JP2009200328A - 真空処理装置 - Google Patents
真空処理装置 Download PDFInfo
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- JP2009200328A JP2009200328A JP2008041668A JP2008041668A JP2009200328A JP 2009200328 A JP2009200328 A JP 2009200328A JP 2008041668 A JP2008041668 A JP 2008041668A JP 2008041668 A JP2008041668 A JP 2008041668A JP 2009200328 A JP2009200328 A JP 2009200328A
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- 238000012545 processing Methods 0.000 title claims abstract description 253
- 239000007789 gas Substances 0.000 claims abstract description 72
- 238000012546 transfer Methods 0.000 claims description 114
- 239000000758 substrate Substances 0.000 claims 1
- 238000012423 maintenance Methods 0.000 abstract description 17
- 238000007689 inspection Methods 0.000 abstract description 9
- 238000000034 method Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 30
- 238000005530 etching Methods 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 8
- 238000004380 ashing Methods 0.000 description 5
- 238000009434 installation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000003507 refrigerant Substances 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/6735—Closed carriers
- H01L21/67389—Closed carriers characterised by atmosphere control
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
【解決手段】真空容器内の処理室内に配置した試料をこの処理室内に形成したプラズマを用いて処理する真空処理装置であって、前部に配置され大気圧下で前記試料を搬送する大気搬送室と、この大気搬送室の後方に配置され真空にされた内部を前記試料が搬送される真空搬送室と、この真空搬送室と前記大気搬送室との間でこれらを連結するロック室と、前記真空搬送室の周囲にこれと連結されて配置され前記真空容器を含む複数の真空処理ユニットと、前記真空搬送室又はロック室の下方の空間に配置されこの空間の周囲に配置された前記真空処理ユニットの各々に供給される前記試料の処理用の複数種類のガスの流量を調節する複数の流量調節器とを備えている。
【選択図】図1
Description
さらに、処理ユニット103a〜cの各々は、真空処理装置100本体に装着された状態で、上記搬送室112の中心について同一の形状またはこれに装着される機器が同一の配置のユニットとなっている。各処理ユニット103a〜cは真空容器とこの内部の処理室内に配置されたウエハが載せられる試料台とを有し、その中心が搬送室112内に配置され図示しない下方の駆動装置により駆動されて回転し伸縮してウエハを搬送するロボットの回転の中心(図上の破線交点)を通る上下(床面に垂直な)方向を通る軸について等距離となるように配置されている。アッシング用の処理ユニット104も、真空容器、処理室、試料台を同様に備えて配置されている。
101 大気側ブロック
102 真空側ブロック
103a〜c 処理ユニット
104 処理ユニット
105 搬送ユニット
106a〜c ベッド
106a’〜c’ チャンバ部
107 ベッド
108 筐体
109 カセット台
110 真空搬送容器
113 ロック室
113’ ロック室
201 接続インタフェース
202 蓋
203 フレーム
204a〜c 排気装置
205 柱状の支持部材
206 空間
207 大気搬送ロボット
208 制御装置
301 エッチング処理室
302 エッチング処理室
303 エッチング処理室
304 MFCユニット
305 MFCユニット
306 MFCユニット
307 ガス分配器
309 処理室用ガス供給配管
310 処理室用ガス供給配管
311 処理室用ガス供給配管
401 ガス供給用配管
402 板部材
501 ガス供給管
502 ガス供給管
503 ガス排出管
507 ガス分配器
Claims (5)
- 真空容器内の処理室内に配置した試料をこの処理室内に形成したプラズマを用いて処理する真空処理装置であって、前部に配置され大気圧下で前記試料を搬送する大気搬送室と、この大気搬送室の後方に配置され真空にされた内部を前記試料が搬送される真空搬送室と、この真空搬送室と前記大気搬送室との間でこれらを連結するロック室と、前記真空搬送室の周囲にこれと連結されて配置され前記真空容器を含む複数の真空処理ユニットと、前記真空搬送室又はロック室の下方の空間に配置されこの空間の周囲に配置された前記真空処理ユニットの各々に供給される前記試料の処理用の複数種類のガスの流量を調節する複数の流量調節器とを備えた真空処理装置。
- 請求項1に記載の真空処理装置であって、前記真空搬送室が多角形の平面形を有した容器内に配置されて前記容器の多角形の辺を構成する側壁に前記真空処理ユニットが着脱可能に連結された真空処理装置。
- 請求項1または2に記載の真空処理装置であって、前記大気搬送室の後方の前記真空処理ユニットと前記大気搬送室との間に配置され前記真空処理装置が設置される床面の下方から供給される複数のガス用の配管と連結されて前記複数の流量調節器の各々に前記複数のガスを分配する分配器を備えた真空処理装置。
- 請求項1乃至3の何れかに記載の真空処理装置であって、複数の前記真空処理ユニット内の処理室の中心が前記真空搬送室の上下方向の中心軸の周りにこの真空搬送室の周方向に配置され、複数の前記流量調節器が対応する前記真空処理ユニットの周方向の配置位置の順に前記真空搬送室の下方で上下方向の軸の周りに周方向に配置された真空処理装置。
- 請求項1乃至4の何れかに記載の真空処理装置であって、前記複数の流量調節器の上面が同じ高さの平面で構成され、前記真空搬送室と前記複数の流量調節器との間に作業者が作業できる空間が配置された真空処理装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008041668A JP5260981B2 (ja) | 2008-02-22 | 2008-02-22 | 真空処理装置 |
KR1020080018874A KR100993914B1 (ko) | 2008-02-22 | 2008-02-29 | 진공처리장치 |
US12/041,029 US20090214399A1 (en) | 2008-02-22 | 2008-03-03 | Vacuum processing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008041668A JP5260981B2 (ja) | 2008-02-22 | 2008-02-22 | 真空処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009200328A true JP2009200328A (ja) | 2009-09-03 |
JP5260981B2 JP5260981B2 (ja) | 2013-08-14 |
Family
ID=40998499
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008041668A Active JP5260981B2 (ja) | 2008-02-22 | 2008-02-22 | 真空処理装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20090214399A1 (ja) |
JP (1) | JP5260981B2 (ja) |
KR (1) | KR100993914B1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6463220B2 (ja) * | 2015-05-21 | 2019-01-30 | 東京エレクトロン株式会社 | 処理システム |
DE102018106751A1 (de) * | 2017-07-31 | 2019-01-31 | Taiwan Semiconductor Manufacturing Co. Ltd. | Automatisiertes inspektionswerkzeug |
US20230274958A1 (en) * | 2022-02-28 | 2023-08-31 | Syskey Technology Co., Ltd. | Multi-chamber semiconductor manufacturing system |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10163185A (ja) * | 1996-11-18 | 1998-06-19 | Applied Materials Inc | 遠隔プラズマ源 |
JP2000269149A (ja) * | 1999-03-19 | 2000-09-29 | Rohm Co Ltd | 半導体基板に対するプラズマ表面処理装置 |
JP2001237297A (ja) * | 1999-11-30 | 2001-08-31 | Applied Materials Inc | 統合モジュール式処理プラットフォーム |
JP2005101598A (ja) * | 2003-09-04 | 2005-04-14 | Hitachi High-Technologies Corp | 真空処理装置 |
JP2005252200A (ja) * | 2004-03-08 | 2005-09-15 | Hitachi High-Technologies Corp | 真空処理装置 |
JP2006080365A (ja) * | 2004-09-10 | 2006-03-23 | Hitachi High-Technologies Corp | 真空処理装置 |
JP2006080364A (ja) * | 2004-09-10 | 2006-03-23 | Hitachi High-Technologies Corp | 真空処理装置 |
JP2006080347A (ja) * | 2004-09-10 | 2006-03-23 | Hitachi High-Technologies Corp | プラズマ処理装置 |
JP2008205183A (ja) * | 2007-02-20 | 2008-09-04 | Hitachi High-Technologies Corp | 真空処理装置 |
JP2008251969A (ja) * | 2007-03-30 | 2008-10-16 | Hitachi High-Technologies Corp | プラズマ処理装置 |
JP2008251764A (ja) * | 2007-03-30 | 2008-10-16 | Hitachi High-Technologies Corp | プラズマ処理装置 |
JP2009158733A (ja) * | 2007-12-27 | 2009-07-16 | Hitachi High-Technologies Corp | 真空処理装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5605179A (en) * | 1995-03-17 | 1997-02-25 | Insync Systems, Inc. | Integrated gas panel |
FR2755149B1 (fr) * | 1996-10-30 | 1999-01-15 | Pasteur Institut | Procede de diagnostic de maladies genetiques par peignage moleculaire et coffret de diagnostic |
US20020123063A1 (en) * | 1997-03-14 | 2002-09-05 | Gjerde Douglas T. | Band array display of polynucleotide separations |
US6312525B1 (en) * | 1997-07-11 | 2001-11-06 | Applied Materials, Inc. | Modular architecture for semiconductor wafer fabrication equipment |
US7670770B2 (en) * | 2001-07-25 | 2010-03-02 | The Trustees Of Princeton University | Nanochannel arrays and their preparation and use for high throughput macromolecular analysis |
-
2008
- 2008-02-22 JP JP2008041668A patent/JP5260981B2/ja active Active
- 2008-02-29 KR KR1020080018874A patent/KR100993914B1/ko active IP Right Grant
- 2008-03-03 US US12/041,029 patent/US20090214399A1/en not_active Abandoned
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10163185A (ja) * | 1996-11-18 | 1998-06-19 | Applied Materials Inc | 遠隔プラズマ源 |
JP2000269149A (ja) * | 1999-03-19 | 2000-09-29 | Rohm Co Ltd | 半導体基板に対するプラズマ表面処理装置 |
JP2001237297A (ja) * | 1999-11-30 | 2001-08-31 | Applied Materials Inc | 統合モジュール式処理プラットフォーム |
JP2005101598A (ja) * | 2003-09-04 | 2005-04-14 | Hitachi High-Technologies Corp | 真空処理装置 |
JP2005252200A (ja) * | 2004-03-08 | 2005-09-15 | Hitachi High-Technologies Corp | 真空処理装置 |
JP2006080365A (ja) * | 2004-09-10 | 2006-03-23 | Hitachi High-Technologies Corp | 真空処理装置 |
JP2006080364A (ja) * | 2004-09-10 | 2006-03-23 | Hitachi High-Technologies Corp | 真空処理装置 |
JP2006080347A (ja) * | 2004-09-10 | 2006-03-23 | Hitachi High-Technologies Corp | プラズマ処理装置 |
JP2008205183A (ja) * | 2007-02-20 | 2008-09-04 | Hitachi High-Technologies Corp | 真空処理装置 |
JP2008251969A (ja) * | 2007-03-30 | 2008-10-16 | Hitachi High-Technologies Corp | プラズマ処理装置 |
JP2008251764A (ja) * | 2007-03-30 | 2008-10-16 | Hitachi High-Technologies Corp | プラズマ処理装置 |
JP2009158733A (ja) * | 2007-12-27 | 2009-07-16 | Hitachi High-Technologies Corp | 真空処理装置 |
Also Published As
Publication number | Publication date |
---|---|
US20090214399A1 (en) | 2009-08-27 |
KR100993914B1 (ko) | 2010-11-11 |
JP5260981B2 (ja) | 2013-08-14 |
KR20090090965A (ko) | 2009-08-26 |
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