JP2009196867A5 - - Google Patents
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- Publication number
- JP2009196867A5 JP2009196867A5 JP2008042277A JP2008042277A JP2009196867A5 JP 2009196867 A5 JP2009196867 A5 JP 2009196867A5 JP 2008042277 A JP2008042277 A JP 2008042277A JP 2008042277 A JP2008042277 A JP 2008042277A JP 2009196867 A5 JP2009196867 A5 JP 2009196867A5
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- thin film
- substrate
- zno
- znmgo
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010409 thin film Substances 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 34
- 239000000758 substrate Substances 0.000 description 18
- 229910003363 ZnMgO Inorganic materials 0.000 description 12
- 239000010408 film Substances 0.000 description 12
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000005755 formation reaction Methods 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 210000002381 Plasma Anatomy 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001493 electron microscopy Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 125000004433 nitrogen atoms Chemical group N* 0.000 description 1
- 230000003287 optical Effects 0.000 description 1
- 125000004430 oxygen atoms Chemical group O* 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008042277A JP5019326B2 (ja) | 2008-02-23 | 2008-02-23 | ＭｇａＺｎ１−ａＯ単結晶薄膜の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008042277A JP5019326B2 (ja) | 2008-02-23 | 2008-02-23 | ＭｇａＺｎ１−ａＯ単結晶薄膜の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009196867A JP2009196867A (ja) | 2009-09-03 |
| JP2009196867A5 true JP2009196867A5 (zh) | 2011-03-17 |
| JP5019326B2 JP5019326B2 (ja) | 2012-09-05 |
Family
ID=41140814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008042277A Expired - Fee Related JP5019326B2 (ja) | 2008-02-23 | 2008-02-23 | ＭｇａＺｎ１−ａＯ単結晶薄膜の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5019326B2 (zh) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101213133B1 (ko) * | 2010-02-19 | 2012-12-18 | 전남대학교산학협력단 | ＺｎＯ에 격자 정합된 자외선용 단결정 ＺｎＭｇＡｌＯ 박막 및 그 제조방법 |
| KR20140128157A (ko) * | 2013-04-26 | 2014-11-05 | 오씨아이 주식회사 | 플라즈마에 의한 단결정 성장 방법 |
| PL238652B1 (pl) * | 2017-11-28 | 2021-09-20 | Inst Fizyki Polskiej Akademii Nauk | Sposób wytwarzania struktur z trójskładnikowymi warstwami Zn₁-ₓMgₓO |
| CN109301036A (zh) * | 2018-11-14 | 2019-02-01 | 长春理工大学 | 一种基于激光烧结法的均匀MgZnO薄膜制备技术 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4540201B2 (ja) * | 2000-09-13 | 2010-09-08 | 独立行政法人産業技術総合研究所 | ＺｎＯ系酸化物半導体層を有する半導体装置の製法 |
| JP2004207441A (ja) * | 2002-12-25 | 2004-07-22 | Sharp Corp | 酸化物半導体発光素子 |
| JP2004304166A (ja) * | 2003-03-14 | 2004-10-28 | Rohm Co Ltd | ＺｎＯ系半導体素子 |
| JP3945782B2 (ja) * | 2005-09-06 | 2007-07-18 | シチズン東北株式会社 | 半導体発光素子及びその製造方法 |
| JP5122738B2 (ja) * | 2005-11-01 | 2013-01-16 | スタンレー電気株式会社 | ＺｎＯ結晶またはＺｎＯ系半導体化合物結晶の製造方法、及びＺｎＯ系発光素子の製造方法 |
| JP4939844B2 (ja) * | 2006-06-08 | 2012-05-30 | ローム株式会社 | ＺｎＯ系半導体素子 |
-
2008
- 2008-02-23 JP JP2008042277A patent/JP5019326B2/ja not_active Expired - Fee Related
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