, the gas is discharged outwardly downward from a gas discharge port 99c opened at the lower end of the lower gas supply path 99b. As a result, as shown in FIG. 4C, the nitrogen gas is supplied toward the concentric gas supply region 100 that is centered on the rotation center W0 of the substrate surface Wf and extends outward from the opening 90b.

  On the other hand, three fluid supply paths are formed in the insertion shaft 95 so as to extend in the vertical axis direction. That is, a rinse liquid supply path 96 serving as a rinse liquid path, an IPA liquid supply path 97 serving as an IPA liquid path, and a central gas supply path 98 serving as a nitrogen gas path are formed in the insertion shaft 95. The rinse liquid supply path 96, the IPA liquid supply path 97, and the central gas supply path 98 are respectively inserted into an insertion shaft 95 made of PTFE (polytetrafluoroethylene) on a tube 96b made of PFA (perfluoroalkyl vinyl ether copolymer). 97b, 98b are inserted in the axial direction.

  The lower ends of the rinse liquid supply path 96, the IPA liquid supply path 97, and the central gas supply path 98 are respectively connected to the rinse liquid discharge port 96a, the IPA liquid discharge port 97a, and the central gas discharge port (the “central discharge port” of the present invention). Equivalent) 98a, which faces the surface Wf of the substrate W held on the spin chuck 1. In this embodiment, the diameter of the shaft body 95a of the insertion shaft 95 is 18 to 20 mm. Moreover, the diameters of the rinse liquid discharge port 96a, the IPA liquid discharge port 97a, and the central gas discharge port 98a are formed to 4 mm, 2 to 3 mm, and 4 mm, respectively. Thus, in this embodiment, the diameter of the IPA liquid discharge port 97a is smaller than the diameter of the rinse liquid discharge port 96a. Thereby, the trouble shown below can be prevented. That is, the IPA liquid has a lower surface tension than the rinse liquid (DIW). For this reason, when the IPA liquid is discharged from the IPA liquid discharge port having the same diameter as that for discharging the rinse liquid, the IPA liquid may fall from the IPA liquid discharge port after the discharge of the IPA liquid is stopped. is there. On the other hand, when the rinse liquid is discharged from the rinse liquid discharge port having the same diameter as that for discharging the IPA liquid, the discharge speed of the rinse liquid is increased. As a result, the rinsing liquid (DIW), which is an electrical insulator, may collide with the substrate surface Wf at a relatively high speed, and the supply portion of the substrate surface Wf to which the rinsing liquid is directly supplied may be charged and oxidized. is there. On the other hand, in this embodiment, the discharge ports for the IPA liquid and the rinse liquid are provided separately, and the diameter of the IPA liquid discharge port 97a is formed smaller than the diameter of the rinse liquid discharge port 96a. Therefore, it is possible to prevent the IPA liquid from dropping from the IPA liquid discharge port, to suppress an increase in the discharge speed of the rinse liquid from the rinse liquid discharge port, and to suppress oxidation due to charging of the substrate surface Wf. .

  In this embodiment, the rinse liquid discharge port 96a is provided at a position shifted radially outward from the central axis of the blocking member 9, that is, the rotation axis J of the substrate W. Thereby, it is avoided that the rinse liquid discharged from the rinse liquid discharge port 96a is concentratedly supplied to one point (the rotation center W0 of the substrate W) of the substrate surface Wf. As a result, charged portions on the substrate surface Wf can be dispersed, and oxidation due to charging of the substrate W can be reduced. On the other hand, if the rinse liquid discharge port 96a is too far from the rotation axis J, it is difficult to make the rinse liquid reach the rotation center W0 on the substrate surface Wf. Therefore, in this embodiment, the distance L from the rotation axis J in the horizontal direction to the rinse liquid discharge port 96a (discharge port center) is set to about 4 mm. Here, the upper limit of the distance L at which the rinse liquid (DIW) can be supplied to the rotation center W0 on the substrate surface Wf is 20 mm under the following conditions.

Flow rate of DIW: 2L / min
Substrate rotation speed: 1500rpm
The state of the substrate surface: the center of the surface is a hydrophobic surface. Also, the upper limit of the distance from the rotation axis J to the IPA liquid discharge port 97a (discharge port center) is as long as the rotation speed of the substrate is set to 1500 rpm. This is basically the same as the upper limit (20 mm) of the distance L from J to the rinse liquid discharge port 96a (discharge port center).

  On the other hand, with respect to the distance from the rotation axis J to the central gas discharge port 98a (discharge port center), a gap formed between the blocking member 9 (plate member 90) positioned at the opposing position and the substrate surface Wf. As long as nitrogen gas can be supplied to the space SP, it is not particularly limited and is arbitrary. However, from the viewpoint of blowing nitrogen gas to the solvent layer formed by the IPA liquid formed on the substrate surface Wf as described later and discharging the solvent layer from the substrate W, the central gas discharge port 98a is located on the rotation axis J. Or it is preferable to provide in the vicinity position.

  Returning to FIG. 1, the description will be continued. An upper end portion of the rinsing liquid supply path 96 is connected to a DIW supply source constituted by a factory utility or the like via a rinsing liquid valve 83. When the rinsing liquid valve 83 is opened, the DIW is discharged from the rinsing liquid discharge port 96a. Can be discharged as a rinsing liquid.

  The upper end portion of the IPA liquid supply path 97 is connected to the IPA liquid supply unit 7. The IPA liquid supply unit 7 has a tank (not shown) for storing the IPA liquid, and can operate in response to an operation command from the control unit 4 to pressure-feed the IPA liquid in the tank to the IPA liquid supply path 97. It has become.

  The upper ends of the central gas supply path 98 and the upper gas supply path 99a are connected to a nitrogen gas supply source (not shown) constituted by factory utilities and the like via nitrogen valves 84 and 85, respectively. When the nitrogen valve 84 is opened, nitrogen gas can be discharged from the central gas discharge port 98a to the center of the substrate surface Wf. When the nitrogen valve 85 is opened, the upper gas supply path 99a and the lower gas supply path Nitrogen gas is sent to the gas discharge port 99c via 99b and can be discharged downward and outward from the gas discharge port 99c. That is, nitrogen gas can be individually pumped from the nitrogen gas supply source to the central gas supply path 98 and the annular gas supply path (upper gas supply path 99a + lower gas supply path 99b) according to the operation command of the control unit 4. Thus, nitrogen gas can be supplied to the gap space SP formed between the blocking member 9 (plate member 90) positioned at the opposing position and the substrate surface Wf. In this embodiment, a pipe connecting the nitrogen gas supply source and the upper gas supply path 99a and the nitrogen valve 85 inserted in the pipe function as the “gas supply means” of the present invention. A nitrogen gas supply unit to be stored may be provided in the apparatus, and nitrogen gas may be supplied from the nitrogen supply unit in accordance with an operation command of the control unit 4.

  A receiving member 21 is fixedly attached around the casing 2. Cylindrical partition members 23a, 23b, and 23c are erected on the receiving member 21. A space between the outer wall of the casing 2 and the inner wall of the partition member 23a forms the first drainage tank 25a, and a space between the outer wall of the partition member 23a and the inner wall of the partition member 23b serves as the second drainage tank 25b. The space between the outer wall of the partition member 23b and the inner wall of the partition member 23c forms the third drainage tank 25c.

  The bottoms of the first drain tank 25a, the second drain tank 25b, and the third drain tank 25c are formed with outlets 27a, 27b, 27c, respectively, and each outlet is connected to a different drain. ing. For example, in this embodiment, the first drainage tank 25a is a tank for collecting used chemical liquid and communicated with a recovery drain for collecting and reusing the chemical liquid. The second drainage tank 25b is a tank for draining the used rinse liquid, and communicates with a waste drain for disposal processing. Further, the third drainage tank 25c is a tank for draining the used IPA liquid, and communicates with a waste drain for disposal processing.

  A splash guard 6 is provided above the drainage tanks 25a to 25c. The splash guard 6 is provided so as to be movable up and down with respect to the rotation axis J of the spin chuck 1 so as to surround the periphery of the substrate W held in a horizontal posture on the spin chuck 1. The splash guard 6 has a shape that is substantially rotationally symmetric with respect to the rotation axis J, and includes three guards 61, 62, and 63 that are concentrically arranged with the spin chuck 1 from the radially inner side toward the outer side. ing. The three guards 61, 62, 63 are provided so that the height decreases in order from the outermost guard 63 toward the innermost guard 61, and the upper ends of the guards 61, 62, 63 are in the vertical direction. It arrange | positions so that it may be settled in the surface extended to.

  The splash guard 6 is connected to the guard lifting mechanism 65 and operates the lifting drive actuator (for example, an air cylinder) of the guard lifting mechanism 65 in accordance with an operation command from the control unit 4, so that the splash guard 6 is spin chucked. 1 can be moved up and down. In this embodiment, the splash guard 6 is moved up and down stepwise by driving the guard lifting mechanism 65, whereby the processing liquid scattered from the rotating substrate W is separated into the first to third drain tanks 25a to 25c and drained. It is possible to make it.

  On the upper part of the guard 61, a groove-shaped first guide portion 61a that is inwardly opened in a cross-sectional shape is formed. Then, by placing the splash guard 6 at the highest position (hereinafter referred to as “first height position”) during the chemical treatment, the chemical liquid scattered from the rotating substrate W is received by the first guide portion 61a, and the first discharge is performed. It is guided to the liquid tank 25a. Specifically, the chemical liquid splashing from the rotating substrate W is arranged by arranging the splash guard 6 so that the first guide portion 61a surrounds the periphery of the substrate W held by the spin chuck 1 as the first height position. Is guided to the first drainage tank 25 a through the guard 61.

  In addition, an inclined portion 62 a that is inclined obliquely upward from the radially outer side to the inner side is formed on the upper portion of the guard 62. Then, the rinsing liquid splashed from the rotating substrate W is received by the inclined portion 62a by positioning the splash guard 6 at a position lower than the first height position (hereinafter referred to as “second height position”) during the rinsing process. And guided to the second drainage tank 25b. Specifically, as the second height position, the splash guard 6 is arranged so that the inclined portion 62a surrounds the periphery of the substrate W held by the spin chuck 1, so that the rinsing liquid scattered from the rotating substrate W can be obtained. It passes between the upper end of the guard 61 and the upper end of the guard 62 and is guided to the second drainage tank 25b.

  Similarly, on the upper part of the guard 63, an inclined portion 63a that is inclined obliquely upward from the radially outer side to the inner side is formed. Then, the IPA liquid scattered from the rotating substrate W is received by the inclined portion 63a by positioning the splash guard 6 at a position lower than the second height position (hereinafter referred to as “third height position”) during the replacement process. And guided to the second drainage tank 25c. Specifically, as the third height position, the splash guard 6 is disposed so that the inclined portion 63a surrounds the periphery of the substrate W held by the spin chuck 1, so that the IPA liquid scattered from the rotating substrate W can be reduced. It passes between the upper end of the guard 62 and the upper end of the guard 63 and is guided to the third drainage tank 25c.

  Further, the substrate transfer means (not shown) is not moved by causing the spin chuck 1 to protrude from the upper end of the splash guard 6 at a position lower than the third height position (hereinafter referred to as “retraction position”). It is possible to place the processed substrate W on the spin chuck 1 and receive the processed substrate W from the spin chuck 1.

  Next, the operation of the substrate processing apparatus configured as described above will be described in detail with reference to FIGS. FIG. 5 is a flowchart showing the operation of the substrate processing apparatus of FIG. FIG. 6 is a schematic diagram showing the operation of the substrate processing apparatus of FIG. First, the control unit 4 positions the splash guard 6 in the retracted position, and causes the spin chuck 1 to protrude from the upper end portion of the splash guard 6. In this state, when an unprocessed substrate W is carried into the apparatus by the substrate transfer means (not shown) (step S1), the substrate W is cleaned (chemical treatment + rinsing treatment + paddle formation processing + (Replacement process + drying process) is executed. A fine pattern made of, for example, poly-Si is formed on the substrate surface Wf. Therefore, in this embodiment, the substrate W is carried into the apparatus with the substrate surface Wf facing upward and is held by the spin chuck 1. The blocking member 9 is located at a position above the spin chuck 1 and prevents interference with the substrate W.

  Subsequently, the control unit 4 arranges the splash guard 6 at the first height position (position shown in FIG. 1), and performs the chemical treatment on the substrate W. That is, the chemical solution discharge nozzle 3 is moved to the discharge position, and the substrate W held by the spin chuck 1 is rotated at a predetermined rotation speed (for example, 800 rpm) by driving the chuck rotation mechanism 13 (step S2). Then, the chemical solution valve 31 is opened to supply hydrofluoric acid as a chemical solution from the chemical solution discharge nozzle 3 to the substrate surface Wf. The hydrofluoric acid supplied to the substrate surface Wf is spread by centrifugal force, and the entire substrate surface Wf is treated with a chemical solution using hydrofluoric acid (step S3). The hydrofluoric acid shaken off from the substrate W is guided to the first drainage tank 25a and reused as appropriate.

  When the chemical processing is completed, the chemical discharge nozzle 3 is moved to the standby position. And the splash guard 6 is arrange | positioned in a 2nd height position, and the rinse process is performed with respect to the board | substrate W as "wet process" of this invention. That is, the control unit 4 opens the rinsing liquid valve 83, and discharges the rinsing liquid (DIW) from the rinsing liquid discharge port 96a of the blocking member 9 located at the separated position to start the rinsing process (step S4: FIG. 6 ( a)). Simultaneously with the discharge of the rinsing liquid, the blocking member 9 is lowered toward the facing position and positioned at the facing position. As described above, the substrate surface Wf is kept wet by supplying the rinse liquid to the substrate surface Wf immediately after the chemical treatment. This is due to the following reason. That is, when the hydrofluoric acid is shaken off from the substrate W after the chemical treatment, the substrate surface Wf starts to dry. As a result, the substrate surface Wf may be partially dried, and spots or the like may occur on the substrate surface Wf. Therefore, in order to prevent such partial drying of the substrate surface Wf, it is important to keep the substrate surface Wf wet.

  Further, the control unit 4 opens the nitrogen valve 85 and discharges nitrogen gas from the annular gas discharge port 99c of the blocking member 9 (step S5: annular nitrogen gas supply). Nitrogen gas may be discharged simultaneously from both gas discharge ports 98a and 99c, but in this case, a relatively large flow rate of nitrogen gas is discharged from the annular gas discharge port 99c, while it is discharged from the central gas discharge port 98a. It is desirable to adjust the flow rate balance of nitrogen gas discharged from both discharge ports so that the flow rate of nitrogen gas becomes a minute amount.

  The rinse liquid supplied from the rinse liquid discharge port 96a to the substrate surface Wf is spread by the centrifugal force accompanying the rotation of the substrate W, and the entire substrate surface Wf is rinsed (wet processing step). That is, the hydrofluoric acid remaining on the substrate surface Wf is washed away by the rinse liquid and removed from the substrate surface Wf. The used rinsing liquid shaken off from the substrate W is guided to the second drainage tank 25b and discarded. Further, the nitrogen gas is supplied to the gap space SP, whereby the ambient atmosphere around the substrate surface Wf is maintained in the nitrogen gas atmosphere. Note that the rotation speed of the substrate W during the rinsing process is set to, for example, 600 rpm.

  Further, when performing the above-described rinsing process, paddle forming process, replacement process, and drying process described later, the plate-like member 90 of the blocking member 9 is rotated in the same rotational direction as the substrate W and at substantially the same rotational speed. Thereby, it is possible to prevent a relative rotational speed difference from being generated between the lower surface 90a of the plate-like member 90 and the substrate surface Wf, and to suppress the occurrence of an entrained air current in the gap space SP. For this reason, it is possible to prevent the mist-like rinse liquid and the IPA liquid from entering the gap space SP and adhering to the substrate surface Wf. Further, by rotating the plate-like member 90, it is possible to shake off the rinse liquid and the IPA liquid adhering to the lower surface 90a and prevent the rinse liquid and the IPA liquid from staying on the lower surface 90a.

  When the rinsing process for a predetermined time is completed, the control unit 4 reduces the rotation speed of the substrate W to a rotation speed (10 rpm in this embodiment) slower than the rotation speed during the rinsing process. As a result, as shown in FIG. 5B, the rinse liquid (DIW) discharged from the rinse liquid discharge port 96a while the nitrogen gas is continuously supplied to the gap space SP is accumulated on the substrate surface Wf. Thus, a rinse liquid film is formed in a paddle shape (step S6: paddle formation process). The rotational speed during the paddle formation process is not limited to 10 rpm, but the condition that the centrifugal force acting on the rinse liquid is smaller than the surface tension acting between the rinse liquid and the substrate surface is satisfied. It is necessary to set the rotation speed within the range. This is because the above conditions must be satisfied in order to form a rinse liquid film in a paddle shape.

  When the paddle formation is completed in this way, the control unit 4 closes the rinse liquid valve 83 to stop the discharge of the rinse liquid, and arranges the splash guard 6 at the third height position. Then, the control unit 4 operates the IPA liquid supply unit 7 while continuing the supply of the nitrogen gas to the gap space SP, and discharges the IPA liquid from the IPA liquid discharge port 97a (step S7). As a result, the IPA liquid is supplied toward the center of the surface of the substrate W while the gap space SP is maintained in the nitrogen gas atmosphere ((c) in the figure). In this embodiment, the rotation speed of the substrate W is changed as the replacement process proceeds. That is, in the initial stage of supplying the IPA liquid, the central portion of the rinse liquid film is replaced with the IPA liquid at the central portion of the surface of the substrate W, and a replacement region is formed in the liquid film. The rotation speed at this time is set to the same level as the paddle formation process (in this embodiment, 10 rpm). When a predetermined time, for example, 2.5 seconds elapses after the IPA liquid supply, the rotation speed of the substrate W is accelerated from 10 rpm to 100 rpm while the IPA liquid supply is continued. Thus, the acceleration of the rotation speed increases the centrifugal force acting on the liquid film (rinsing liquid region + IPA liquid region (replacement region)) on the substrate surface, so that the rinse liquid is shaken off and the replacement region expands in the radial direction. . At this time, the thickness of the liquid film on the substrate surface is reduced to a thickness corresponding to the rotation speed, and when a predetermined time (1 second in this embodiment) elapses, all the rinsing liquid present on the outer peripheral portion of the surface of the substrate W is transferred to the substrate. While being shaken off from W, the replacement region is uniformly spread over the entire surface of the substrate, and the substrate surface is entirely covered with the IPA liquid film (solvent layer) 41. Further, the control unit 4 accelerates the rotation speed of the substrate W from 100 rpm to 300 rpm in 0.5 seconds. This is performed in order to replace the rinsing liquid remaining in the gap of the fine pattern (not shown) formed on the substrate surface with the IPA liquid. In other words, the IPA liquid largely flows on the substrate surface due to the acceleration of the rotation speed, whereby the residual rinse liquid is replaced with the IPA liquid in the gaps of the fine pattern. This ensures that the rinse liquid adhering to the substrate surface is replaced with the IPA liquid.

  Thus, when the replacement process is completed, the control unit 4 increases the rotation speed of the chuck rotation mechanism 13 while continuing to discharge the nitrogen gas from the annular gas discharge port 99c to rotate the substrate W at a high speed (for example, 1000 to 3000 rpm). . Thereby, the IPA liquid adhering to the substrate surface Wf is shaken off, and the drying process (spin drying) of the substrate W is executed (step S8; drying process). From the start of the drying process, the control unit 4 opens the nitrogen valve 84 to discharge nitrogen gas also from the central gas discharge port 98a (step S9). Thus, nitrogen gas is discharged from the central gas discharge port 98a and the annular gas discharge port 99c, the gap space SP is filled with nitrogen gas, and the drying process is executed in a nitrogen gas atmosphere. When the drying process of the substrate W is completed, the control unit 4 controls the chuck rotating mechanism 13 to stop the rotation of the substrate W (Step S10) and closes the nitrogen valves 84 and 85 to stop the discharge of the nitrogen gas. (Step S11). Then, the splash guard 6 is positioned at the retracted position, and the spin chuck 1 is protruded from above the splash guard 6. Thereafter, the substrate transfer means carries the processed substrate W out of the apparatus, and a series of cleaning processes for one substrate W is completed (step S12).

  As described above, according to this embodiment, the annular gas discharge port 99c is provided in the blocking member 9 so as to surround the rotation axis J, and nitrogen gas is discharged downwardly outwardly from the annular gas discharge port 99c. Nitrogen gas is supplied to the space SP to form a nitrogen gas atmosphere in the gap space SP. Therefore, even when a relatively large flow rate of nitrogen gas is supplied to the gap space SP to form a nitrogen gas atmosphere, the nitrogen gas discharged from the annular gas discharge port 99c is annularly and outwardly downward. It spreads greatly and is discharged into the gap space SP. As a result, the flow rate of nitrogen gas can be reduced while ensuring a sufficient flow rate of nitrogen gas. In particular, in this embodiment, since the blocking member 9 is configured such that the interval r2 is larger than the interval r1, the area of the gas discharge port 99c is larger than the flow cross-sectional area of nitrogen gas in the upper gas supply path 99a. And the flow rate of nitrogen gas from the discharge port 99c can be effectively reduced. Moreover, since the nitrogen gas discharged from the gas discharge port 99c strikes the IPA liquid film 41 in an oblique direction as shown in FIG. 6C, the vertical velocity component of the nitrogen gas is decelerated, and the liquid film 41 Can be effectively prevented. Therefore, according to the present embodiment, the flow rate of the nitrogen gas can be reduced while sufficiently securing the flow rate of the nitrogen gas, and the IPA liquid film 41 formed on the substrate surface Wf is locally dried. It is possible to reliably form an inert gas atmosphere suitable for drying the substrate by supplying a sufficient nitrogen gas to the gap space SP while preventing this.

The present invention is not limited to the above-described embodiment, and various modifications other than those described above can be made without departing from the spirit of the present invention. For example, the specific configuration for expanding the area of the gas discharge port 99c as compared with the cross-sectional area of the nitrogen gas in the upper gas supply path 99a is not limited to the above-described embodiment. For example, as shown in FIG. The angle θ1 with respect to the horizontal plane of the outer wall surface (inclined surface 95b1 of the tip member 95b) at the lower end portion of the insertion shaft 95 and the angle θ2 with respect to the horizontal plane of the inner wall surface (inclined surface) 90b1 of the opening 90b, that is, θ1. > Θ2
The blocking member 9 may be configured to satisfy the above.

  In the above embodiment, nitrogen gas is supplied as the “gas” of the present invention to the gap space SP in order to form an atmosphere suitable for drying the substrate. However, an inert gas other than the nitrogen gas is used as the “gas”. It may be supplied to form an inert gas atmosphere, or low dew point air may be supplied as “gas” to form a low humidity atmosphere.

  In the replacement process of the above-described embodiment, the replacement process is performed using the IPA liquid as a low surface tension liquid in order to prevent problems such as collapse of the pattern formed on the substrate surface and improve the drying performance. However, in addition to the IPA solution, various organic solvents such as ethyl alcohol, methyl alcohol, HFE (hydrofluoroether), acetone (acetone) and Trans-1,2-dichloroethylene are used as low surface tension solutions. You may make it use as. Further, the low surface tension solvent is not limited to a single component but may be a liquid mixed with other components. For example, a mixed solution of IPA and pure water or a mixed solution of IPA and HFE may be used.

  In the above embodiment, the present invention is applied to an apparatus and a method for performing chemical treatment, rinse treatment, paddle treatment, replacement treatment, and drying treatment on a substrate W such as a semiconductor wafer. The processing content is not limited to this, and after supplying the substrate with a processing solution and performing wet processing, a low surface tension solvent having a surface tension lower than that of the processing solution is supplied to the substrate surface, and then the low surface. The present invention can be applied to a substrate processing apparatus and method for drying a substrate surface by removing the tension solvent from the substrate surface.

  The present invention is wet on all substrates including semiconductor wafers, glass substrates for photomasks, glass substrates for liquid crystal displays, glass substrates for plasma displays, FED substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, etc. The present invention can be applied to a substrate processing apparatus and method for performing processing and drying processing.

It is a figure showing one embodiment of a substrate processing device concerning this invention. It is a block diagram which shows the main control structures of the substrate processing apparatus of FIG. It is a longitudinal cross-sectional view which shows the principal part of the interruption | blocking member with which the substrate processing apparatus of FIG. 1 was equipped. It is a figure which shows the structure of a cutoff member, and the relationship between a gas supply path and a gas supply area | region. It is a flowchart which shows operation | movement of the substrate processing apparatus of FIG. It is a schematic diagram which shows operation | movement of the substrate processing apparatus of FIG. It is a figure which shows other embodiment of the substrate processing apparatus concerning this invention.

Explanation of symbols

9. Blocking member 13. Chuck rotating mechanism (substrate rotating means)
17 ... chuck pin (substrate holding means)
41 ... IPA liquid film (solvent layer)
85 ... Nitrogen valve (gas supply means)
90 ... plate-like member 90a ... lower surface (substrate facing surface)
90b ... Opening part 91 ... Rotating support shaft 91a ... Hollow part 95 ... Insertion shaft 95a ... Shaft body 95b ... Tip member 95b1 ... Inclined surface 98 ... Central gas supply path 98a ... Central gas discharge port 99a ... Upper gas supply path 99b ... Lower gas supply path 99c ... annular gas outlet J ... rotating shaft SP ... gap space W ... substrate Wf ... substrate surface

Claims (8)

After supplying a treatment liquid to the substrate surface and subjecting the substrate surface to a predetermined wet treatment, a low surface tension solvent having a surface tension lower than that of the treatment liquid is supplied to the substrate surface and then the low surface tension. In the substrate processing apparatus for drying the substrate surface by removing the solvent from the substrate surface,
Substrate holding means for holding the substrate in a substantially horizontal posture with the substrate surface facing upward;
Substrate rotating means for rotating the substrate held by the substrate holding means;
A blocking member spaced upward from the surface of the substrate held by the substrate holding means;
Gas supply means for supplying gas to a gap space formed between the blocking member and the substrate surface;
The blocking member includes a plate-like member having a substrate-facing surface facing the substrate surface and having an opening corresponding to a central portion of the substrate surface, and a hollow portion and integral with the plate-like member. A support shaft that extends upward from the plate-like member as a separate body and the hollow portion is connected to the opening; and an insertion shaft that is inserted through the hollow portion and the opening;
The gas supply means sends the gas into an annular upper gas supply path formed by the upper end of the support shaft and the insertion shaft,
An annular lower gas supply path formed by the opening and the lower end of the insertion shaft is connected to the upper gas supply path, and is provided to be inclined downward and outward from the upper gas supply path. A substrate processing apparatus, wherein the gas is discharged into the gap space from an annular gas discharge port formed at a lower end portion of a side gas supply path.   The substrate processing apparatus according to claim 1, wherein an area of the gas discharge port is wider than a cross-sectional area of the gas in the upper gas supply path.   The distance r2 between the outer wall surface of the lower end portion of the insertion shaft and the inner wall surface of the opening is larger than the distance r1 between the outer wall surface of the upper end portion of the insertion shaft and the inner wall surface of the support shaft. 3. The substrate processing apparatus according to 2.   Both the outer wall surface of the lower end portion of the insertion shaft and the inner wall surface of the opening are inclined surfaces that are inclined downward and outward, and the inclination angle θ2 of the inner wall surface with respect to the horizontal plane is the inclination angle θ1 of the outer wall surface. The substrate processing apparatus of Claim 2 smaller than this.   A central discharge port is formed at a lower end portion of the insertion shaft, and a central gas supply path for guiding gas from the gas supply means to the central discharge port is formed inside the insertion shaft, and the central discharge port is formed. The substrate processing apparatus according to claim 1, wherein the gas is discharged from an outlet into the gap space.   The substrate processing apparatus according to claim 1, wherein the gas supply unit supplies an inert gas as the gas.   The substrate processing apparatus according to claim 1, wherein the gas supply unit supplies low dew point air as the gas. A wet processing step of supplying a processing liquid to the substrate surface and rotating the substrate surface with a predetermined wet process while rotating the substrate held in a substantially horizontal posture with the substrate surface facing upward. When,
A low surface tension solvent having a surface tension lower than that of the processing liquid is supplied to the substrate surface while the blocking member is spaced apart from the substrate surface with the substrate facing surface of the blocking member facing the substrate surface. A replacement step of replacing the processing liquid adhering to the substrate surface with the low surface tension solvent by,
A drying step of drying the substrate surface by removing the low surface tension solvent from the substrate surface after the substitution step;
In the replacing step, the gas is supplied to the gap space by discharging the gas downward and outward from an annular gas discharge port formed on the substrate facing surface so as to surround the rotating shaft. Processing method.

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