JP2005243940A - Equipment and method for substrate treatment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To effectively prevent an unfavorable influence caused by a residual droplet after treatment such as cleaning treatment, in substrate equipment which supplies a treatment liquid to the lower face of a rotating substrate and applies predetermined treatment such as the cleaning to the lower face. <P>SOLUTION: A liquid pool P is formed immediately after rinsing treatment between the central portion of the lower face of a wafer W and the end of a nozzle 29 (a nozzle opening 30b and an entire upper face 30a of a blocking member 30), by which the droplet L remaining and adhered to the central portion of the lower face of the wafer W and the end of the nozzle 29 is entrapped in the liquid pool P. Moreover, the residual droplet L is removed from the central portion of the lower face of the wafer W and the end of the nozzle, together with the liquid pool P, by sucking and removing the liquid pool P. In this case, as the opening dimension of a nozzle opening 30b becomes larger toward the direction of the end of the nozzle, the liquid pool P is stably formed and removed by suction. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention supplies a processing liquid to the lower surface of various substrates such as a semiconductor wafer, a glass substrate for photomask, a glass substrate for liquid crystal display, a glass substrate for plasma display, and an optical disk substrate, and performs cleaning treatment on the lower surface. The present invention relates to a substrate processing apparatus and a substrate processing method for performing processing.

  Conventionally, as this type of substrate processing apparatus, a spin base that supports a wafer in a state in which the lower surface of the wafer is in contact with a peripheral portion of the wafer, which is a kind of substrate, and from the central portion of the spin base to the lower surface of the wafer. On the other hand, there is a substrate processing apparatus including a nozzle that supplies a processing liquid such as a chemical liquid or pure water at a predetermined flow rate (see Patent Document 1). In the substrate processing apparatus described in Patent Document 1, the processing liquid is supplied from the nozzle to the center of the lower surface of the wafer while rotating the spin base with a motor or the like while the wafer is supported. As a result, the processing liquid supplied to the center of the lower surface of the wafer is spread to the outer peripheral side of the wafer by centrifugal force, covers the entire lower surface of the wafer, and removes dirt such as particles adhering to the lower surface of the wafer. In this way, the cleaning process of the lower surface of the wafer is performed. Then, after the cleaning process, the processing liquid remaining in the nozzle is sucked and removed (or recovered), and then the wafer is rotated while supplying a dry gas such as nitrogen gas to the wafer to spin dry the wafer. Is going. As described above, in the conventional apparatus, the processing liquid remaining inside the nozzle is sucked and removed before the spin drying process, thereby preventing mist formation of the residual processing liquid during the drying process, thereby preventing the wafer watermark. Occurrence is suppressed.

Japanese Patent Laying-Open No. 2003-309102 (pages 7-9, FIG. 6)

  By the way, in order to enhance the effect of preventing the generation of watermarks by sucking the treatment liquid as described above, it is desirable to suck and remove not only the inside of the nozzle but also the treatment liquid adhering to the nozzle tip by the suction operation. This is because if the spin drying is performed with the treatment liquid droplets remaining on the tip of the nozzle, the droplets will scatter to the lower surface of the wafer during spin drying, resulting in a watermark on the wafer. This is because particles may adhere. Therefore, there is a demand for a technique that can reliably suck and remove the processing liquid from the nozzle tip.

  In order to more effectively prevent the occurrence of watermarks due to residual droplets, it is desirable to consider the following considerations not only on the nozzle side but also on the wafer side. That is, immediately before the spin drying process is performed, droplets of the processing liquid remain not only inside the nozzle but also on the entire lower surface of the wafer. In the spin drying process, droplets are removed using centrifugal force generated by high-speed rotation of the wafer, but the action of centrifugal force due to substrate rotation is different between the center of the lower surface of the wafer and the peripheral edge of the lower surface. ing. That is, the droplets adhering to the lower peripheral edge of the wafer have a relatively small size, and since a relatively large centrifugal force acts on these droplets, without causing any particular problem, These droplets can be reliably removed from the wafer. In contrast, the droplets adhering to the center of the lower surface of the wafer have a relatively large size, and only a relatively small centrifugal force acts on these droplets, so that they remain in the center of the lower surface of the wafer. However, the residual droplets may cause water marks and particle adhesion to the wafer. Therefore, reducing residual droplets adhering to the central portion of the lower surface of the wafer after the cleaning process is more important for preventing the occurrence of watermarks and the like and preventing device defects and improving yield.

  After performing predetermined processing on the lower surface of the wafer with the processing liquid such as the cleaning liquid in this way, (1) effectively preventing the liquid droplets of the processing liquid from remaining on the nozzle tip, (2 ) Effective removal of droplets remaining and adhering to the nozzle tip and the center of the lower surface of the wafer is important for preventing device defects and improving yield.

  The present invention has been made in view of the above problems, and in a substrate processing apparatus that supplies a processing liquid to the lower surface of a rotating substrate and performs a predetermined process such as a cleaning process on the lower surface, the residual liquid after the processing It aims at preventing the bad influence by a drop effectively.

  The substrate processing apparatus according to the present invention performs a predetermined process by supplying the first processing liquid to the entire lower surface of the substrate by discharging the first processing liquid toward the center of the lower surface of the substrate while rotating the substrate. In order to achieve the above object, the substrate processing apparatus is provided with an opening that is opened toward the lower surface of the substrate at the tip, and a nozzle that is disposed while the tip is separated from the substrate, and a second By supplying the processing liquid to the nozzle, the second processing liquid is discharged from the nozzle opening toward the lower surface of the substrate that has been processed to form a liquid pool between the central portion of the lower surface of the substrate and the tip of the nozzle. Supply means and suction means for sucking the liquid reservoir from the nozzle opening to remove the liquid reservoir from between the central portion of the lower surface of the substrate and the nozzle tip, and the opening size of the nozzle opening is directed toward the nozzle tip. To grow bigger Nozzle openings are provided in the nozzle tip.

  In the invention thus configured, the supply means supplies the second processing liquid to the nozzle, whereby the second processing liquid is discharged from the nozzle opening, and the center of the lower surface of the substrate that has already undergone predetermined processing and the tip of the nozzle A liquid pool is formed between the two parts. In this way, relatively large droplets remain in the center of the lower surface of the substrate before forming the liquid reservoir, that is, immediately after being subjected to the predetermined treatment, but the residual droplet is taken into the liquid reservoir by forming the liquid reservoir. It is. Further, the suction means sucks the liquid pool from the nozzle opening, and removes the liquid pool from between the central portion of the lower surface of the substrate and the tip of the nozzle. As a result, residual droplets at the center of the lower surface of the substrate and the tip of the nozzle are removed.

  Furthermore, since the nozzle opening is provided at the nozzle tip so that the opening size of the nozzle opening increases toward the nozzle tip, the liquid reservoir can be stably formed and removed by suction. Specifically, for example, when the opening size of the nozzle opening is constant at the nozzle tip, the liquid pool formed between the lower surface center portion of the substrate and the nozzle tip is sucked at a constant speed. In the initial stage of suction (a state where a liquid pool exists not only at the nozzle opening but also at the periphery of the nozzle opening) and at the end of the suction (a state where a liquid pool exists only at the nozzle opening) Since the capacities are greatly different, the moving speed of the processing liquid (second processing liquid) located at the outer edge of the liquid pool is greatly different between the initial suction stage and the final suction stage. As a result, the treatment liquid is interrupted during suction, or the gas-liquid interface (boundary between the treatment liquid and the atmosphere around the treatment liquid) stays in the same place, causing the oxidation to progress locally or the particles to adhere. Become. On the other hand, when the opening size of the nozzle opening is increased toward the nozzle tip as in the present invention, the center of the lower surface of the substrate is compared with the case where the opening size is constant at the nozzle tip. The volume of the liquid pool stored between the nozzle and the nozzle opening is increased. Therefore, even when the suction speed is constant, it is possible to reduce the difference in the moving speed of the processing liquid positioned at the outer edge of the liquid pool in the initial stage of suction and the end stage of suction. As a result, it is possible to suppress local oxidation progress and particle adhesion due to the treatment liquid being interrupted during suction or the gas-liquid interface remaining at the same location. Similarly, the above-described effects are also exhibited when a liquid pool is formed between the bottom center portion of the substrate and the nozzle tip.

  Furthermore, since the opening size of the nozzle opening increases toward the nozzle tip, the treatment liquid adhering to the nozzle tip is easily moved downward (suction means side) under the nozzle due to the influence of gravity. Become. Therefore, the processing liquid adhering to the nozzle tip can be easily sucked when the processing liquid is sucked from the nozzle opening. As a result, it is possible to suppress the generation of watermarks and particles on the lower surface of the substrate due to the residual processing liquid during spin drying.

  Here, in order to discharge the second processing liquid from the nozzle, for example, a discharge port may be provided so as to communicate with the nozzle opening at the nozzle tip and to face the center of the lower surface of the substrate. Further, the liquid reservoir may be sucked using the discharge port. This makes it possible to form and remove the liquid pool with a simple apparatus configuration. Further, a suction port may be provided separately from the discharge port so as to communicate with the nozzle opening at the nozzle tip, and the suction port may be used for removing the liquid pool. As described above, when the supply path of the second processing liquid and the suction path of the liquid reservoir are distinguished, the mixing of the processing liquid can be surely prevented.

  Moreover, as a structure of a nozzle front-end | tip part, you may make it provide the opposing surface which opposes the lower surface of a board | substrate so that a nozzle opening part may be surrounded, for example. Here, a liquid pool is formed between the entire surface of the nozzle opening and the opposed surface of the nozzle and the center of the lower surface of the substrate by discharging the second processing liquid from the discharge port provided to communicate with the nozzle opening. Is done. Therefore, the liquid pool can be formed stably, and the liquid droplets can be reliably removed from the central portion of the lower surface of the substrate and the tip of the nozzle. In addition, when providing a suction port other than the discharge port, the suction port may be provided in communication with the nozzle opening. In this case, the suction port can be provided on the inner bottom surface of the nozzle opening.

  Here, the type of the second processing liquid supplied to the nozzle by the supply unit is arbitrary, but a liquid having the same component as the first processing liquid is used as the second processing liquid, or a nozzle cleaning liquid for cleaning the nozzle is used. Also good. In particular, in the former case, since the liquid pool is formed by the liquid of the same component, the liquid pool can be formed satisfactorily. In addition, since there is no need to switch the type of liquid discharged from the nozzle tip when shifting from liquid pool formation to liquid pool removal, the above transition can be performed smoothly, throughput can be improved, and control can be performed. It will be easy. In the latter case, by performing the liquid pool formation and liquid pool removal, in addition to the residual liquid droplet removing action, a nozzle cleaning action can be obtained at the same time. Therefore, the nozzle can be kept clean by this nozzle cleaning action.

In order to achieve the above object, the substrate processing method according to the present invention rotates the substrate while lowering the lower surface of the substrate from the nozzle opening provided at the nozzle tip of the substrate processing apparatus according to any one of claims 1 to 9. The first process liquid is discharged toward the substrate, whereby the first process liquid is supplied to the entire lower surface of the substrate, and the second process liquid is discharged from the nozzle opening toward the lower surface of the substrate. A second step of forming a liquid pool between the lower surface center portion and the nozzle tip portion, and removing the liquid pool from between the lower surface center portion of the substrate and the nozzle tip portion by sucking the liquid pool from the nozzle opening. A third step.

  In the invention configured as described above, when the processing using the first processing liquid (first step) is executed, relatively large droplets remain in the central portion of the lower surface of the substrate. However, following the first step, the second processing liquid is discharged from the nozzle tip toward the lower surface of the substrate, and a liquid pool is formed between the center of the lower surface of the substrate and the nozzle tip. At this time, the liquid droplets remaining at the center of the lower surface of the substrate and the tip of the nozzle after the first step are taken into the liquid reservoir. Thus, the liquid reservoir containing residual droplets is sucked and removed from between the center of the lower surface of the substrate and the tip of the nozzle. As a result, residual droplets at the center of the lower surface of the substrate and the tip of the nozzle are removed.

  Furthermore, since the liquid pool is formed and removed by suction from the nozzle opening provided at the nozzle tip of the substrate processing apparatus according to any one of claims 1 to 9, processing is performed during the formation and suction of the liquid pool. It is possible to suppress the progress of local oxidation and particle adhesion due to the liquid (second processing liquid) being interrupted or the gas-liquid interface (boundary between the processing liquid and the atmosphere surrounding the processing liquid) remaining in the same place. .

  The processing with the first processing liquid is performed while rotating the substrate. However, the liquid pool may be formed and removed while the substrate is rotated as it is, or the liquid pool may be stored after the substrate rotation is stopped. May be formed and removed. In particular, in the former case, the remaining liquid droplets are removed as described above at the central portion of the lower surface of the substrate, and the remaining liquid droplets are shaken off by the centrifugal force generated by the rotation of the substrate at the lower surface peripheral portion. Residual droplets can be effectively removed from the entire lower surface of the substrate.

  Further, the suction speed of the liquid pool may be maintained constant during the third step, but may be accelerated in multiple stages. That is, in order to reliably and continuously remove and remove the liquid pool, it is desirable to slowly suck the liquid pool in a stationary state at the start of suction to prevent the liquid pool from being separated. Of course, the suction operation may be continued during the third step with the suction speed at this time point, but after the start of suction, the suction speed may be increased within a range where separation of the liquid pool does not become a problem. The time required to remove the liquid pool is shortened and the throughput is improved.

  The substrate processing apparatus according to the present invention is a substrate processing apparatus that performs a predetermined process by supplying a processing liquid to the entire lower surface of the substrate by discharging the processing liquid toward the center of the lower surface of the substrate while rotating the substrate. In order to achieve the above object, an opening is provided at the tip of the substrate so as to face the center of the lower surface of the substrate, and a nozzle disposed with the tip being separated from the substrate, and a processing liquid is supplied to the nozzle. A supply means for discharging the treatment liquid from the nozzle opening and supplying the treatment liquid to the entire lower surface of the substrate, and a suction means for sucking the treatment liquid remaining in the nozzle from the nozzle opening. A nozzle opening is provided at the nozzle tip so as to increase toward the tip of the nozzle.

  In the invention configured as described above, the supply liquid is discharged from the nozzle opening by supplying the processing liquid to the nozzle, and the processing liquid is supplied to the entire lower surface of the substrate to perform a predetermined process. Then, the residual processing liquid is removed from the nozzle by the suction means sucking the processing liquid remaining in the nozzle from the nozzle opening. Particularly, since the opening size of the nozzle opening increases toward the tip of the nozzle, the treatment liquid adhering to the nozzle tip is easily moved downward (on the suction means side) under the influence of gravity. Become. Therefore, the processing liquid adhering to the nozzle tip can be sucked easily and reliably. As a result, it is possible to suppress the generation of watermarks and particles on the lower surface of the substrate due to the residual processing liquid during spin drying.

  According to the present invention, the opening size of the nozzle tip portion becomes larger toward the tip of the nozzle, that is, the opening shape of the nozzle tip portion is a trumpet shape. For this reason, the droplets of the treatment liquid remaining on the nozzle tip after the predetermined treatment using the treatment liquid on the lower surface of the substrate is easily drawn into the nozzle along the opening slope of the nozzle tip. Removed by suction. Accordingly, it is possible to effectively prevent droplets from remaining at the nozzle tip.

  In addition, since the second processing liquid is discharged from the nozzle opening provided at the nozzle tip toward the lower surface of the substrate to form a liquid pool between the lower surface central portion of the substrate and the nozzle tip, Residual liquid droplets adhering to the center of the lower surface of the substrate or the tip of the nozzle can be reliably taken into the liquid reservoir. Since the liquid pool is sucked and removed from between the lower surface center portion of the substrate and the nozzle tip portion, it is possible to effectively prevent droplets from remaining on the lower surface center portion of the substrate and the nozzle tip portion. be able to. Furthermore, setting the opening size of the nozzle tip as described above has a great advantage when forming a liquid pool. That is, since the opening size of the nozzle opening portion increases toward the nozzle tip, the capacity of the liquid reservoir stored between the lower surface center portion of the substrate and the nozzle opening portion can be increased. Therefore, the difference in the moving speed of the processing liquid located at the outer edge of the liquid pool in the initial stage and the final stage of the liquid pool (or suction) can be reduced. As a result, discontinuation of the processing liquid during suction, local progress of oxidation, and adhesion of particles are suppressed, and formation of a liquid pool and suction removal can be performed stably.

<First Embodiment>
FIG. 1 is a diagram showing a first embodiment of a substrate processing apparatus according to the present invention. This substrate processing apparatus supplies wafer cleaning liquid to the upper and lower surfaces of a semiconductor wafer (hereinafter simply referred to as “wafer”) W, which is a kind of “substrate” of the present invention, and performs wafer cleaning processing. This is an apparatus for spin drying after rinsing with a rinsing liquid such as pure water or DIW after the treatment. In this substrate processing apparatus, a hollow rotary shaft 1 is connected to a rotary shaft of a motor 3 and can be rotated around a vertical axis by driving the motor 3. A disc-shaped spin base 5 is integrally connected to the upper end portion of the rotating shaft 1 by a fastening component such as a screw. A plurality of support pins 7 that support the wafer W while being in contact with the outer peripheral edge of the wafer W are provided near the periphery of the spin base 5. The wafer W is horizontally supported by a plurality of support pins 7 while being separated from the spin base 5 facing the lower surface of the wafer W by a predetermined distance. Thus, in this embodiment, the substrate support means for supporting the wafer (substrate) W is constituted by the spin base 5 and the plurality of support pins 7.

  Above the spin base 5, an atmosphere blocking member 9 having an opening at the center is disposed. The atmosphere blocking member 9 is slightly larger than the diameter of the wafer W and is attached to the lower end portion of a hollow cylindrical support shaft 11 so as to be integrally rotatable. The support shaft 11 is connected to a cutoff drive mechanism (not shown), and the atmosphere cutoff member 9 is rotated around the vertical axis J together with the support shaft 11 by driving a motor of the cutoff drive mechanism. Has been. In addition, the atmosphere blocking member 9 can be brought close to the spin base 5 or can be separated from the spin base 5 by operating a lifting drive actuator (for example, an air cylinder) of the blocking drive mechanism.

  An upper cleaning nozzle 12 is coaxially provided in the hollow portion of the support shaft 11, and pure water, a chemical solution, or the like is provided in the vicinity of the rotation center on the upper surface of the wafer W supported by the support pins 7 from the nozzle port 12 a at the lower end thereof. This processing liquid (wafer cleaning liquid or rinsing liquid) can be supplied. That is, the upper cleaning nozzle 12 is connected to the processing liquid supply source 15 through the on-off valve 13 and is controlled from the upper cleaning nozzle 12 to the wafer W by the on-off control of the on-off valve 13 by the control unit 17 that controls the entire apparatus. Wafer cleaning liquid or rinsing liquid (such as pure water or DIW) is supplied to the upper surface of the substrate.

  Further, a gap between the inner wall surface of the hollow portion of the support shaft 11 and the outer wall surface of the upper cleaning nozzle 12 serves as a gas supply path 18. The gas supply path 18 is continuously connected to a gas supply source 21 via an on-off valve 19. Then, after performing wafer cleaning and rinsing processing by the upper cleaning nozzle 12, gas is supplied to the upper surface of the wafer W via the gas supply path 18 by opening / closing control of the opening / closing valve 19 by the control unit 17. It is possible to perform a drying process.

  Further, a side cleaning nozzle 23 for supplying DIW between the atmosphere blocking member 9 and the upper surface of the wafer W or between the upper surface of the spin base 5 and the lower surface of the wafer W is provided on the side of the spin base 5. ing. The side cleaning nozzle 23 is connected to a DIW supply source 27 through an on-off valve 25. The side cleaning nozzle 23 is connected to a vertical lifting mechanism (not shown) so that the nozzle 23 can be positioned in the vertical direction in accordance with a control command from the control unit 17. The controller 17 adjusts the opening / closing timing of the on-off valve 25 while controlling the height position of the side cleaning nozzle 23, so that the DIW is transferred from the side cleaning nozzle 23 to the upper surface of the atmosphere blocking member 9 and the wafer W. Is supplied to the lower surface of the atmosphere blocking member 9 or is supplied to the opposite surface of the spin base 5 through the space between the opposite surface of the spin base 5 and the lower surface of the wafer W.

  A lower cleaning nozzle 29 corresponding to the “nozzle” of the present invention is coaxially provided in the hollow portion of the rotating shaft 1. A supply / suction mechanism 33 is connected to the lower cleaning nozzle 29 through a pipe 31. A cylindrical gas supply path 59 is formed in the gap between the inner wall surface of the rotating shaft 1 and the outer wall surface of the lower cleaning nozzle 29, and the distal end of the gas supply path 59 is a gas outlet 61. A gas such as nitrogen gas is supplied from the gas outlet 61 to the space between the lower surface of the wafer W and the surface facing the spin base 5. The gas outlet 61 is connected to a gas supply source 67 through an on-off valve 63 and a flow rate adjustment valve 65 that are controlled to open and close by the control unit 17.

  2A and 2B are views showing the upper end of the lower cleaning nozzle. FIG. 2A is a plan view and FIG. 2B is a cross-sectional view. A blocking member 30 is attached to the tip of the nozzle body 29 a at the tip of the lower cleaning nozzle 29, and the wafer W is opposed to the wafer W while the upper surface 30 a faces the lower surface of the wafer W supported by the support pins 7. They are spaced apart. Thus, the upper surface 30a of the blocking member 30 corresponds to the “nozzle facing surface” of the present invention. Further, in the blocking member 30, a nozzle opening 30b opened toward the lower surface of the wafer W is provided at a substantially central portion so as to be surrounded by the upper surface 30a. A discharge port 30c is provided on the inner bottom surface of the nozzle opening 30b so as to communicate with the tip of the nozzle body 29a, and a processing liquid such as a cleaning liquid or a rinsing liquid is supplied to the lower surface of the wafer W through the discharge port 30c. Discharge is possible. The opening dimension D1 of the nozzle opening 30b gradually increases from the discharge port 30c toward the nozzle tip (the upper surface 30a of the blocking member 30). Thus, the nozzle opening 30b is just a truncated cone, a trumpet, with the discharge port 30c as the upper surface, and the opening surface of the nozzle tip (the surface that is flush with the upper surface 30a and surrounded by the upper surface 30a) as the lower surface. Alternatively, a mortar-shaped space is formed.

  On the other hand, an annular portion surrounding the nozzle opening 30 b covers the upper side of the gas ejection port 61. Therefore, the gas ejected from the gas ejection port 61 is supplied to the space between the lower surface of the wafer W and the opposing surface of the spin base 5 through the gap between the lower surface of the blocking member 30 and the opposing surface of the spin base 5. . Although the planar size D2 of the blocking member 30 is arbitrary, it is set to such an extent that the gas outlet 61 is blocked as described above, or the planar size D2 is further expanded to connect the rotating shaft 1 and the spin base 5 to each other. In order to connect, you may comprise so that the fastening components fastened by the connection part of both may be covered. In order to cover the fastening part in this way, the plane size D2 may be set to, for example, 50 mm or more, thereby effectively preventing a cleaning liquid or a rinsing liquid from entering a part of the fastening part, for example, a screw groove. it can. Further, as the planar size D2 becomes larger, the liquid reservoir becomes larger, and the time required to remove the droplets from the central portion of the lower surface of the wafer W and the lower cleaning nozzle 29 becomes longer as will be described later. Further, when the wafer W is transferred, there is a problem that it interferes with the wafer transfer mechanism. Therefore, considering these points, it is desirable to set the plane size D2 to 120 mm or less, for example.

  Next, the supply / suction mechanism 33 will be described with reference to FIG. FIG. 3 is a block diagram showing a schematic configuration of the supply / suction mechanism. The supply / suction mechanism 33 has two main functions: (1) a function of supplying a cleaning liquid and a rinsing liquid to the lower cleaning nozzle 29, and (2) a wafer W as described later through the lower cleaning nozzle 29. It also has a function of sucking and removing a liquid pool formed between the central portion of the lower surface and the blocking member 30. That is, the supply / suction mechanism 33 functions as the “supply unit” and “suction unit” of the present invention. Of course, it goes without saying that the supply mechanism and the suction mechanism may be provided separately and independently as in the third embodiment.

  First, the supply function will be described. In this supply / suction mechanism 33, a first DIW supply source 35 for supplying DIW (= deionized water) is connected to one end of the pipe 31, while a lower cleaning nozzle is connected to the other end. 29 is connected in communication. The pipe 31 is provided with a pressure regulator 37 for adjusting the flow rate of DIW from the first DIW supply source 35. Further, a flow meter 39 for measuring the flow rate of DIW from the first DIW supply source 35 is provided in the pipe 31 on the downstream side of the pressure regulator 37. The control unit 17 obtains a difference between the flow rate measured by the flow meter 39 and a preset flow rate (first flow rate FV1), and the electropneumatic converter 41 adjusts the pressure based on a command voltage based on the difference. The air pressure to the container 37 is adjusted.

  A chemical solution injection part 43 is provided in the pipe 31 downstream of the flow meter 39. In order to be able to independently adjust the amount of each fluid injected into the pipe 31, the chemical solution injection unit 43 includes three flow rate control valves 45 having functions of an on-off valve and a flow rate control valve, 47, 49 and an on-off valve 51 provided in the pipe 31 on the downstream side of the flow meter 39.

  The first flow rate adjustment valve 45 communicates with the first chemical solution supply source 53 to adjust the injection amount of the first chemical solution into the pipe 31, and the second flow rate adjustment valve 47 supplies the second chemical solution supply. It communicates with the source 55 and adjusts the injection amount of the second chemical liquid into the pipe 31. The third flow rate adjustment valve 49 communicates with the second DIW supply source 57 and adjusts the DIW injection amount into the pipe 31. Note that the opening / closing control of the opening / closing valve 51 and the flow rate adjusting valves 45, 47, 49 is all controlled by the control unit 17.

  When performing the wafer cleaning process on the lower surface of the wafer W, the control unit 17 opens the on-off valve 51 and is adjusted by the pressure regulator 37 via the electropneumatic converter 41 so as to become the first flow rate FV1. The DIW from the first DIW supply source 35 is supplied to the pipe 31, and the second DIW supply is adjusted by the third flow rate adjusting valve 49 so that the second flow rate FV2 is smaller than the first flow rate FV1. DIW from the source 57 is injected into the pipe 31. Further, the flow control valves 45 and 47 are adjusted to inject a required amount of the first or / and second chemical solution into the pipe 31. Therefore, a wafer cleaning liquid obtained by mixing a required amount of a chemical solution with a large flow rate DIW, which is a combination of the first flow rate FV1 and the second flow rate FV2, is supplied to the lower surface of the wafer W.

  When supplying the rinsing liquid to the lower surface of the wafer W and rinsing the lower surface of the wafer W, the control unit 17 closes the flow rate adjusting valves 45 and 47 to inject the chemical into the pipe 31. Stop. Thus, only DIW is supplied to the wafer W as a rinsing liquid at a large flow rate from the lower cleaning nozzle 29 to the lower surface of the wafer W, so that the rinsing process with the rinsing liquid is performed on the lower surface of the wafer W that has been in contact with the wafer cleaning liquid. Is called. As described above, in the present embodiment, the rinsing liquid functions as the “first processing liquid” of the present invention and executes the rinsing process as a predetermined process.

  Further, when cleaning the tip of the lower cleaning nozzle 29, that is, the nozzle opening 30 b and the upper surface 30 a of the blocking member 30, the on-off valve 51 and the flow rate control valves 45 and 47 are closed, and the first flow rate control valve 49 is used to close the first. The second flow rate FV2 is adjusted to be smaller than the second flow rate FV1, and only DIW is supplied from the second DIW supply source 57 to the pipe 31 as the “second processing liquid” and “nozzle cleaning liquid” of the present invention. inject. Then, a pool of nozzle cleaning liquid (rinsing liquid) is formed between the center of the lower surface of the wafer W and the entire surface of the nozzle opening 30 b and the upper surface 30 a of the blocking member 30. At this time, the cleaning process of the lower cleaning nozzle 29 is also performed at the same time by forming the liquid pool.

  Next, the suction function will be described. In the supply / suction mechanism 33, a suction unit 81 such as an aspirator or a vacuum pump is connected to the pipe 31 via the on-off valve 83 on the upstream side of the DIW supply position from the second DIW supply source 57 to the pipe 31. ing. For this reason, not only the liquid component in the pipe 31 but also the liquid reservoir formed as described later is sucked by opening the on-off valve 83 in a state where the supply of the chemical solution and DIW is stopped while the suction unit 81 is operated. And can be removed.

  Next, the operation of the substrate processing apparatus configured as described above will be described in detail with reference to FIGS. FIG. 4 is a flowchart showing the operation of the substrate processing apparatus of FIG. FIG. 5 is a diagram schematically showing the operation of the substrate processing apparatus of FIG. In this substrate processing apparatus, when an unprocessed wafer W is transferred to the substrate processing apparatus by a substrate transfer robot (not shown) and placed on the support pins 7, the control unit 17 controls each part of the apparatus as follows. Then, the wafer cleaning process, the rinse process, the liquid pool forming process, the liquid pool removing process and the drying process are executed. When the wafer W is transferred by the substrate transfer robot, the atmosphere blocking member 9, the support shaft 11 and the upper cleaning nozzle 12 are integrally separated and retreated above the spin base 5.

  When the wafer W is set on the support pins 7 as described above, the atmosphere blocking member 9, the support shaft 11, and the upper cleaning nozzle 12 are integrally lowered to place the atmosphere blocking member 9 in proximity to the wafer W. Subsequently, the motor 3 rotates to rotate the wafer W at the first rotation speed. At this time, the atmosphere blocking member 9 is rotated around the vertical axis J together with the support shaft 11 by driving a motor of a blocking drive mechanism (not shown). Then, with the start of rotation of the wafer W at the first rotational speed, the control unit 17 opens the on-off valve 51 so that the pressure regulator 37 causes the first flow rate FV1 via the electropneumatic converter 41. The adjusted DIW is supplied from the first DIW supply source 35 to the pipe 31 and the DIW adjusted by the flow rate adjustment valve 49 so as to become the second flow rate FV2 is supplied from the second DIW supply source 57 to the pipe 31. inject. Further, a predetermined amount of chemical liquid is injected into the pipe 31 from the first chemical liquid supply source 53 and the second chemical liquid supply source 55 via the flow rate control valves 45 and 47, and the first flow rate FV1 and the second flow rate FV2 The wafer cleaning liquid in which the chemical liquid is mixed with the DIW having a large flow rate is supplied to the lower surface of the wafer W from the discharge port 30c of the lower cleaning nozzle 29, and the lower surface of the wafer W is cleaned with the wafer cleaning liquid (step S1).

  At this time, the wafer cleaning liquid supplied at a large flow rate is vigorously supplied to the lower surface of the wafer W from the discharge port 30c of the lower cleaning nozzle 29, and along with the rotation of the wafer W at the first rotational speed, The wafer cleaning liquid moves from the center of the lower surface of the wafer W toward the peripheral edge and scatters around. At this time, splashes of the wafer cleaning liquid containing the chemical solution and droplets containing particles adhering to the lower surface of the wafer W adhere to the blocking member 30 of the lower cleaning nozzle 29 and the opposing surface of the spin base 5. Also, a part of the wafer cleaning liquid splash adheres to the atmosphere blocking member 9.

  Therefore, the control unit 17 executes the rinsing process using DIW as the rinsing liquid as follows. That is, the control unit 17 closes the flow rate control valves 45 and 47 to stop the injection of the chemical solution into the pipe 31. As a result, only DIW is supplied to the wafer W from the lower cleaning nozzle 29 to the lower surface of the wafer W at a large flow rate. Therefore, cleaning of the lower surface of the wafer W that has been in contact with the wafer cleaning liquid by DIW, that is, pre-rinsing processing is performed. Is called. At this point, the wafer cleaning liquid droplets remain partially attached to the blocking member 30 of the lower cleaning nozzle 29 and the opposing surface of the spin base 5.

  Further, in parallel with the pre-rinsing process of the wafer lower surface by DIW, the control unit 17 opens the on-off valve 13 to clean the atmosphere blocking member 9, and from the processing liquid supply source 15 through the upper cleaning nozzle 12, The supply of DIW is started on the upper surface of the wafer W, and a DIW protective film is formed on the upper surface of the wafer W. Further, with this protective film formed, the controller 17 opens the on-off valve 25 and opens DIW into the space between the atmosphere blocking member 9 and the upper surface of the wafer W from the DIW supply source 27 via the side cleaning nozzle 23. Start supplying. Thereby, the atmosphere blocking member 9 can be cleaned while protecting the upper surface of the wafer W.

  Subsequently, the control unit 17 lowers the side cleaning nozzle 23 between the wafer W and the spin base 5. Thereby, the DIW supply to the atmosphere blocking member 9 is stopped and the atmosphere blocking member 9 is dried, while the DIW supply destination from the side cleaning nozzle 23 is the lower surface of the wafer W and the opposite surface of the spin base 5. The opposing surfaces of the support pin 7 and the spin base 5 located in the space are cleaned.

  Further, the control unit 17 rotates the wafer W again at the first rotational speed and opens the flow rate adjusting valves 49 and 51, and DIW is rinsed from the lower cleaning nozzle 29 on the lower surface of the wafer W rotated at high speed. The liquid is supplied at a large flow rate. Therefore, similarly to the above-described pre-rinsing process, the lower surface of the wafer W is again cleaned with DIW. Further, the control unit 17 opens the on-off valve 13 and supplies DIW to the upper surface of the wafer W from the processing liquid supply source 15 through the upper cleaning nozzle 12. In this way, DIW is supplied to the entire wafer W and the raster process is executed.

  In this embodiment, since the rinsing process is performed while rotating the wafer W, most of the rinsing liquid is shaken off from the wafer W, but a part of the rinsing liquid is applied to the lower surface of the wafer W or the tip of the lower cleaning nozzle 29. It remains in the form of droplets. In addition, among the remaining droplets, relatively large droplets L remain at the center of the lower surface of the wafer W and at the tip of the nozzle, and these residual droplets L become one of the factors for generating watermarks and particles (FIG. 5 (a)).

Therefore, in this embodiment, the liquid droplets L are removed by executing a liquid pool formation process (step S3; second process) and a liquid pool removal process (step S4; third process). More specifically, in step S3, the control unit 17 sets the flow rate of DIW and the number of wafer rotations as the “second processing liquid” and “nozzle cleaning liquid” of the present invention to conditions suitable for the formation of the liquid pool. Here, the flow rate and rotation speed of DIW can be set as follows, for example.
DIW flow rate: 1000 cm ³ / min or less Wafer rotation speed: 200 rpm or less
DIW flow rate: 400 cm ³ / min or less Wafer rotation speed: 0 to 50 rpm
It is more preferable to set to.

  Under such conditions, DIW whose flow rate is adjusted by the flow rate adjusting valve 49 is injected from the second DIW supply source 57 into the pipe 31 and discharged from the discharge port 30c of the lower cleaning nozzle 29 toward the lower surface of the wafer W. The In addition, by controlling the rotation of the motor 3 to set the wafer W to a wafer rotation speed suitable for forming a liquid pool, the nozzles are formed between the lower surface of the wafer W and the entire surface of the nozzle opening 30b and the upper surface 30a of the blocking member 30. A liquid pool P of the cleaning liquid (DIW) is formed.

  By setting the flow rate of the nozzle cleaning liquid and the number of rotations of the wafer, a liquid pool P (FIG. 5B) is formed, and immediately after the rinsing process (first step), the center of the lower surface of the wafer W and the tip of the nozzle 29 are formed. The droplet L remaining in the part is taken into the liquid reservoir P. Further, DIW is supplied as a nozzle cleaning liquid over the entire surface of the nozzle opening 30b and the upper surface 30a of the blocking member 30, and the nozzle cleaning is reliably performed. In addition, after the liquid reservoir P is formed, the above-mentioned setting conditions may be maintained for a predetermined time so that the nozzle cleaning is performed reliably, or immediately after the liquid reservoir P is formed, the next liquid reservoir is removed. You may do it.

  In the next step S4, the controller 17 closes the on-off valve 51 and the flow rate adjustment valve 49 to stop the supply of the chemical solution and DIW to the nozzle 29, and opens the on-off valve 83 in the stopped state. As a result, the liquid component and the liquid reservoir P in the pipe 31 are sucked into the suction portion 81 through the discharge port 30 c, and between the center portion of the lower surface of the wafer W and the entire upper surface 30 a of the nozzle opening 30 b and the blocking member 30. The existing liquid reservoir P is removed. Therefore, by removing the liquid pool P by suction, the droplets L are reliably removed from the center of the lower surface of the wafer W and the tip of the nozzle.

  Furthermore, since the opening dimension D1 of the nozzle opening 30b increases toward the nozzle tip, the liquid reservoir P can be stably formed and removed by suction. That is, by configuring the nozzle opening 30b as described above, for example, as shown below when the nozzle tip is flat (when the discharge port 30c is provided in communication with the upper surface of the blocking member 30 as it is). Problems can be suppressed.

  When the nozzle tip is flat, when the liquid pool formed between the central portion of the lower surface of the wafer W and the nozzle tip is sucked at a constant speed, not only the nozzle opening 30b but also the upper surface 30a. In addition, since the capacity of the liquid reservoir P is greatly different between the state where the liquid reservoir P exists) and the end of suction (the state where the liquid reservoir P exists only in the nozzle opening 30b), it is located at the outer edge of the liquid reservoir P. The moving speed of the nozzle cleaning liquid (nozzle cleaning liquid that has taken in the residual liquid droplets L) differs greatly between the initial stage of suction and the final stage of suction. As a result, the nozzle cleaning liquid is interrupted during suction, or the gas-liquid interface (boundary between the nozzle cleaning liquid and the atmosphere around the nozzle cleaning liquid) stays in the same location, causing oxidation to progress locally or particles adhering It becomes.

  On the other hand, in this embodiment, since the opening dimension D1 of the nozzle opening 30b increases toward the nozzle tip, the lower surface center portion of the wafer W and the nozzle tip (nozzle (nozzle)) are compared with the case where the nozzle tip is flat. The capacity of the liquid reservoir P stored between the opening 30b) can be increased. Therefore, even when the suction speed is constant, the difference in the moving speed of the nozzle cleaning liquid located at the outer edge of the liquid reservoir P between the initial stage of suction (FIG. 5C) and the final stage of suction (FIG. 5D) should be reduced. Can do. As a result, the progress of local oxidation and the adhesion of particles due to the nozzle cleaning liquid being interrupted during suction or the gas-liquid interface staying at the same location can be suppressed. The above-described effect is not limited to the case where the liquid pool P is removed by suction (third process) between the center of the lower surface of the wafer W and the tip of the nozzle, but also when the liquid pool P is formed (second process). Is also played.

Further, if the suction speed is set at a high speed when the liquid reservoir P is removed by suction, a part of the liquid reservoir P may be separated during the suction processing and may remain partially. It is desirable to set the suction speed in consideration of the liquid component. In this embodiment, the suction speed is set to 1000 cm ³ / min or less considering that the rinse liquid (first processing liquid) and the nozzle cleaning liquid (second processing liquid) are both DIW, but 150 It is desirable to set it to ˜250 cm ³ / min.

  Next, the control unit 17 closes the on-off valve 83 to stop the suction from the discharge port 30 c, and then supplies the inert gas adjusted to an appropriate flow rate by the on-off valve 19 shown in FIG. 1 from the gas supply source 21. While supplying the gas through the gas supply path 18 toward the upper surface of the wafer W, the on-off valve 63 is opened, and the inert gas adjusted to an appropriate flow rate by the flow rate adjusting valve 65 is supplied from the gas supply source 67 to the gas supply path 59. Then, the gas is supplied from the gas outlet 61 toward the lower surface of the wafer W. Then, the rotation of the motor 3 is set to a higher rotational speed from the first rotational speed. Thus, while the wafer W is rotated at a high speed, an inert gas is supplied to the upper and lower surfaces of the wafer W, and the wafer W is rotated at a speed higher than the first rotational speed to dry the wafer W (FIG. 5E )) Is performed (step S5).

  After the drying process in step S5 is completed, the control unit 17 outputs a drive stop of the motor 3 to the motor 3 and stops the rotation of the wafer W. As a result, the series of cleaning processing, rinsing processing, liquid pool formation processing, liquid pool removal processing, and drying processing are stopped.

  As described above, according to this embodiment, immediately after the rinsing process, a liquid pool is formed between the center of the lower surface of the wafer W and the tip of the nozzle 29 (the entire surface of the nozzle opening 30b and the upper surface 30a of the blocking member 30). By forming P, the liquid droplets L remaining on the center of the lower surface of the wafer W and the tip of the nozzle 29 are taken into the liquid reservoir P. Further, by removing the liquid pool P by suction, the residual liquid droplets L are effectively removed from the central portion of the lower surface of the wafer W and the tip of the nozzle together with the liquid pool P. In addition, since the opening dimension D1 of the nozzle opening 30b increases toward the nozzle tip, the capacity of the liquid reservoir P stored between the center of the lower surface of the wafer W and the nozzle opening 30b can be increased. it can. Therefore, the difference in the moving speed of the nozzle cleaning liquid located at the outer edge of the liquid reservoir P in the initial suction stage and the final suction stage can be reduced. Thereby, the nozzle cleaning liquid is not interrupted during the suction, and the liquid pool P can be stably formed and removed by suction, and the droplet L is reliably removed from the wafer W and the tip of the nozzle. . Furthermore, it is possible to suppress local oxidation progress and particle adhesion due to the gas-liquid interface remaining at the same location. As a result, the generation of watermarks and the adhesion of particles can be effectively suppressed during spin drying (step S5).

  The type of the second processing liquid used for forming the liquid reservoir is arbitrary, but in order to reliably take in the residual liquid droplet L into the liquid reservoir P, the bottom surface of the wafer W or the tip of the nozzle by rinsing. It is desirable to use a liquid that is compatible with the rinsing liquid (first processing liquid) adhering to the substrate. In this embodiment, the same rinsing liquid is used as the second processing liquid. Therefore, it is possible to satisfactorily form the liquid reservoir P by taking in the residual droplet L. Further, since the rinse liquid also has a function as a nozzle cleaning liquid for cleaning the nozzle tip, in this embodiment, the nozzle cleaning is performed simultaneously with the removal of the residual droplet L. Therefore, a series of substrate processing from cleaning processing to drying processing can be performed satisfactorily without preventing a reduction in throughput.

  Here, when attention is paid to the throughput, the following effects can be expected in this embodiment. That is, in the conventional apparatus in which it is difficult to remove residual droplets, the rinse time is changed and set according to the chemical concentration used in the cleaning process. This is because, as the chemical concentration of the wafer cleaning liquid used for the cleaning process increases, the concentration of the chemical contained in the liquid droplets remaining on the center of the lower surface of the wafer and the nozzle also increases, and the probability of wafer contamination due to scattered particles increases. . Therefore, in the conventional apparatus, the rinsing process time has to be set longer depending on the chemical concentration, and as a result, reduction of the throughput is unavoidable. On the other hand, in this embodiment, since the residual droplet itself, which is one of the main factors of scattered particles, can be removed, the time required for the rinsing process is set to a relatively short time regardless of the chemical concentration of the wafer cleaning liquid. can do. As a result, this embodiment is very effective in improving the throughput in an apparatus using a high concentration chemical solution. In addition, the amount of rinsing liquid required for the rinsing process can be saved, which greatly contributes to reduction in running cost.

  In the above embodiment, the rinsing process is performed while rotating the wafer W, and the liquid pool P is formed and removed while the wafer W is rotated as it is. In this way, the remaining droplets L are suppressed, and the remaining droplets are shaken off by the centrifugal force generated by the rotation of the wafer at the periphery of the lower surface, thereby effectively suppressing the droplets remaining on the lower surface of the wafer W. be able to. Of course, it is not essential that the wafer W be rotated in forming and removing the liquid reservoir P, and it goes without saying that it is optional.

  Furthermore, in the above-described embodiment, the discharge port 30c is provided so as to face the center of the lower surface of the wafer W in order to discharge the nozzle cleaning liquid (second processing liquid) from the nozzle 29, but this discharge port 30c is used. Therefore, the liquid reservoir P can be reliably formed and removed with a simple configuration. Further, by setting the plane size D2 of the upper surface 30a of the blocking member 30 according to the arrangement position of a fastening part (not shown) that connects the rotating shaft 1 and the spin base 5, a part of the fastening part, for example, a screw groove It is possible to effectively prevent the cleaning liquid and the rinse liquid from entering into the water and the like, and to suppress the generation of watermarks and particles.

Second Embodiment
FIG. 6 is a diagram showing the operation of the second embodiment of the substrate processing apparatus according to the present invention. This embodiment is greatly different from the first embodiment in that the speed at which the liquid pool P is sucked, that is, the suction speed is switched to two stages, and other configurations and operations are the same as those in the first embodiment. Are the same. Therefore, the following description will focus on the differences.

When the liquid reservoir P is formed in the same manner as in the first embodiment and the residual liquid droplet L is taken into the liquid reservoir P, the suction speed is first set to a low speed V1, for example, 150 to 250 cm ³ / min. The suction removal of the liquid reservoir P is started at V1 (FIG. 6A). As described above, in the initial stage of the suction removal, by sucking the liquid pool P at the low speed V1, a part of the liquid pool P is separated to the lower surface of the wafer W, the nozzle opening 30b, and the upper surface 30a of the blocking member 30. It can be reliably prevented from remaining. Further, when the liquid pool P is sucked from the lower surface of the wafer W, the nozzle opening 30b, and the upper surface 30a of the blocking member 30, the suction speed is switched to the high speed V2 ((b) in the figure). Thereafter, the suction process is executed at the high speed V2.

As described above, in the second embodiment, since the suction of the liquid pool P is executed at the low speed V1 in the initial stage of suction, the liquid pool P can be reliably sucked. By increasing the suction speed, the time required for the suction process is shortened to improve the throughput. Thus, by increasing the suction speed in multiple stages according to the progress of suction, it is possible to improve the throughput while reliably sucking and removing the liquid reservoir P. In particular, as shown in FIG. 5C, when the inside of the nozzle pipe is sucked, it is not necessary to consider the separation of the liquid pool P. Therefore, a suction speed exceeding 1000 cm ³ / min may be sucked. .

<Third Embodiment>
By the way, in the said embodiment, although it has comprised so that the liquid pool P may be suction-removed using the discharge port 30c of the nozzle 29, as shown to FIG. 7 and FIG. 8, a suction port is provided separately from the discharge port 30c. May be provided at the nozzle tip, and the supply unit and the suction unit may be separately provided.

  FIG. 7 is a view showing a third embodiment of the substrate processing apparatus according to the present invention. FIG. 8 is a view showing a supply mechanism and a suction mechanism provided in the apparatus of FIG. The third embodiment is greatly different from the first embodiment in the following two points. First, two discharge ports 30c are provided at the tip of the nozzle 29, and a suction port 30d is additionally provided. A supply mechanism 33A for supplying chemicals and DIW is connected to the discharge port 30c, whereas a suction mechanism 33B is connected to the suction port 30d. That is, the supply mechanism 33A is obtained by removing the opening / closing valve 83 and the suction part 81 from the supply / suction mechanism 33 of the first embodiment, and the suction mechanism 33B is constituted by the taken-off opening / closing valve 83 and suction part 81. .

  In the third embodiment, the liquid droplet forming process (step S3; second process) and the liquid pool removal process (step S4; third process) are performed as follows to remove the droplet L. ing. More specifically, in step S3, the controller 17 sets the flow rate of the nozzle cleaning liquid and the wafer rotation speed by the supply mechanism 33A, and the nozzle cleaning liquid (DIW) from the discharge port 30c of the lower cleaning nozzle 29 toward the lower surface of the wafer W. To discharge. Thereby, a liquid pool P of the nozzle cleaning liquid (DIW) is formed between the lower surface of the wafer W and the entire surface of the nozzle opening 30b and the upper surface 30a of the blocking member 30 (FIG. 2B).

  Further, after forming the liquid pool P, the supply of the nozzle cleaning liquid by the supply mechanism 33A is stopped, and the suction mechanism 33B is further operated to suck the liquid pool P from the suction port 30d of the nozzle 29 ((c) of FIG. (D)). As a result, the liquid pool P existing between the center of the lower surface of the wafer W and the entire surface of the nozzle opening 30b and the upper surface 30a of the blocking member 30 is removed. Moreover, since the opening dimension D1 of the nozzle opening 30b increases toward the nozzle tip as in the first embodiment, the liquid pool P stored between the lower surface center of the wafer W and the nozzle opening 30b. The capacity of can be increased. Therefore, the difference in the moving speed of the nozzle cleaning liquid located at the outer edge of the liquid reservoir P between the initial stage of suction (FIG. (C)) and the end stage of suction (FIG. (D)) can be reduced. As a result, the nozzle cleaning liquid is not interrupted during suction, and the droplet L is reliably removed from the central portion of the lower surface of the wafer W and the tip of the nozzle (FIG. 5E). Furthermore, it is possible to suppress local oxidation progress and particle adhesion due to the gas-liquid interface remaining at the same location.

  As described above, according to the third embodiment, not only the same effects as the first embodiment but also the following effects can be obtained. That is, the discharge port 30c and the suction port 30d are provided so as to distinguish between the supply path for the nozzle cleaning liquid (second processing liquid) and the suction path for the liquid reservoir P, so that the processing liquid can be mixed reliably. Can be prevented.

<Fourth embodiment>
In the above-described embodiment, a wafer cleaning liquid, a rinsing liquid, or a nozzle cleaning liquid is provided from a nozzle having an opposing surface (the upper surface 30a of the blocking member 30) facing the lower surface of the wafer W at the nozzle tip, from a so-called umbrella-shaped nozzle to the lower surface central portion of the wafer W. The present invention is applied to a substrate processing apparatus that discharges the like. However, the application target of the present invention is not limited to this, and the present invention can be applied to a substrate processing apparatus having an arbitrary nozzle form, for example, a nozzle having no opposing surface.

  FIG. 9 is a diagram showing a fourth embodiment of the substrate processing apparatus according to the present invention. FIG. 10 is a view showing a supply mechanism and a suction mechanism equipped in the apparatus of FIG. This embodiment is largely different from the first embodiment in the following two points. That is, the nozzle tip is not provided with an opposing surface (the upper surface 30a of the blocking member 30) that faces the lower surface of the wafer W, and there is one DIW supply source.

  A nozzle opening 29b is provided at the tip of the lower cleaning nozzle 29 so as to face the center of the lower surface of the wafer W, and the opening size gradually increases toward the tip of the nozzle. In other words, the inner wall surface of the nozzle tip is inclined in a mortar shape downward from the nozzle tip. A processing liquid such as a cleaning liquid or a rinsing liquid can be discharged from the nozzle opening 29b toward the lower surface of the wafer W. On the other hand, a supply / suction mechanism 33C is connected to the other end of the lower cleaning nozzle 29 in communication with the nozzle opening 29b. The configuration of the supply / suction mechanism 33C is basically the same as that of the first embodiment except that only one DIW supply source (35A) for supplying DIW is provided.

  In this embodiment, a wafer cleaning process, a rinse process, a suction process, and a drying process are sequentially performed. That is, unlike the first embodiment, the suction process is performed without forming the liquid pool P after the rinse process. The details of each process are basically performed in the same manner as in the first embodiment. That is, in the wafer cleaning process, a large flow amount of DIW is supplied from the DIW supply source 35A, and a chemical solution is supplied from the first and second chemical solution supply sources 53 and 55, whereby the lower surface of the wafer W is cleaned. The Then, after the supply of the chemical liquid is stopped, DIW becomes a rinse liquid, and the entire wafer W is rinsed. Subsequently, in this embodiment, before the drying process is executed, the suction process is executed as follows.

  FIG. 11 is a view for explaining the suction operation of the substrate processing apparatus of FIG. After the rinsing process, if a part of the rinsing liquid remains as a residual droplet L at the tip of the lower cleaning nozzle 29, the residual droplet L scatters on the lower surface of the wafer W during spin drying, causing watermarks and streaks. This is one of the causes of the generation of shaped particles (see FIG. 11A).

  Therefore, in this embodiment, by operating the suction unit 81 before the drying process is performed, the residual liquid droplet L adhering to the nozzle tip is sucked and removed together with the liquid component in the pipe 31 (FIG. 11 ( b)). Here, since the nozzle tip is inclined in a mortar shape downward (from the suction source 81 side) from the nozzle tip, the residual liquid droplet L adhering to the nozzle tip is affected by gravity and directed downward of the nozzle. Easier to move. Therefore, by operating the suction part 81, not only the liquid component in the pipe 31 but also the residual liquid droplet L adhering to the nozzle tip part can be sucked easily and reliably.

  As described above, in this embodiment, since the nozzle opening 29b is provided at the nozzle tip so that the opening size of the nozzle opening 29b increases toward the nozzle tip, residual droplets adhering to the nozzle tip. L can be easily and reliably removed. As a result, generation of particles or the like due to the residual droplets L during spin drying can be suppressed.

<Others>
The present invention is not limited to the above-described embodiment, and various modifications other than those described above can be made without departing from the spirit of the present invention. For example, in the first to third embodiments, the opposing surface (the upper surface 30a of the blocking member 30) that is opposed in parallel to the lower surface of the wafer W is provided so as to surround the nozzle opening 30b. As shown in FIG. 12, the nozzle opening 30 b may be provided so that the opening extends from the discharge port 30 c provided on the inner bottom surface to the outer edge of the blocking member 30. Even if comprised in this way, the effect similar to the said 1st-3rd embodiment is acquired.

  Further, in the first and second embodiments, the blocking member 30 is provided with the discharge port 30c, and in the third embodiment, the blocking member 30 is provided with the two discharge ports 30c and the suction port 30d. The number, shape, etc. are not limited to the above embodiment, but are arbitrary.

  In the fourth embodiment, the suction process is performed after the rinsing process. However, as in the first to third embodiments, the liquid pool forming process and the liquid pool removing process are performed after the rinsing process, and the nozzle tip portion Not only that, the residual liquid droplet L adhering to the center of the lower surface of the wafer W may be removed.

  As described above, in this embodiment, the present invention is applied to the substrate processing apparatus that cleans the upper and lower surfaces of the wafer W, which is a kind of substrate. However, the application target of the present invention is not limited to this, and the nozzle is disposed away from the lower surface of the substrate, and the processing liquid is discharged toward the center of the lower surface of the rotating substrate, whereby the lower surface of the substrate. The present invention can be applied to all substrate processing apparatuses that perform predetermined processing (for example, cleaning processing, etching processing, development processing, rinsing processing, etc.) by supplying a processing liquid to the whole.

1 is a diagram showing a first embodiment of a substrate processing apparatus according to the present invention. It is a figure which shows the front-end | tip part of a lower washing nozzle. It is a block diagram which shows schematic structure of a supply and suction mechanism. It is a flowchart which shows operation | movement of the substrate processing apparatus of FIG. It is a figure which shows typically operation | movement of the substrate processing apparatus of FIG. It is a figure which shows operation | movement of 2nd Embodiment of the substrate processing apparatus concerning this invention. It is a figure which shows 3rd Embodiment of the substrate processing apparatus concerning this invention. It is a figure which shows the supply mechanism and suction mechanism with which the apparatus of FIG. 7 is equipped. It is a figure which shows 4th Embodiment of the substrate processing apparatus concerning this invention. It is a figure which shows the supply mechanism and suction mechanism with which the apparatus of FIG. 9 is equipped. It is a figure explaining the suction process of the substrate processing apparatus of FIG. It is a figure which shows the deformation | transformation form of a lower washing nozzle.

Explanation of symbols

29 ... Lower cleaning nozzle 29b ... Nozzle opening 30 ... Blocking member 30a ... Upper surface (opposing surface)
30b ... Nozzle opening 30c ... Discharge port 30d ... Suction port 33, 33C ... Supply / suction mechanism (supply unit, suction unit)
33A ... Supply mechanism (supply means)
33B ... Suction mechanism (suction means)
L: (Residual) droplet P: Liquid reservoir V1, V2: Suction speed W: Wafer (substrate)

Claims (14)

In the substrate processing apparatus for supplying the first processing liquid to the entire lower surface of the substrate and performing a predetermined process by discharging the first processing liquid toward the lower surface central portion of the substrate while rotating the substrate.
An opening that is open toward the lower surface of the substrate is provided at the tip, and a nozzle that is disposed while separating the tip from the substrate;
By supplying the second processing liquid to the nozzle, the second processing liquid is discharged from the nozzle opening toward the lower surface of the substrate that has undergone the processing, and the lower surface center portion of the substrate, the nozzle tip portion, A supply means for forming a liquid reservoir between,
A suction means for sucking the liquid pool from the nozzle opening and removing the liquid pool from between the lower surface center portion of the substrate and the nozzle tip;
The substrate processing apparatus, wherein the nozzle opening is provided at the nozzle tip so that an opening size of the nozzle opening increases toward the tip of the nozzle. The nozzle tip is provided with a discharge port so as to communicate with the nozzle opening and to face the center of the lower surface of the substrate.
The substrate processing apparatus according to claim 1, wherein the supply unit supplies the second processing liquid to the nozzle and discharges the second processing liquid from the discharge port toward the center of the lower surface of the substrate.   The substrate processing apparatus according to claim 2, wherein the suction unit sucks and removes the liquid pool from the discharge port. The nozzle is provided so as to surround the nozzle opening at the nozzle tip, and has a facing surface facing the lower surface of the substrate,
4. The liquid reservoir is formed between the entire surface of the nozzle opening and the opposed surface of the nozzle and a central portion of the lower surface of the substrate by discharging the second processing liquid from the discharge port. 5. Substrate processing equipment. The nozzle tip is provided with a suction port so as to communicate with the nozzle opening,
The substrate processing apparatus according to claim 2, wherein the suction means sucks and removes the liquid pool from the suction port. The nozzle is provided so as to surround the nozzle opening at the nozzle tip, and has a facing surface facing the lower surface of the substrate,
The substrate processing according to claim 5, wherein the liquid pool is formed between the entire surface of the nozzle opening and the opposed surface of the nozzle and the center of the lower surface of the substrate by discharging the second processing liquid from the discharge port. apparatus.   The substrate processing apparatus according to claim 5, wherein the suction port is provided on an inner bottom surface of the nozzle opening.   The substrate processing apparatus according to claim 1, wherein the supply unit supplies a liquid having the same component as the first processing liquid to the nozzle as the second processing liquid.   The substrate processing apparatus according to claim 1, wherein the supply unit supplies a nozzle cleaning liquid for cleaning the nozzle to the nozzle as the second processing liquid. By discharging the first processing liquid toward the lower surface of the substrate from the nozzle opening provided at the nozzle tip of the substrate processing apparatus according to any one of claims 1 to 9, while rotating the substrate, A first step of supplying the first treatment liquid to the entire lower surface of the substrate;
A second step of discharging a second treatment liquid from the nozzle opening toward the lower surface of the substrate to form a liquid pool between the lower surface central portion of the substrate and the nozzle tip;
A substrate processing method comprising: a third step of sucking the liquid reservoir from the nozzle opening and removing the liquid reservoir from between a lower surface center portion of the substrate and the nozzle tip.   The substrate processing method according to claim 10, wherein in the second step, the liquid pool is formed while rotating the substrate.   The substrate processing method according to claim 10 or 11, wherein, in the third step, the liquid pool is removed while the suction speed of the liquid pool is accelerated in multiple stages.   The substrate processing method according to claim 10, wherein in the third step, the liquid pool is sucked while rotating the substrate. In the substrate processing apparatus for supplying the processing liquid to the entire lower surface of the substrate and performing a predetermined process by discharging the processing liquid toward the center of the lower surface of the substrate while rotating the substrate,
An opening is provided at the tip so as to face the center of the lower surface of the substrate, and the nozzle is disposed while separating the tip from the substrate;
Supply means for supplying the processing liquid to the entire lower surface of the substrate by discharging the processing liquid from the nozzle opening by supplying the processing liquid to the nozzle;
A suction means for sucking the processing liquid remaining in the nozzle from the nozzle opening;
The substrate processing apparatus, wherein the nozzle opening is provided in the nozzle tip so that an opening size of the nozzle opening increases toward the tip of the nozzle.

Images