JP2009238793A - Substrate treatment method, and substrate treatment device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method can prevent adhesion of particles and occurrence of a watermark on a surface of a substrate without using an atmosphere shielding plate nor relying on a method of running a gas nozzle while supplying a drying gas to the substrate surface from the gas nozzle, in a method of replacing moisture on the surface of the substrate with an organic solvent, and thereafter drying the substrate by evaporating the organic solvent on the surface of the substrate. <P>SOLUTION: When an organic solvent is supplied from a liquid supply nozzle 62 to a surface of a substrate W held to a spin chuck 10 to replace moisture on the surface of the substrate with the organic solvent, and thereafter the substrate is dried by evaporating the organic solvent on the surface of the substrate, a gas having a specific gravity larger than that of steam is supplied into a cup 44 from a gas supply nozzle 64. By filling the inside of the cup with the gas having the specific gravity larger than that of steam, steam is removed from the inside of the cup, and humidity on the surface of the substrate in the cup is lowered. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a method of drying various substrates such as semiconductor wafers, glass substrates for liquid crystal display devices (LCD) / plasma displays (PDP), glass / ceramic substrates for magnetic / optical disks, electronic device substrates, etc. The present invention relates to a substrate processing method and a substrate processing apparatus for supplying an organic solvent to the surface of a substrate, replacing the moisture on the surface of the substrate with the organic solvent, and evaporating the organic solvent on the surface of the substrate to dry the substrate.

  2. Description of the Related Art In a substrate wet cleaning apparatus, an organic solvent such as isopropyl alcohol (IPA) is supplied to a substrate after a cleaning process to dry the substrate. In the single-plate wet cleaning apparatus, as a drying method using IPA, there is a rotagony drying method using the Marangoni effect (convection effect). In this drying method, while the substrate is held in a horizontal posture and rotated about the vertical axis, the discharge port is discharged from the center position of the substrate to the peripheral position while discharging pure water from the discharge port of the pure water discharge nozzle to the surface of the substrate. At the same time, the vapor jet nozzle is scanned so as to follow the pure water discharge nozzle while jetting IPA vapor from the jet port of the vapor jet nozzle to the surface of the substrate. As a result, on the surface of the substrate, the drying starts from the portion where the IPA vapor is sprayed, the drying region gradually expands from the central portion to the peripheral portion, and finally the entire surface is dried. In this drying method, the substrate is dried by moving pure water supplied on the substrate toward the outside of the substrate by the Marangoni effect by supplying centrifugal force and IPA vapor.

  Also, after supplying the IPA liquid to the surface of the substrate and replacing the moisture on the surface of the substrate with IPA, the IPA on the surface of the substrate is evaporated, and the substrate is rotated around the vertical axis in the horizontal plane. The method of drying is also performed. Thus, the drying method using IPA is effective in preventing pattern collapse, which has become a problem today, because the surface tension of IPA is smaller than that of water. However, when IPA is supplied onto the substrate and the substrate is dried by spin dry processing, countless particles adhere to the surface of the substrate or watermarks are generated. This is because the humidity on the substrate surface is high (the amount of water vapor contained in the atmosphere is large).

In order to prevent the inconveniences described above, an atmosphere blocking plate is provided above the spin base that holds the substrate in a horizontal position so as to face the spin base, and the atmosphere blocking plate is close to the spin base and is positioned above the substrate. The spin base and the atmosphere blocking plate are rotated so as to cover, and nitrogen gas is sprayed on the surface of the substrate, and the periphery of the substrate is subjected to a spin dry treatment with a nitrogen gas atmosphere, thereby suppressing the generation of watermarks, A method of preventing contaminants from adhering to the substrate surface has been disclosed (for example, see Patent Document 1). Further, while rotating the substrate held by the spin chuck, the IPA liquid is supplied from the liquid nozzle to the substrate surface, and a drying gas such as nitrogen gas is supplied from the gas nozzle to the substrate surface, and both nozzles are placed at the center of the substrate. A method of reducing the humidity near the surface of the substrate by scanning from the edge to the periphery is also disclosed (see, for example, Patent Document 2).
JP 2002-273360 A (page 3, FIG. 9) JP 2007-36180 A (page 10, page 12, page 14, FIG. 1 to FIG. 4)

  However, the method using the atmosphere blocking plate complicates the apparatus configuration such as a support mechanism, a rotation drive mechanism, and a control mechanism of the atmosphere blocking plate, and the control operation is troublesome. In addition, the method of supplying the drying gas from the gas nozzle to the surface of the substrate while scanning the gas nozzle together with the liquid nozzle also complicates the apparatus configuration such as the support / movement mechanism of the gas nozzle, and the liquid is rotated while rotating the substrate. There is a problem that the control operation is troublesome for scanning the nozzle and the gas nozzle.

  The present invention has been made in view of the above circumstances, and after supplying an organic solvent to the surface of the substrate and replacing the moisture on the surface of the substrate with the organic solvent, the organic solvent on the surface of the substrate is In the drying method of evaporating the solvent and drying the substrate, without using the atmosphere blocking plate, and without scanning the gas nozzle while supplying the drying gas from the gas nozzle to the surface of the substrate, Providing a substrate processing method that can prevent particles from adhering to the surface of the substrate and the generation of watermarks, has a simple apparatus configuration, and has a simple control operation, and is suitable for the processing method. It is an object of the present invention to provide a substrate processing apparatus that can be implemented in the first place.

  According to the first aspect of the present invention, after supplying an organic solvent to the surface of the substrate to which moisture has adhered and replacing the moisture on the surface of the substrate with the organic solvent, the organic solvent on the surface of the substrate is evaporated to obtain a substrate. In the substrate processing method for drying the substrate, when the organic solvent on the surface of the substrate is evaporated, the substrate is filled with a gas having a specific gravity greater than that of water vapor.

  According to a second aspect of the present invention, in the processing method according to the first aspect, the cryogenic nitrogen gas, the IPA vapor or the hydrofluoroether (HFE) vapor is used as the gas having a specific gravity larger than the water vapor filled around the substrate. It is characterized by using.

  The invention according to claim 3 is characterized in that, in the processing method according to claim 1 or 2, IPA is used as the organic solvent supplied to the surface of the substrate.

  The invention according to claim 4 is the processing method according to claim 1 or claim 2, wherein IPA and HFE are used as the organic solvent to be supplied to the surface of the substrate, and a mixture thereof is supplied to the surface of the substrate. Alternatively, the HFE is supplied to the substrate surface after the IPA is supplied to the substrate surface.

  According to a fifth aspect of the present invention, in the processing method according to any one of the first to fourth aspects, the substrate is held in a horizontal posture and the vertical axis is maintained following the step of evaporating the organic solvent on the surface of the substrate. A spin dry process of rotating around is performed.

  The invention according to claim 6 is the processing method according to any one of claims 1 to 5, wherein the substrate is held in a horizontal posture inside the cup, and a gas having a specific gravity greater than water vapor is supplied into the cup. Then, the inside of the cup is filled with the gas.

  The invention according to claim 7 is characterized in that, in the processing method according to claim 6, a gas having a specific gravity greater than that of water vapor is supplied into the cup simultaneously with supplying the organic solvent to the surface of the substrate.

  According to an eighth aspect of the present invention, in the processing method according to the sixth or seventh aspect, the cup is disposed in the chamber, and the substrate is horizontally placed in the cup before the organic solvent is supplied to the surface of the substrate. A process of rinsing the substrate by supplying pure water to the surface of the substrate while maintaining the posture and rotating around the vertical axis is performed. During the rinsing process, the upper surface opening from the upper part of the chamber into the cup is opened. Clean air is supplied through and the inside of the cup is evacuated from the bottom thereof, and when the organic solvent on the surface of the substrate is evaporated, the exhaust from the inside of the cup is restricted or stopped, and the chamber The interior is evacuated, and a gas having a specific gravity greater than that of water vapor is supplied into the cup by a flow rate equal to or higher than the exhaust flow rate from the inside of the cup to fill the inside of the cup with the gas. To.

  The invention according to claim 9 is the processing method according to claim 8, characterized in that the air in the clean room or clean dry air is supplied from the upper part of the chamber into the cup.

  The invention according to claim 10 includes a substrate holding unit that holds the substrate in a horizontal posture, and is supported by the substrate holding unit that is supported so as to be rotatable about a vertical axis and has an upper surface opened. A cup disposed so as to surround the periphery of the substrate; a rotating unit that rotates the substrate holding unit; an organic solvent supply unit that supplies an organic solvent to a surface of the substrate held by the substrate holding unit; and the cup In a substrate processing apparatus, comprising: a first exhaust means for exhausting the interior from the bottom; a chamber surrounding the periphery of the cup; and a second exhaust means for exhausting the interior of the chamber. Gas supply means for supplying a gas having a higher specific gravity is further provided, and at the same time or after the organic solvent is supplied to the surface of the substrate by the organic solvent supply means, The supplied large gas specific gravity than water vapor into the cup, the cup when evaporating the organic solvent on the surface of the substrate, characterized in that to be filled with a large gas specific gravity than water vapor.

  The invention according to claim 11 is the processing apparatus according to claim 10, wherein when the organic solvent on the surface of the substrate is evaporated, the exhaust from the cup by the first exhaust means is limited or stopped. The chamber is evacuated by the second evacuation unit, and a gas having a specific gravity greater than that of water vapor is supplied into the cup by the gas supply unit by a flow rate equal to or higher than the flow rate of the exhaust from the cup by the first evacuation unit. It is characterized by doing so.

  According to the substrate processing method of the first aspect of the present invention, when the organic solvent on the surface of the substrate is evaporated, the substrate is filled with a gas having a specific gravity greater than that of the water vapor, so that the water vapor is generated from the periphery of the substrate. This eliminates the humidity on the substrate surface. Therefore, when the organic solvent on the surface of the substrate evaporates, it is possible to suppress the adhesion of particles or the generation of a watermark on the surface of the substrate. Further, since the atmosphere blocking plate is not used or the gas nozzle is scanned while supplying the drying gas from the gas nozzle to the surface of the substrate, the apparatus configuration is simple and the control operation is simplified.

  In the processing method according to the second aspect of the present invention, the substrate is filled with the cryogenic nitrogen gas, the IPA vapor, or the HFE vapor so that the water vapor can be excluded from the substrate.

  In the processing method of the invention according to claim 3, after the IPA is supplied to the surface of the substrate and the moisture on the surface of the substrate is replaced with IPA, the IPA on the surface of the substrate evaporates to dry the substrate. be able to.

  In the processing method of the invention according to claim 4, after IPA and HFE are supplied to the surface of the substrate and the moisture on the surface of the substrate is replaced with IPA, the IPA and HFE on the surface of the substrate evaporate, The substrate can be dried.

  In the processing method according to the fifth aspect of the present invention, the time required for drying the substrate can be shortened by subjecting the substrate to spin dry processing following the step of evaporating the organic solvent on the surface of the substrate.

  In the processing method of the invention according to claim 6, when the inside of the cup is filled with a gas having a specific gravity greater than that of the water vapor, the water vapor is excluded from the inside of the cup, and the humidity on the surface of the substrate held inside the cup is lowered. can do.

  In the processing method of the invention according to claim 7, since the gas having a specific gravity larger than the water vapor is supplied into the cup simultaneously with the supply of the organic solvent to the surface of the substrate, the organic solvent on the surface of the substrate is subsequently evaporated. Therefore, it is possible to reliably fill a gas having a specific gravity greater than that of water vapor around the substrate.

  In the processing method according to the eighth aspect of the present invention, clean air is supplied from the upper part of the chamber into the cup during the rinsing process performed before supplying the organic solvent to the surface of the substrate. Can be rinsed. On the other hand, when evaporating the organic solvent on the surface of the substrate, the cup can be surely filled with a gas having a specific gravity greater than that of water vapor.

  In the processing method according to the ninth aspect of the present invention, the rinsing process can be performed in a clean atmosphere by supplying the air in the clean room or clean dry air from the upper part of the chamber into the cup.

  When the substrate processing apparatus according to the tenth and eleventh aspects of the present invention is used, the processing method according to the first to ninth aspects of the present invention can be suitably implemented to achieve the above-described effects.

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the best embodiment of the present invention will be described with reference to the drawings.
FIG. 1 is a front view showing an example of a schematic configuration of a substrate processing apparatus used for carrying out a substrate processing method according to the present invention, and showing a principal part of the apparatus in cross section.

  The substrate processing apparatus includes a spin chuck 10 that holds a substrate W in a horizontal posture. The spin chuck 10 includes a disk-shaped spin base 12 and a plurality of chuck pins that are implanted in the circumferential direction on the upper surface side peripheral portion of the spin base 12 so as to grip the peripheral portion of the substrate W. 14. A through hole 16 is formed at the center of the spin base 12, and a cylindrical rotation support shaft 18 is suspended from the lower surface side of the spin base 12 so as to communicate with the through hole 16. A covered cylindrical casing 22 fixed on the base plate 20 is disposed around the cylindrical rotation support shaft 18. The cylindrical rotation support shaft 18 is supported by the base plate 20 and the casing 22 so as to be rotatable around the vertical axis via bearings 24 and 26, respectively. A motor 28 is disposed in the casing 22 so as to be fixed on the base plate 20. A driving pulley 30 is fixed to the rotating shaft of the motor 28, while a driven pulley 32 is fitted to the cylindrical rotating spindle 18, and a belt 34 is attached to the driving pulley 30 and the driven pulley 32. It is laid around. By these mechanisms, the cylindrical rotation support shaft 18 is rotated, and the substrate W held by the spin chuck 10 fixed to the upper end of the cylindrical rotation support shaft 18 is rotated around the vertical axis in the horizontal plane. In addition, a nozzle 36 that is connected to the cleaning liquid supply channel is inserted in the hollow portion of the cylindrical rotary spindle 18. A cleaning liquid such as pure water is discharged from the upper end discharge port of the nozzle 36 toward the center of the lower surface of the substrate W held by the spin chuck 10.

  Around the casing 22, three cylindrical partition walls 38 a, 38 b, 38 c arranged concentrically so as to surround the casing 22, and an outer periphery of the cylindrical portion of the casing 22 formed integrally with the cylindrical partition walls 38 a, 38 b, 38 c A bottom wall 40 connected to the lower end of the surface is fixedly disposed on the base plate 20. And three space formed by the combination of each cylindrical partition wall 38a, 38b, 38c, the casing 22, and the bottom wall part 40 becomes drainage tank 42a, 42b, 42c, respectively. Further, above these drainage tanks 42a, 42b and 42c, a splash guard 44 constituting a cup having a large upper surface is disposed so as to surround the periphery of the substrate W held by the spin chuck 10. ing. The splash guard 44 is held so as to be movable up and down in the vertical direction along the axial direction of the cylindrical rotary support shaft 18 and is reciprocated in the vertical direction by an elevator mechanism (not shown). The splash guard 44 includes two guards arranged concentrically with the spin chuck 10 from the radially inner side toward the outer side. And by raising and lowering the splash guard 44 stepwise by the raising and lowering mechanism, the chemical liquid and the rinsing liquid scattered from the rotating substrate W to the surroundings can be separated and drained.

  Further, an exhaust hole 46 formed in the bottom wall 40 and the base plate 20 is provided at the bottom of the drainage tank 42a, and an exhaust pipe connected to the exhaust hole 46 by a flow path to an exhaust device (not shown). 48 is connected in communication. With this configuration, various processes such as chemical cleaning, rinsing, replacement, and drying of the substrate W surrounded by the splash guard 44 and held by the spin chuck 10 through the exhaust pipe 48 are performed. The processing space 52 can be evacuated. Further, an exhaust adjustment mechanism 50 is inserted in the exhaust pipe 48, and the exhaust flow rate from the processing space 52 can be adjusted by the exhaust adjustment mechanism 50.

  Above the substrate W held by the spin chuck 10, a chemical solution supply nozzle 54 for supplying a chemical solution such as hydrofluoric acid (HF) to the surface of the substrate W, and a rinse solution such as pure water to the surface of the substrate W are supplied. A rinse liquid supply nozzle 56 is disposed. The chemical liquid supply nozzle 54 and the rinse liquid supply nozzle 56 are attached to a nozzle arm 58. The chemical liquid supply nozzle 54 is connected to a chemical liquid supply unit through a chemical liquid supply pipe (not shown), and the rinse liquid supply nozzle 56 is illustrated. The rinsing liquid supply unit is connected to the rinsing liquid supply unit through the rinsing liquid supply pipe. The nozzle arm 58 is supported by the nozzle arm moving mechanism 60 in a cantilever manner. Then, by driving and controlling the nozzle arm moving mechanism 60, the nozzle arm 58 is rotated in the horizontal plane and moved up and down, so that the chemical liquid supply nozzle 54 and the rinse liquid supply nozzle 56 are held on the substrate W held by the spin chuck 10. It is possible to move between a discharge area above and a standby position retracted laterally from the discharge area. Further, by driving and controlling the nozzle arm moving mechanism 60 and rotating the nozzle arm 58 in a horizontal plane, the chemical solution supply nozzle 54 and the rinse liquid supply nozzle 56 are disposed in the discharge region, and each discharge port is the center of the substrate W. It is possible to reciprocate between a position facing the part and a position facing the peripheral edge of the substrate W.

  Further, above the substrate W held by the spin chuck 10, a processing space 52 surrounded by a liquid supply nozzle 62 for supplying an organic solvent such as an IPA liquid and an HFE liquid to the surface of the substrate W and a splash guard 44. A gas supply nozzle 64 for supplying a gas having a higher specific gravity than water vapor, for example, cryogenic nitrogen gas, IPA vapor, HFE vapor, or the like is disposed. The liquid supply nozzle 62 and the gas supply nozzle 64 are attached to a nozzle arm 66, and the liquid supply nozzle 62 is connected to the organic solvent supply unit through a liquid supply pipe (not shown), and the gas supply nozzle 64 is shown in the figure. It is connected to a supply unit such as IPA vapor and HFE vapor through a gas supply pipe. The nozzle arm 66 is supported by the nozzle arm moving mechanism 68 in a cantilever manner. Then, by driving and controlling the nozzle arm moving mechanism 68, the nozzle arm 66 is rotated in the horizontal plane and moved up and down, so that the liquid supply nozzle 62 is moved to a discharge position above the substrate W held by the spin chuck 10. A configuration in which the gas supply nozzle 64 is moved to the ejection position of the processing space 52 surrounded by the splash guard 44 and can be returned to the standby position retracted laterally from the ejection position and the ejection position. It has become.

  The processing unit configured as described above is disposed in the chamber 70. A fan filter unit (FFU) 72 is provided on the ceiling portion of the chamber 70. The FFU 72 has a fan 74 and a filter 76, the air taken in from the outside by the fan 74 is cleaned by the filter 76, and the clean air (clean air) is supplied to the processing space 52 surrounded by the splash guard 44. To do. An exhaust hole 78 is provided in the lower part of the chamber 70, and an exhaust pipe 80 connected to a flow path of an exhaust device (not shown) is connected to the exhaust hole 78. An exhaust adjustment mechanism 82 is inserted in the exhaust pipe 80. With this configuration, the inside of the chamber 70 can be exhausted through the exhaust pipe 80, and the exhaust flow rate from the inside of the chamber 70 can be adjusted by the exhaust adjustment mechanism 82.

Next, an example of a method for processing a substrate using the substrate processing apparatus having the above configuration shown in FIG. 1 will be described based on the schematic diagram shown in FIG.
First, as shown in FIG. 2 (a), hydrofluoric acid is supplied from the chemical solution supply nozzle 54 to the surface of the substrate W while rotating the substrate W held on the spin chuck 10 by a normal method. The surface of W is subjected to a chemical cleaning process. Following this cleaning process, pure water is supplied from the rinse liquid supply nozzle 56 to the surface of the substrate W to rinse the surface of the substrate W. During the chemical cleaning and rinsing process, the atmosphere in the clean room is supplied from the FFU 72 into the chamber 70. Further, exhaust (for example, −10 Pa to −20 Pa) adjusted to a small flow rate by the exhaust adjustment mechanism 82 is performed from the inside of the chamber 70. During the chemical cleaning and rinsing process, the treatment space 52 surrounded by the splash guard 44 (hereinafter referred to as “cup 44”) has an increased chemical mist concentration and a high humidity (in the atmosphere). The amount of water vapor contained increases. Therefore, exhaust (for example, −300 Pa or more) adjusted to a large flow rate by the exhaust adjustment mechanism 50 is performed from the cup 44. As a result, the clean air taken into the chamber 70 from the FFU 72 flows into the cup 44, and chemical mist and water vapor are discharged from the cup 44 together with the exhaust, and the humidity rises in the processing space 52 around the substrate W. It is suppressed.

  When the rinsing process of the substrate W is finished, the substrate W held on the spin chuck 10 is rotated at a low speed, for example, a speed of 50 rpm or less, and the substrate W is fed from the liquid supply nozzle 62 as shown in FIG. A 100% concentration IPA solution that is not diluted with an organic solvent, such as water, is supplied to the center of the surface. As a result, the moisture is replaced with IPA at the center of the surface of the substrate W, the replacement region expands toward the peripheral edge of the substrate W, and the moisture is replaced with IPA over the entire surface of the substrate W. When the replacement with the IPA is completed, the supply of the IPA liquid is stopped and the IPA on the surface of the substrate W is evaporated. Then, the substrate W held on the spin chuck 10 is rotated at a high speed, for example, 300 rpm to 4000 rpm, and spin-dried to dry the substrate W. Also in this drying process, the air in the clean room is supplied from the FFU 72 into the chamber 70 continuously from the chemical cleaning / rinsing process.

  In the drying step described above, simultaneously with the start of supply of the IPA liquid to the surface of the substrate W, a gas having a specific gravity greater than that of water vapor, such as cryogenic nitrogen gas, IPA vapor, HFE vapor, etc., from the gas supply nozzle 64 into the cup 44. Supply gas and steam. Further, when the rinsing process is completed, the exhaust adjustment mechanism 50 switches so that a small flow rate of exhaust (for example, −10 Pa to −20 Pa) is performed from the inside of the cup 44, and on the other hand, the exhaust adjustment mechanism 82 increases the exhaust from the chamber 70. Switching is performed so that the exhaust of the flow rate (for example, −300 Pa or more) is performed. Then, by setting the flow rate of the gas or steam supplied from the gas supply nozzle 64 into the cup 44 to a flow rate equal to or higher than the exhaust flow rate from the inside of the cup 44, Steam gradually accumulates, and the inside of the cup 44 is filled with gas or steam having a specific gravity greater than that of steam. For this reason, water vapor having a specific gravity lower than that of the gas or steam is excluded from the cup 44, and the humidity in the cup 44 is lowered. Thus, since IPA is evaporated and dried from the surface of the substrate W in an atmosphere with low humidity, it is possible to prevent particles from adhering to the surface of the substrate W and the generation of watermarks.

  In the above-described embodiment, the IPA liquid is used as the organic solvent supplied to the surface of the substrate W. However, a mixed liquid of IPA and HFE is used, or first, an IPA liquid that is soluble in water is supplied to the substrate surface. Alternatively, after the moisture on the surface of the substrate is replaced with IPA, the HFE solution dissolved in IPA may be supplied to the substrate surface to evaporate the IPA and HFE on the surface of the substrate. Thus, by using the HFE liquid, the substrate can be dried more efficiently. Alternatively, an IPA solution or HFE solution diluted with water may be used. In the above embodiment, the gas having a specific gravity higher than the water vapor is supplied into the cup 44 simultaneously with the start of the supply of the IPA liquid to the surface of the substrate W. However, after the IPA liquid is supplied to the surface of the substrate W, You may make it start supply of gas with larger specific gravity than water vapor | steam. Further, in the above-described embodiment, the atmosphere in the clean room is supplied from the FFU 72 into the chamber 70. However, clean dry air may be supplied into the chamber 70, whereby a processing space around the substrate W is obtained. The humidity increase at 52 can be further suppressed.

  In the embodiment described above, the exhaust adjustment mechanism 50 restricts the exhaust from the cup 44 in the drying process. However, the exhaust from the cup 44 may be completely stopped. Furthermore, nitrogen gas or cooling nitrogen gas may be supplied onto the surface of the substrate during the spin drying process, and in this case, the drying time of the substrate is further shortened. Note that the spin dry process of rotating the substrate at a high speed may not be performed if unnecessary.

It is a front view which shows one example of schematic structure of the substrate processing apparatus used in order to implement the substrate processing method concerning this invention, and shows the principal part of the apparatus in a cross section. It is a schematic diagram for demonstrating one example of the method of processing a board | substrate using the substrate processing apparatus shown in FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Spin chuck 18 Cylindrical rotation spindle 22 Casing 28 Motor 42a, 42b, 42c Drain tank 44 Splash guard (cup)
46, 78 Exhaust hole 48, 80 Exhaust pipe 50, 82 Exhaust adjustment mechanism 52 Processing space 54 Chemical solution supply nozzle 56 Rinse solution supply nozzle 58, 66 Nozzle arm 60, 68 Nozzle arm 62 Liquid supply nozzle 64 for supplying organic solvent From water vapor Gas supply nozzle for supplying gas having a large specific gravity 70 Chamber 72 Fan filter unit W substrate

Claims (11)

In the substrate processing method of supplying an organic solvent to the surface of the substrate to which moisture has adhered, replacing the moisture on the surface of the substrate with the organic solvent, and evaporating the organic solvent on the surface of the substrate to dry the substrate.
A substrate processing method comprising filling a gas having a specific gravity greater than water vapor around a substrate when evaporating an organic solvent on the surface of the substrate. The substrate processing method according to claim 1,
The substrate processing method characterized in that the gas having a specific gravity larger than water vapor filled around the substrate is cryogenic nitrogen gas, isopropyl alcohol vapor or hydrofluoroether vapor. In the substrate processing method of Claim 1 or Claim 2,
An organic solvent supplied to the surface of a substrate is isopropyl alcohol. In the substrate processing method of Claim 1 or Claim 2,
The organic solvent supplied to the surface of the substrate is isopropyl alcohol and hydrofluoroether, and a mixture thereof is supplied to the substrate surface, or after supplying isopropyl alcohol to the substrate surface, the hydrofluoroether is supplied to the substrate surface. A substrate processing method comprising: supplying a substrate. In the substrate processing method in any one of Claims 1 thru | or 4,
Subsequent to the step of evaporating the organic solvent on the surface of the substrate, the substrate is held in a horizontal posture and rotated about the vertical axis. In the substrate processing method in any one of Claims 1 thru | or 5,
A substrate processing method, wherein a substrate is held in a horizontal posture inside a cup, and a gas having a specific gravity greater than water vapor is supplied into the cup to fill the cup with the gas. The substrate processing method according to claim 6,
A substrate processing method, wherein a gas having a specific gravity greater than water vapor is supplied into the cup simultaneously with the supply of the organic solvent to the surface of the substrate. In the substrate processing method of Claim 6 or Claim 7,
The cup is disposed in the chamber, and before supplying the organic solvent to the surface of the substrate, pure water is supplied to the surface of the substrate while holding the substrate in the cup in a horizontal posture and rotating around the vertical axis. A process of rinsing the substrate is performed, and during the rinsing process, clean air is supplied from the top of the chamber into the cup through the top opening, and the cup is evacuated from the bottom,
When evaporating the organic solvent on the surface of the substrate, the exhaust from the inside of the cup is restricted or stopped, and the inside of the chamber is exhausted, so that the cup has a flow rate equal to or higher than the exhaust flow rate from the inside of the cup. A substrate processing method, wherein a gas having a specific gravity greater than water vapor is supplied into the cup, and the inside of the cup is filled with the gas. The substrate processing method according to claim 8,
2. The substrate processing method according to claim 1, wherein the clean air supplied from the upper part of the chamber into the cup is an air in a clean room or clean dry air. A substrate holding means for holding the substrate in a horizontal position and supported rotatably around a vertical axis;
A cup having an upper surface opened and disposed so as to surround the periphery of the substrate held by the substrate holding means;
Rotating means for rotating the substrate holding means;
An organic solvent supply means for supplying an organic solvent to the surface of the substrate held by the substrate holding means;
First exhaust means for exhausting the cup from its bottom;
A chamber surrounding the periphery of the cup;
A second exhaust means for exhausting the chamber;
In a substrate processing apparatus comprising:
A gas supply means for supplying a gas having a specific gravity greater than water vapor into the cup;
At the same time as or after the organic solvent is supplied to the surface of the substrate by the organic solvent supply means, a gas having a specific gravity higher than that of water vapor is supplied into the cup by the gas supply means. A substrate processing apparatus characterized in that when a solvent is evaporated, the inside of a cup is filled with a gas having a specific gravity greater than that of water vapor. The substrate processing apparatus according to claim 10, wherein
When evaporating the organic solvent on the surface of the substrate, exhaust from the inside of the cup by the first exhaust means is restricted or stopped, and the interior of the chamber is exhausted by the second exhaust means. A substrate processing apparatus, wherein a gas having a specific gravity greater than that of water vapor is supplied into the cup by the gas supply means by a flow rate equal to or higher than an exhaust flow rate from the inside of the cup by one exhaust means.

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